JP2009520365A5 - - Google Patents

Download PDF

Info

Publication number
JP2009520365A5
JP2009520365A5 JP2008545895A JP2008545895A JP2009520365A5 JP 2009520365 A5 JP2009520365 A5 JP 2009520365A5 JP 2008545895 A JP2008545895 A JP 2008545895A JP 2008545895 A JP2008545895 A JP 2008545895A JP 2009520365 A5 JP2009520365 A5 JP 2009520365A5
Authority
JP
Japan
Prior art keywords
region
conductivity type
implanting
gate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008545895A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009520365A (ja
Filing date
Publication date
Priority claimed from US11/304,196 external-priority patent/US7378317B2/en
Application filed filed Critical
Publication of JP2009520365A publication Critical patent/JP2009520365A/ja
Publication of JP2009520365A5 publication Critical patent/JP2009520365A5/ja
Pending legal-status Critical Current

Links

JP2008545895A 2005-12-14 2006-11-13 超接合パワーｍｏｓｆｅｔ Pending JP2009520365A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/304,196 US7378317B2 (en) 2005-12-14 2005-12-14 Superjunction power MOSFET
PCT/US2006/060826 WO2007133280A2 (en) 2005-12-14 2006-11-13 Superjunction power mosfet

Publications (2)

Publication Number Publication Date
JP2009520365A JP2009520365A (ja) 2009-05-21
JP2009520365A5 true JP2009520365A5 (enExample) 2010-01-07

Family

ID=38138431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008545895A Pending JP2009520365A (ja) 2005-12-14 2006-11-13 超接合パワーｍｏｓｆｅｔ

Country Status (5)

Country Link
US (2) US7378317B2 (enExample)
JP (1) JP2009520365A (enExample)
KR (1) KR101324855B1 (enExample)
TW (1) TWI414067B (enExample)
WO (1) WO2007133280A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7679146B2 (en) * 2006-05-30 2010-03-16 Semiconductor Components Industries, Llc Semiconductor device having sub-surface trench charge compensation regions
US7504676B2 (en) * 2006-05-31 2009-03-17 Alpha & Omega Semiconductor, Ltd. Planar split-gate high-performance MOSFET structure and manufacturing method
US7670914B2 (en) * 2006-09-28 2010-03-02 Globalfoundries Inc. Methods for fabricating multiple finger transistors
CN102299073A (zh) * 2010-06-25 2011-12-28 无锡华润上华半导体有限公司 Vdmos器件及其制作方法
TWI405271B (zh) * 2010-12-30 2013-08-11 Anpec Electronics Corp 製作具有超級介面之功率半導體元件之方法
CN102737990A (zh) * 2011-04-12 2012-10-17 北大方正集团有限公司 处理半导体器件的方法、装置和系统
JP5745974B2 (ja) * 2011-09-05 2015-07-08 三菱電機株式会社 半導体装置およびその製造方法
US8841718B2 (en) * 2012-01-16 2014-09-23 Microsemi Corporation Pseudo self aligned radhard MOSFET and process of manufacture
US8895394B2 (en) 2012-06-20 2014-11-25 Freescale Semiconductor, Inc. Trench FET with source recess etch
KR101369973B1 (ko) * 2013-03-28 2014-03-06 메이플세미컨덕터(주) 전력용 센스 모스펫 제조 방법
CN104810397B (zh) * 2014-01-26 2018-01-09 国家电网公司 一种超级结碳化硅mosfet器件及其制作方法
US9553184B2 (en) * 2014-08-29 2017-01-24 Nxp Usa, Inc. Edge termination for trench gate FET
US9397213B2 (en) 2014-08-29 2016-07-19 Freescale Semiconductor, Inc. Trench gate FET with self-aligned source contact
US9680003B2 (en) 2015-03-27 2017-06-13 Nxp Usa, Inc. Trench MOSFET shield poly contact
CN106298892A (zh) * 2015-05-27 2017-01-04 北大方正集团有限公司 Vdmos器件的制作方法
CN107545076A (zh) * 2016-06-23 2018-01-05 上海北京大学微电子研究院 一种超结mos器件终端仿真方法
CN112864221B (zh) * 2019-11-27 2022-04-15 苏州东微半导体股份有限公司 半导体超结功率器件

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
GB2089119A (en) 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US4585517A (en) * 1985-01-31 1986-04-29 Motorola, Inc. Reactive sputter cleaning of semiconductor wafer
JPH0324737A (ja) * 1989-06-22 1991-02-01 Nissan Motor Co Ltd 半導体装置およびその製造方法
CN1019720B (zh) 1991-03-19 1992-12-30 电子科技大学 半导体功率器件
JP3161767B2 (ja) * 1991-08-13 2001-04-25 沖電気工業株式会社 半導体素子の製造方法
JPH05160407A (ja) * 1991-12-09 1993-06-25 Nippondenso Co Ltd 縦型絶縁ゲート型半導体装置およびその製造方法
JP3259330B2 (ja) * 1992-06-19 2002-02-25 株式会社日立製作所 半導体装置の製造方法
DE4309764C2 (de) 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
US6297856B1 (en) * 1994-11-30 2001-10-02 Canon Kabushiki Kaisha Apparatus and system for reading data from a dynamic image data file
JP3406949B2 (ja) 1995-01-31 2003-05-19 キヤノン株式会社 半導体集積回路装置
KR0143459B1 (ko) * 1995-05-22 1998-07-01 한민구 모오스 게이트형 전력 트랜지스터
GB2309336B (en) 1996-01-22 2001-05-23 Fuji Electric Co Ltd Semiconductor device
US6291856B1 (en) 1998-11-12 2001-09-18 Fuji Electric Co., Ltd. Semiconductor device with alternating conductivity type layer and method of manufacturing the same
JP3436220B2 (ja) * 1999-12-08 2003-08-11 株式会社豊田中央研究所 縦型半導体装置
JP4764987B2 (ja) 2000-09-05 2011-09-07 富士電機株式会社 超接合半導体素子
JP5011612B2 (ja) 2000-10-31 2012-08-29 富士電機株式会社 半導体装置
GB2373634B (en) * 2000-10-31 2004-12-08 Fuji Electric Co Ltd Semiconductor device
JP5023423B2 (ja) * 2001-09-27 2012-09-12 サンケン電気株式会社 縦型絶縁ゲート型電界効果トランジスタおよびその製造方法
JP3906105B2 (ja) * 2002-03-29 2007-04-18 株式会社東芝 半導体装置
JP2004153037A (ja) * 2002-10-31 2004-05-27 Renesas Technology Corp 半導体装置の製造方法

Similar Documents

Publication Publication Date Title
JP2009520365A5 (enExample)
JP2005522034A5 (enExample)
JP2003046079A5 (ja) 半導体装置の製造方法
TWI456759B (zh) 具有被動閘極之電晶體及製造其之方法
JP2007514316A5 (enExample)
JP2007053343A5 (enExample)
JP4443008B2 (ja) 半導体装置及びその製造方法
JP2002198529A5 (enExample)
JP2006502581A5 (enExample)
JP2006186303A5 (enExample)
JP2006510206A5 (enExample)
JP2008177606A5 (enExample)
JP2005521264A5 (enExample)
TW200514264A (en) High performance semiconductor devices fabrication with strain-induced process and methods for making same
JP2010186989A5 (enExample)
CN107919324A (zh) 半导体器件的形成方法
JP2009054999A5 (enExample)
JP2005109389A5 (enExample)
JP2001044421A5 (enExample)
JP2009521131A5 (enExample)
JPH11243150A5 (enExample)
JP2007005575A5 (enExample)
TW461092B (en) Masked ROM and manufacturing process therefor
TW200616226A (en) Semiconductor device and manufacturing method for the same
TW550799B (en) Flash memory cell fabrication sequence