TWI414067B - 超接面功率金屬氧化物半導體場效電晶體 - Google Patents
超接面功率金屬氧化物半導體場效電晶體 Download PDFInfo
- Publication number
- TWI414067B TWI414067B TW095143436A TW95143436A TWI414067B TW I414067 B TWI414067 B TW I414067B TW 095143436 A TW095143436 A TW 095143436A TW 95143436 A TW95143436 A TW 95143436A TW I414067 B TWI414067 B TW I414067B
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- doped region
- conductivity type
- gate
- type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 229910044991 metal oxide Inorganic materials 0.000 title claims description 4
- 150000004706 metal oxides Chemical class 0.000 title claims description 4
- 230000005669 field effect Effects 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000002019 doping agent Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 24
- 239000007943 implant Substances 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 15
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000002513 implantation Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 3
- 210000000746 body region Anatomy 0.000 abstract description 33
- 239000010410 layer Substances 0.000 description 89
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 11
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 230000006872 improvement Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000370 acceptor Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- MWRJCEDXZKNABM-UHFFFAOYSA-N germanium tungsten Chemical compound [Ge].[W] MWRJCEDXZKNABM-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
- H10D30/0293—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using formation of insulating sidewall spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/109—Reduced surface field [RESURF] PN junction structures
- H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/156—Drain regions of DMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/156—Drain regions of DMOS transistors
- H10D62/157—Impurity concentrations or distributions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
- H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
- H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/304,196 US7378317B2 (en) | 2005-12-14 | 2005-12-14 | Superjunction power MOSFET |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200746418A TW200746418A (en) | 2007-12-16 |
| TWI414067B true TWI414067B (zh) | 2013-11-01 |
Family
ID=38138431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095143436A TWI414067B (zh) | 2005-12-14 | 2006-11-23 | 超接面功率金屬氧化物半導體場效電晶體 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7378317B2 (enExample) |
| JP (1) | JP2009520365A (enExample) |
| KR (1) | KR101324855B1 (enExample) |
| TW (1) | TWI414067B (enExample) |
| WO (1) | WO2007133280A2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7679146B2 (en) * | 2006-05-30 | 2010-03-16 | Semiconductor Components Industries, Llc | Semiconductor device having sub-surface trench charge compensation regions |
| US7504676B2 (en) * | 2006-05-31 | 2009-03-17 | Alpha & Omega Semiconductor, Ltd. | Planar split-gate high-performance MOSFET structure and manufacturing method |
| US7670914B2 (en) * | 2006-09-28 | 2010-03-02 | Globalfoundries Inc. | Methods for fabricating multiple finger transistors |
| CN102299073A (zh) * | 2010-06-25 | 2011-12-28 | 无锡华润上华半导体有限公司 | Vdmos器件及其制作方法 |
| TWI405271B (zh) * | 2010-12-30 | 2013-08-11 | Anpec Electronics Corp | 製作具有超級介面之功率半導體元件之方法 |
| CN102737990A (zh) * | 2011-04-12 | 2012-10-17 | 北大方正集团有限公司 | 处理半导体器件的方法、装置和系统 |
| JP5745974B2 (ja) * | 2011-09-05 | 2015-07-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US8841718B2 (en) * | 2012-01-16 | 2014-09-23 | Microsemi Corporation | Pseudo self aligned radhard MOSFET and process of manufacture |
| US8895394B2 (en) | 2012-06-20 | 2014-11-25 | Freescale Semiconductor, Inc. | Trench FET with source recess etch |
| KR101369973B1 (ko) * | 2013-03-28 | 2014-03-06 | 메이플세미컨덕터(주) | 전력용 센스 모스펫 제조 방법 |
| CN104810397B (zh) * | 2014-01-26 | 2018-01-09 | 国家电网公司 | 一种超级结碳化硅mosfet器件及其制作方法 |
| US9553184B2 (en) * | 2014-08-29 | 2017-01-24 | Nxp Usa, Inc. | Edge termination for trench gate FET |
| US9397213B2 (en) | 2014-08-29 | 2016-07-19 | Freescale Semiconductor, Inc. | Trench gate FET with self-aligned source contact |
| US9680003B2 (en) | 2015-03-27 | 2017-06-13 | Nxp Usa, Inc. | Trench MOSFET shield poly contact |
| CN106298892A (zh) * | 2015-05-27 | 2017-01-04 | 北大方正集团有限公司 | Vdmos器件的制作方法 |
| CN107545076A (zh) * | 2016-06-23 | 2018-01-05 | 上海北京大学微电子研究院 | 一种超结mos器件终端仿真方法 |
| CN112864221B (zh) * | 2019-11-27 | 2022-04-15 | 苏州东微半导体股份有限公司 | 半导体超结功率器件 |
| CN116137283B (zh) * | 2021-11-17 | 2025-09-12 | 苏州东微半导体股份有限公司 | 半导体超结功率器件 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003101023A (ja) * | 2001-09-27 | 2003-04-04 | Sanken Electric Co Ltd | 縦型絶縁ゲート型電界効果トランジスタおよびその製造方法 |
| US20040113200A1 (en) * | 2000-10-31 | 2004-06-17 | Fuji Electric Co., Ltd. | Semiconductor device |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| GB2089119A (en) * | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
| US4585517A (en) * | 1985-01-31 | 1986-04-29 | Motorola, Inc. | Reactive sputter cleaning of semiconductor wafer |
| JPH0324737A (ja) * | 1989-06-22 | 1991-02-01 | Nissan Motor Co Ltd | 半導体装置およびその製造方法 |
| CN1019720B (zh) * | 1991-03-19 | 1992-12-30 | 电子科技大学 | 半导体功率器件 |
| JP3161767B2 (ja) * | 1991-08-13 | 2001-04-25 | 沖電気工業株式会社 | 半導体素子の製造方法 |
| JPH05160407A (ja) * | 1991-12-09 | 1993-06-25 | Nippondenso Co Ltd | 縦型絶縁ゲート型半導体装置およびその製造方法 |
| JP3259330B2 (ja) * | 1992-06-19 | 2002-02-25 | 株式会社日立製作所 | 半導体装置の製造方法 |
| DE4309764C2 (de) * | 1993-03-25 | 1997-01-30 | Siemens Ag | Leistungs-MOSFET |
| US6297856B1 (en) * | 1994-11-30 | 2001-10-02 | Canon Kabushiki Kaisha | Apparatus and system for reading data from a dynamic image data file |
| JP3406949B2 (ja) * | 1995-01-31 | 2003-05-19 | キヤノン株式会社 | 半導体集積回路装置 |
| KR0143459B1 (ko) * | 1995-05-22 | 1998-07-01 | 한민구 | 모오스 게이트형 전력 트랜지스터 |
| GB2309336B (en) * | 1996-01-22 | 2001-05-23 | Fuji Electric Co Ltd | Semiconductor device |
| US6291856B1 (en) * | 1998-11-12 | 2001-09-18 | Fuji Electric Co., Ltd. | Semiconductor device with alternating conductivity type layer and method of manufacturing the same |
| JP3436220B2 (ja) * | 1999-12-08 | 2003-08-11 | 株式会社豊田中央研究所 | 縦型半導体装置 |
| JP4764987B2 (ja) * | 2000-09-05 | 2011-09-07 | 富士電機株式会社 | 超接合半導体素子 |
| JP5011612B2 (ja) | 2000-10-31 | 2012-08-29 | 富士電機株式会社 | 半導体装置 |
| JP3906105B2 (ja) * | 2002-03-29 | 2007-04-18 | 株式会社東芝 | 半導体装置 |
| JP2004153037A (ja) * | 2002-10-31 | 2004-05-27 | Renesas Technology Corp | 半導体装置の製造方法 |
-
2005
- 2005-12-14 US US11/304,196 patent/US7378317B2/en not_active Expired - Fee Related
-
2006
- 2006-11-13 WO PCT/US2006/060826 patent/WO2007133280A2/en not_active Ceased
- 2006-11-13 JP JP2008545895A patent/JP2009520365A/ja active Pending
- 2006-11-13 KR KR1020087014424A patent/KR101324855B1/ko not_active Expired - Fee Related
- 2006-11-23 TW TW095143436A patent/TWI414067B/zh not_active IP Right Cessation
-
2008
- 2008-04-24 US US12/109,215 patent/US7602014B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040113200A1 (en) * | 2000-10-31 | 2004-06-17 | Fuji Electric Co., Ltd. | Semiconductor device |
| JP2003101023A (ja) * | 2001-09-27 | 2003-04-04 | Sanken Electric Co Ltd | 縦型絶縁ゲート型電界効果トランジスタおよびその製造方法 |
Non-Patent Citations (1)
| Title |
|---|
| 本案先前技術 圖1；頁8 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US20080197409A1 (en) | 2008-08-21 |
| US20070132020A1 (en) | 2007-06-14 |
| WO2007133280A3 (en) | 2008-04-10 |
| WO2007133280A2 (en) | 2007-11-22 |
| KR101324855B1 (ko) | 2013-11-01 |
| US7602014B2 (en) | 2009-10-13 |
| TW200746418A (en) | 2007-12-16 |
| KR20080084967A (ko) | 2008-09-22 |
| US7378317B2 (en) | 2008-05-27 |
| JP2009520365A (ja) | 2009-05-21 |
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