TW200620575A - Hollow type semiconductor apparatus and its manufacture - Google Patents

Hollow type semiconductor apparatus and its manufacture

Info

Publication number
TW200620575A
TW200620575A TW094138994A TW94138994A TW200620575A TW 200620575 A TW200620575 A TW 200620575A TW 094138994 A TW094138994 A TW 094138994A TW 94138994 A TW94138994 A TW 94138994A TW 200620575 A TW200620575 A TW 200620575A
Authority
TW
Taiwan
Prior art keywords
type semiconductor
semiconductor apparatus
surface side
manufacture
hollow type
Prior art date
Application number
TW094138994A
Other languages
English (en)
Other versions
TWI298913B (zh
Inventor
Takao Sato
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200620575A publication Critical patent/TW200620575A/zh
Application granted granted Critical
Publication of TWI298913B publication Critical patent/TWI298913B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0504—Holders; Supports for bulk acoustic wave devices
    • H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
    • H03H9/0523—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps for flip-chip mounting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/105—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
TW094138994A 2004-11-22 2005-11-07 Hollow type semiconductor apparatus and its manufacture TW200620575A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004337775 2004-11-22
JP2005149504A JP2006173557A (ja) 2004-11-22 2005-05-23 中空型半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
TW200620575A true TW200620575A (en) 2006-06-16
TWI298913B TWI298913B (zh) 2008-07-11

Family

ID=36594640

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094138994A TW200620575A (en) 2004-11-22 2005-11-07 Hollow type semiconductor apparatus and its manufacture

Country Status (3)

Country Link
US (1) US7476567B2 (zh)
JP (1) JP2006173557A (zh)
TW (1) TW200620575A (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
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CN107040231A (zh) * 2016-02-04 2017-08-11 三星电机株式会社 声波滤波器装置、制造声波滤波器装置的封装件和方法
CN111003682A (zh) * 2018-10-08 2020-04-14 凤凰先驱股份有限公司 电子封装件及其制法
TWI723606B (zh) * 2018-12-14 2021-04-01 南韓商三星電機股份有限公司 聲波諧振器及其製造方法
US11431318B2 (en) 2018-12-14 2022-08-30 Samsung Electro-Mechanics Co., Ltd. Acoustic resonator and method of manufacturing thereof

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JP4873980B2 (ja) * 2006-04-04 2012-02-08 パナソニック株式会社 気密パッケージ
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KR100750741B1 (ko) * 2006-09-15 2007-08-22 삼성전기주식회사 캡 웨이퍼, 이를 구비한 반도체 칩, 및 그 제조방법
JP4825111B2 (ja) * 2006-11-06 2011-11-30 太陽誘電株式会社 圧電薄膜デバイスの製造方法
JP4798496B2 (ja) * 2006-11-09 2011-10-19 宇部興産株式会社 薄膜圧電デバイス及びその製造方法
JP5229220B2 (ja) * 2007-03-29 2013-07-03 株式会社村田製作所 液中物質検出センサー
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US7605466B2 (en) * 2007-10-15 2009-10-20 General Electric Company Sealed wafer packaging of microelectromechanical systems
DE102008005686B9 (de) * 2008-01-23 2019-06-27 Tdk Corporation MEMS-Bauelement und Verfahren zur Herstellung eines MEMS-Bauelements
JP5262136B2 (ja) * 2008-01-28 2013-08-14 株式会社村田製作所 電子部品の製造方法
JP4966897B2 (ja) * 2008-03-25 2012-07-04 株式会社フジクラ 半導体パッケージの製造方法
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US8476809B2 (en) * 2008-04-29 2013-07-02 Sand 9, Inc. Microelectromechanical systems (MEMS) resonators and related apparatus and methods
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DE102013106353B4 (de) * 2013-06-18 2018-06-28 Tdk Corporation Verfahren zum Aufbringen einer strukturierten Beschichtung auf ein Bauelement
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JP6516399B2 (ja) * 2013-10-25 2019-05-22 セイコーインスツル株式会社 電子デバイス
US9876483B2 (en) * 2014-03-28 2018-01-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator device including trench for providing stress relief
US9374059B1 (en) * 2015-01-06 2016-06-21 Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Film bulk acoustic resonator filter
US20160329481A1 (en) * 2015-05-04 2016-11-10 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator and filter including the same
CN107181470B (zh) 2016-03-10 2020-10-02 中芯国际集成电路制造(上海)有限公司 薄膜体声波谐振器、半导体器件及其制造方法
US11146232B2 (en) 2018-06-15 2021-10-12 Resonant Inc. Transversely-excited film bulk acoustic resonator with reduced spurious modes
US11929731B2 (en) 2018-02-18 2024-03-12 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode mark, and pitch
US20220116015A1 (en) 2018-06-15 2022-04-14 Resonant Inc. Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
US10911023B2 (en) 2018-06-15 2021-02-02 Resonant Inc. Transversely-excited film bulk acoustic resonator with etch-stop layer
US11936358B2 (en) 2020-11-11 2024-03-19 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with low thermal impedance
US11206009B2 (en) 2019-08-28 2021-12-21 Resonant Inc. Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch
US11323096B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Transversely-excited film bulk acoustic resonator with periodic etched holes
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US11876498B2 (en) 2018-06-15 2024-01-16 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method
US10826462B2 (en) 2018-06-15 2020-11-03 Resonant Inc. Transversely-excited film bulk acoustic resonators with molybdenum conductors
US11909381B2 (en) 2018-06-15 2024-02-20 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer
US11349452B2 (en) 2018-06-15 2022-05-31 Resonant Inc. Transversely-excited film bulk acoustic filters with symmetric layout
US11949402B2 (en) 2020-08-31 2024-04-02 Murata Manufacturing Co., Ltd. Resonators with different membrane thicknesses on the same die
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107040231A (zh) * 2016-02-04 2017-08-11 三星电机株式会社 声波滤波器装置、制造声波滤波器装置的封装件和方法
CN107040231B (zh) * 2016-02-04 2020-06-23 三星电机株式会社 声波滤波器装置、制造声波滤波器装置的封装件和方法
CN111003682A (zh) * 2018-10-08 2020-04-14 凤凰先驱股份有限公司 电子封装件及其制法
TWI723606B (zh) * 2018-12-14 2021-04-01 南韓商三星電機股份有限公司 聲波諧振器及其製造方法
US11431318B2 (en) 2018-12-14 2022-08-30 Samsung Electro-Mechanics Co., Ltd. Acoustic resonator and method of manufacturing thereof

Also Published As

Publication number Publication date
US7476567B2 (en) 2009-01-13
TWI298913B (zh) 2008-07-11
JP2006173557A (ja) 2006-06-29
US20060131731A1 (en) 2006-06-22

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