JP2009520365A - 超接合パワーｍｏｓｆｅｔ - Google Patents

超接合パワーｍｏｓｆｅｔ Download PDF

Info

Publication number
JP2009520365A
JP2009520365A JP2008545895A JP2008545895A JP2009520365A JP 2009520365 A JP2009520365 A JP 2009520365A JP 2008545895 A JP2008545895 A JP 2008545895A JP 2008545895 A JP2008545895 A JP 2008545895A JP 2009520365 A JP2009520365 A JP 2009520365A
Authority
JP
Japan
Prior art keywords
region
regions
conductivity type
forming
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008545895A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009520365A5 (enExample
Inventor
デ・フレサート，エドワード・ディー
バイアード，ロバート・ダブリュー
クイン，ガンミング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
NXP USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2009520365A publication Critical patent/JP2009520365A/ja
Publication of JP2009520365A5 publication Critical patent/JP2009520365A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0293—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using formation of insulating sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2008545895A 2005-12-14 2006-11-13 超接合パワーｍｏｓｆｅｔ Pending JP2009520365A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/304,196 US7378317B2 (en) 2005-12-14 2005-12-14 Superjunction power MOSFET
PCT/US2006/060826 WO2007133280A2 (en) 2005-12-14 2006-11-13 Superjunction power mosfet

Publications (2)

Publication Number Publication Date
JP2009520365A true JP2009520365A (ja) 2009-05-21
JP2009520365A5 JP2009520365A5 (enExample) 2010-01-07

Family

ID=38138431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008545895A Pending JP2009520365A (ja) 2005-12-14 2006-11-13 超接合パワーｍｏｓｆｅｔ

Country Status (5)

Country Link
US (2) US7378317B2 (enExample)
JP (1) JP2009520365A (enExample)
KR (1) KR101324855B1 (enExample)
TW (1) TWI414067B (enExample)
WO (1) WO2007133280A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055214A (ja) * 2011-09-05 2013-03-21 Mitsubishi Electric Corp 半導体装置およびその製造方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7679146B2 (en) * 2006-05-30 2010-03-16 Semiconductor Components Industries, Llc Semiconductor device having sub-surface trench charge compensation regions
US7504676B2 (en) * 2006-05-31 2009-03-17 Alpha & Omega Semiconductor, Ltd. Planar split-gate high-performance MOSFET structure and manufacturing method
US7670914B2 (en) * 2006-09-28 2010-03-02 Globalfoundries Inc. Methods for fabricating multiple finger transistors
CN102299073A (zh) * 2010-06-25 2011-12-28 无锡华润上华半导体有限公司 Vdmos器件及其制作方法
TWI405271B (zh) * 2010-12-30 2013-08-11 Anpec Electronics Corp 製作具有超級介面之功率半導體元件之方法
CN102737990A (zh) * 2011-04-12 2012-10-17 北大方正集团有限公司 处理半导体器件的方法、装置和系统
US8841718B2 (en) * 2012-01-16 2014-09-23 Microsemi Corporation Pseudo self aligned radhard MOSFET and process of manufacture
US8895394B2 (en) 2012-06-20 2014-11-25 Freescale Semiconductor, Inc. Trench FET with source recess etch
KR101369973B1 (ko) * 2013-03-28 2014-03-06 메이플세미컨덕터(주) 전력용 센스 모스펫 제조 방법
CN104810397B (zh) * 2014-01-26 2018-01-09 国家电网公司 一种超级结碳化硅mosfet器件及其制作方法
US9397213B2 (en) 2014-08-29 2016-07-19 Freescale Semiconductor, Inc. Trench gate FET with self-aligned source contact
US9553184B2 (en) * 2014-08-29 2017-01-24 Nxp Usa, Inc. Edge termination for trench gate FET
US9680003B2 (en) 2015-03-27 2017-06-13 Nxp Usa, Inc. Trench MOSFET shield poly contact
CN106298892A (zh) * 2015-05-27 2017-01-04 北大方正集团有限公司 Vdmos器件的制作方法
CN107545076A (zh) * 2016-06-23 2018-01-05 上海北京大学微电子研究院 一种超结mos器件终端仿真方法
CN112864221B (zh) * 2019-11-27 2022-04-15 苏州东微半导体股份有限公司 半导体超结功率器件
CN116137283B (zh) * 2021-11-17 2025-09-12 苏州东微半导体股份有限公司 半导体超结功率器件

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0324737A (ja) * 1989-06-22 1991-02-01 Nissan Motor Co Ltd 半導体装置およびその製造方法
JPH0548110A (ja) * 1991-08-13 1993-02-26 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPH05160407A (ja) * 1991-12-09 1993-06-25 Nippondenso Co Ltd 縦型絶縁ゲート型半導体装置およびその製造方法
JPH065867A (ja) * 1992-06-19 1994-01-14 Hitachi Ltd 半導体装置及びその製造方法
JPH08330589A (ja) * 1995-05-22 1996-12-13 Samsung Electron Co Ltd Ｍｏｓゲート形パワートランジスタ及びその製造方法
JP2001168335A (ja) * 1999-12-08 2001-06-22 Toyota Central Res & Dev Lab Inc 縦型半導体装置
JP2003101023A (ja) * 2001-09-27 2003-04-04 Sanken Electric Co Ltd 縦型絶縁ゲート型電界効果トランジスタおよびその製造方法
JP2003298052A (ja) * 2002-03-29 2003-10-17 Toshiba Corp 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
GB2089119A (en) 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US4585517A (en) * 1985-01-31 1986-04-29 Motorola, Inc. Reactive sputter cleaning of semiconductor wafer
CN1019720B (zh) 1991-03-19 1992-12-30 电子科技大学 半导体功率器件
DE4309764C2 (de) 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
US6297856B1 (en) * 1994-11-30 2001-10-02 Canon Kabushiki Kaisha Apparatus and system for reading data from a dynamic image data file
JP3406949B2 (ja) 1995-01-31 2003-05-19 キヤノン株式会社 半導体集積回路装置
GB2309336B (en) 1996-01-22 2001-05-23 Fuji Electric Co Ltd Semiconductor device
US6291856B1 (en) 1998-11-12 2001-09-18 Fuji Electric Co., Ltd. Semiconductor device with alternating conductivity type layer and method of manufacturing the same
JP4764987B2 (ja) 2000-09-05 2011-09-07 富士電機株式会社 超接合半導体素子
GB2373634B (en) * 2000-10-31 2004-12-08 Fuji Electric Co Ltd Semiconductor device
JP5011612B2 (ja) 2000-10-31 2012-08-29 富士電機株式会社 半導体装置
JP2004153037A (ja) * 2002-10-31 2004-05-27 Renesas Technology Corp 半導体装置の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0324737A (ja) * 1989-06-22 1991-02-01 Nissan Motor Co Ltd 半導体装置およびその製造方法
JPH0548110A (ja) * 1991-08-13 1993-02-26 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPH05160407A (ja) * 1991-12-09 1993-06-25 Nippondenso Co Ltd 縦型絶縁ゲート型半導体装置およびその製造方法
JPH065867A (ja) * 1992-06-19 1994-01-14 Hitachi Ltd 半導体装置及びその製造方法
JPH08330589A (ja) * 1995-05-22 1996-12-13 Samsung Electron Co Ltd Ｍｏｓゲート形パワートランジスタ及びその製造方法
JP2001168335A (ja) * 1999-12-08 2001-06-22 Toyota Central Res & Dev Lab Inc 縦型半導体装置
JP2003101023A (ja) * 2001-09-27 2003-04-04 Sanken Electric Co Ltd 縦型絶縁ゲート型電界効果トランジスタおよびその製造方法
JP2003298052A (ja) * 2002-03-29 2003-10-17 Toshiba Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055214A (ja) * 2011-09-05 2013-03-21 Mitsubishi Electric Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
KR20080084967A (ko) 2008-09-22
TWI414067B (zh) 2013-11-01
US7378317B2 (en) 2008-05-27
WO2007133280A2 (en) 2007-11-22
US20070132020A1 (en) 2007-06-14
US7602014B2 (en) 2009-10-13
WO2007133280A3 (en) 2008-04-10
TW200746418A (en) 2007-12-16
US20080197409A1 (en) 2008-08-21
KR101324855B1 (ko) 2013-11-01

Similar Documents

Publication Publication Date Title
US7602014B2 (en) Superjunction power MOSFET
CN100524809C (zh) 场效应晶体管半导体器件
KR101099907B1 (ko) 금속 산화물 반도체 장치와 그의 형성 방법 및 집적 회로
KR101632938B1 (ko) 밀봉 플러그를 구비한 반도체 트렌치 구조와 방법
CN100485961C (zh) 具有增强的屏蔽结构的金属氧化物半导体器件
US9136323B2 (en) Drain-end drift diminution in semiconductor devices
US7989886B2 (en) Alignment of trench for MOS
CN104485359B (zh) 自对准电荷平衡的功率双扩散金属氧化物半导体制备方法
KR101430820B1 (ko) 이중 게이트 횡형 ｍｏｓｆｅｔ
US8159024B2 (en) High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance
US20080265313A1 (en) Semiconductor device having enhanced performance and method
KR100592749B1 (ko) 실리콘과 실리콘 게르마늄 이종 구조를 가지는 고전압전계효과 트랜지스터 및 그 제조 방법
US20230207689A1 (en) Manufacturing method of semiconductor device and semiconductor device
KR20200054881A (ko) 초접합 및 산소 삽입된 si 층을 구비한 반도체 장치
JP2003518748A (ja) 自己整合されたシリコンカーバイトｌｍｏｓｆｅｔ
TWI829085B (zh) 的碳化矽金屬氧化物半導體場效電晶體
KR20010102278A (ko) 게이트 항복을 방지한 실리콘 탄화물 횡형 금속 산화물반도체 전계 효과 트랜지스터
CN101325217A (zh) 一种半导体结构
CN113241374A (zh) 功率晶体管结构及其制造方法
KR101063567B1 (ko) Ｍｏｓ 디바이스 및 그 제조방법
CN100502041C (zh) 半导体器件
JP5266738B2 (ja) トレンチゲート型半導体装置の製造方法
WO2007070050A1 (en) Power mosfet and method of making the same
CN118198143A (zh) 包含晶体管单元的半导体器件及其相关制备方法
CN116960179A (zh) 半导体元件结构

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091113

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20091113

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120813

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120816

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121030

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121106

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130612