JP2006028583A - 製造装置 - Google Patents
製造装置 Download PDFInfo
- Publication number
- JP2006028583A JP2006028583A JP2004208955A JP2004208955A JP2006028583A JP 2006028583 A JP2006028583 A JP 2006028583A JP 2004208955 A JP2004208955 A JP 2004208955A JP 2004208955 A JP2004208955 A JP 2004208955A JP 2006028583 A JP2006028583 A JP 2006028583A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mask
- chamber
- film
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 235
- 230000015572 biosynthetic process Effects 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 54
- 230000008021 deposition Effects 0.000 claims description 47
- 238000003384 imaging method Methods 0.000 claims description 19
- 239000012212 insulator Substances 0.000 claims description 17
- 230000008016 vaporization Effects 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 abstract description 173
- 239000000463 material Substances 0.000 abstract description 83
- 239000003086 colorant Substances 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 308
- 239000010410 layer Substances 0.000 description 111
- 238000000151 deposition Methods 0.000 description 43
- 150000002894 organic compounds Chemical class 0.000 description 30
- 239000004065 semiconductor Substances 0.000 description 27
- 239000011229 interlayer Substances 0.000 description 24
- 238000002347 injection Methods 0.000 description 21
- 239000007924 injection Substances 0.000 description 21
- 230000007246 mechanism Effects 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 19
- 238000000576 coating method Methods 0.000 description 18
- 239000012535 impurity Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 238000001704 evaporation Methods 0.000 description 14
- 229910045601 alloy Inorganic materials 0.000 description 13
- 239000000956 alloy Substances 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 230000005525 hole transport Effects 0.000 description 11
- 238000007789 sealing Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000002585 base Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 9
- 238000011049 filling Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 8
- 238000009434 installation Methods 0.000 description 8
- 238000005192 partition Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 239000000565 sealant Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000003566 sealing material Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 239000012788 optical film Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000005281 excited state Effects 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229910004261 CaF 2 Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 238000005323 electroforming Methods 0.000 description 3
- 230000005283 ground state Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 2
- ZVFQEOPUXVPSLB-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-phenyl-5-(4-phenylphenyl)-1,2,4-triazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 ZVFQEOPUXVPSLB-UHFFFAOYSA-N 0.000 description 2
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- -1 aromatic amine compound Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000001699 photocatalysis Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- UOCMXZLNHQBBOS-UHFFFAOYSA-N 2-(1,3-benzoxazol-2-yl)phenol zinc Chemical compound [Zn].Oc1ccccc1-c1nc2ccccc2o1.Oc1ccccc1-c1nc2ccccc2o1 UOCMXZLNHQBBOS-UHFFFAOYSA-N 0.000 description 1
- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 1
- PZLZJGZGJHZQAU-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-phenylphenyl)-1,2,4-triazole Chemical compound C1=CC(CC)=CC=C1N1C(C=2C=CC(=CC=2)C(C)(C)C)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 PZLZJGZGJHZQAU-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical group CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- SCZWJXTUYYSKGF-UHFFFAOYSA-N 5,12-dimethylquinolino[2,3-b]acridine-7,14-dione Chemical compound CN1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3N(C)C1=C2 SCZWJXTUYYSKGF-UHFFFAOYSA-N 0.000 description 1
- OKEZAUMKBWTTCR-AATRIKPKSA-N 5-methyl-2-[4-[(e)-2-[4-(5-methyl-1,3-benzoxazol-2-yl)phenyl]ethenyl]phenyl]-1,3-benzoxazole Chemical compound CC1=CC=C2OC(C3=CC=C(C=C3)/C=C/C3=CC=C(C=C3)C=3OC4=CC=C(C=C4N=3)C)=NC2=C1 OKEZAUMKBWTTCR-AATRIKPKSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910017911 MgIn Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001341 alkaline earth metal compounds Chemical class 0.000 description 1
- 125000005376 alkyl siloxane group Chemical group 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- XZCJVWCMJYNSQO-UHFFFAOYSA-N butyl pbd Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 XZCJVWCMJYNSQO-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 235000015110 jellies Nutrition 0.000 description 1
- 239000008274 jelly Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920003190 poly( p-benzamide) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
Abstract
【解決手段】本発明は、所望の蒸着領域に対して小さい開口を有するマスクを用い、該マスクを精密に移動させることによって、所望の蒸着領域全体に蒸着を行うことを特徴の一つとしている。また、マスクを移動させることに限定されず、マスクと基板とが相対的に移動すればよく、例えば、マスクを固定して基板をμmレベルで移動させてもよい。
【選択図】 図1
Description
ロード室、該ロード室に連結された搬送室、および該搬送室に連結された成膜室とを有する製造装置であり、
前記成膜室は、前記成膜室内を真空にする真空排気処理室と連結され、
基板を固定する基板移動手段と、
前記成膜室内でマスクを基板の一辺に対してX方向またはY方向に移動させるマスク移動手段と、
マスクと基板の位置合わせを行う撮像手段と、
基板およびマスクの下方に蒸着源と、該蒸着源を移動させる手段とを有することを特徴とする製造装置である。
ロード室、該ロード室に連結された搬送室、および該搬送室に連結された成膜室とを有する製造装置であり、
前記成膜室は、前記成膜室内を真空にする真空排気処理室と連結され、
マスクを固定するマスク移動手段と、
前記成膜室内で基板をマスクに対してX方向またはY方向に移動させる基板移動手段と、
マスクと基板の位置合わせを行う撮像手段と、
基板およびマスクの下方に蒸着源と、該蒸着源を移動させる手段とを有することを特徴とする製造装置である。
ロード室、該ロード室に連結された搬送室、および該搬送室に連結された成膜室とを有する製造装置であり、
前記成膜室は、前記成膜室内を真空にする真空排気処理室と連結され、
基板を固定する基板移動手段と、
前記成膜室内でマスクを基板の一辺に対してX方向またはY方向に移動させるマスク移動手段と、
マスクと基板の位置合わせを行う撮像手段と、
固定された気化手段と、を有することを特徴とする製造装置である。
ロード室、該ロード室に連結された搬送室、および該搬送室に連結された成膜室とを有する製造装置であり、
前記成膜室は、前記成膜室内を真空にする真空排気処理室と連結され、
マスクを固定するマスク移動手段と、
前記成膜室内で基板をマスクに対してX方向またはY方向に移動させる基板移動手段と、
マスクと基板の位置合わせを行う撮像手段と、
固定された気化手段と、を有することを特徴とする製造装置である。
前記マスクに設けられた開口の一辺は、前記電極の一辺と等しく、且つ、開口の面積は、電極面積より小さいことを特徴の一つとしている。
本発明の実施形態について、以下に説明する。
ここでは、実施の形態1とは異なる成膜装置を以下に示す。図15(A)は成膜装置の断面図を示している。
透光性を有する平坦化膜510としては、無機材料(酸化シリコン、窒化シリコン、酸化窒化シリコンなど)、感光性または非感光性の有機材料(ポリイミド、アクリル、ポリアミド、ポリイミドアミド、レジストまたはベンゾシクロブテン)、またはこれらの積層などを用いる。
102:真空排気手段
103:透明窓部
104:撮像手段
105:シャッター
106:蒸着源シャッター
107:基板ステージ
108:基板移動手段
109:マスク移動手段
110:移動機構
114:蒸着マスク
115:マスクフレーム
116:開口
117:蒸着源ホルダ
118:蒸着材料(B)
120:絶縁物
121:第1の電極
123:基板
130、131:蒸着した蒸着材料(B)
135、136:第1の電極の未蒸着部分
141:蒸着膜(R)
142:蒸着膜(G)
143:蒸着膜(B)
154:蒸着マスク
156:開口
161:蒸着膜(R)
162:蒸着膜(G)
163:蒸着膜(B)
Claims (9)
- ロード室、該ロード室に連結された搬送室、および該搬送室に連結された成膜室とを有する製造装置であり、
前記成膜室は、前記成膜室内を真空にする真空排気処理室と連結され、
基板を固定する基板移動手段と、
前記成膜室内でマスクを基板の一辺に対してX方向またはY方向に移動させるマスク移動手段と、
マスクと基板の位置合わせを行う撮像手段と、
基板およびマスクの下方に蒸着源と、該蒸着源を移動させる手段とを有することを特徴とする製造装置。 - ロード室、該ロード室に連結された搬送室、および該搬送室に連結された成膜室とを有する製造装置であり、
前記成膜室は、前記成膜室内を真空にする真空排気処理室と連結され、
マスクを固定するマスク移動手段と、
前記成膜室内で基板をマスクに対してX方向またはY方向に移動させる基板移動手段と、
マスクと基板の位置合わせを行う撮像手段と、
基板およびマスクの下方に蒸着源と、該蒸着源を移動させる手段とを有することを特徴とする製造装置。 - 請求項1または請求項2において、前記マスクの厚さは、10μm〜100μmであることを特徴とする製造装置。
- ロード室、該ロード室に連結された搬送室、および該搬送室に連結された成膜室とを有する製造装置であり、
前記成膜室は、前記成膜室内を真空にする真空排気処理室と連結され、
基板を固定する基板移動手段と、
前記成膜室内でマスクを基板の一辺に対してX方向またはY方向に移動させるマスク移動手段と、
マスクと基板の位置合わせを行う撮像手段と、
固定された気化手段と、を有することを特徴とする製造装置。 - ロード室、該ロード室に連結された搬送室、および該搬送室に連結された成膜室とを有する製造装置であり、
前記成膜室は、前記成膜室内を真空にする真空排気処理室と連結され、
マスクを固定するマスク移動手段と、
前記成膜室内で基板をマスクに対してX方向またはY方向に移動させる基板移動手段と、
マスクと基板の位置合わせを行う撮像手段と、
固定された気化手段と、を有することを特徴とする製造装置。 - 請求項1乃至5のいずれか一において、前記成膜室内で基板に成膜を行うと同時に、基板に対してマスクを相対的に移動させることを特徴とする製造装置。
- 請求項1乃至5のいずれか一において、前記成膜室内で基板に対してマスクを相対的に移動させた後に成膜を行うことを複数回繰り返すことで膜形成が行われることを特徴とする製造装置。
- 請求項1乃至7のいずれか一において、前記基板には、規則的に配列された複数の電極と、隣り合う電極間に電極端部を覆う絶縁物とが設けられ、
前記マスクに設けられた開口の一辺は、前記電極の一辺と等しく、且つ、開口の面積は、電極面積より小さいことを特徴とする製造装置。 - 請求項1乃至8のいずれか一において、前記マスクに設けられた開口の形状は、矩形または菱形であることを特徴とする製造装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004208955A JP4545504B2 (ja) | 2004-07-15 | 2004-07-15 | 膜形成方法、発光装置の作製方法 |
US11/178,855 US20060011136A1 (en) | 2004-07-15 | 2005-07-11 | Manufacturing apparatus |
US12/791,251 US20100239746A1 (en) | 2004-07-15 | 2010-06-01 | Manufacturing Apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004208955A JP4545504B2 (ja) | 2004-07-15 | 2004-07-15 | 膜形成方法、発光装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006028583A true JP2006028583A (ja) | 2006-02-02 |
JP2006028583A5 JP2006028583A5 (ja) | 2007-08-09 |
JP4545504B2 JP4545504B2 (ja) | 2010-09-15 |
Family
ID=35598112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004208955A Expired - Fee Related JP4545504B2 (ja) | 2004-07-15 | 2004-07-15 | 膜形成方法、発光装置の作製方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US20060011136A1 (ja) |
JP (1) | JP4545504B2 (ja) |
Cited By (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006302897A (ja) * | 2005-04-20 | 2006-11-02 | Applied Films Gmbh & Co Kg | 磁気マスクホルダー |
WO2007094322A1 (ja) * | 2006-02-14 | 2007-08-23 | Tokyo Electron Limited | 発光素子、発光素子の製造方法および基板処理装置 |
JP2008059867A (ja) * | 2006-08-30 | 2008-03-13 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置とその製造方法及び電子機器 |
WO2011135667A1 (ja) * | 2010-04-27 | 2011-11-03 | 株式会社シンクロン | 半導体発光素子基板の製造方法 |
WO2012053402A1 (ja) * | 2010-10-19 | 2012-04-26 | シャープ株式会社 | 蒸着装置、蒸着方法、並びに、有機エレクトロルミネッセンス表示装置の製造方法 |
WO2012098994A1 (ja) * | 2011-01-18 | 2012-07-26 | シャープ株式会社 | 被成膜基板、有機el表示装置 |
JP2012178357A (ja) * | 2007-09-13 | 2012-09-13 | Semiconductor Energy Lab Co Ltd | 照明装置の作製方法、及び照明装置 |
JP2013127977A (ja) * | 2007-06-01 | 2013-06-27 | Semiconductor Energy Lab Co Ltd | 発光装置の作製方法及び発光装置 |
KR20140017100A (ko) * | 2012-07-30 | 2014-02-11 | 주식회사 원익아이피에스 | 셔틀 및 그를 가지는 기판처리장치 |
KR20140017088A (ko) * | 2012-07-30 | 2014-02-11 | 주식회사 원익아이피에스 | 셔틀 및 그를 가지는 기판처리장치 |
KR20140038593A (ko) * | 2012-09-20 | 2014-03-31 | 주식회사 원익아이피에스 | 기판처리장치의 셔틀 및 기판처리장치 |
US8833294B2 (en) | 2010-07-30 | 2014-09-16 | Samsung Display Co., Ltd. | Thin film deposition apparatus including patterning slit sheet and method of manufacturing organic light-emitting display device with the same |
US8852687B2 (en) | 2010-12-13 | 2014-10-07 | Samsung Display Co., Ltd. | Organic layer deposition apparatus |
US8859325B2 (en) | 2010-01-14 | 2014-10-14 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
KR20140120738A (ko) * | 2013-04-04 | 2014-10-14 | 삼성디스플레이 주식회사 | 디스플레이 제조방법 및 이에 사용될 수 있는 증착장치 |
US8859043B2 (en) | 2011-05-25 | 2014-10-14 | Samsung Display Co., Ltd. | Organic layer deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
US8865252B2 (en) | 2010-04-06 | 2014-10-21 | Samsung Display Co., Ltd. | Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
US8871542B2 (en) | 2010-10-22 | 2014-10-28 | Samsung Display Co., Ltd. | Method of manufacturing organic light emitting display apparatus, and organic light emitting display apparatus manufactured by using the method |
US8876975B2 (en) | 2009-10-19 | 2014-11-04 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US8882921B2 (en) | 2009-06-08 | 2014-11-11 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US8882922B2 (en) | 2010-11-01 | 2014-11-11 | Samsung Display Co., Ltd. | Organic layer deposition apparatus |
US8882920B2 (en) | 2009-06-05 | 2014-11-11 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US8882556B2 (en) | 2010-02-01 | 2014-11-11 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
US8894458B2 (en) | 2010-04-28 | 2014-11-25 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
US8906731B2 (en) | 2011-05-27 | 2014-12-09 | Samsung Display Co., Ltd. | Patterning slit sheet assembly, organic layer deposition apparatus, method of manufacturing organic light-emitting display apparatus, and the organic light-emitting display apparatus |
US8916237B2 (en) | 2009-05-22 | 2014-12-23 | Samsung Display Co., Ltd. | Thin film deposition apparatus and method of depositing thin film |
US8945979B2 (en) | 2012-11-09 | 2015-02-03 | Samsung Display Co., Ltd. | Organic layer deposition apparatus, method of manufacturing organic light-emitting display apparatus by using the same, and organic light-emitting display apparatus manufactured by the method |
US8951610B2 (en) | 2011-07-04 | 2015-02-10 | Samsung Display Co., Ltd. | Organic layer deposition apparatus |
US8962360B2 (en) | 2013-06-17 | 2015-02-24 | Samsung Display Co., Ltd. | Organic layer deposition apparatus and method of manufacturing organic light-emitting display device by using the organic layer deposition apparatus |
US8968829B2 (en) | 2009-08-25 | 2015-03-03 | Samsung Display Co., Ltd. | Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
US8973525B2 (en) | 2010-03-11 | 2015-03-10 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US9040313B2 (en) | 2013-06-17 | 2015-05-26 | Samsung Display Co., Ltd. | Method of manufacturing organic light emitting display device using organic layer deposition apparatus |
US9121095B2 (en) | 2009-05-22 | 2015-09-01 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US9136476B2 (en) | 2013-03-20 | 2015-09-15 | Samsung Display Co., Ltd. | Method of manufacturing organic light-emitting display apparatus, and organic light-emitting display apparatus manufactured by the method |
US9249493B2 (en) | 2011-05-25 | 2016-02-02 | Samsung Display Co., Ltd. | Organic layer deposition apparatus and method of manufacturing organic light-emitting display apparatus by using the same |
US9279177B2 (en) | 2010-07-07 | 2016-03-08 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
US9388488B2 (en) | 2010-10-22 | 2016-07-12 | Samsung Display Co., Ltd. | Organic film deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
US9450140B2 (en) | 2009-08-27 | 2016-09-20 | Samsung Display Co., Ltd. | Thin film deposition apparatus and method of manufacturing organic light-emitting display apparatus using the same |
US9593408B2 (en) | 2009-08-10 | 2017-03-14 | Samsung Display Co., Ltd. | Thin film deposition apparatus including deposition blade |
US9624580B2 (en) | 2009-09-01 | 2017-04-18 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US9644837B2 (en) | 2010-09-30 | 2017-05-09 | Black & Decker Inc. | Lighted power tool |
US9748483B2 (en) | 2011-01-12 | 2017-08-29 | Samsung Display Co., Ltd. | Deposition source and organic layer deposition apparatus including the same |
US10246769B2 (en) | 2010-01-11 | 2019-04-02 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
JP2020063465A (ja) * | 2018-10-15 | 2020-04-23 | キヤノントッキ株式会社 | 成膜装置、製造システム、有機elパネルの製造システム、及び成膜方法 |
JP2020180327A (ja) * | 2019-04-24 | 2020-11-05 | キヤノン株式会社 | 基板処理装置および基板処理方法 |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7792489B2 (en) | 2003-12-26 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, electronic appliance, and method for manufacturing light emitting device |
US7817175B2 (en) * | 2005-08-30 | 2010-10-19 | Samsung Mobile Display Co., Ltd. | Laser induced thermal imaging apparatus and fabricating method of organic light emitting diode using the same |
JP4789551B2 (ja) * | 2005-09-06 | 2011-10-12 | 株式会社半導体エネルギー研究所 | 有機el成膜装置 |
JP4974504B2 (ja) * | 2005-10-13 | 2012-07-11 | 株式会社半導体エネルギー研究所 | 成膜装置、発光装置の作製方法 |
JP2007128845A (ja) * | 2005-11-04 | 2007-05-24 | Samsung Sdi Co Ltd | レーザ熱転写装置及びレーザ熱転写方法 |
JP2007128844A (ja) * | 2005-11-04 | 2007-05-24 | Samsung Sdi Co Ltd | レーザ熱転写装置及びレーザ熱転写方法そしてこれを利用した有機発光表示素子 |
US20080220537A1 (en) * | 2007-03-07 | 2008-09-11 | Pacific Biosciences Of California, Inc. | Substrates and methods for selective immobilization of active molecules |
KR101453877B1 (ko) * | 2008-08-04 | 2014-10-23 | 삼성디스플레이 주식회사 | 유기 el 소자의 발광층을 증착하는 방법, 상기 증착방법을 포함하는 유기 el 소자의 제조 방법, 및 상기제조 방법에 의해 제조된 유기 el 소자 |
DE102008037387A1 (de) * | 2008-09-24 | 2010-03-25 | Aixtron Ag | Verfahren sowie Vorrichtung zum Abscheiden lateral strukturierter Schichten mittels einer magnetisch auf einem Substrathalter gehaltenen Schattenmaske |
KR101074792B1 (ko) * | 2009-06-12 | 2011-10-19 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
KR101117719B1 (ko) * | 2009-06-24 | 2012-03-08 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
US9325007B2 (en) * | 2009-10-27 | 2016-04-26 | Applied Materials, Inc. | Shadow mask alignment and management system |
KR101146982B1 (ko) * | 2009-11-20 | 2012-05-22 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 및 유기 발광 디스플레이 장치 제조 방법 |
KR101174874B1 (ko) * | 2010-01-06 | 2012-08-17 | 삼성디스플레이 주식회사 | 증착 소스, 박막 증착 장치 및 유기 발광 표시 장치 제조 방법 |
KR101182239B1 (ko) * | 2010-03-17 | 2012-09-12 | 삼성디스플레이 주식회사 | 마스크 및 이를 포함하는 마스크 조립체 |
US9490166B2 (en) * | 2010-12-08 | 2016-11-08 | Evatec Ag | Apparatus and method for depositing a layer onto a substrate |
WO2012090771A1 (ja) * | 2010-12-27 | 2012-07-05 | シャープ株式会社 | 蒸着膜の形成方法及び表示装置の製造方法 |
US9076989B2 (en) | 2010-12-27 | 2015-07-07 | Sharp Kabushiki Kaisha | Method for forming deposition film, and method for producing display device |
JP2012214834A (ja) * | 2011-03-31 | 2012-11-08 | Hitachi High-Technologies Corp | 真空蒸着装置および有機el表示装置の製造方法 |
KR101820020B1 (ko) * | 2011-04-25 | 2018-01-19 | 삼성디스플레이 주식회사 | 박막 증착용 마스크 프레임 어셈블리 |
TWI542727B (zh) * | 2011-06-17 | 2016-07-21 | 應用材料股份有限公司 | 處理腔室 |
KR20130004830A (ko) * | 2011-07-04 | 2013-01-14 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법 |
KR20130010730A (ko) | 2011-07-19 | 2013-01-29 | 삼성디스플레이 주식회사 | 증착 소스 및 이를 구비한 증착 장치 |
KR20130015144A (ko) | 2011-08-02 | 2013-02-13 | 삼성디스플레이 주식회사 | 증착원어셈블리, 유기층증착장치 및 이를 이용한 유기발광표시장치의 제조 방법 |
US8709270B2 (en) | 2011-12-13 | 2014-04-29 | Intermolecular, Inc. | Masking method and apparatus |
KR101946463B1 (ko) | 2012-07-27 | 2019-02-12 | 삼성디스플레이 주식회사 | 라미네이팅 장치 및 라미네이팅 방법 |
US20140041587A1 (en) * | 2012-08-10 | 2014-02-13 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Masking Device for Vapor Deposition of Organic Material of Organic Electroluminescent Diode |
KR101971199B1 (ko) * | 2012-09-21 | 2019-08-14 | 삼성디스플레이 주식회사 | 유기층 증착 장치, 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
KR102081284B1 (ko) | 2013-04-18 | 2020-02-26 | 삼성디스플레이 주식회사 | 증착장치, 이를 이용한 유기발광 디스플레이 장치 제조 방법 및 유기발광 디스플레이 장치 |
KR20140135036A (ko) * | 2013-05-15 | 2014-11-25 | 삼성디스플레이 주식회사 | 기화기 및 이를 구비한 박막 증착 시스템 |
CN103484818A (zh) * | 2013-09-25 | 2014-01-01 | 京东方科技集团股份有限公司 | 蒸镀方法、蒸镀装置和发光器件 |
KR20150101906A (ko) * | 2014-02-27 | 2015-09-04 | (주)브이앤아이솔루션 | 얼라이너 구조 및 얼라인 방법 |
KR20170049716A (ko) * | 2015-10-27 | 2017-05-11 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 유기층 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조방법 |
CN109072401B (zh) * | 2016-03-10 | 2021-05-11 | 鸿海精密工业股份有限公司 | 蒸镀掩膜、蒸镀装置、蒸镀方法及有机el显示装置的制造方法 |
CN205999471U (zh) * | 2016-09-26 | 2017-03-08 | 京东方科技集团股份有限公司 | 一种张网机 |
JP6785171B2 (ja) * | 2017-03-08 | 2020-11-18 | 株式会社日本製鋼所 | 成膜方法および電子装置の製造方法並びにプラズマ原子層成長装置 |
CN106939408B (zh) * | 2017-05-08 | 2019-09-13 | 武汉华星光电技术有限公司 | 一种蒸镀装置 |
CN108977762B (zh) * | 2017-06-05 | 2019-12-27 | 京东方科技集团股份有限公司 | 掩膜板、套装掩膜板和蒸镀系统 |
CN107254673B (zh) * | 2017-06-12 | 2019-07-19 | 京东方科技集团股份有限公司 | 蒸镀系统和蒸镀系统的蒸镀方法 |
CN109055892B (zh) * | 2018-07-27 | 2020-01-10 | 云谷(固安)科技有限公司 | 掩膜板及蒸镀装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05108014A (ja) * | 1991-10-16 | 1993-04-30 | Fuji Electric Co Ltd | El表示パネルのカラー表示用発光膜の成膜方法 |
JP2001247959A (ja) * | 1999-12-27 | 2001-09-14 | Semiconductor Energy Lab Co Ltd | 成膜装置及び成膜方法 |
JP2001296819A (ja) * | 2000-04-17 | 2001-10-26 | Nec Corp | 有機薄膜elデバイス及びその製造方法 |
JP2002175878A (ja) * | 2000-09-28 | 2002-06-21 | Sanyo Electric Co Ltd | 層の形成方法及びカラー発光装置の製造方法 |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6827A (en) * | 1849-10-30 | Mill for grinding | ||
US162314A (en) * | 1875-04-20 | Improvement in bottles | ||
US197760A (en) * | 1877-12-04 | Improvement in tobacco-boxes | ||
US123804A (en) * | 1872-02-20 | Improvement in lifting apparatus | ||
US139984A (en) * | 1873-06-17 | Improvement in coffee-roasters | ||
US35360A (en) * | 1862-05-27 | Improvement | ||
US31442A (en) * | 1861-02-19 | Hat-block | ||
US11205A (en) * | 1854-06-27 | Improvement in kerosene burning-fluids | ||
US221620A (en) * | 1879-11-11 | Improvement in plant and vine culture | ||
US53720A (en) * | 1866-04-03 | Improvement in smut-machines | ||
US9154A (en) * | 1852-07-27 | Block for stretching coats | ||
US194484A (en) * | 1877-08-21 | Improvement in combined cane and stool | ||
US9538A (en) * | 1853-01-11 | Boilers | ||
US232563A (en) * | 1880-09-21 | David p | ||
US2435997A (en) * | 1943-11-06 | 1948-02-17 | American Optical Corp | Apparatus for vapor coating of large surfaces |
FR2244014B1 (ja) * | 1973-09-17 | 1976-10-08 | Bosch Gmbh Robert | |
US4066481A (en) * | 1974-11-11 | 1978-01-03 | Rockwell International Corporation | Metalorganic chemical vapor deposition of IVA-IVA compounds and composite |
US4023523A (en) * | 1975-04-23 | 1977-05-17 | Xerox Corporation | Coater hardware and method for obtaining uniform photoconductive layers on a xerographic photoreceptor |
US4187801A (en) * | 1977-12-12 | 1980-02-12 | Commonwealth Scientific Corporation | Method and apparatus for transporting workpieces |
US4446357A (en) * | 1981-10-30 | 1984-05-01 | Kennecott Corporation | Resistance-heated boat for metal vaporization |
DE3330092A1 (de) * | 1983-08-20 | 1985-03-07 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren zum einstellen der oertlichen verdampfungsleistung an verdampfern in vakuumaufdampfprozessen |
US4897290A (en) * | 1986-09-26 | 1990-01-30 | Konishiroku Photo Industry Co., Ltd. | Method for manufacturing the substrate for liquid crystal display |
US4885211A (en) * | 1987-02-11 | 1989-12-05 | Eastman Kodak Company | Electroluminescent device with improved cathode |
US4769292A (en) * | 1987-03-02 | 1988-09-06 | Eastman Kodak Company | Electroluminescent device with modified thin film luminescent zone |
US5186975A (en) * | 1987-10-14 | 1993-02-16 | Enichem S.P.A. | Process and machinery for step-and-repeat vacuum-deposition of large-area thin-film-electronics matrix-circuits on monolithic glass panes through small perforated metal masks |
US5258325A (en) * | 1990-12-31 | 1993-11-02 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
US5429884A (en) * | 1992-01-17 | 1995-07-04 | Pioneer Electronic Corporation | Organic electroluminescent element |
JP3618110B2 (ja) * | 1993-08-30 | 2005-02-09 | 株式会社デンソー | エレクトロルミネッセンス素子の製法 |
KR100291971B1 (ko) * | 1993-10-26 | 2001-10-24 | 야마자끼 순페이 | 기판처리장치및방법과박막반도체디바이스제조방법 |
US5817366A (en) * | 1996-07-29 | 1998-10-06 | Tdk Corporation | Method for manufacturing organic electroluminescent element and apparatus therefor |
JP2848371B2 (ja) * | 1997-02-21 | 1999-01-20 | 日本電気株式会社 | 有機el表示装置及びその製造方法 |
JPH1161386A (ja) * | 1997-08-22 | 1999-03-05 | Fuji Electric Co Ltd | 有機薄膜発光素子の成膜装置 |
JP3782245B2 (ja) * | 1998-10-28 | 2006-06-07 | Tdk株式会社 | 有機el表示装置の製造装置及び製造方法 |
US6214631B1 (en) * | 1998-10-30 | 2001-04-10 | The Trustees Of Princeton University | Method for patterning light emitting devices incorporating a movable mask |
JP3019095B1 (ja) * | 1998-12-22 | 2000-03-13 | 日本電気株式会社 | 有機薄膜elデバイスの製造方法 |
US6244212B1 (en) * | 1999-12-30 | 2001-06-12 | Genvac Aerospace Corporation | Electron beam evaporation assembly for high uniform thin film |
DE10007059A1 (de) * | 2000-02-16 | 2001-08-23 | Aixtron Ag | Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung |
US6237529B1 (en) * | 2000-03-03 | 2001-05-29 | Eastman Kodak Company | Source for thermal physical vapor deposition of organic electroluminescent layers |
US6770562B2 (en) * | 2000-10-26 | 2004-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus and film formation method |
DE10062713C1 (de) * | 2000-12-15 | 2002-09-05 | Zeiss Carl | Verfahren zum Beschichten von Substraten und Maskenhaltern |
US6992439B2 (en) * | 2001-02-22 | 2006-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device with sealing structure for protecting organic light emitting element |
US6576293B2 (en) * | 2001-03-26 | 2003-06-10 | Sharp Laboratories Of America, Inc. | Method to improve copper thin film adhesion to metal nitride substrates by the addition of water |
US20040040504A1 (en) * | 2002-08-01 | 2004-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
TWI277363B (en) * | 2002-08-30 | 2007-03-21 | Semiconductor Energy Lab | Fabrication system, light-emitting device and fabricating method of organic compound-containing layer |
US7211461B2 (en) * | 2003-02-14 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
JP4493926B2 (ja) * | 2003-04-25 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 製造装置 |
US8123862B2 (en) * | 2003-08-15 | 2012-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Deposition apparatus and manufacturing apparatus |
-
2004
- 2004-07-15 JP JP2004208955A patent/JP4545504B2/ja not_active Expired - Fee Related
-
2005
- 2005-07-11 US US11/178,855 patent/US20060011136A1/en not_active Abandoned
-
2010
- 2010-06-01 US US12/791,251 patent/US20100239746A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05108014A (ja) * | 1991-10-16 | 1993-04-30 | Fuji Electric Co Ltd | El表示パネルのカラー表示用発光膜の成膜方法 |
JP2001247959A (ja) * | 1999-12-27 | 2001-09-14 | Semiconductor Energy Lab Co Ltd | 成膜装置及び成膜方法 |
JP2001296819A (ja) * | 2000-04-17 | 2001-10-26 | Nec Corp | 有機薄膜elデバイス及びその製造方法 |
JP2002175878A (ja) * | 2000-09-28 | 2002-06-21 | Sanyo Electric Co Ltd | 層の形成方法及びカラー発光装置の製造方法 |
Cited By (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8361230B2 (en) | 2005-04-20 | 2013-01-29 | Applied Materials Gmbh & Co. Kg | Magnetic mask holder |
JP2006302897A (ja) * | 2005-04-20 | 2006-11-02 | Applied Films Gmbh & Co Kg | 磁気マスクホルダー |
WO2007094322A1 (ja) * | 2006-02-14 | 2007-08-23 | Tokyo Electron Limited | 発光素子、発光素子の製造方法および基板処理装置 |
JP2008059867A (ja) * | 2006-08-30 | 2008-03-13 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置とその製造方法及び電子機器 |
US7781967B2 (en) | 2006-08-30 | 2010-08-24 | Seiko Epson Corporation | Organic electroluminescence device having an improved barrier structure, and manufacturing method therefore and electronic apparatus |
JP2013127977A (ja) * | 2007-06-01 | 2013-06-27 | Semiconductor Energy Lab Co Ltd | 発光装置の作製方法及び発光装置 |
JP2015092504A (ja) * | 2007-06-01 | 2015-05-14 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
JP2012178357A (ja) * | 2007-09-13 | 2012-09-13 | Semiconductor Energy Lab Co Ltd | 照明装置の作製方法、及び照明装置 |
US11920233B2 (en) | 2009-05-22 | 2024-03-05 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US8916237B2 (en) | 2009-05-22 | 2014-12-23 | Samsung Display Co., Ltd. | Thin film deposition apparatus and method of depositing thin film |
US9121095B2 (en) | 2009-05-22 | 2015-09-01 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US11624107B2 (en) | 2009-05-22 | 2023-04-11 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US10689746B2 (en) | 2009-05-22 | 2020-06-23 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US9873937B2 (en) | 2009-05-22 | 2018-01-23 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US8882920B2 (en) | 2009-06-05 | 2014-11-11 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US8882921B2 (en) | 2009-06-08 | 2014-11-11 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US9593408B2 (en) | 2009-08-10 | 2017-03-14 | Samsung Display Co., Ltd. | Thin film deposition apparatus including deposition blade |
US8968829B2 (en) | 2009-08-25 | 2015-03-03 | Samsung Display Co., Ltd. | Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
US9450140B2 (en) | 2009-08-27 | 2016-09-20 | Samsung Display Co., Ltd. | Thin film deposition apparatus and method of manufacturing organic light-emitting display apparatus using the same |
US9624580B2 (en) | 2009-09-01 | 2017-04-18 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US9224591B2 (en) | 2009-10-19 | 2015-12-29 | Samsung Display Co., Ltd. | Method of depositing a thin film |
US8876975B2 (en) | 2009-10-19 | 2014-11-04 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US10287671B2 (en) | 2010-01-11 | 2019-05-14 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US10246769B2 (en) | 2010-01-11 | 2019-04-02 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US8859325B2 (en) | 2010-01-14 | 2014-10-14 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
US8882556B2 (en) | 2010-02-01 | 2014-11-11 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
US8973525B2 (en) | 2010-03-11 | 2015-03-10 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US9453282B2 (en) | 2010-03-11 | 2016-09-27 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US8865252B2 (en) | 2010-04-06 | 2014-10-21 | Samsung Display Co., Ltd. | Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
WO2011135667A1 (ja) * | 2010-04-27 | 2011-11-03 | 株式会社シンクロン | 半導体発光素子基板の製造方法 |
US8894458B2 (en) | 2010-04-28 | 2014-11-25 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
US9136310B2 (en) | 2010-04-28 | 2015-09-15 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
US9279177B2 (en) | 2010-07-07 | 2016-03-08 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
US8833294B2 (en) | 2010-07-30 | 2014-09-16 | Samsung Display Co., Ltd. | Thin film deposition apparatus including patterning slit sheet and method of manufacturing organic light-emitting display device with the same |
US9644837B2 (en) | 2010-09-30 | 2017-05-09 | Black & Decker Inc. | Lighted power tool |
JP5298244B2 (ja) * | 2010-10-19 | 2013-09-25 | シャープ株式会社 | 蒸着装置 |
US9741932B2 (en) | 2010-10-19 | 2017-08-22 | Sharp Kabushiki Kaisha | Vapor deposition method and method for producing an organic electroluminescence display device |
JP2013239441A (ja) * | 2010-10-19 | 2013-11-28 | Sharp Corp | 蒸着装置、蒸着方法、並びに、有機エレクトロルミネッセンス表示装置の製造方法 |
WO2012053402A1 (ja) * | 2010-10-19 | 2012-04-26 | シャープ株式会社 | 蒸着装置、蒸着方法、並びに、有機エレクトロルミネッセンス表示装置の製造方法 |
US8871542B2 (en) | 2010-10-22 | 2014-10-28 | Samsung Display Co., Ltd. | Method of manufacturing organic light emitting display apparatus, and organic light emitting display apparatus manufactured by using the method |
US9388488B2 (en) | 2010-10-22 | 2016-07-12 | Samsung Display Co., Ltd. | Organic film deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
US8882922B2 (en) | 2010-11-01 | 2014-11-11 | Samsung Display Co., Ltd. | Organic layer deposition apparatus |
US8852687B2 (en) | 2010-12-13 | 2014-10-07 | Samsung Display Co., Ltd. | Organic layer deposition apparatus |
US9748483B2 (en) | 2011-01-12 | 2017-08-29 | Samsung Display Co., Ltd. | Deposition source and organic layer deposition apparatus including the same |
JP5384755B2 (ja) * | 2011-01-18 | 2014-01-08 | シャープ株式会社 | 被成膜基板、有機el表示装置 |
KR101539874B1 (ko) * | 2011-01-18 | 2015-07-27 | 샤프 가부시키가이샤 | 피성막 기판, 유기 el 표시 장치 |
US9076977B2 (en) | 2011-01-18 | 2015-07-07 | Sharp Kabushiki Kaisha | Substrate to which film is formed and organic EL display device |
WO2012098994A1 (ja) * | 2011-01-18 | 2012-07-26 | シャープ株式会社 | 被成膜基板、有機el表示装置 |
US8859043B2 (en) | 2011-05-25 | 2014-10-14 | Samsung Display Co., Ltd. | Organic layer deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
US9249493B2 (en) | 2011-05-25 | 2016-02-02 | Samsung Display Co., Ltd. | Organic layer deposition apparatus and method of manufacturing organic light-emitting display apparatus by using the same |
US8906731B2 (en) | 2011-05-27 | 2014-12-09 | Samsung Display Co., Ltd. | Patterning slit sheet assembly, organic layer deposition apparatus, method of manufacturing organic light-emitting display apparatus, and the organic light-emitting display apparatus |
US8951610B2 (en) | 2011-07-04 | 2015-02-10 | Samsung Display Co., Ltd. | Organic layer deposition apparatus |
KR20140017100A (ko) * | 2012-07-30 | 2014-02-11 | 주식회사 원익아이피에스 | 셔틀 및 그를 가지는 기판처리장치 |
KR101877338B1 (ko) * | 2012-07-30 | 2018-08-09 | 주식회사 원익아이피에스 | 셔틀 및 그를 가지는 기판처리장치 |
KR20140017088A (ko) * | 2012-07-30 | 2014-02-11 | 주식회사 원익아이피에스 | 셔틀 및 그를 가지는 기판처리장치 |
KR101898062B1 (ko) * | 2012-07-30 | 2018-09-12 | 주식회사 원익아이피에스 | 셔틀 및 그를 가지는 기판처리장치 |
KR101868461B1 (ko) * | 2012-09-20 | 2018-07-23 | 주식회사 원익아이피에스 | 기판처리장치의 셔틀 및 기판처리장치 |
KR20140038593A (ko) * | 2012-09-20 | 2014-03-31 | 주식회사 원익아이피에스 | 기판처리장치의 셔틀 및 기판처리장치 |
US8945979B2 (en) | 2012-11-09 | 2015-02-03 | Samsung Display Co., Ltd. | Organic layer deposition apparatus, method of manufacturing organic light-emitting display apparatus by using the same, and organic light-emitting display apparatus manufactured by the method |
US9136476B2 (en) | 2013-03-20 | 2015-09-15 | Samsung Display Co., Ltd. | Method of manufacturing organic light-emitting display apparatus, and organic light-emitting display apparatus manufactured by the method |
KR20140120738A (ko) * | 2013-04-04 | 2014-10-14 | 삼성디스플레이 주식회사 | 디스플레이 제조방법 및 이에 사용될 수 있는 증착장치 |
KR102073765B1 (ko) * | 2013-04-04 | 2020-02-26 | 삼성디스플레이 주식회사 | 디스플레이 제조방법 및 이에 사용될 수 있는 증착장치 |
US8962360B2 (en) | 2013-06-17 | 2015-02-24 | Samsung Display Co., Ltd. | Organic layer deposition apparatus and method of manufacturing organic light-emitting display device by using the organic layer deposition apparatus |
US9040313B2 (en) | 2013-06-17 | 2015-05-26 | Samsung Display Co., Ltd. | Method of manufacturing organic light emitting display device using organic layer deposition apparatus |
JP2020063465A (ja) * | 2018-10-15 | 2020-04-23 | キヤノントッキ株式会社 | 成膜装置、製造システム、有機elパネルの製造システム、及び成膜方法 |
JP2020180327A (ja) * | 2019-04-24 | 2020-11-05 | キヤノン株式会社 | 基板処理装置および基板処理方法 |
JP7292948B2 (ja) | 2019-04-24 | 2023-06-19 | キヤノン株式会社 | 基板処理装置および基板処理方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100239746A1 (en) | 2010-09-23 |
US20060011136A1 (en) | 2006-01-19 |
JP4545504B2 (ja) | 2010-09-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4545504B2 (ja) | 膜形成方法、発光装置の作製方法 | |
JP4463492B2 (ja) | 製造装置 | |
US9748483B2 (en) | Deposition source and organic layer deposition apparatus including the same | |
US20190226078A1 (en) | Thin film deposition apparatus | |
US8932682B2 (en) | Method for manufacturing a light emitting device | |
KR101356096B1 (ko) | 반도체장치 및 그의 제작방법 | |
JP4493926B2 (ja) | 製造装置 | |
JP5165452B2 (ja) | 成膜方法及び発光装置の作製方法 | |
JP4526776B2 (ja) | 発光装置及び電子機器 | |
JP4789551B2 (ja) | 有機el成膜装置 | |
JP5190253B2 (ja) | 混合層の作製方法、発光装置の作製方法 | |
US20080233669A1 (en) | Method for Manufacturing Light-Emitting Device | |
JP6185498B2 (ja) | 蒸着用マスク | |
JP2010121215A (ja) | 蒸着装置および蒸着方法 | |
JP5568683B2 (ja) | 蒸着用マスク、及び当該マスクを用いた蒸着方法 | |
JP2013067867A (ja) | 容器 | |
JP2017036512A (ja) | 成膜装置 | |
WO2012108363A1 (ja) | 坩堝、蒸着装置、蒸着方法、有機エレクトロルミネッセンス表示装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070621 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070621 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20091029 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091123 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100629 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100630 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130709 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130709 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |