JP2006352137A - 少なくとも１つの開口部を有する最上部金属層を備える半導体素子及びその製造方法 - Google Patents

少なくとも１つの開口部を有する最上部金属層を備える半導体素子及びその製造方法 Download PDF

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Publication number
JP2006352137A
JP2006352137A JP2006166127A JP2006166127A JP2006352137A JP 2006352137 A JP2006352137 A JP 2006352137A JP 2006166127 A JP2006166127 A JP 2006166127A JP 2006166127 A JP2006166127 A JP 2006166127A JP 2006352137 A JP2006352137 A JP 2006352137A
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JP
Japan
Prior art keywords
insulating film
interlayer insulating
semiconductor device
lower metal
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006166127A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006352137A5 (enExample
Inventor
Chusei Park
柱成 朴
Ae-Ran Hong
愛蘭 洪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2006352137A publication Critical patent/JP2006352137A/ja
Publication of JP2006352137A5 publication Critical patent/JP2006352137A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2006166127A 2005-06-17 2006-06-15 少なくとも１つの開口部を有する最上部金属層を備える半導体素子及びその製造方法 Pending JP2006352137A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050052654A KR100653715B1 (ko) 2005-06-17 2005-06-17 적어도 하나의 개구부를 갖는 최상부 금속층을 구비하는반도체 소자들 및 그 제조방법들

Publications (2)

Publication Number Publication Date
JP2006352137A true JP2006352137A (ja) 2006-12-28
JP2006352137A5 JP2006352137A5 (enExample) 2009-07-30

Family

ID=37572551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006166127A Pending JP2006352137A (ja) 2005-06-17 2006-06-15 少なくとも１つの開口部を有する最上部金属層を備える半導体素子及びその製造方法

Country Status (3)

Country Link
US (2) US7795731B2 (enExample)
JP (1) JP2006352137A (enExample)
KR (1) KR100653715B1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008108761A (ja) * 2006-10-23 2008-05-08 Elpida Memory Inc ダイナミックランダムアクセスメモリの製造方法
KR101356425B1 (ko) * 2007-09-20 2014-01-28 삼성전자주식회사 모스 트랜지스터의 열화도 추정 방법 및 회로 특성 열화도추정 방법
KR101412144B1 (ko) * 2007-11-26 2014-06-26 삼성전자 주식회사 금속 배선의 제조 방법 및 이를 이용한 이미지 센서의 제조방법
KR20120118323A (ko) * 2011-04-18 2012-10-26 삼성전자주식회사 반도체 소자 및 그 제조방법
US10056363B2 (en) * 2015-11-10 2018-08-21 Marvell World Trade Ltd. Methods and systems to improve yield in multiple chips integration processes
KR102899930B1 (ko) 2021-07-28 2025-12-15 삼성전자주식회사 반도체 소자

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745259A (en) * 1980-09-01 1982-03-15 Hitachi Ltd Resin sealing type semiconductor device
JPH11186512A (ja) * 1997-12-19 1999-07-09 Nec Corp Ｃｏｂ型ｄｒａｍ半導体装置
JP2000269455A (ja) * 1999-03-15 2000-09-29 Hitachi Ltd 半導体装置およびその製造方法
JP2001308181A (ja) * 2000-04-27 2001-11-02 Nec Corp 半導体装置とその製造方法
JP2001344965A (ja) * 2000-06-05 2001-12-14 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229642A (en) 1980-09-01 1993-07-20 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
US5371411A (en) * 1980-09-01 1994-12-06 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
US5552639A (en) * 1980-09-01 1996-09-03 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
US5508540A (en) 1993-02-19 1996-04-16 Hitachi, Ltd. Semiconductor integrated circuit device and process of manufacturing the same
JPH0817820A (ja) 1994-06-28 1996-01-19 Hitachi Ltd 半導体集積回路装置
JP3631549B2 (ja) * 1995-05-25 2005-03-23 株式会社ルネサステクノロジ 半導体集積回路装置
JP2967745B2 (ja) * 1997-02-06 1999-10-25 日本電気株式会社 半導体装置の製造方法
JP3638778B2 (ja) * 1997-03-31 2005-04-13 株式会社ルネサステクノロジ 半導体集積回路装置およびその製造方法
KR100410990B1 (ko) 2001-02-20 2003-12-18 삼성전자주식회사 다층배선을 갖는 반도체 장치 및 그의 제조방법
JP4260405B2 (ja) * 2002-02-08 2009-04-30 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2004153037A (ja) * 2002-10-31 2004-05-27 Renesas Technology Corp 半導体装置の製造方法
JP2004311787A (ja) 2003-04-08 2004-11-04 Sharp Corp 半導体装置
KR20050001098A (ko) * 2003-06-27 2005-01-06 주식회사 하이닉스반도체 반도체 소자의 보호막 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745259A (en) * 1980-09-01 1982-03-15 Hitachi Ltd Resin sealing type semiconductor device
JPH11186512A (ja) * 1997-12-19 1999-07-09 Nec Corp Ｃｏｂ型ｄｒａｍ半導体装置
JP2000269455A (ja) * 1999-03-15 2000-09-29 Hitachi Ltd 半導体装置およびその製造方法
JP2001308181A (ja) * 2000-04-27 2001-11-02 Nec Corp 半導体装置とその製造方法
JP2001344965A (ja) * 2000-06-05 2001-12-14 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法

Also Published As

Publication number Publication date
US8501617B2 (en) 2013-08-06
US20060284226A1 (en) 2006-12-21
US20100304537A1 (en) 2010-12-02
KR100653715B1 (ko) 2006-12-05
US7795731B2 (en) 2010-09-14

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