TW578305B - Delta doped silicon carbide metal-semiconductor field effect transistors and methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure - Google Patents

Delta doped silicon carbide metal-semiconductor field effect transistors and methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure Download PDF

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Publication number
TW578305B
TW578305B TW091124508A TW91124508A TW578305B TW 578305 B TW578305 B TW 578305B TW 091124508 A TW091124508 A TW 091124508A TW 91124508 A TW91124508 A TW 91124508A TW 578305 B TW578305 B TW 578305B
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Taiwan
Prior art keywords
layer
doped
gate
silicon carbide
forming
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TW091124508A
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English (en)
Chinese (zh)
Inventor
Saptharishi Sriram
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/871—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group I-VI materials, e.g. Cu2O; being Group I-VII materials, e.g. CuI

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW091124508A 2001-10-24 2002-10-23 Delta doped silicon carbide metal-semiconductor field effect transistors and methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure TW578305B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/136,456 US6906350B2 (en) 2001-10-24 2001-10-24 Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure

Publications (1)

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TW578305B true TW578305B (en) 2004-03-01

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TW091124508A TW578305B (en) 2001-10-24 2002-10-23 Delta doped silicon carbide metal-semiconductor field effect transistors and methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure

Country Status (11)

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US (2) US6906350B2 (https=)
EP (1) EP1459390B1 (https=)
JP (1) JP4921694B2 (https=)
KR (1) KR20040045904A (https=)
CN (1) CN100459171C (https=)
AT (1) ATE431967T1 (https=)
AU (1) AU2002334921A1 (https=)
CA (1) CA2464110A1 (https=)
DE (1) DE60232420D1 (https=)
TW (1) TW578305B (https=)
WO (1) WO2003036729A1 (https=)

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Also Published As

Publication number Publication date
DE60232420D1 (de) 2009-07-02
JP2005507174A (ja) 2005-03-10
AU2002334921A1 (en) 2003-05-06
CN1706048A (zh) 2005-12-07
CA2464110A1 (en) 2003-05-01
WO2003036729A8 (en) 2004-06-24
KR20040045904A (ko) 2004-06-02
JP4921694B2 (ja) 2012-04-25
WO2003036729A1 (en) 2003-05-01
CN100459171C (zh) 2009-02-04
US20050023535A1 (en) 2005-02-03
US20030075719A1 (en) 2003-04-24
EP1459390B1 (en) 2009-05-20
ATE431967T1 (de) 2009-06-15
US6906350B2 (en) 2005-06-14
US6902964B2 (en) 2005-06-07
EP1459390A1 (en) 2004-09-22

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