KR100653715B1 - 적어도 하나의 개구부를 갖는 최상부 금속층을 구비하는반도체 소자들 및 그 제조방법들 - Google Patents

적어도 하나의 개구부를 갖는 최상부 금속층을 구비하는반도체 소자들 및 그 제조방법들 Download PDF

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KR100653715B1
KR100653715B1 KR1020050052654A KR20050052654A KR100653715B1 KR 100653715 B1 KR100653715 B1 KR 100653715B1 KR 1020050052654 A KR1020050052654 A KR 1020050052654A KR 20050052654 A KR20050052654 A KR 20050052654A KR 100653715 B1 KR100653715 B1 KR 100653715B1
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South Korea
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interlayer insulating
insulating film
layer
metal
cell array
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English (en)
Korean (ko)
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박주성
홍애란
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삼성전자주식회사
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Priority to KR1020050052654A priority Critical patent/KR100653715B1/ko
Priority to US11/395,047 priority patent/US7795731B2/en
Priority to JP2006166127A priority patent/JP2006352137A/ja
Application granted granted Critical
Publication of KR100653715B1 publication Critical patent/KR100653715B1/ko
Priority to US12/855,870 priority patent/US8501617B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020050052654A 2005-06-17 2005-06-17 적어도 하나의 개구부를 갖는 최상부 금속층을 구비하는반도체 소자들 및 그 제조방법들 Expired - Fee Related KR100653715B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050052654A KR100653715B1 (ko) 2005-06-17 2005-06-17 적어도 하나의 개구부를 갖는 최상부 금속층을 구비하는반도체 소자들 및 그 제조방법들
US11/395,047 US7795731B2 (en) 2005-06-17 2006-03-31 Semiconductor devices including a topmost metal layer with at least one opening and their methods of fabrication
JP2006166127A JP2006352137A (ja) 2005-06-17 2006-06-15 少なくとも１つの開口部を有する最上部金属層を備える半導体素子及びその製造方法
US12/855,870 US8501617B2 (en) 2005-06-17 2010-08-13 Semiconductor devices including a topmost metal layer with at least one opening and their methods of fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050052654A KR100653715B1 (ko) 2005-06-17 2005-06-17 적어도 하나의 개구부를 갖는 최상부 금속층을 구비하는반도체 소자들 및 그 제조방법들

Publications (1)

Publication Number Publication Date
KR100653715B1 true KR100653715B1 (ko) 2006-12-05

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KR1020050052654A Expired - Fee Related KR100653715B1 (ko) 2005-06-17 2005-06-17 적어도 하나의 개구부를 갖는 최상부 금속층을 구비하는반도체 소자들 및 그 제조방법들

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US (2) US7795731B2 (enExample)
JP (1) JP2006352137A (enExample)
KR (1) KR100653715B1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008108761A (ja) * 2006-10-23 2008-05-08 Elpida Memory Inc ダイナミックランダムアクセスメモリの製造方法
KR101356425B1 (ko) * 2007-09-20 2014-01-28 삼성전자주식회사 모스 트랜지스터의 열화도 추정 방법 및 회로 특성 열화도추정 방법
KR101412144B1 (ko) * 2007-11-26 2014-06-26 삼성전자 주식회사 금속 배선의 제조 방법 및 이를 이용한 이미지 센서의 제조방법
KR20120118323A (ko) * 2011-04-18 2012-10-26 삼성전자주식회사 반도체 소자 및 그 제조방법
US10056363B2 (en) * 2015-11-10 2018-08-21 Marvell World Trade Ltd. Methods and systems to improve yield in multiple chips integration processes
KR102899930B1 (ko) 2021-07-28 2025-12-15 삼성전자주식회사 반도체 소자

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0945869A (ja) * 1995-05-25 1997-02-14 Hitachi Ltd 半導体集積回路装置及びその製造方法
KR19980071111A (ko) * 1997-02-06 1998-10-26 가네꼬히사시 배선을 형성한 후에 수소 이온으로 문턱 전압을변경시키는 것이 가능한 전계 효과 트랜지스터를 구비한반도체 장치 제조 방법
KR100355118B1 (ko) 1993-02-19 2002-10-11 가부시키가이샤 히타치초에루.에스.아이.시스테무즈 반도체 집적회로장치 및 그 제조방법
KR20050001098A (ko) * 2003-06-27 2005-01-06 주식회사 하이닉스반도체 반도체 소자의 보호막 제조 방법

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JPS5745259A (en) * 1980-09-01 1982-03-15 Hitachi Ltd Resin sealing type semiconductor device
US5229642A (en) 1980-09-01 1993-07-20 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
US5371411A (en) * 1980-09-01 1994-12-06 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
US5552639A (en) * 1980-09-01 1996-09-03 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
JPH0817820A (ja) 1994-06-28 1996-01-19 Hitachi Ltd 半導体集積回路装置
JP3638778B2 (ja) * 1997-03-31 2005-04-13 株式会社ルネサステクノロジ 半導体集積回路装置およびその製造方法
JP3144367B2 (ja) * 1997-12-19 2001-03-12 日本電気株式会社 Ｃｏｂ型ｄｒａｍ半導体装置及びその製造方法
JP4322347B2 (ja) * 1999-03-15 2009-08-26 エルピーダメモリ株式会社 半導体装置およびその製造方法
JP2001308181A (ja) * 2000-04-27 2001-11-02 Nec Corp 半導体装置とその製造方法
JP4439082B2 (ja) * 2000-06-05 2010-03-24 株式会社ルネサステクノロジ 半導体記憶装置
KR100410990B1 (ko) 2001-02-20 2003-12-18 삼성전자주식회사 다층배선을 갖는 반도체 장치 및 그의 제조방법
JP4260405B2 (ja) * 2002-02-08 2009-04-30 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2004153037A (ja) * 2002-10-31 2004-05-27 Renesas Technology Corp 半導体装置の製造方法
JP2004311787A (ja) 2003-04-08 2004-11-04 Sharp Corp 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100355118B1 (ko) 1993-02-19 2002-10-11 가부시키가이샤 히타치초에루.에스.아이.시스테무즈 반도체 집적회로장치 및 그 제조방법
JPH0945869A (ja) * 1995-05-25 1997-02-14 Hitachi Ltd 半導体集積回路装置及びその製造方法
KR19980071111A (ko) * 1997-02-06 1998-10-26 가네꼬히사시 배선을 형성한 후에 수소 이온으로 문턱 전압을변경시키는 것이 가능한 전계 효과 트랜지스터를 구비한반도체 장치 제조 방법
KR20050001098A (ko) * 2003-06-27 2005-01-06 주식회사 하이닉스반도체 반도체 소자의 보호막 제조 방법

Also Published As

Publication number Publication date
US8501617B2 (en) 2013-08-06
US20060284226A1 (en) 2006-12-21
JP2006352137A (ja) 2006-12-28
US20100304537A1 (en) 2010-12-02
US7795731B2 (en) 2010-09-14

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