JP2006173557A - 中空型半導体装置とその製造方法 - Google Patents

中空型半導体装置とその製造方法 Download PDF

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Publication number
JP2006173557A
JP2006173557A JP2005149504A JP2005149504A JP2006173557A JP 2006173557 A JP2006173557 A JP 2006173557A JP 2005149504 A JP2005149504 A JP 2005149504A JP 2005149504 A JP2005149504 A JP 2005149504A JP 2006173557 A JP2006173557 A JP 2006173557A
Authority
JP
Japan
Prior art keywords
cap
substrate
semiconductor substrate
hollow
sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2005149504A
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English (en)
Japanese (ja)
Inventor
Takao Sato
隆夫 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2005149504A priority Critical patent/JP2006173557A/ja
Priority to TW094138994A priority patent/TW200620575A/zh
Priority to US11/281,517 priority patent/US7476567B2/en
Publication of JP2006173557A publication Critical patent/JP2006173557A/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0504—Holders or supports for bulk acoustic wave devices
    • H03H9/0514—Holders or supports for bulk acoustic wave devices consisting of mounting pads or bumps
    • H03H9/0523—Holders or supports for bulk acoustic wave devices consisting of mounting pads or bumps for flip-chip mounting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/105—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Measuring Fluid Pressure (AREA)
JP2005149504A 2004-11-22 2005-05-23 中空型半導体装置とその製造方法 Abandoned JP2006173557A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005149504A JP2006173557A (ja) 2004-11-22 2005-05-23 中空型半導体装置とその製造方法
TW094138994A TW200620575A (en) 2004-11-22 2005-11-07 Hollow type semiconductor apparatus and its manufacture
US11/281,517 US7476567B2 (en) 2004-11-22 2005-11-18 Midair semiconductor device and manufacturing method of the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004337775 2004-11-22
JP2005149504A JP2006173557A (ja) 2004-11-22 2005-05-23 中空型半導体装置とその製造方法

Publications (1)

Publication Number Publication Date
JP2006173557A true JP2006173557A (ja) 2006-06-29

Family

ID=36594640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005149504A Abandoned JP2006173557A (ja) 2004-11-22 2005-05-23 中空型半導体装置とその製造方法

Country Status (3)

Country Link
US (1) US7476567B2 (enExample)
JP (1) JP2006173557A (enExample)
TW (1) TW200620575A (enExample)

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JP2007281042A (ja) * 2006-04-04 2007-10-25 Matsushita Electric Ind Co Ltd 気密パッケ−ジおよび気密パッケージの製造方法
WO2008023478A1 (fr) * 2006-08-25 2008-02-28 Murata Manufacturing Co., Ltd. pièce électronique, et procédé de fabrication de la pièce électronique
JP2008051685A (ja) * 2006-08-25 2008-03-06 Dainippon Printing Co Ltd センサーユニットおよびその製造方法
JP2008118480A (ja) * 2006-11-06 2008-05-22 Fujitsu Media Device Kk 圧電薄膜デバイスおよびその製造方法
JP2008124638A (ja) * 2006-11-09 2008-05-29 Ube Ind Ltd 薄膜圧電デバイス及びその製造方法
WO2008120511A1 (ja) * 2007-03-29 2008-10-09 Murata Manufacturing Co., Ltd. 液中物質検出センサー
JP2009022003A (ja) * 2007-07-11 2009-01-29 Samsung Electro-Mechanics Co Ltd 水晶振動子の製造方法
JP2009177736A (ja) * 2008-01-28 2009-08-06 Murata Mfg Co Ltd 電子部品の製造方法
JP2009238781A (ja) * 2008-03-25 2009-10-15 Fujikura Ltd 半導体パッケージの製造方法
JP2010057146A (ja) * 2008-08-29 2010-03-11 Kyocera Corp 共振器、フィルタおよびデュプレクサ、ならびに共振器の製造方法
JP2011512260A (ja) * 2008-01-23 2011-04-21 エプコス アクチエンゲゼルシャフト Ｍｅｍｓ部品、ｍｅｍｓ部品の製造方法、及びｍｅｍｓ部品の取り扱い方法
JP2012069954A (ja) * 2011-10-05 2012-04-05 Mitsubishi Electric Corp 基板間接続構造およびパッケージ
JP5447379B2 (ja) * 2008-08-05 2014-03-19 株式会社大真空 圧電振動デバイスの封止部材、及びその製造方法
JP2017139734A (ja) * 2016-02-04 2017-08-10 サムソン エレクトロ−メカニックス カンパニーリミテッド． 音響波フィルター装置、音響波フィルター装置製造用パッケージ、及び音響波フィルター装置の製造方法
WO2020138278A1 (ja) * 2018-12-26 2020-07-02 京セラ株式会社 電子部品の接合方法および接合構造体
WO2020203044A1 (ja) * 2019-03-29 2020-10-08 株式会社村田製作所 振動子及び振動子の製造方法
JP2021535641A (ja) * 2019-07-19 2021-12-16 中芯集成電路(寧波)有限公司上海分公司Ningbo Semiconductor International Corporation(Shanghai Branch) バルク音響波共振器のパッケージング方法及びパッケージング構造
JP2022507090A (ja) * 2018-12-26 2022-01-18 中芯集成電路（寧波）有限公司上海分公司 制御回路とバルク弾性波フィルタの集積方法及び集積構造
JP2022525465A (ja) * 2019-04-05 2022-05-16 レゾナント インコーポレイテッド 横方向に励起されたフィルムバルク音響共振器パッケージ及び方法
JP7231118B1 (ja) * 2022-04-11 2023-03-01 三菱電機株式会社 中空パッケージ
US11811391B2 (en) 2020-05-04 2023-11-07 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with etched conductor patterns
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US11870423B2 (en) 2018-06-15 2024-01-09 Murata Manufacturing Co., Ltd. Wide bandwidth temperature-compensated transversely-excited film bulk acoustic resonator
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US11888463B2 (en) 2018-06-15 2024-01-30 Murata Manufacturing Co., Ltd. Multi-port filter using transversely-excited film bulk acoustic resonators
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US11901874B2 (en) 2018-06-15 2024-02-13 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with half-lambda dielectric layer
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US11916539B2 (en) 2020-02-28 2024-02-27 Murata Manufacturing Co., Ltd. Split-ladder band N77 filter using transversely-excited film bulk acoustic resonators
US11916540B2 (en) 2018-06-15 2024-02-27 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with periodic etched holes
US11929731B2 (en) 2018-02-18 2024-03-12 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode mark, and pitch
US11936361B2 (en) 2018-06-15 2024-03-19 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators
US11949402B2 (en) 2020-08-31 2024-04-02 Murata Manufacturing Co., Ltd. Resonators with different membrane thicknesses on the same die
US11949399B2 (en) 2018-06-15 2024-04-02 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in Bragg reflector stack
US11949403B2 (en) 2019-08-28 2024-04-02 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch
US11955952B2 (en) 2019-06-24 2024-04-09 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited bulk acoustic resonator split ladder filter
US11967942B2 (en) 2018-06-15 2024-04-23 Murata Manufacturing Co., Ltd Transversely-excited film bulk acoustic filters with symmetric layout
US11967946B2 (en) 2020-02-18 2024-04-23 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with a bonding layer and an etch-stop layer
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