DE60232420D1 - Delta-dotierte siliziumcarbid-metallhalbleiterfeldeffekttransistoren und verfahren zu ihrer herstellung - Google Patents

Delta-dotierte siliziumcarbid-metallhalbleiterfeldeffekttransistoren und verfahren zu ihrer herstellung

Info

Publication number
DE60232420D1
DE60232420D1 DE60232420T DE60232420T DE60232420D1 DE 60232420 D1 DE60232420 D1 DE 60232420D1 DE 60232420 T DE60232420 T DE 60232420T DE 60232420 T DE60232420 T DE 60232420T DE 60232420 D1 DE60232420 D1 DE 60232420D1
Authority
DE
Germany
Prior art keywords
silicon carbide
gate
semiconductor field
source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60232420T
Other languages
English (en)
Inventor
Saptharishi Sriram
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of DE60232420D1 publication Critical patent/DE60232420D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H01L29/242—AIBVI or AIBVII compounds, e.g. Cu2O, Cu I
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H01L29/365—Planar doping, e.g. atomic-plane doping, delta-doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
DE60232420T 2001-10-24 2002-10-08 Delta-dotierte siliziumcarbid-metallhalbleiterfeldeffekttransistoren und verfahren zu ihrer herstellung Expired - Lifetime DE60232420D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/136,456 US6906350B2 (en) 2001-10-24 2001-10-24 Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure
PCT/US2002/032204 WO2003036729A1 (en) 2001-10-24 2002-10-08 Delta doped silicon carbide metal-semiconductor field effect transistors and methods of fabricating them

Publications (1)

Publication Number Publication Date
DE60232420D1 true DE60232420D1 (de) 2009-07-02

Family

ID=22472931

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60232420T Expired - Lifetime DE60232420D1 (de) 2001-10-24 2002-10-08 Delta-dotierte siliziumcarbid-metallhalbleiterfeldeffekttransistoren und verfahren zu ihrer herstellung

Country Status (11)

Country Link
US (2) US6906350B2 (de)
EP (1) EP1459390B1 (de)
JP (1) JP4921694B2 (de)
KR (1) KR20040045904A (de)
CN (1) CN100459171C (de)
AT (1) ATE431967T1 (de)
AU (1) AU2002334921A1 (de)
CA (1) CA2464110A1 (de)
DE (1) DE60232420D1 (de)
TW (1) TW578305B (de)
WO (1) WO2003036729A1 (de)

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Also Published As

Publication number Publication date
EP1459390A1 (de) 2004-09-22
CN1706048A (zh) 2005-12-07
JP2005507174A (ja) 2005-03-10
CA2464110A1 (en) 2003-05-01
US6902964B2 (en) 2005-06-07
ATE431967T1 (de) 2009-06-15
AU2002334921A1 (en) 2003-05-06
CN100459171C (zh) 2009-02-04
KR20040045904A (ko) 2004-06-02
US6906350B2 (en) 2005-06-14
US20030075719A1 (en) 2003-04-24
WO2003036729A1 (en) 2003-05-01
JP4921694B2 (ja) 2012-04-25
WO2003036729A8 (en) 2004-06-24
EP1459390B1 (de) 2009-05-20
US20050023535A1 (en) 2005-02-03
TW578305B (en) 2004-03-01

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