|
US6482262B1
(en)
*
|
1959-10-10 |
2002-11-19 |
Asm Microchemistry Oy |
Deposition of transition metal carbides
|
|
FI119941B
(fi)
*
|
1999-10-15 |
2009-05-15 |
Asm Int |
Menetelmä nanolaminaattien valmistamiseksi
|
|
US6974766B1
(en)
|
1998-10-01 |
2005-12-13 |
Applied Materials, Inc. |
In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
|
|
JP2002536549A
(ja)
*
|
1999-02-12 |
2002-10-29 |
ゲレスト インコーポレイテッド |
窒化タングステンの化学蒸着
|
|
US6902763B1
(en)
|
1999-10-15 |
2005-06-07 |
Asm International N.V. |
Method for depositing nanolaminate thin films on sensitive surfaces
|
|
FI20000099A0
(fi)
|
2000-01-18 |
2000-01-18 |
Asm Microchemistry Ltd |
Menetelmä metalliohutkalvojen kasvattamiseksi
|
|
US6620723B1
(en)
|
2000-06-27 |
2003-09-16 |
Applied Materials, Inc. |
Formation of boride barrier layers using chemisorption techniques
|
|
US7405158B2
(en)
|
2000-06-28 |
2008-07-29 |
Applied Materials, Inc. |
Methods for depositing tungsten layers employing atomic layer deposition techniques
|
|
US7101795B1
(en)
|
2000-06-28 |
2006-09-05 |
Applied Materials, Inc. |
Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
|
|
US7964505B2
(en)
|
2005-01-19 |
2011-06-21 |
Applied Materials, Inc. |
Atomic layer deposition of tungsten materials
|
|
US6936538B2
(en)
|
2001-07-16 |
2005-08-30 |
Applied Materials, Inc. |
Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
|
|
US6551929B1
(en)
|
2000-06-28 |
2003-04-22 |
Applied Materials, Inc. |
Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
|
|
US7732327B2
(en)
|
2000-06-28 |
2010-06-08 |
Applied Materials, Inc. |
Vapor deposition of tungsten materials
|
|
US9076843B2
(en)
|
2001-05-22 |
2015-07-07 |
Novellus Systems, Inc. |
Method for producing ultra-thin tungsten layers with improved step coverage
|
|
US7589017B2
(en)
*
|
2001-05-22 |
2009-09-15 |
Novellus Systems, Inc. |
Methods for growing low-resistivity tungsten film
|
|
US7262125B2
(en)
*
|
2001-05-22 |
2007-08-28 |
Novellus Systems, Inc. |
Method of forming low-resistivity tungsten interconnects
|
|
US7005372B2
(en)
*
|
2003-01-21 |
2006-02-28 |
Novellus Systems, Inc. |
Deposition of tungsten nitride
|
|
US7141494B2
(en)
*
|
2001-05-22 |
2006-11-28 |
Novellus Systems, Inc. |
Method for reducing tungsten film roughness and improving step coverage
|
|
US7955972B2
(en)
*
|
2001-05-22 |
2011-06-07 |
Novellus Systems, Inc. |
Methods for growing low-resistivity tungsten for high aspect ratio and small features
|
|
US6849545B2
(en)
|
2001-06-20 |
2005-02-01 |
Applied Materials, Inc. |
System and method to form a composite film stack utilizing sequential deposition techniques
|
|
US7211144B2
(en)
|
2001-07-13 |
2007-05-01 |
Applied Materials, Inc. |
Pulsed nucleation deposition of tungsten layers
|
|
WO2003029515A2
(en)
*
|
2001-07-16 |
2003-04-10 |
Applied Materials, Inc. |
Formation of composite tungsten films
|
|
US20090004850A1
(en)
|
2001-07-25 |
2009-01-01 |
Seshadri Ganguli |
Process for forming cobalt and cobalt silicide materials in tungsten contact applications
|
|
US20030029715A1
(en)
|
2001-07-25 |
2003-02-13 |
Applied Materials, Inc. |
An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
|
|
US8110489B2
(en)
|
2001-07-25 |
2012-02-07 |
Applied Materials, Inc. |
Process for forming cobalt-containing materials
|
|
US9051641B2
(en)
|
2001-07-25 |
2015-06-09 |
Applied Materials, Inc. |
Cobalt deposition on barrier surfaces
|
|
JP2005504885A
(ja)
|
2001-07-25 |
2005-02-17 |
アプライド マテリアルズ インコーポレイテッド |
新規なスパッタ堆積方法を使用したバリア形成
|
|
JP4938962B2
(ja)
|
2001-09-14 |
2012-05-23 |
エーエスエム インターナショナル エヌ.ヴェー. |
ゲッタリング反応物を用いるaldによる金属窒化物堆積
|
|
US6936906B2
(en)
|
2001-09-26 |
2005-08-30 |
Applied Materials, Inc. |
Integration of barrier layer and seed layer
|
|
US7049226B2
(en)
|
2001-09-26 |
2006-05-23 |
Applied Materials, Inc. |
Integration of ALD tantalum nitride for copper metallization
|
|
TW589684B
(en)
*
|
2001-10-10 |
2004-06-01 |
Applied Materials Inc |
Method for depositing refractory metal layers employing sequential deposition techniques
|
|
US6916398B2
(en)
|
2001-10-26 |
2005-07-12 |
Applied Materials, Inc. |
Gas delivery apparatus and method for atomic layer deposition
|
|
US7780785B2
(en)
|
2001-10-26 |
2010-08-24 |
Applied Materials, Inc. |
Gas delivery apparatus for atomic layer deposition
|
|
US6911391B2
(en)
|
2002-01-26 |
2005-06-28 |
Applied Materials, Inc. |
Integration of titanium and titanium nitride layers
|
|
US6833161B2
(en)
|
2002-02-26 |
2004-12-21 |
Applied Materials, Inc. |
Cyclical deposition of tungsten nitride for metal oxide gate electrode
|
|
US7439191B2
(en)
*
|
2002-04-05 |
2008-10-21 |
Applied Materials, Inc. |
Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
|
|
US7279432B2
(en)
|
2002-04-16 |
2007-10-09 |
Applied Materials, Inc. |
System and method for forming an integrated barrier layer
|
|
US6838125B2
(en)
*
|
2002-07-10 |
2005-01-04 |
Applied Materials, Inc. |
Method of film deposition using activated precursor gases
|
|
US7153542B2
(en)
*
|
2002-08-06 |
2006-12-26 |
Tegal Corporation |
Assembly line processing method
|
|
US7398090B2
(en)
*
|
2002-09-13 |
2008-07-08 |
Hewlett-Packard Development Company, L.P. |
Defining a smart area
|
|
US6888755B2
(en)
|
2002-10-28 |
2005-05-03 |
Sandisk Corporation |
Flash memory cell arrays having dual control gates per memory cell charge storage element
|
|
JP4031704B2
(ja)
|
2002-12-18 |
2008-01-09 |
東京エレクトロン株式会社 |
成膜方法
|
|
US7262133B2
(en)
*
|
2003-01-07 |
2007-08-28 |
Applied Materials, Inc. |
Enhancement of copper line reliability using thin ALD tan film to cap the copper line
|
|
US6703296B1
(en)
*
|
2003-04-17 |
2004-03-09 |
Macronix International Co. Ltd. |
Method for forming metal salicide
|
|
US6844258B1
(en)
|
2003-05-09 |
2005-01-18 |
Novellus Systems, Inc. |
Selective refractory metal and nitride capping
|
|
WO2004113585A2
(en)
|
2003-06-18 |
2004-12-29 |
Applied Materials, Inc. |
Atomic layer deposition of barrier materials
|
|
TW200508413A
(en)
*
|
2003-08-06 |
2005-03-01 |
Ulvac Inc |
Device and method for manufacturing thin films
|
|
US7754604B2
(en)
*
|
2003-08-26 |
2010-07-13 |
Novellus Systems, Inc. |
Reducing silicon attack and improving resistivity of tungsten nitride film
|
|
US20050069641A1
(en)
*
|
2003-09-30 |
2005-03-31 |
Tokyo Electron Limited |
Method for depositing metal layers using sequential flow deposition
|
|
US6924223B2
(en)
*
|
2003-09-30 |
2005-08-02 |
Tokyo Electron Limited |
Method of forming a metal layer using an intermittent precursor gas flow process
|
|
US7405143B2
(en)
|
2004-03-25 |
2008-07-29 |
Asm International N.V. |
Method for fabricating a seed layer
|
|
US7410864B2
(en)
*
|
2004-04-23 |
2008-08-12 |
Infineon Technologies Ag |
Trench and a trench capacitor and method for forming the same
|
|
KR100578221B1
(ko)
*
|
2004-05-06 |
2006-05-12 |
주식회사 하이닉스반도체 |
확산방지막을 구비하는 반도체소자의 제조 방법
|
|
WO2007001301A2
(en)
*
|
2004-06-28 |
2007-01-04 |
Cambridge Nanotech Inc. |
Atomic layer deposition (ald) system and method
|
|
KR100550346B1
(ko)
*
|
2004-08-24 |
2006-02-08 |
삼성전자주식회사 |
반도체 장치와 그의 제조 방법 및 이를 이용한 트랜치소자 분리막의 제조 방법
|
|
KR100615093B1
(ko)
*
|
2004-08-24 |
2006-08-22 |
삼성전자주식회사 |
나노크리스탈을 갖는 비휘발성 메모리 소자의 제조방법
|
|
KR100648252B1
(ko)
*
|
2004-11-22 |
2006-11-24 |
삼성전자주식회사 |
텅스텐막 형성 방법 및 이를 이용하는 반도체 소자의 형성방법
|
|
US7429402B2
(en)
|
2004-12-10 |
2008-09-30 |
Applied Materials, Inc. |
Ruthenium as an underlayer for tungsten film deposition
|
|
KR100745066B1
(ko)
|
2005-03-24 |
2007-08-01 |
주식회사 하이닉스반도체 |
반도체 소자의 금속배선 형성 방법
|
|
JP4945937B2
(ja)
*
|
2005-07-01 |
2012-06-06 |
東京エレクトロン株式会社 |
タングステン膜の形成方法、成膜装置及び記憶媒体
|
|
JP2007048926A
(ja)
*
|
2005-08-10 |
2007-02-22 |
Tokyo Electron Ltd |
W系膜の成膜方法、ゲート電極の形成方法、半導体装置の製造方法およびコンピュータ読取可能な記憶媒体
|
|
JP2007046134A
(ja)
*
|
2005-08-11 |
2007-02-22 |
Tokyo Electron Ltd |
金属系膜形成方法及びプログラムを記録した記録媒体
|
|
US7235485B2
(en)
*
|
2005-10-14 |
2007-06-26 |
Samsung Electronics Co., Ltd. |
Method of manufacturing semiconductor device
|
|
US8993055B2
(en)
|
2005-10-27 |
2015-03-31 |
Asm International N.V. |
Enhanced thin film deposition
|
|
US7850779B2
(en)
*
|
2005-11-04 |
2010-12-14 |
Applied Materisals, Inc. |
Apparatus and process for plasma-enhanced atomic layer deposition
|
|
JP2007194468A
(ja)
*
|
2006-01-20 |
2007-08-02 |
Renesas Technology Corp |
半導体装置およびその製造方法
|
|
US7951669B2
(en)
|
2006-04-13 |
2011-05-31 |
Sandisk Corporation |
Methods of making flash memory cell arrays having dual control gates per memory cell charge storage element
|
|
EP2047502A4
(en)
*
|
2006-06-30 |
2009-12-30 |
Applied Materials Inc |
NANOCRYSTAL FORMATION
|
|
US8268409B2
(en)
*
|
2006-10-25 |
2012-09-18 |
Asm America, Inc. |
Plasma-enhanced deposition of metal carbide films
|
|
US7611751B2
(en)
|
2006-11-01 |
2009-11-03 |
Asm America, Inc. |
Vapor deposition of metal carbide films
|
|
US20080206987A1
(en)
*
|
2007-01-29 |
2008-08-28 |
Gelatos Avgerinos V |
Process for tungsten nitride deposition by a temperature controlled lid assembly
|
|
US8287647B2
(en)
*
|
2007-04-17 |
2012-10-16 |
Lam Research Corporation |
Apparatus and method for atomic layer deposition
|
|
US7713874B2
(en)
|
2007-05-02 |
2010-05-11 |
Asm America, Inc. |
Periodic plasma annealing in an ALD-type process
|
|
US20080273410A1
(en)
*
|
2007-05-04 |
2008-11-06 |
Jaydeb Goswami |
Tungsten digitlines
|
|
CN101308794B
(zh)
*
|
2007-05-15 |
2010-09-15 |
应用材料股份有限公司 |
钨材料的原子层沉积
|
|
US7655567B1
(en)
|
2007-07-24 |
2010-02-02 |
Novellus Systems, Inc. |
Methods for improving uniformity and resistivity of thin tungsten films
|
|
US8049178B2
(en)
*
|
2007-08-30 |
2011-11-01 |
Washington State University Research Foundation |
Semiconductive materials and associated uses thereof
|
|
US20090087550A1
(en)
*
|
2007-09-27 |
2009-04-02 |
Tokyo Electron Limited |
Sequential flow deposition of a tungsten silicide gate electrode film
|
|
US7772114B2
(en)
*
|
2007-12-05 |
2010-08-10 |
Novellus Systems, Inc. |
Method for improving uniformity and adhesion of low resistivity tungsten film
|
|
US8053365B2
(en)
*
|
2007-12-21 |
2011-11-08 |
Novellus Systems, Inc. |
Methods for forming all tungsten contacts and lines
|
|
US8062977B1
(en)
|
2008-01-31 |
2011-11-22 |
Novellus Systems, Inc. |
Ternary tungsten-containing resistive thin films
|
|
KR101540077B1
(ko)
|
2008-04-16 |
2015-07-28 |
에이에스엠 아메리카, 인코포레이티드 |
알루미늄 탄화수소 화합물들을 이용한 금속 카바이드 막들의 원자층 증착법
|
|
US7666474B2
(en)
|
2008-05-07 |
2010-02-23 |
Asm America, Inc. |
Plasma-enhanced pulsed deposition of metal carbide films
|
|
US8058170B2
(en)
|
2008-06-12 |
2011-11-15 |
Novellus Systems, Inc. |
Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics
|
|
US8551885B2
(en)
*
|
2008-08-29 |
2013-10-08 |
Novellus Systems, Inc. |
Method for reducing tungsten roughness and improving reflectivity
|
|
KR101485506B1
(ko)
|
2008-11-19 |
2015-01-28 |
주식회사 원익아이피에스 |
박막 증착방법
|
|
KR101462154B1
(ko)
|
2008-12-15 |
2014-11-14 |
주식회사 원익아이피에스 |
텅스텐 박막 증착방법
|
|
CN102265383B
(zh)
*
|
2008-12-31 |
2014-06-11 |
应用材料公司 |
用于沉积具有降低电阻率及改良表面形态的钨膜的方法
|
|
US20100267230A1
(en)
*
|
2009-04-16 |
2010-10-21 |
Anand Chandrashekar |
Method for forming tungsten contacts and interconnects with small critical dimensions
|
|
US9159571B2
(en)
|
2009-04-16 |
2015-10-13 |
Lam Research Corporation |
Tungsten deposition process using germanium-containing reducing agent
|
|
JPWO2011013811A1
(ja)
*
|
2009-07-31 |
2013-01-10 |
株式会社アルバック |
半導体装置の製造装置及び半導体装置の製造方法
|
|
US10256142B2
(en)
|
2009-08-04 |
2019-04-09 |
Novellus Systems, Inc. |
Tungsten feature fill with nucleation inhibition
|
|
US12444651B2
(en)
|
2009-08-04 |
2025-10-14 |
Novellus Systems, Inc. |
Tungsten feature fill with nucleation inhibition
|
|
US8207062B2
(en)
*
|
2009-09-09 |
2012-06-26 |
Novellus Systems, Inc. |
Method for improving adhesion of low resistivity tungsten/tungsten nitride layers
|
|
US10513772B2
(en)
|
2009-10-20 |
2019-12-24 |
Asm International N.V. |
Process for passivating dielectric films
|
|
US8709948B2
(en)
|
2010-03-12 |
2014-04-29 |
Novellus Systems, Inc. |
Tungsten barrier and seed for copper filled TSV
|
|
US8633109B2
(en)
*
|
2010-08-04 |
2014-01-21 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Soft error rate (SER) reduction in advanced silicon processes
|
|
EP2721191B1
(en)
|
2011-06-16 |
2022-09-14 |
Zimmer, Inc. |
Chemical vapor infiltration apparatus and process
|
|
US8734514B2
(en)
|
2011-06-16 |
2014-05-27 |
Zimmer, Inc. |
Micro-alloyed porous metal having optimized chemical composition and method of manufacturing the same
|
|
US20130224948A1
(en)
*
|
2012-02-28 |
2013-08-29 |
Globalfoundries Inc. |
Methods for deposition of tungsten in the fabrication of an integrated circuit
|
|
KR102131581B1
(ko)
|
2012-03-27 |
2020-07-08 |
노벨러스 시스템즈, 인코포레이티드 |
텅스텐 피처 충진
|
|
KR101435100B1
(ko)
*
|
2012-06-20 |
2014-08-29 |
주식회사 엠티에스나노테크 |
원자층 증착 장치
|
|
US9034760B2
(en)
|
2012-06-29 |
2015-05-19 |
Novellus Systems, Inc. |
Methods of forming tensile tungsten films and compressive tungsten films
|
|
US8975184B2
(en)
|
2012-07-27 |
2015-03-10 |
Novellus Systems, Inc. |
Methods of improving tungsten contact resistance in small critical dimension features
|
|
US8853080B2
(en)
|
2012-09-09 |
2014-10-07 |
Novellus Systems, Inc. |
Method for depositing tungsten film with low roughness and low resistivity
|
|
US9169556B2
(en)
*
|
2012-10-11 |
2015-10-27 |
Applied Materials, Inc. |
Tungsten growth modulation by controlling surface composition
|
|
US9546419B2
(en)
*
|
2012-11-26 |
2017-01-17 |
Applied Materials, Inc. |
Method of reducing tungsten film roughness and resistivity
|
|
KR101971547B1
(ko)
*
|
2013-01-03 |
2019-04-24 |
주식회사 원익아이피에스 |
반도체 소자의 금속층 형성 방법
|
|
US9412602B2
(en)
|
2013-03-13 |
2016-08-09 |
Asm Ip Holding B.V. |
Deposition of smooth metal nitride films
|
|
US8846550B1
(en)
|
2013-03-14 |
2014-09-30 |
Asm Ip Holding B.V. |
Silane or borane treatment of metal thin films
|
|
US8841182B1
(en)
|
2013-03-14 |
2014-09-23 |
Asm Ip Holding B.V. |
Silane and borane treatments for titanium carbide films
|
|
US9153486B2
(en)
|
2013-04-12 |
2015-10-06 |
Lam Research Corporation |
CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications
|
|
US9589808B2
(en)
|
2013-12-19 |
2017-03-07 |
Lam Research Corporation |
Method for depositing extremely low resistivity tungsten
|
|
US9394609B2
(en)
|
2014-02-13 |
2016-07-19 |
Asm Ip Holding B.V. |
Atomic layer deposition of aluminum fluoride thin films
|
|
US10643925B2
(en)
|
2014-04-17 |
2020-05-05 |
Asm Ip Holding B.V. |
Fluorine-containing conductive films
|
|
KR20170029622A
(ko)
|
2014-07-17 |
2017-03-15 |
어플라이드 머티어리얼스, 인코포레이티드 |
캐러셀 배치 증착 반응기를 사용하여 코발트 층을 증착하기 위한 방법들 및 장치
|
|
US10094023B2
(en)
|
2014-08-01 |
2018-10-09 |
Applied Materials, Inc. |
Methods and apparatus for chemical vapor deposition of a cobalt layer
|
|
US20170309490A1
(en)
*
|
2014-09-24 |
2017-10-26 |
Hitachi Kokusai Electric Inc. |
Method of manufacturing semiconductor device
|
|
US9997405B2
(en)
|
2014-09-30 |
2018-06-12 |
Lam Research Corporation |
Feature fill with nucleation inhibition
|
|
KR102216575B1
(ko)
|
2014-10-23 |
2021-02-18 |
에이에스엠 아이피 홀딩 비.브이. |
티타늄 알루미늄 및 탄탈륨 알루미늄 박막들
|
|
US9953984B2
(en)
|
2015-02-11 |
2018-04-24 |
Lam Research Corporation |
Tungsten for wordline applications
|
|
US9754824B2
(en)
|
2015-05-27 |
2017-09-05 |
Lam Research Corporation |
Tungsten films having low fluorine content
|
|
US9978605B2
(en)
|
2015-05-27 |
2018-05-22 |
Lam Research Corporation |
Method of forming low resistivity fluorine free tungsten film without nucleation
|
|
US9613818B2
(en)
|
2015-05-27 |
2017-04-04 |
Lam Research Corporation |
Deposition of low fluorine tungsten by sequential CVD process
|
|
KR102397797B1
(ko)
*
|
2015-05-27 |
2022-05-12 |
램 리써치 코포레이션 |
순차적인 cvd 프로세스에 의한 저 불소 텅스텐의 증착
|
|
US9941425B2
(en)
|
2015-10-16 |
2018-04-10 |
Asm Ip Holdings B.V. |
Photoactive devices and materials
|
|
WO2017070634A1
(en)
*
|
2015-10-23 |
2017-04-27 |
Applied Materials, Inc. |
Methods for spatial metal atomic layer deposition
|
|
US9786491B2
(en)
|
2015-11-12 |
2017-10-10 |
Asm Ip Holding B.V. |
Formation of SiOCN thin films
|
|
US9786492B2
(en)
|
2015-11-12 |
2017-10-10 |
Asm Ip Holding B.V. |
Formation of SiOCN thin films
|
|
US9972968B2
(en)
*
|
2016-04-20 |
2018-05-15 |
Trumpf Photonics, Inc. |
Passivation of laser facets and systems for performing the same
|
|
KR20170120443A
(ko)
*
|
2016-04-21 |
2017-10-31 |
삼성전자주식회사 |
텅스텐 박막의 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
|
|
KR102378021B1
(ko)
|
2016-05-06 |
2022-03-23 |
에이에스엠 아이피 홀딩 비.브이. |
SiOC 박막의 형성
|
|
US10573522B2
(en)
|
2016-08-16 |
2020-02-25 |
Lam Research Corporation |
Method for preventing line bending during metal fill process
|
|
US10186420B2
(en)
|
2016-11-29 |
2019-01-22 |
Asm Ip Holding B.V. |
Formation of silicon-containing thin films
|
|
US10847529B2
(en)
|
2017-04-13 |
2020-11-24 |
Asm Ip Holding B.V. |
Substrate processing method and device manufactured by the same
|
|
US10504901B2
(en)
|
2017-04-26 |
2019-12-10 |
Asm Ip Holding B.V. |
Substrate processing method and device manufactured using the same
|
|
CN114875388A
(zh)
|
2017-05-05 |
2022-08-09 |
Asm Ip 控股有限公司 |
用于受控形成含氧薄膜的等离子体增强沉积方法
|
|
US10622214B2
(en)
|
2017-05-25 |
2020-04-14 |
Applied Materials, Inc. |
Tungsten defluorination by high pressure treatment
|
|
US10199267B2
(en)
|
2017-06-30 |
2019-02-05 |
Lam Research Corporation |
Tungsten nitride barrier layer deposition
|
|
KR102808924B1
(ko)
|
2017-08-14 |
2025-05-15 |
램 리써치 코포레이션 |
3차원 수직 nand 워드라인을 위한 금속 충진 프로세스
|
|
US10276411B2
(en)
|
2017-08-18 |
2019-04-30 |
Applied Materials, Inc. |
High pressure and high temperature anneal chamber
|
|
TWI761636B
(zh)
|
2017-12-04 |
2022-04-21 |
荷蘭商Asm Ip控股公司 |
電漿增強型原子層沉積製程及沉積碳氧化矽薄膜的方法
|
|
EP3768874A4
(en)
|
2018-03-19 |
2022-03-30 |
Applied Materials, Inc. |
METHODS FOR DEPOSITING COATINGS ON AEROSPACE ELEMENTS
|
|
WO2019209401A1
(en)
|
2018-04-27 |
2019-10-31 |
Applied Materials, Inc. |
Protection of components from corrosion
|
|
US11201227B2
(en)
*
|
2018-04-27 |
2021-12-14 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Gate structure with barrier layer and method for forming the same
|
|
JP2021523292A
(ja)
|
2018-05-03 |
2021-09-02 |
ラム リサーチ コーポレーションLam Research Corporation |
3d nand構造内にタングステンおよび他の金属を堆積させる方法
|
|
WO2020028587A1
(en)
|
2018-07-31 |
2020-02-06 |
Lam Research Corporation |
Multi-layer feature fill
|
|
US11009339B2
(en)
|
2018-08-23 |
2021-05-18 |
Applied Materials, Inc. |
Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries
|
|
JP7721439B2
(ja)
|
2018-11-19 |
2025-08-12 |
ラム リサーチ コーポレーション |
タングステン用モリブデンテンプレート
|
|
US10636705B1
(en)
|
2018-11-29 |
2020-04-28 |
Applied Materials, Inc. |
High pressure annealing of metal gate structures
|
|
JP7649741B2
(ja)
|
2018-12-14 |
2025-03-21 |
ラム リサーチ コーポレーション |
3d nand構造上の原子層堆積
|
|
KR20250175011A
(ko)
|
2019-01-28 |
2025-12-15 |
램 리써치 코포레이션 |
금속 막들의 증착
|
|
US12359315B2
(en)
|
2019-02-14 |
2025-07-15 |
Asm Ip Holding B.V. |
Deposition of oxides and nitrides
|
|
SG11202109796QA
(en)
|
2019-03-11 |
2021-10-28 |
Lam Res Corp |
Precursors for deposition of molybdenum-containing films
|
|
WO2020210260A1
(en)
*
|
2019-04-11 |
2020-10-15 |
Lam Research Corporation |
High step coverage tungsten deposition
|
|
US11732353B2
(en)
|
2019-04-26 |
2023-08-22 |
Applied Materials, Inc. |
Methods of protecting aerospace components against corrosion and oxidation
|
|
US11794382B2
(en)
|
2019-05-16 |
2023-10-24 |
Applied Materials, Inc. |
Methods for depositing anti-coking protective coatings on aerospace components
|
|
US12237221B2
(en)
|
2019-05-22 |
2025-02-25 |
Lam Research Corporation |
Nucleation-free tungsten deposition
|
|
US11697879B2
(en)
|
2019-06-14 |
2023-07-11 |
Applied Materials, Inc. |
Methods for depositing sacrificial coatings on aerospace components
|
|
KR20220047333A
(ko)
|
2019-08-12 |
2022-04-15 |
램 리써치 코포레이션 |
텅스텐 증착
|
|
JP2022547025A
(ja)
|
2019-09-03 |
2022-11-10 |
ラム リサーチ コーポレーション |
モリブデン堆積
|
|
US11466364B2
(en)
|
2019-09-06 |
2022-10-11 |
Applied Materials, Inc. |
Methods for forming protective coatings containing crystallized aluminum oxide
|
|
WO2021076636A1
(en)
|
2019-10-15 |
2021-04-22 |
Lam Research Corporation |
Molybdenum fill
|
|
US12341005B2
(en)
|
2020-01-17 |
2025-06-24 |
Asm Ip Holding B.V. |
Formation of SiCN thin films
|
|
US12142479B2
(en)
|
2020-01-17 |
2024-11-12 |
Asm Ip Holding B.V. |
Formation of SiOCN thin films
|
|
US11519066B2
(en)
|
2020-05-21 |
2022-12-06 |
Applied Materials, Inc. |
Nitride protective coatings on aerospace components and methods for making the same
|
|
TW202200828A
(zh)
|
2020-06-24 |
2022-01-01 |
荷蘭商Asm Ip私人控股有限公司 |
含鉬薄膜的氣相沉積
|
|
CN115734826A
(zh)
|
2020-07-03 |
2023-03-03 |
应用材料公司 |
用于翻新航空部件的方法
|
|
CN112201748B
(zh)
*
|
2020-09-27 |
2024-04-16 |
昕原半导体(上海)有限公司 |
阻变存储器的钨薄膜制备方法
|
|
US11976002B2
(en)
|
2021-01-05 |
2024-05-07 |
Applied Materials, Inc. |
Methods for encapsulating silver mirrors on optical structures
|
|
US11939668B2
(en)
*
|
2022-04-26 |
2024-03-26 |
Applied Materials, Inc. |
Gas delivery for tungsten-containing layer
|
|
CN115011947A
(zh)
*
|
2022-06-30 |
2022-09-06 |
厦门韫茂科技有限公司 |
一种沉积钨的金刚石粉以及复合铜粉的材料及其制备方法
|