JP2006191079A - リソグラフィ装置及びデバイス製造方法 - Google Patents

リソグラフィ装置及びデバイス製造方法 Download PDF

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Publication number
JP2006191079A
JP2006191079A JP2005376924A JP2005376924A JP2006191079A JP 2006191079 A JP2006191079 A JP 2006191079A JP 2005376924 A JP2005376924 A JP 2005376924A JP 2005376924 A JP2005376924 A JP 2005376924A JP 2006191079 A JP2006191079 A JP 2006191079A
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JP
Japan
Prior art keywords
projection system
substrate
optical element
lithographic apparatus
physical property
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Pending
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JP2005376924A
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English (en)
Japanese (ja)
Inventor
Johannes Jacobus Matheus Baselmans
ヤコブス マテウス バーゼルマンス ヨハネス
Sjoerd Nicolaas Lambertus Donders
ニコラース ランベルトゥス ドンダース シュールト
Alexander Hoogendam Christiaan
アレクサンダー ホーゲンダム クリスティアーン
Jeroen Johannes Sophia Maria Mertens
ヨハネス ソフィア マリア メルテンス ジェローン
Johannes Catharinus Hubertus Mulkens
キャサリヌス フーベルトゥス ムルケンス ヨハネス
Bob Streefkerk
シュトレーフケルク ボブ
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ASML Netherlands BV
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ASML Netherlands BV
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Publication of JP2006191079A publication Critical patent/JP2006191079A/ja
Pending legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023Aligning or positioning in direction perpendicular to substrate surface
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883Environment aspects, e.g. pressure of beam-path gas, temperature of optical system

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2005376924A 2004-12-30 2005-12-28 リソグラフィ装置及びデバイス製造方法 Pending JP2006191079A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/025,603 US20060147821A1 (en) 2004-12-30 2004-12-30 Lithographic apparatus and device manufacturing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008309635A Division JP4806703B2 (ja) 2004-12-30 2008-12-04 リソグラフィ装置及びデバイス製造方法

Publications (1)

Publication Number Publication Date
JP2006191079A true JP2006191079A (ja) 2006-07-20

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Family Applications (3)

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JP2005376924A Pending JP2006191079A (ja) 2004-12-30 2005-12-28 リソグラフィ装置及びデバイス製造方法
JP2008309635A Expired - Fee Related JP4806703B2 (ja) 2004-12-30 2008-12-04 リソグラフィ装置及びデバイス製造方法
JP2010198845A Expired - Fee Related JP5286338B2 (ja) 2004-12-30 2010-09-06 リソグラフィ装置及びデバイス製造方法

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JP2008309635A Expired - Fee Related JP4806703B2 (ja) 2004-12-30 2008-12-04 リソグラフィ装置及びデバイス製造方法
JP2010198845A Expired - Fee Related JP5286338B2 (ja) 2004-12-30 2010-09-06 リソグラフィ装置及びデバイス製造方法

Country Status (7)

Country Link
US (4) US20060147821A1 (enExample)
EP (2) EP1677156B1 (enExample)
JP (3) JP2006191079A (enExample)
KR (1) KR100742765B1 (enExample)
CN (1) CN1808279A (enExample)
SG (1) SG123752A1 (enExample)
TW (1) TWI342468B (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008131045A (ja) * 2006-11-22 2008-06-05 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法
JP2009054730A (ja) * 2007-08-24 2009-03-12 Nikon Corp 移動体駆動方法及び移動体駆動システム、パターン形成方法及び装置、露光及び装置、並びにデバイス製造方法
JP4888388B2 (ja) * 2005-03-31 2012-02-29 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
TWI421651B (zh) * 2009-03-19 2014-01-01 Asml Netherlands Bv 定位裝置及微影裝置
US8739082B2 (en) 2009-10-28 2014-05-27 Hua-yu Liu Method of pattern selection for source and mask optimization
TWI460561B (zh) * 2007-05-29 2014-11-11 尼康股份有限公司 Exposure method and apparatus, and component manufacturing method
TWI470341B (zh) * 2008-01-03 2015-01-21 Zeiss Carl Sms Ltd 光罩線寬大小分佈之映射方法及裝置
TWI475336B (zh) * 2007-07-24 2015-03-01 尼康股份有限公司 Mobile body driving method and moving body driving system, pattern forming method and apparatus, exposure method and apparatus, and component manufacturing method
KR20160089489A (ko) * 2013-12-05 2016-07-27 에이에스엠엘 네델란즈 비.브이. 기판 상의 구조체를 측정하는 방법 및 장치, 오차 보정을 위한 모델, 이러한 방법 및 장치를 구현하기 위한 컴퓨터 프로그램 제품
KR20170077214A (ko) * 2014-12-12 2017-07-05 에이에스엠엘 네델란즈 비.브이. 기판 모델 파라미터를 계산하고 리소그래피 처리를 제어하기 위한 방법 및 장치

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100593751B1 (ko) * 2004-11-16 2006-06-28 삼성전자주식회사 오토 포커스 시스템, 오토 포커스 방법 및 이를 이용한노광장치
US8045134B2 (en) * 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
SG143178A1 (en) * 2006-11-27 2008-06-27 Asml Netherlands Bv Lithographic apparatus, device manufacturing method and computer program product
US7999920B2 (en) 2007-08-22 2011-08-16 Asml Netherlands B.V. Method of performing model-based scanner tuning
ATE548679T1 (de) 2008-05-08 2012-03-15 Asml Netherlands Bv Lithografische immersionsvorrichtung, trocknungsvorrichtung, immersionsmetrologievorrichtung und verfahren zur herstellung einer vorrichtung
US8421993B2 (en) 2008-05-08 2013-04-16 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
US8820939B2 (en) 2008-06-17 2014-09-02 The Invention Science Fund I, Llc Projection associated methods and systems
US8733952B2 (en) 2008-06-17 2014-05-27 The Invention Science Fund I, Llc Methods and systems for coordinated use of two or more user responsive projectors
US8641203B2 (en) 2008-06-17 2014-02-04 The Invention Science Fund I, Llc Methods and systems for receiving and transmitting signals between server and projector apparatuses
US8723787B2 (en) 2008-06-17 2014-05-13 The Invention Science Fund I, Llc Methods and systems related to an image capture projection surface
US20090309826A1 (en) 2008-06-17 2009-12-17 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Systems and devices
US8936367B2 (en) 2008-06-17 2015-01-20 The Invention Science Fund I, Llc Systems and methods associated with projecting in response to conformation
US8608321B2 (en) 2008-06-17 2013-12-17 The Invention Science Fund I, Llc Systems and methods for projecting in response to conformation
EP2196857A3 (en) * 2008-12-09 2010-07-21 ASML Netherlands BV Lithographic apparatus and device manufacturing method
EP2228685B1 (en) * 2009-03-13 2018-06-27 ASML Netherlands B.V. Level sensor arrangement for lithographic apparatus and device manufacturing method
US8488107B2 (en) 2009-03-13 2013-07-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a level sensor having multiple projection units and detection units
US8675210B2 (en) 2009-03-13 2014-03-18 Asml Netherlands B.V. Level sensor, lithographic apparatus, and substrate surface positioning method
US20100231881A1 (en) * 2009-03-13 2010-09-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL2006131A (en) 2010-03-12 2011-09-13 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
CN103545174B (zh) * 2012-07-16 2016-08-24 无锡华润上华科技有限公司 光刻对焦参数测试方法及系统
US10333898B1 (en) 2018-07-09 2019-06-25 Centripetal Networks, Inc. Methods and systems for efficient network protection
JP7489829B2 (ja) * 2020-05-21 2024-05-24 キヤノン株式会社 処理装置、計測方法および物品製造方法

Family Cites Families (117)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE221563C (enExample)
DE224448C (enExample)
DE242880C (enExample)
DE206607C (enExample)
GB1242527A (en) * 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3573975A (en) * 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
DE2963537D1 (en) 1979-07-27 1982-10-07 Tabarelli Werner W Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
FR2474708B1 (fr) 1980-01-24 1987-02-20 Dme Procede de microphotolithographie a haute resolution de traits
JPS5754317A (en) * 1980-09-19 1982-03-31 Hitachi Ltd Method and device for forming pattern
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4390273A (en) * 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
DD206607A1 (de) 1982-06-16 1984-02-01 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur beseitigung von interferenzeffekten
DD242880A1 (de) 1983-01-31 1987-02-11 Kuch Karl Heinz Einrichtung zur fotolithografischen strukturuebertragung
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS62121417A (ja) 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPS6412515A (en) 1987-07-07 1989-01-17 Matsushita Electric Industrial Co Ltd Aluminum electrolytic capacitor
US5040020A (en) * 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
JPH0828319B2 (ja) 1989-04-21 1996-03-21 株式会社日立製作所 投影露光装置
JPH03209479A (ja) 1989-09-06 1991-09-12 Sanee Giken Kk 露光方法
NL9000503A (nl) 1990-03-05 1991-10-01 Asm Lithography Bv Apparaat en werkwijze voor het afbeelden van een maskerpatroon op een substraat.
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP2520833B2 (ja) 1992-12-21 1996-07-31 東京エレクトロン株式会社 浸漬式の液処理装置
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
JPH08219718A (ja) 1995-02-08 1996-08-30 Nikon Corp 面位置検出装置
JP3689949B2 (ja) * 1995-12-19 2005-08-31 株式会社ニコン 投影露光装置、及び該投影露光装置を用いたパターン形成方法
JPH1012515A (ja) * 1996-06-20 1998-01-16 Nikon Corp 投影露光装置
US6104687A (en) * 1996-08-26 2000-08-15 Digital Papyrus Corporation Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP3612920B2 (ja) 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
JPH10255319A (ja) 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US6330052B1 (en) * 1997-06-13 2001-12-11 Canon Kabushiki Kaisha Exposure apparatus and its control method, stage apparatus, and device manufacturing method
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
JPH11135420A (ja) 1997-10-30 1999-05-21 Nikon Corp 投影露光装置
WO1999027568A1 (en) 1997-11-21 1999-06-03 Nikon Corporation Projection aligner and projection exposure method
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
EP1039511A4 (en) 1997-12-12 2005-03-02 Nikon Corp PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
TWI242111B (en) * 1999-04-19 2005-10-21 Asml Netherlands Bv Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
JP4504479B2 (ja) 1999-09-21 2010-07-14 オリンパス株式会社 顕微鏡用液浸対物レンズ
TW591653B (en) * 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
WO2002091078A1 (en) * 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
AU2002322891A1 (en) * 2001-08-14 2003-03-03 Redline Communications Inc. An adaptive pre-distortion method and apparatus for digital rf transmitters
US6600547B2 (en) * 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
WO2003040830A2 (en) * 2001-11-07 2003-05-15 Applied Materials, Inc. Optical spot grid array printer
DE10229818A1 (de) * 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
EP1420300B1 (en) * 2002-11-12 2015-07-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
KR100588124B1 (ko) * 2002-11-12 2006-06-09 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스제조방법
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101424881B (zh) * 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
SG121818A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1420302A1 (en) * 2002-11-18 2004-05-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN100429748C (zh) * 2002-12-10 2008-10-29 株式会社尼康 曝光装置和器件制造方法
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
EP1571697A4 (en) 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD
KR101036114B1 (ko) 2002-12-10 2011-05-23 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
WO2004053951A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光方法及び露光装置並びにデバイス製造方法
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
US7242455B2 (en) * 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
JP3997199B2 (ja) 2002-12-10 2007-10-24 キヤノン株式会社 露光方法及び装置
KR20050085026A (ko) 2002-12-10 2005-08-29 가부시키가이샤 니콘 광학 소자 및 그 광학 소자를 사용한 투영 노광 장치
JP2004301825A (ja) 2002-12-10 2004-10-28 Nikon Corp 面位置検出装置、露光方法、及びデバイス製造方法
SG158745A1 (en) 2002-12-10 2010-02-26 Nikon Corp Exposure apparatus and method for producing device
JP4232449B2 (ja) 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
WO2004053957A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 面位置検出装置、露光方法、及びデバイス製造方法
WO2004053952A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
EP1571701A4 (en) 2002-12-10 2008-04-09 Nikon Corp EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
DE60326384D1 (de) 2002-12-13 2009-04-09 Koninkl Philips Electronics Nv Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
ATE335272T1 (de) 2002-12-19 2006-08-15 Koninkl Philips Electronics Nv Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
AU2003295177A1 (en) 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
JP3915789B2 (ja) 2003-03-13 2007-05-16 セイコーエプソン株式会社 カラーフィルタ基板の製造方法
KR20070104476A (ko) 2003-03-20 2007-10-25 스미토모 덴키 고교 가부시키가이샤 파장 변환기
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
CN101061429B (zh) 2003-04-10 2015-02-04 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
EP1477856A1 (en) 2003-05-13 2004-11-17 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7274472B2 (en) * 2003-05-28 2007-09-25 Timbre Technologies, Inc. Resolution enhanced optical metrology
DE10324477A1 (de) 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
EP1486827B1 (en) * 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005019616A (ja) * 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
JP4343597B2 (ja) * 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101209540B1 (ko) * 2003-07-09 2012-12-07 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP1643543B1 (en) * 2003-07-09 2010-11-24 Nikon Corporation Exposure apparatus and method for manufacturing device
SG109000A1 (en) * 2003-07-16 2005-02-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7070915B2 (en) * 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
JP4378136B2 (ja) * 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
JP3870182B2 (ja) * 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005159322A (ja) * 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
JP2005175016A (ja) * 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
JP2005175034A (ja) * 2003-12-09 2005-06-30 Canon Inc 露光装置
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
JP2005191393A (ja) * 2003-12-26 2005-07-14 Canon Inc 露光方法及び装置
JP2005191381A (ja) * 2003-12-26 2005-07-14 Canon Inc 露光方法及び装置
JP4429023B2 (ja) * 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
JP4018647B2 (ja) * 2004-02-09 2007-12-05 キヤノン株式会社 投影露光装置およびデバイス製造方法
JP2005286068A (ja) * 2004-03-29 2005-10-13 Canon Inc 露光装置及び方法
JP4510494B2 (ja) * 2004-03-29 2010-07-21 キヤノン株式会社 露光装置
US7271917B2 (en) * 2005-05-03 2007-09-18 Asml Netherlands B.V. Lithographic apparatus, position quantity detection system and method

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JP4888388B2 (ja) * 2005-03-31 2012-02-29 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
US9330912B2 (en) 2006-11-22 2016-05-03 Asml Netherlands B.V. Lithographic apparatus, fluid combining unit and device manufacturing method
US8045135B2 (en) 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
JP2008131045A (ja) * 2006-11-22 2008-06-05 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法
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US9183324B2 (en) 2009-10-28 2015-11-10 Asml Netherlands B.V. Pattern selection for full-chip source and mask optimization
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US8354209B2 (en) 2013-01-15
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