JP2014143289A - 電子デバイスの製造方法、電子デバイス及び発振器 - Google Patents
電子デバイスの製造方法、電子デバイス及び発振器 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 238000007772 electroless plating Methods 0.000 claims abstract description 55
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 238000005304 joining Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 154
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 44
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 238000009434 installation Methods 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000011900 installation process Methods 0.000 claims 1
- 239000002585 base Substances 0.000 description 62
- 239000011521 glass Substances 0.000 description 27
- 239000000463 material Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 10
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 229910000833 kovar Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910001374 Invar Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H03H9/10—Mounting in enclosures
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- Y10T29/49—Method of mechanical manufacture
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- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
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Abstract
【解決手段】電子デバイス1の製造方法は、絶縁性のベース基板2に貫通電極3を形成する貫通電極形成工程S1と、ベース基板2の一方の表面USに電子素子5を実装する電子素子実装工程S2と、電子素子5を収容する蓋体6をベース基板2に接合する蓋体設置工程S3と、ベース基板2の他方の表面LSと、当該表面に露出する貫通電極3の端面Mとに導電膜4を形成する導電膜形成工程S4と、貫通電極3の端面Mと端面Mの周囲の表面とに導電膜4を残して電極パターン15を形成する電極パターン形成工程と、電極パターン15の表面に無電解メッキ法により無電解メッキ膜を堆積して外部電極13を形成する外部電極形成工程S6と、を含む。
【選択図】図2
Description
図1は、本発明の第一実施形態に係る電子デバイス1の断面模式図である。電子デバイス1は、ベース基板2と、その上に接合される蓋体6と、内部に収容される電子素子5とを備える。ベース基板2は、絶縁性を有し、一方の表面USから他方の表面LSに貫通する複数の貫通電極3を有する。ベース基板2の一方の表面USには貫通電極3の端面を覆うように配線電極8が形成され、配線電極8の上に金属バンプ10を介して電子素子5が実装される。蓋体6は、中央に窪みを有し、この窪みに電子素子5を収容してベース基板2の一方の表面USに接合材9を介して接合される。ベース基板2は、更に、ベース基板2の他方の表面LSに露出する貫通電極3の端面Mと、その端面Mの周囲の他方の表面LSとに形成される外部電極13を有する。外部電極13は、導電膜4と導電膜4の表面に無電解メッキ法により形成される無電解メッキ膜11が積層される積層構造を有する。
図2は、本発明の第二実施形態に係る電子デバイスの製造方法を表す工程図である。図3及び図4は、本発明の第一実施形態に係る電子デバイスの製造方法における各工程の説明図である。同一の部分又は同一の機能を有する部分には同一の符号を付している。
これにより、導電膜と貫通電極の間の導電性が低下するのを防止することができる。また、外部電極形成工程S6の後に、無電解メッキ膜の表面に金属膜を形成する金属膜形成工程S7を備えることもできる。以下、具体的に説明する。
図5は、本発明の第三実施形態に係る電子デバイスの製造方法を表す工程図である。電子素子として圧電振動片を実装した圧電振動子からなる電子デバイスを製造する具体例である。なお、本実施形態は、多数の窪みが形成されるガラスウエハーと、多数の電子素子が実装されるガラスウエハーとを重ね合わせて接合し、多数の電子デバイス1を同時に形成する製造方法である。同一の工程には同一の符号を付している。
図6は、本発明の第四実施形態に係る発振器40の上面模式図である。上記第一実施形態において説明した電子デバイス1、又は、第二又は第三実施形態において説明した製造方法により製造した電子デバイス1を組み込んでいる。図6に示すように、発振器40は、基板43、この基板上に設置した電子デバイス1、集積回路41及び電子部品42を備えている。電子デバイス1は、外部電極に与えられる駆動信号に基づいて一定周波数の信号を生成し、集積回路41及び電子部品42は、電子デバイス1から供給される一定周波数の信号を処理して、クロック信号等の基準信号を生成する。本発明による電子デバイス1は、高信頼性でかつ小型に形成することができるので、発振器40の全体をコンパクトに構成することができる。
2 ベース基板
3 貫通電極
4 導電膜
5 電子素子
6 蓋体
8 配線電極
9 接合材
10 金属バンプ
11 無電解メッキ膜
12 金属膜
13 外部電極
15 電極パターン
US 一方の表面、LS 他方の表面LS、M 端面
Claims (11)
- 絶縁性のベース基板に貫通電極を形成する貫通電極形成工程と、
前記ベース基板の一方の表面に電子素子を実装する電子素子実装工程と、
前記電子素子を収容する蓋体を前記ベース基板に接合する蓋体設置工程と、
前記ベース基板の他方の表面と、他方の前記表面に露出する前記貫通電極の端面とに導電膜を形成する導電膜形成工程と、
前記貫通電極の端面と前記端面の周囲の前記表面とに前記導電膜を残して電極パターンを形成する電極パターン形成工程と、
前記電極パターンの表面に無電解メッキ法により無電解メッキ膜を堆積して外部電極を形成する外部電極形成工程と、を含む電子デバイスの製造方法。 - 前記電子素子実装工程及び蓋体設置工程の後に前記外部電極形成工程を行う請求項1に記載の電子デバイスの製造方法。
- 前記外部電極形成工程の後に、前記無電解メッキ膜の表面に金属膜を形成する金属膜形成工程を備える請求項1又は2に記載の電子デバイスの製造方法。
- 前記貫通電極は鉄−ニッケル系合金である請求項1〜3のいずれか一項に記載の電子デバイスの製造方法。
- 前記無電解メッキ膜はニッケル膜又は銅膜である請求項1〜4のいずれか一項に記載の電子デバイスの製造方法。
- 前記金属膜は金薄膜である請求項3に記載の電子デバイスの製造方法。
- 前記無電解メッキ膜は厚さが1μm〜10μmである請求項1〜6のいずれか一項に記載の電子デバイスの製造方法。
- 前記電子素子は水晶振動片である請求項1〜7のいずれか一項に記載の電子デバイスの製造方法。
- 複数の貫通電極が形成される絶縁性のベース基板と、
前記ベース基板の一方の表面に実装される電子素子と、
前記電子素子を収容し前記ベース基板に接合される蓋体と、を備え、
前記ベース基板の他方の表面に露出する前記貫通電極の端面と、前記端面の周囲の他方の前記表面とには外部電極が形成され、
前記外部電極は、導電膜と前記導電膜の表面に無電解メッキ法により形成される無電解メッキ膜とを有する電子デバイス。 - 前記貫通電極は鉄−ニッケル系合金からなり、前記導電膜は金属膜からなり、前記無電解メッキ膜はニッケル又は銅からなる請求項9に記載の電子デバイス。
- 請求項9に記載の電子デバイスと、
前記電子デバイスに駆動信号を供給する駆動回路と、を備える発振器。
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