DE60304225T2 - NIickelsilizid mit verminderter Grenzflächenrauhigkeit - Google Patents
NIickelsilizid mit verminderter Grenzflächenrauhigkeit Download PDFInfo
- Publication number
- DE60304225T2 DE60304225T2 DE60304225T DE60304225T DE60304225T2 DE 60304225 T2 DE60304225 T2 DE 60304225T2 DE 60304225 T DE60304225 T DE 60304225T DE 60304225 T DE60304225 T DE 60304225T DE 60304225 T2 DE60304225 T2 DE 60304225T2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- nitrogen
- gate electrode
- angstroms
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021334 nickel silicide Inorganic materials 0.000 title claims description 47
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 title claims description 46
- 230000003746 surface roughness Effects 0.000 title description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 64
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 37
- 229910052759 nickel Inorganic materials 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 238000009792 diffusion process Methods 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- 125000006850 spacer group Chemical group 0.000 claims description 18
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 17
- 229910052715 tantalum Inorganic materials 0.000 claims description 16
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910021332 silicide Inorganic materials 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 6
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims description 2
- -1 nitrogen ions Chemical class 0.000 claims 3
- 238000000137 annealing Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- 230000008901 benefit Effects 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 229910005881 NiSi 2 Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000035515 penetration Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/157,807 US6873051B1 (en) | 2002-05-31 | 2002-05-31 | Nickel silicide with reduced interface roughness |
| US157807 | 2002-05-31 | ||
| PCT/US2003/014982 WO2004040622A2 (en) | 2002-05-31 | 2003-05-13 | Nickel silicide with reduced interface roughness |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60304225D1 DE60304225D1 (de) | 2006-05-11 |
| DE60304225T2 true DE60304225T2 (de) | 2006-12-14 |
Family
ID=32228405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60304225T Expired - Lifetime DE60304225T2 (de) | 2002-05-31 | 2003-05-13 | NIickelsilizid mit verminderter Grenzflächenrauhigkeit |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6873051B1 (enExample) |
| EP (1) | EP1509947B1 (enExample) |
| JP (1) | JP4866549B2 (enExample) |
| KR (1) | KR101117320B1 (enExample) |
| CN (1) | CN1333441C (enExample) |
| AU (1) | AU2003299495A1 (enExample) |
| DE (1) | DE60304225T2 (enExample) |
| TW (1) | TWI289328B (enExample) |
| WO (1) | WO2004040622A2 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6440851B1 (en) * | 1999-10-12 | 2002-08-27 | International Business Machines Corporation | Method and structure for controlling the interface roughness of cobalt disilicide |
| KR100870176B1 (ko) * | 2003-06-27 | 2008-11-25 | 삼성전자주식회사 | 니켈 합금 샐리사이드 공정, 이를 사용하여 반도체소자를제조하는 방법, 그에 의해 형성된 니켈 합금 실리사이드막및 이를 사용하여 제조된 반도체소자 |
| JP2005072264A (ja) * | 2003-08-25 | 2005-03-17 | Seiko Epson Corp | トランジスタの製造方法、トランジスタ、回路基板、電気光学装置及び電子機器 |
| US20050056881A1 (en) * | 2003-09-15 | 2005-03-17 | Yee-Chia Yeo | Dummy pattern for silicide gate electrode |
| BE1015721A3 (nl) * | 2003-10-17 | 2005-07-05 | Imec Inter Uni Micro Electr | Werkwijze voor het reduceren van de contactweerstand van de aansluitgebieden van een halfgeleiderinrichting. |
| JP3879003B2 (ja) * | 2004-02-26 | 2007-02-07 | 国立大学法人名古屋大学 | シリサイド膜の作製方法 |
| US7253125B1 (en) | 2004-04-16 | 2007-08-07 | Novellus Systems, Inc. | Method to improve mechanical strength of low-k dielectric film using modulated UV exposure |
| US7132352B1 (en) * | 2004-08-06 | 2006-11-07 | Advanced Micro Devices, Inc. | Method of eliminating source/drain junction spiking, and device produced thereby |
| JP2006060045A (ja) * | 2004-08-20 | 2006-03-02 | Toshiba Corp | 半導体装置 |
| US9659769B1 (en) * | 2004-10-22 | 2017-05-23 | Novellus Systems, Inc. | Tensile dielectric films using UV curing |
| JP2006261635A (ja) | 2005-02-21 | 2006-09-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| US8980769B1 (en) | 2005-04-26 | 2015-03-17 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
| US8454750B1 (en) | 2005-04-26 | 2013-06-04 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
| US8889233B1 (en) | 2005-04-26 | 2014-11-18 | Novellus Systems, Inc. | Method for reducing stress in porous dielectric films |
| KR100679224B1 (ko) * | 2005-11-04 | 2007-02-05 | 한국전자통신연구원 | 반도체 소자 및 그 제조방법 |
| US7608515B2 (en) * | 2006-02-14 | 2009-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diffusion layer for stressed semiconductor devices |
| JP5042517B2 (ja) * | 2006-04-10 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP4920310B2 (ja) * | 2006-05-30 | 2012-04-18 | 株式会社東芝 | 半導体装置およびその製造方法 |
| WO2008035490A1 (en) * | 2006-09-20 | 2008-03-27 | Nec Corporation | Semiconductor device and method for manufacturing same |
| US10037905B2 (en) | 2009-11-12 | 2018-07-31 | Novellus Systems, Inc. | UV and reducing treatment for K recovery and surface clean in semiconductor processing |
| US8465991B2 (en) * | 2006-10-30 | 2013-06-18 | Novellus Systems, Inc. | Carbon containing low-k dielectric constant recovery using UV treatment |
| US20090004851A1 (en) * | 2007-06-29 | 2009-01-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Salicidation process using electroless plating to deposit metal and introduce dopant impurities |
| US8211510B1 (en) | 2007-08-31 | 2012-07-03 | Novellus Systems, Inc. | Cascaded cure approach to fabricate highly tensile silicon nitride films |
| DE102008035809B3 (de) * | 2008-07-31 | 2010-03-25 | Advanced Micro Devices, Inc., Sunnyvale | Technik zum Verringern der Silizidungleichmäßigkeiten in Polysiliziumgateelektroden durch eine dazwischenliegende Diffusionsblockierschicht |
| US9050623B1 (en) | 2008-09-12 | 2015-06-09 | Novellus Systems, Inc. | Progressive UV cure |
| US20110001169A1 (en) * | 2009-07-01 | 2011-01-06 | International Business Machines Corporation | Forming uniform silicide on 3d structures |
| CN102593174B (zh) * | 2011-01-18 | 2015-08-05 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
| CN102593173B (zh) * | 2011-01-18 | 2015-08-05 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
| US9607842B1 (en) * | 2015-10-02 | 2017-03-28 | Asm Ip Holding B.V. | Methods of forming metal silicides |
| US9847221B1 (en) | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
| JP7583550B2 (ja) * | 2020-08-13 | 2024-11-14 | 東京エレクトロン株式会社 | 半導体装置の電極部及びその製造方法 |
| CN112864240B (zh) * | 2021-01-14 | 2022-05-31 | 长鑫存储技术有限公司 | 半导体结构的制造方法及两种半导体结构 |
| EP4199110A4 (en) | 2021-01-14 | 2024-04-10 | Changxin Memory Technologies, Inc. | METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE AND TWO SEMICONDUCTOR STRUCTURES |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62183180A (ja) * | 1986-02-07 | 1987-08-11 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US5170242A (en) * | 1989-12-04 | 1992-12-08 | Ramtron Corporation | Reaction barrier for a multilayer structure in an integrated circuit |
| US5545575A (en) * | 1994-10-24 | 1996-08-13 | Motorola, Inc. | Method for manufacturing an insulated gate semiconductor device |
| US5545574A (en) | 1995-05-19 | 1996-08-13 | Motorola, Inc. | Process for forming a semiconductor device having a metal-semiconductor compound |
| JPH098297A (ja) | 1995-06-26 | 1997-01-10 | Mitsubishi Electric Corp | 半導体装置、その製造方法及び電界効果トランジスタ |
| US5648287A (en) * | 1996-10-11 | 1997-07-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of salicidation for deep quarter micron LDD MOSFET devices |
| US6180469B1 (en) * | 1998-11-06 | 2001-01-30 | Advanced Micro Devices, Inc. | Low resistance salicide technology with reduced silicon consumption |
| US5970370A (en) * | 1998-12-08 | 1999-10-19 | Advanced Micro Devices | Manufacturing capping layer for the fabrication of cobalt salicide structures |
| JP2000307110A (ja) * | 1999-04-23 | 2000-11-02 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
| US6228730B1 (en) * | 1999-04-28 | 2001-05-08 | United Microelectronics Corp. | Method of fabricating field effect transistor |
| US6281102B1 (en) * | 2000-01-13 | 2001-08-28 | Integrated Device Technology, Inc. | Cobalt silicide structure for improving gate oxide integrity and method for fabricating same |
| US6465349B1 (en) * | 2000-10-05 | 2002-10-15 | Advanced Micro Devices, Ins. | Nitrogen-plasma treatment for reduced nickel silicide bridging |
| US6483154B1 (en) * | 2000-10-05 | 2002-11-19 | Advanced Micro Devices, Inc. | Nitrogen oxide plasma treatment for reduced nickel silicide bridging |
| US6602754B1 (en) * | 2001-02-02 | 2003-08-05 | Advanced Micro Devices, Inc. | Nitrogen implant into nitride spacer to reduce nickel silicide formation on spacer |
| US6432805B1 (en) * | 2001-02-15 | 2002-08-13 | Advanced Micro Devices, Inc. | Co-deposition of nitrogen and metal for metal silicide formation |
| US6339021B1 (en) * | 2001-05-09 | 2002-01-15 | Chartered Semiconductor Manufacturing Ltd. | Methods for effective nickel silicide formation |
| US6495460B1 (en) * | 2001-07-11 | 2002-12-17 | Advanced Micro Devices, Inc. | Dual layer silicide formation using a titanium barrier to reduce surface roughness at silicide/junction interface |
-
2002
- 2002-05-31 US US10/157,807 patent/US6873051B1/en not_active Expired - Lifetime
-
2003
- 2003-05-13 JP JP2004548264A patent/JP4866549B2/ja not_active Expired - Lifetime
- 2003-05-13 DE DE60304225T patent/DE60304225T2/de not_active Expired - Lifetime
- 2003-05-13 EP EP03799782A patent/EP1509947B1/en not_active Expired - Lifetime
- 2003-05-13 KR KR1020047019537A patent/KR101117320B1/ko not_active Expired - Fee Related
- 2003-05-13 AU AU2003299495A patent/AU2003299495A1/en not_active Abandoned
- 2003-05-13 CN CNB038118122A patent/CN1333441C/zh not_active Expired - Lifetime
- 2003-05-13 WO PCT/US2003/014982 patent/WO2004040622A2/en not_active Ceased
- 2003-05-19 TW TW092113429A patent/TWI289328B/zh not_active IP Right Cessation
-
2005
- 2005-01-26 US US11/042,194 patent/US6967160B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1509947A2 (en) | 2005-03-02 |
| US6967160B1 (en) | 2005-11-22 |
| WO2004040622A2 (en) | 2004-05-13 |
| WO2004040622A3 (en) | 2004-07-22 |
| EP1509947B1 (en) | 2006-03-22 |
| JP4866549B2 (ja) | 2012-02-01 |
| KR101117320B1 (ko) | 2012-03-22 |
| AU2003299495A1 (en) | 2004-05-25 |
| CN1333441C (zh) | 2007-08-22 |
| AU2003299495A8 (en) | 2004-05-25 |
| TW200403731A (en) | 2004-03-01 |
| KR20050005524A (ko) | 2005-01-13 |
| DE60304225D1 (de) | 2006-05-11 |
| JP2005539402A (ja) | 2005-12-22 |
| US6873051B1 (en) | 2005-03-29 |
| CN1656605A (zh) | 2005-08-17 |
| TWI289328B (en) | 2007-11-01 |
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