JP2012044105A - 電子デバイス、電子機器及び電子デバイスの製造方法 - Google Patents
電子デバイス、電子機器及び電子デバイスの製造方法 Download PDFInfo
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- JP2012044105A JP2012044105A JP2010186312A JP2010186312A JP2012044105A JP 2012044105 A JP2012044105 A JP 2012044105A JP 2010186312 A JP2010186312 A JP 2010186312A JP 2010186312 A JP2010186312 A JP 2010186312A JP 2012044105 A JP2012044105 A JP 2012044105A
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Abstract
【解決手段】ベース10とベース10を貫通し、研磨によって端面の絶縁性物質を除去された貫通電極21と、貫通電極21の一方の端面に回路パターン30を形成し、回路パターン30上に形成する内部配線31を介して設置された電子部品40と、ベース10の電子部品40を設置した側と反対側に設置され、貫通電極21の他方の端面に接続する電極パターン60を形成し、電極パターン60上に形成する外部電極61と、ベースと接合し、ベース10上の電子部品40を保護するキャップ50と、を備えた電子デバイス。
【選択図】図1
Description
本発明の電子デバイスは、ガラスにより形成されたベースと、前記ベースを貫通する貫通電極と、前記貫通電極の前記ベースの1の面側の端面上に形成されるとともに、前記ベースの1の面上に形成された回路パターンと、前記貫通電極の前記ベースの1の面と反対の面側の端面上に形成されるとともに、前記ベースの1の面と反対の面上に形成された電極パターンと、前記貫通電極と電気的に接続し、前記回路パターン上を覆う内部配線と、前記内部配線と電気的に接続し、かつ前記内部配線上に形成された接続部と、前記空洞部に設けられ、前記接続部と電気的に接続し、かつ前記接続部に設置された電子部品と、前記貫通電極と電気的に接続し、前記電極パターン上に形成された外部電極とを備えることを特徴とする。
また、前記内部配線及び前記外部電極は、それぞれ単一の層で形成されていることを特徴とすることを特徴とする請求項1から5のいずれか一項に記載の電子デバイス。
また、本発明に係る電子デバイスを用いた電子機器を提供することができる。
図2(a)は、ベース10に貫通孔を形成する工程である。貫通孔は、サンドブラスト、レーザー加工、ドリル加工、熱プレス加工等で製造する。
10 ベース
20 貫通電極
21 切削された貫通電極
30 回路パターン
31 内部配線
40 電子部品
50 キャップ
61 電極パターン
60 外部電極
70 低融点ガラス
80 酸化膜
100 電子デバイス
110 ベース
120 金属ピン
130 電極
140 電子部品
150 封止材
160 キャップ
170 低融点ガラス
180 酸化膜
Claims (19)
- ガラスにより形成されたベースと、
前記ベースを貫通する貫通電極と、
前記貫通電極の前記ベースの1の面側の端面上に形成されるとともに、前記ベースの1の面上に形成された回路パターンと、
前記貫通電極の前記ベースの1の面と反対の面側の端面上に形成されるとともに、前記ベースの1の面と反対の面上に形成された電極パターンと、
前記貫通電極と電気的に接続し、前記回路パターン上に形成された内部配線と、
前記内部配線と電気的に接続し、かつ前記内部配線上に形成された接続部と、
前記接続部と電気的に接続し、かつ前記接続部に設置された電子部品と、
前記貫通電極と電気的に接続し、前記電極パターン上に形成された外部電極と、
を備えることを特徴とする電子デバイス。 - 前記回路パターンは、前記電極パターンと同一の材料で形成されることを特徴とする請求項1に記載の電子デバイス。
- 前記内部配線は、前記外部電極と同一の材料で形成されることを特徴とする請求項1または請求項2に記載の電子デバイス。
- 前記内部配線及び前記外部電極は、金属拡散を防止する拡散防止層と、拡散防止層上に形成され、最表面が金で形成された表面層とを備える金属膜で形成されることを特徴とする請求項3に記載の電子デバイス。
- 前記内部配線及び前記外部電極は、それぞれ単一の層で形成されていることを特徴とすることを特徴とする請求項1から4のいずれか一項に記載の電子デバイス。
- 前記回路パターン及び前記電極パターンは、表面に凹部が形成されることを特徴とする請求項1から5のいずれか一項に記載の電子デバイス。
- 前記回路パターン及び前記電極パターンはアルミニウムで形成されることを特徴とする請求項2に記載の電子デバイス。
- 前記拡散防止層は、ニッケルで形成されていることを特徴とする請求項4に記載の電子デバイス。
- 前記ベースの1の面と接合し、前記ベースとの間で外気と遮断された空洞部を形成するキャップを有することを特徴とする請求項1から6のいずれか一項に記載の電子デバイス。
- 前記キャップはアルミニウム、ガラス、シリコンのいずれかで形成されることを特徴とする請求項9に記載の電子デバイス。
- 前記電子部品が水晶振動子片であることを特徴とする請求項9または請求項10に記載の電子デバイス。
- 請求項1から11のいずれか一項に記載の電子デバイスを用いた電子機器。
- ベースに貫通孔を形成する工程と、
前記貫通孔に貫通電極を挿入して溶着する貫通電極形成工程と、
前記貫通電極の端面を研磨する工程と、
前記貫通電極の前記ベースの1の面側の端面上と、前記ベースの1の面上とに回路パターンを形成する回路パターン形成工程と、
前記貫通電極の前記ベースの1の面と反対の面側の端面上と、前記ベースの1の面と反対の面上とに電極パターンを形成する電極パターン形成工程と、
前記回路パターン上に内部配線を形成し、前記貫通電極と前記内部配線とを電気的に接続する内部配線形成工程と、
前記電極パターン上に外部電極を形成し、前記貫通電極と前記外部電極とを電気的に接続する外部電極形成工程と、
前記内部配線と電子部品とを電気的に接続する電子部品接続工程と、
を備えることを特徴とする電子デバイスの製造方法。 - 前記内部配線形成工程と前記外部電極形成工程とを同一の方法を用いて同一の工程で形成することを特徴とする請求項13に記載の電子デバイスの製造方法。
- 前記回路パターン形成工程と前記電極パターン形成工程とを同一の方法を用いて同一の工程で形成することを特徴とする請求項13または請求項14に記載の電子デバイスの製造方法。
- ベースに貫通孔を形成する工程と、
前記貫通孔に貫通電極を挿入して溶着する貫通電極形成工程と、
前記貫通電極の端面を研磨する工程と、
前記貫通電極の前記ベースの1の面側の端面上と、前記ベースの1の面上とに回路パターンを形成する回路パターン形成工程と、
前記回路パターン上に内部配線を形成し、前記貫通電極と前記内部配線とを電気的に接続する内部配線形成工程と、
前記内部配線と電子部品とを電気的に接続する電子部品接続工程と、
前記貫通電極の前記ベースの1の面と反対の面側の端面上と、前記ベースの1の面と反対の面上とに電極パターンを形成する電極パターン形成工程と、
前記電極パターン上に外部電極を形成し、前記貫通電極と前記外部電極とを電気的に接続する外部電極形成工程と、
を備えることを特徴とする電子デバイスの製造方法。 - 前記内部配線形成工程及び前記外部電極形成工程は、前記内部配線及び前記外部電極の少なくとも一方を無電解めっきで形成することを特徴とする請求項13から16のいずれか一項に記載の電子デバイスの製造方法。
- 前記電子部品接続工程の後、前記ベースの1の面とキャップとを接合し、前記ベースと前記キャップとの間で外気と遮断された空洞部を形成するとともに、前記空洞部に前記電子部品を設けるキャップ接合工程を備えることを特徴とする請求項13から17のいずれか一項に記載の電子デバイスの製造方法。
- 1つの前記ベース上に複数の電子デバイスを一括形成した後、前記電子デバイスを個片化する工程を備えることを特徴とする請求項13から18のいずれか一項に記載の電子デバイスの製造方法。
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US13/115,698 US8405463B2 (en) | 2010-08-23 | 2011-05-25 | Electronic device, electronic apparatus, and electronic device manufacturing method |
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Cited By (9)
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JP2013192119A (ja) * | 2012-03-15 | 2013-09-26 | Nippon Dempa Kogyo Co Ltd | 圧電デバイス及び圧電デバイスの製造方法 |
JP2014093734A (ja) * | 2012-11-06 | 2014-05-19 | Sii Crystal Technology Inc | 電子デバイス及び電子デバイスの製造方法 |
JP2014143559A (ja) * | 2013-01-23 | 2014-08-07 | Seiko Instruments Inc | 電子デバイスの製造方法、電子デバイス及び発振器 |
JP2014143288A (ja) * | 2013-01-23 | 2014-08-07 | Seiko Instruments Inc | 電子デバイス、発振器及び電子デバイスの製造方法 |
JP2014143558A (ja) * | 2013-01-23 | 2014-08-07 | Seiko Instruments Inc | 電子デバイスの製造方法、電子デバイス及び発振器 |
JP2014143289A (ja) * | 2013-01-23 | 2014-08-07 | Seiko Instruments Inc | 電子デバイスの製造方法、電子デバイス及び発振器 |
US9614493B2 (en) | 2013-06-10 | 2017-04-04 | Nihon Dempa Kogyo Co., Ltd. | Quartz crystal device and method for fabricating the same |
JP2015084385A (ja) * | 2013-10-25 | 2015-04-30 | セイコーインスツル株式会社 | 電子デバイス |
JP2015220392A (ja) * | 2014-05-20 | 2015-12-07 | 日亜化学工業株式会社 | 発光装置の製造方法 |
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US8405463B2 (en) | 2013-03-26 |
CN102377401B (zh) | 2015-11-25 |
JP5603166B2 (ja) | 2014-10-08 |
US20120044025A1 (en) | 2012-02-23 |
CN102377401A (zh) | 2012-03-14 |
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