JP5048602B2 - 一連の堆積技術を用いる耐火性金属層を堆積する方法 - Google Patents
一連の堆積技術を用いる耐火性金属層を堆積する方法 Download PDFInfo
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Description
本発明の実施形態は、半導体基板の処理に関する。より具体的には、本発明の実施形態は、半導体基板上の耐火性金属層の堆積に関する。
半導体処理産業は、より広い表面領域を有する基板上に堆積された層の均一性を高めつつ、大きい生産性歩留まりを得ようと努力し続けている。新しい材料との組合せにおいて、これらの同一ファクタは、また、基板単位面積当たりの回路の高集積を提供する。回路集積化が高まると、より高い均一性と、層の厚さに関するプロセス制御の必要性が増大する。その結果、層の特性にわたる制御を維持しつつ、費用効果的方法で基板上に層を堆積する為に様々な技術が開発されてきた。
本発明の実施形態は、基板表面上にタングステン層を形成する為の改善された方法を含む。一態様において、その方法は、処理チャンバ内に基板表面を位置決めするステップと、基板表面をホウ化物に晒すステップと、交互にタングステン含有化合物と、シラン(SiH4)、ジシラン(Si2H6)、ジクロルシラン(SiCl2H2)、その誘導体、更に、これらの組合せから成る群から選択された還元性ガスを律動的に送ることにより、核形成層を同一の処理チャンバ内で堆積するステップと、を含む。
処理の統合
前述されたようなタングステン核形成層は、優れた膜特性で特徴部を形成する為に伝統的なバルク充填技術を用いて統合されたとき、特別な有用性を示した。統合スキームは、バルク充填化学的気相堆積(CVD)、物理的気相堆積(PVD)処理を用いた周期的堆積核形成を含んでもよい。そのような統合スキームを実行できる統合処理システムは、Endula SL(登録商標)、Centura(登録商標)、Producer(登録商標)処理システムを含み、各々はカリフォルニア州サンタクララ市に所在するアプライドマテリアルズ社から利用可能である。これらの、どのシステムでも、核形成層を堆積する為に少なくとも一つの周期的堆積チャンバ、バルク充填の為に少なくとも一つのCVDチャンバ又はPVDチャンバを含むように構成可能である。
図4は、本願で説明された実施形態に従って堆積された核形成層を利用する例示的な金属酸化物ゲート装置400の横断面図を示す。装置400は、一般的に、スペーサ416により囲まれた、晒されたゲート410、基板表面412内に形成されたシリコンソース/ドレイン領域420を含む。スペーサ416は、通常、二酸化珪素のような酸化物、または、窒化ケイ素のような窒化物を含む。
図5は、トレンチ型コンデンサ530の頂部付近にトランジスタ520が位置決めされた従来のDRAM装置の横断面図である。DRAM装置510に対するアクセストランジスタ520は、トレンチ型コンデンサ530の頂部付近に位置決めされている。アクセストランジスタ520は、ソース領域522、ゲート領域524、ドレイン領域526を有するn−p−n型トランジスタを備えるのが好ましい。アクセストランジスタ520のゲート領域524は、P+基板を覆ってP−がドープされた、シリコンエピタキシャル層である。アクセストランジスタ520のソース領域522は、ゲート領域524の第1側部に堆積された、N+がドープされた材料であり、ドレイン領域526は、ゲート領域524の第2側部(ソース領域の反対側)に堆積された、N+がドープされた材料である。
圧力:約1トル
温度:約350℃
流量:1500sccmのB2H6、1500sccmのH2
持続期間:約10秒間
次に、タングステン核形成層は、前述した周期的堆積技術を使用して、バリア層上に形成された。核形成層の厚さは、約100Åであった。最後に、バルクタングステン層が、CVDを使用して約2500Åの厚さまで核形成層上に堆積された。結果として生じたタングステンバルク充填材は、約2%未満の均一なバラツキを示した。
圧力:約90トル
温度:約300℃
流量:100sccmのSiH4、500sccmのH2
持続期間:約60秒間
次に、タングステン核形成層は、前述した周期的堆積技術を使用して、バリア層上に形成された。核形成層の厚さは、約100Åであった。最後に、バルクタングステン層が、CVDを使用して約2500Åの厚さまで核形成層上に堆積された。結果として生じたタングステンバルク充填材は、約5%未満の均一なバラツキを示した。
Claims (21)
- 基板表面上に耐火性金属層を形成する方法であって:
基板上に堆積されたバリア層を処理チャンバ内でソーキング処理に晒すステップと;
前記基板を前記処理チャンバ内で第1及び第2の反応性ガスに連続的に晒すことにより、耐火性金属核形成層を前記バリア層上に形成するステップと;
気相堆積処理を採用することにより、バルク堆積層を前記耐火性金属核形成層上に形成して、前記第1及び第2の反応性ガスの1つに含まれる耐火性金属をバルク堆積するステップと;
を備え、前記耐火性金属核形成層を形成するステップは、前記基板を前記第1の反応性ガスに晒した後、該基板を前記第2の反応性ガスに晒す前に、パージガスを前記処理チャンバに導入するステップを更に備える、前記方法。 - 前記ソーキング処理は、前記バリア層をジボランに晒すステップを含む、請求項1記載の方法。
- 前記ソーキング処理は、前記バリア層をシランに晒すステップを含む、請求項1記載の方法。
- 前記バリア層は、チタン又は窒化チタンを含む、請求項1記載の方法。
- 前記耐火性金属核形成層を形成するステップは、次いで前記処理チャンバをポンピングしてガスを取り除くことにより、前記処理チャンバから前記第1の反応性ガスをパージするステップを更に備える、請求項1記載の方法。
- 前記耐火性金属核形成層を形成するステップは、ジボランと耐火性金属化合物との交互の層を、前記基板上に形成するステップを備える、請求項1記載の方法。
- 前記耐火性金属核形成層は、10Å〜100Åの範囲内の厚さを有する、請求項1記載の方法。
- 前記バルク堆積層は、化学的気相堆積処理又は物理的気相堆積処理を採用して堆積される、請求項1記載の方法。
- 基板表面上にタングステン含有材料を形成する方法であって:
基板上に堆積されたバリア層を処理チャンバ内でソーキング処理に晒すステップと;
原子層堆積処理の間、前記基板を前記処理チャンバ内で処理ガス及びタングステン含有ガスに連続的に晒すことにより、タングステン含有核形成層を形成するステップであって、前記処理ガスがホウ素含有ガス及び窒素含有ガスを含むステップと;
化学的気相堆積処理の間、前記基板を、前記タングステン含有ガス及び反応性前駆体ガスを含む堆積ガスに晒すことにより、前記タングステン含有核形成層の上にタングステンバルク層を形成するステップと;
を備え、前記タングステン含有核形成層を形成するステップは、前記原子層堆積処理の間、該基板を前記タングステン含有ガスに晒す前、前記基板を前記反応性ガスに晒した後に、パージガスを前記処理チャンバに導入するステップを更に備える、前記方法。 - 前記タングステン含有ガスはタングステン六フッ化物を含み、前記ホウ素含有ガスはジボランを含み、前記窒素含有ガスは二窒素を含む、請求項9記載の方法。
- 前記タングステン含有核形成層は、前記基板上に堆積されたシリコン含有層の上に堆積される、請求項9記載の方法。
- 前記タングステン含有核形成層は、10Å〜100Åの範囲内の厚さを有する、請求項9記載の方法。
- 前記反応性前駆体ガスは、シラン、水素、アルゴン、及びこれらの組合せからなる群から選ばれるガスを含む、請求項9記載の方法。
- 前記ソーキング処理は、前記バリア層をジボランに晒すステップを含む、請求項9記載の方法。
- 前記ソーキング処理は、前記バリア層をシランに晒すステップを含む、請求項9記載の方法。
- 前記バリア層は、チタン又は窒化チタンを含む、請求項9記載の方法。
- 基板表面上にタングステン含有材料を形成する方法であって:
基板上に堆積されたバリア層を処理チャンバ内でソーキング処理に晒すステップと;
原子層堆積処理の間、前記基板をタングステン含有ガス、ジボラン、及び窒素含有ガスに連続的に晒すことにより、タングステン核形成層を前記バリア層上に形成するステップと;
化学的気相堆積処理の間、前記基板を、前記タングステン含有ガス及び反応性前駆体ガスを含む堆積ガスに晒すことにより、前記タングステン核形成層の上にタングステンバルク層を形成するステップと;
を備え、前記タングステン含有核形成層を形成するステップは、前記原子層堆積処理の間、該基板をジボラン及び前記窒素含有ガスに晒す前、前記基板を前記タングステン含有ガスに晒した後に、パージガスを前記処理チャンバに導入するステップを更に備える、前記方法。 - 前記ソーキング処理は、前記バリア層をジボランに晒すステップを含む、請求項17記載の方法。
- 前記ソーキング処理は、前記バリア層をシランに晒すステップを含む、請求項17記載の方法。
- 前記タングステン含有ガスはタングステン六フッ化物を含み、前記窒素含有ガスは二窒素を含む、請求項17記載の方法。
- 前記反応性前駆体ガスは、シラン、水素、アルゴン、及びこれらの組合せからなる群から選ばれるガスを含む、請求項17記載の方法。
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US60/328,451 | 2001-10-10 |
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2002
- 2002-10-09 TW TW091123374A patent/TW589684B/zh not_active IP Right Cessation
- 2002-10-10 US US10/268,195 patent/US6797340B2/en not_active Expired - Lifetime
- 2002-10-10 JP JP2003534647A patent/JP4174424B2/ja not_active Expired - Lifetime
- 2002-10-10 KR KR1020047005253A patent/KR100978993B1/ko active IP Right Grant
- 2002-10-10 WO PCT/US2002/032348 patent/WO2003031679A2/en active Application Filing
-
2003
- 2003-04-18 US US10/418,728 patent/US20060040052A1/en not_active Abandoned
-
2004
- 2004-06-29 US US10/879,448 patent/US20040247788A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
---|---|
KR20040050073A (ko) | 2004-06-14 |
US20060040052A1 (en) | 2006-02-23 |
TW589684B (en) | 2004-06-01 |
US20030104126A1 (en) | 2003-06-05 |
US20040247788A1 (en) | 2004-12-09 |
WO2003031679A3 (en) | 2003-08-21 |
US6797340B2 (en) | 2004-09-28 |
JP2005505690A (ja) | 2005-02-24 |
KR100978993B1 (ko) | 2010-08-30 |
JP4174424B2 (ja) | 2008-10-29 |
WO2003031679B1 (en) | 2004-05-13 |
JP2008303466A (ja) | 2008-12-18 |
WO2003031679A2 (en) | 2003-04-17 |
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