JP2005539402A5 - - Google Patents
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- Publication number
- JP2005539402A5 JP2005539402A5 JP2004548264A JP2004548264A JP2005539402A5 JP 2005539402 A5 JP2005539402 A5 JP 2005539402A5 JP 2004548264 A JP2004548264 A JP 2004548264A JP 2004548264 A JP2004548264 A JP 2004548264A JP 2005539402 A5 JP2005539402 A5 JP 2005539402A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nitrogen
- gate electrode
- nitrided
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 30
- 229910052757 nitrogen Inorganic materials 0.000 claims 15
- 239000004065 semiconductor Substances 0.000 claims 15
- 238000009792 diffusion process Methods 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 8
- 229910021334 nickel silicide Inorganic materials 0.000 claims 7
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims 7
- 229910052715 tantalum Inorganic materials 0.000 claims 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 229910052719 titanium Inorganic materials 0.000 claims 4
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 229910021332 silicide Inorganic materials 0.000 claims 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 3
- 229910021341 titanium silicide Inorganic materials 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 125000006850 spacer group Chemical group 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000007943 implant Substances 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/157,807 | 2002-05-31 | ||
| US10/157,807 US6873051B1 (en) | 2002-05-31 | 2002-05-31 | Nickel silicide with reduced interface roughness |
| PCT/US2003/014982 WO2004040622A2 (en) | 2002-05-31 | 2003-05-13 | Nickel silicide with reduced interface roughness |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005539402A JP2005539402A (ja) | 2005-12-22 |
| JP2005539402A5 true JP2005539402A5 (enExample) | 2006-06-29 |
| JP4866549B2 JP4866549B2 (ja) | 2012-02-01 |
Family
ID=32228405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004548264A Expired - Lifetime JP4866549B2 (ja) | 2002-05-31 | 2003-05-13 | 低減された界面粗さ（界面ラフネス）を有するニッケルシリサイド |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6873051B1 (enExample) |
| EP (1) | EP1509947B1 (enExample) |
| JP (1) | JP4866549B2 (enExample) |
| KR (1) | KR101117320B1 (enExample) |
| CN (1) | CN1333441C (enExample) |
| AU (1) | AU2003299495A1 (enExample) |
| DE (1) | DE60304225T2 (enExample) |
| TW (1) | TWI289328B (enExample) |
| WO (1) | WO2004040622A2 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6440851B1 (en) * | 1999-10-12 | 2002-08-27 | International Business Machines Corporation | Method and structure for controlling the interface roughness of cobalt disilicide |
| KR100870176B1 (ko) * | 2003-06-27 | 2008-11-25 | 삼성전자주식회사 | 니켈 합금 샐리사이드 공정, 이를 사용하여 반도체소자를제조하는 방법, 그에 의해 형성된 니켈 합금 실리사이드막및 이를 사용하여 제조된 반도체소자 |
| JP2005072264A (ja) * | 2003-08-25 | 2005-03-17 | Seiko Epson Corp | トランジスタの製造方法、トランジスタ、回路基板、電気光学装置及び電子機器 |
| US20050056881A1 (en) * | 2003-09-15 | 2005-03-17 | Yee-Chia Yeo | Dummy pattern for silicide gate electrode |
| BE1015721A3 (nl) * | 2003-10-17 | 2005-07-05 | Imec Inter Uni Micro Electr | Werkwijze voor het reduceren van de contactweerstand van de aansluitgebieden van een halfgeleiderinrichting. |
| JP3879003B2 (ja) * | 2004-02-26 | 2007-02-07 | 国立大学法人名古屋大学 | シリサイド膜の作製方法 |
| US7253125B1 (en) | 2004-04-16 | 2007-08-07 | Novellus Systems, Inc. | Method to improve mechanical strength of low-k dielectric film using modulated UV exposure |
| US7132352B1 (en) * | 2004-08-06 | 2006-11-07 | Advanced Micro Devices, Inc. | Method of eliminating source/drain junction spiking, and device produced thereby |
| JP2006060045A (ja) * | 2004-08-20 | 2006-03-02 | Toshiba Corp | 半導体装置 |
| US9659769B1 (en) * | 2004-10-22 | 2017-05-23 | Novellus Systems, Inc. | Tensile dielectric films using UV curing |
| JP2006261635A (ja) | 2005-02-21 | 2006-09-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| US8454750B1 (en) | 2005-04-26 | 2013-06-04 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
| US8889233B1 (en) | 2005-04-26 | 2014-11-18 | Novellus Systems, Inc. | Method for reducing stress in porous dielectric films |
| US8980769B1 (en) | 2005-04-26 | 2015-03-17 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
| KR100679224B1 (ko) * | 2005-11-04 | 2007-02-05 | 한국전자통신연구원 | 반도체 소자 및 그 제조방법 |
| US7608515B2 (en) * | 2006-02-14 | 2009-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diffusion layer for stressed semiconductor devices |
| JP5042517B2 (ja) * | 2006-04-10 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP4920310B2 (ja) * | 2006-05-30 | 2012-04-18 | 株式会社東芝 | 半導体装置およびその製造方法 |
| US7875935B2 (en) * | 2006-09-20 | 2011-01-25 | Nec Corporation | Semiconductor device and method for manufacturing the same |
| US8465991B2 (en) * | 2006-10-30 | 2013-06-18 | Novellus Systems, Inc. | Carbon containing low-k dielectric constant recovery using UV treatment |
| US10037905B2 (en) | 2009-11-12 | 2018-07-31 | Novellus Systems, Inc. | UV and reducing treatment for K recovery and surface clean in semiconductor processing |
| US20090004851A1 (en) * | 2007-06-29 | 2009-01-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Salicidation process using electroless plating to deposit metal and introduce dopant impurities |
| US8211510B1 (en) | 2007-08-31 | 2012-07-03 | Novellus Systems, Inc. | Cascaded cure approach to fabricate highly tensile silicon nitride films |
| DE102008035809B3 (de) * | 2008-07-31 | 2010-03-25 | Advanced Micro Devices, Inc., Sunnyvale | Technik zum Verringern der Silizidungleichmäßigkeiten in Polysiliziumgateelektroden durch eine dazwischenliegende Diffusionsblockierschicht |
| US9050623B1 (en) | 2008-09-12 | 2015-06-09 | Novellus Systems, Inc. | Progressive UV cure |
| US20110001169A1 (en) * | 2009-07-01 | 2011-01-06 | International Business Machines Corporation | Forming uniform silicide on 3d structures |
| CN102593174B (zh) * | 2011-01-18 | 2015-08-05 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
| CN102593173B (zh) * | 2011-01-18 | 2015-08-05 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
| US9607842B1 (en) * | 2015-10-02 | 2017-03-28 | Asm Ip Holding B.V. | Methods of forming metal silicides |
| US9847221B1 (en) | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
| JP7583550B2 (ja) * | 2020-08-13 | 2024-11-14 | 東京エレクトロン株式会社 | 半導体装置の電極部及びその製造方法 |
| EP4199110A4 (en) | 2021-01-14 | 2024-04-10 | Changxin Memory Technologies, Inc. | METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE AND TWO SEMICONDUCTOR STRUCTURES |
| CN112864240B (zh) * | 2021-01-14 | 2022-05-31 | 长鑫存储技术有限公司 | 半导体结构的制造方法及两种半导体结构 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62183180A (ja) * | 1986-02-07 | 1987-08-11 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US5170242A (en) * | 1989-12-04 | 1992-12-08 | Ramtron Corporation | Reaction barrier for a multilayer structure in an integrated circuit |
| US5545575A (en) * | 1994-10-24 | 1996-08-13 | Motorola, Inc. | Method for manufacturing an insulated gate semiconductor device |
| US5545574A (en) | 1995-05-19 | 1996-08-13 | Motorola, Inc. | Process for forming a semiconductor device having a metal-semiconductor compound |
| JPH098297A (ja) | 1995-06-26 | 1997-01-10 | Mitsubishi Electric Corp | 半導体装置、その製造方法及び電界効果トランジスタ |
| US5648287A (en) * | 1996-10-11 | 1997-07-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of salicidation for deep quarter micron LDD MOSFET devices |
| US6180469B1 (en) * | 1998-11-06 | 2001-01-30 | Advanced Micro Devices, Inc. | Low resistance salicide technology with reduced silicon consumption |
| US5970370A (en) * | 1998-12-08 | 1999-10-19 | Advanced Micro Devices | Manufacturing capping layer for the fabrication of cobalt salicide structures |
| JP2000307110A (ja) * | 1999-04-23 | 2000-11-02 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
| US6228730B1 (en) * | 1999-04-28 | 2001-05-08 | United Microelectronics Corp. | Method of fabricating field effect transistor |
| US6281102B1 (en) * | 2000-01-13 | 2001-08-28 | Integrated Device Technology, Inc. | Cobalt silicide structure for improving gate oxide integrity and method for fabricating same |
| US6465349B1 (en) * | 2000-10-05 | 2002-10-15 | Advanced Micro Devices, Ins. | Nitrogen-plasma treatment for reduced nickel silicide bridging |
| US6483154B1 (en) * | 2000-10-05 | 2002-11-19 | Advanced Micro Devices, Inc. | Nitrogen oxide plasma treatment for reduced nickel silicide bridging |
| US6602754B1 (en) * | 2001-02-02 | 2003-08-05 | Advanced Micro Devices, Inc. | Nitrogen implant into nitride spacer to reduce nickel silicide formation on spacer |
| US6432805B1 (en) * | 2001-02-15 | 2002-08-13 | Advanced Micro Devices, Inc. | Co-deposition of nitrogen and metal for metal silicide formation |
| US6339021B1 (en) * | 2001-05-09 | 2002-01-15 | Chartered Semiconductor Manufacturing Ltd. | Methods for effective nickel silicide formation |
| US6495460B1 (en) * | 2001-07-11 | 2002-12-17 | Advanced Micro Devices, Inc. | Dual layer silicide formation using a titanium barrier to reduce surface roughness at silicide/junction interface |
-
2002
- 2002-05-31 US US10/157,807 patent/US6873051B1/en not_active Expired - Lifetime
-
2003
- 2003-05-13 AU AU2003299495A patent/AU2003299495A1/en not_active Abandoned
- 2003-05-13 KR KR1020047019537A patent/KR101117320B1/ko not_active Expired - Fee Related
- 2003-05-13 JP JP2004548264A patent/JP4866549B2/ja not_active Expired - Lifetime
- 2003-05-13 CN CNB038118122A patent/CN1333441C/zh not_active Expired - Lifetime
- 2003-05-13 DE DE60304225T patent/DE60304225T2/de not_active Expired - Lifetime
- 2003-05-13 WO PCT/US2003/014982 patent/WO2004040622A2/en not_active Ceased
- 2003-05-13 EP EP03799782A patent/EP1509947B1/en not_active Expired - Lifetime
- 2003-05-19 TW TW092113429A patent/TWI289328B/zh not_active IP Right Cessation
-
2005
- 2005-01-26 US US11/042,194 patent/US6967160B1/en not_active Expired - Lifetime
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