JP2005522034A5 - - Google Patents

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Publication number
JP2005522034A5
JP2005522034A5 JP2003581254A JP2003581254A JP2005522034A5 JP 2005522034 A5 JP2005522034 A5 JP 2005522034A5 JP 2003581254 A JP2003581254 A JP 2003581254A JP 2003581254 A JP2003581254 A JP 2003581254A JP 2005522034 A5 JP2005522034 A5 JP 2005522034A5
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JP
Japan
Prior art keywords
substrate
ion implantation
implantation process
range
approximately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003581254A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005522034A (ja
Filing date
Publication date
Priority claimed from US10/109,096 external-priority patent/US6737332B1/en
Application filed filed Critical
Publication of JP2005522034A publication Critical patent/JP2005522034A/ja
Publication of JP2005522034A5 publication Critical patent/JP2005522034A5/ja
Pending legal-status Critical Current

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JP2003581254A 2002-03-28 2002-12-17 複数の厚みを持つ埋め込み酸化膜上に形成される半導体装置およびその製造方法 Pending JP2005522034A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/109,096 US6737332B1 (en) 2002-03-28 2002-03-28 Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making same
PCT/US2002/040213 WO2003083934A1 (en) 2002-03-28 2002-12-17 Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making same

Publications (2)

Publication Number Publication Date
JP2005522034A JP2005522034A (ja) 2005-07-21
JP2005522034A5 true JP2005522034A5 (enExample) 2006-02-09

Family

ID=28673615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003581254A Pending JP2005522034A (ja) 2002-03-28 2002-12-17 複数の厚みを持つ埋め込み酸化膜上に形成される半導体装置およびその製造方法

Country Status (8)

Country Link
US (2) US6737332B1 (enExample)
EP (1) EP1490900A1 (enExample)
JP (1) JP2005522034A (enExample)
KR (1) KR20040102052A (enExample)
CN (1) CN1310306C (enExample)
AU (1) AU2002357862A1 (enExample)
TW (1) TWI286821B (enExample)
WO (1) WO2003083934A1 (enExample)

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EP1583143B1 (en) * 2004-03-29 2011-10-05 Imec Method of fabricating self-aligned source and drain contacts in a Double gate FET with controlled manufacturing of a thin Si or non-Si channel
US8450806B2 (en) * 2004-03-31 2013-05-28 International Business Machines Corporation Method for fabricating strained silicon-on-insulator structures and strained silicon-on insulator structures formed thereby
US7382023B2 (en) * 2004-04-28 2008-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Fully depleted SOI multiple threshold voltage application
US7129138B1 (en) * 2005-04-14 2006-10-31 International Business Machines Corporation Methods of implementing and enhanced silicon-on-insulator (SOI) box structures
JP2006310661A (ja) * 2005-04-28 2006-11-09 Toshiba Corp 半導体基板および製造方法
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US20070099372A1 (en) * 2005-10-31 2007-05-03 Sailesh Chittipeddi Device having active regions of different depths
KR100724199B1 (ko) * 2005-12-28 2007-05-31 동부일렉트로닉스 주식회사 에스오아이 소자의 섀로우 트렌치 분리막 형성 방법
US8278731B2 (en) * 2007-11-20 2012-10-02 Denso Corporation Semiconductor device having SOI substrate and method for manufacturing the same
KR101024763B1 (ko) 2008-07-29 2011-03-24 주식회사 하이닉스반도체 반도체 소자의 리페어 방법
US8074897B2 (en) 2008-10-09 2011-12-13 Rain Bird Corporation Sprinkler with variable arc and flow rate
US8278167B2 (en) 2008-12-18 2012-10-02 Micron Technology, Inc. Method and structure for integrating capacitor-less memory cell with logic
US8695900B2 (en) * 2009-05-29 2014-04-15 Rain Bird Corporation Sprinkler with variable arc and flow rate and method
US8925837B2 (en) * 2009-05-29 2015-01-06 Rain Bird Corporation Sprinkler with variable arc and flow rate and method
JP2011082443A (ja) * 2009-10-09 2011-04-21 Sumco Corp エピタキシャルウェーハおよびその製造方法
US9504209B2 (en) 2010-04-09 2016-11-29 Rain Bird Corporation Irrigation sprinkler nozzle
US8421156B2 (en) * 2010-06-25 2013-04-16 International Business Machines Corporation FET with self-aligned back gate
CN102148183B (zh) * 2011-03-10 2015-04-29 上海华虹宏力半导体制造有限公司 具有阶梯型氧化埋层的soi的形成方法
US8507989B2 (en) 2011-05-16 2013-08-13 International Business Machine Corporation Extremely thin semiconductor-on-insulator (ETSOI) FET with a back gate and reduced parasitic capacitance
CN102244080A (zh) * 2011-06-28 2011-11-16 上海宏力半导体制造有限公司 绝缘体上的硅衬底结构及器件
CN102244029A (zh) * 2011-06-28 2011-11-16 上海宏力半导体制造有限公司 绝缘体上的硅衬底制作工艺及绝缘体上的硅器件制作工艺
CN102339784B (zh) * 2011-09-28 2015-02-04 上海华虹宏力半导体制造有限公司 具有阶梯型氧化埋层的soi结构的制作方法
CN102354678B (zh) * 2011-09-28 2015-03-18 上海华虹宏力半导体制造有限公司 具有阶梯型氧化埋层的soi结构
US8940569B2 (en) * 2012-10-15 2015-01-27 International Business Machines Corporation Dual-gate bio/chem sensor
CN103311301B (zh) * 2013-05-09 2016-06-29 北京大学 一种抑制辐射引起背栅泄漏电流的soi器件及其制备方法
US10128269B2 (en) * 2013-11-08 2018-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for a semiconductor structure having multiple semiconductor-device layers
CN105097711B (zh) * 2014-05-04 2018-03-30 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
JP6955489B2 (ja) * 2015-10-23 2021-10-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 先進ｃｍｐ及び凹部流れのための間隙充填膜の修正
US10204909B2 (en) * 2015-12-22 2019-02-12 Varian Semiconductor Equipment Associates, Inc. Non-uniform gate oxide thickness for DRAM device
US10322423B2 (en) 2016-11-22 2019-06-18 Rain Bird Corporation Rotary nozzle
US11154877B2 (en) 2017-03-29 2021-10-26 Rain Bird Corporation Rotary strip nozzles
CN107634101A (zh) * 2017-09-21 2018-01-26 中国工程物理研究院电子工程研究所 具有三段式埋氧层的半导体场效应晶体管及其制造方法
US11059056B2 (en) 2019-02-28 2021-07-13 Rain Bird Corporation Rotary strip nozzles and deflectors
US11406999B2 (en) 2019-05-10 2022-08-09 Rain Bird Corporation Irrigation nozzle with one or more grit vents
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