JP2005507174A5 - - Google Patents

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JP2005507174A5
JP2005507174A5 JP2003539110A JP2003539110A JP2005507174A5 JP 2005507174 A5 JP2005507174 A5 JP 2005507174A5 JP 2003539110 A JP2003539110 A JP 2003539110A JP 2003539110 A JP2003539110 A JP 2003539110A JP 2005507174 A5 JP2005507174 A5 JP 2005507174A5
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JP
Japan
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layer
silicon carbide
forming
mesfet
doped
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JP2003539110A
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Japanese (ja)
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JP2005507174A (ja
JP4921694B2 (ja
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Priority claimed from US10/136,456 external-priority patent/US6906350B2/en
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Publication of JP4921694B2 publication Critical patent/JP4921694B2/ja
Anticipated expiration legal-status Critical
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JP2003539110A 2001-10-24 2002-10-08 デルタドープされた炭化シリコン金属半導体電界効果トランジスタ、およびデルタドープされた炭化シリコン金属半導体電界効果トランジスタの製造方法 Expired - Lifetime JP4921694B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/136,456 2001-10-24
US10/136,456 US6906350B2 (en) 2001-10-24 2001-10-24 Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure
PCT/US2002/032204 WO2003036729A1 (en) 2001-10-24 2002-10-08 Delta doped silicon carbide metal-semiconductor field effect transistors and methods of fabricating them

Publications (3)

Publication Number Publication Date
JP2005507174A JP2005507174A (ja) 2005-03-10
JP2005507174A5 true JP2005507174A5 (https=) 2006-01-05
JP4921694B2 JP4921694B2 (ja) 2012-04-25

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JP2003539110A Expired - Lifetime JP4921694B2 (ja) 2001-10-24 2002-10-08 デルタドープされた炭化シリコン金属半導体電界効果トランジスタ、およびデルタドープされた炭化シリコン金属半導体電界効果トランジスタの製造方法

Country Status (11)

Country Link
US (2) US6906350B2 (https=)
EP (1) EP1459390B1 (https=)
JP (1) JP4921694B2 (https=)
KR (1) KR20040045904A (https=)
CN (1) CN100459171C (https=)
AT (1) ATE431967T1 (https=)
AU (1) AU2002334921A1 (https=)
CA (1) CA2464110A1 (https=)
DE (1) DE60232420D1 (https=)
TW (1) TW578305B (https=)
WO (1) WO2003036729A1 (https=)

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