JP2005504445A5 - - Google Patents
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- Publication number
- JP2005504445A5 JP2005504445A5 JP2003532249A JP2003532249A JP2005504445A5 JP 2005504445 A5 JP2005504445 A5 JP 2005504445A5 JP 2003532249 A JP2003532249 A JP 2003532249A JP 2003532249 A JP2003532249 A JP 2003532249A JP 2005504445 A5 JP2005504445 A5 JP 2005504445A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- laser
- processing
- gas
- prepared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IE20010864 | 2001-10-01 | ||
| IE2002/0315A IE83726B1 (en) | 2002-04-26 | Machining of semiconductor materials | |
| PCT/EP2002/011001 WO2003028949A2 (en) | 2001-10-01 | 2002-10-01 | Method of machining substrates |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009191614A Division JP2010016392A (ja) | 2001-10-01 | 2009-08-21 | 基板、特に半導体ウェハの加工 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005504445A JP2005504445A (ja) | 2005-02-10 |
| JP2005504445A5 true JP2005504445A5 (enExample) | 2005-12-22 |
Family
ID=34219649
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003532249A Pending JP2005504445A (ja) | 2001-10-01 | 2002-10-01 | 基板、特に半導体ウェハの加工 |
| JP2009191614A Pending JP2010016392A (ja) | 2001-10-01 | 2009-08-21 | 基板、特に半導体ウェハの加工 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009191614A Pending JP2010016392A (ja) | 2001-10-01 | 2009-08-21 | 基板、特に半導体ウェハの加工 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8048774B2 (enExample) |
| EP (2) | EP1677346B1 (enExample) |
| JP (2) | JP2005504445A (enExample) |
| KR (1) | KR100913510B1 (enExample) |
| CN (1) | CN100369235C (enExample) |
| AT (2) | ATE327572T1 (enExample) |
| AU (1) | AU2002362491A1 (enExample) |
| DE (1) | DE60211728T2 (enExample) |
| WO (1) | WO2003028949A2 (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7357486B2 (en) | 2001-12-20 | 2008-04-15 | Hewlett-Packard Development Company, L.P. | Method of laser machining a fluid slot |
| ATE316691T1 (de) * | 2002-04-19 | 2006-02-15 | Xsil Technology Ltd | Laser-behandlung |
| WO2004096483A1 (ja) | 2003-04-25 | 2004-11-11 | Nitto Denko Corporation | レーザー加工品の製造方法、およびそれに用いるレーザー加工用粘着シート |
| JP4676711B2 (ja) * | 2004-03-29 | 2011-04-27 | 日東電工株式会社 | レーザー加工品の製造方法、およびそれに用いるレーザー加工用粘着シート |
| JP4601403B2 (ja) * | 2004-11-25 | 2010-12-22 | パナソニック株式会社 | 半導体レーザ素子の製造方法及びその製造装置 |
| KR100689698B1 (ko) | 2005-01-12 | 2007-03-08 | 주식회사 이오테크닉스 | 패시베이션층이 형성된 대상물 가공 방법 |
| JP4854061B2 (ja) | 2005-01-14 | 2012-01-11 | 日東電工株式会社 | レーザー加工品の製造方法及びレーザー加工用保護シート |
| JP4873863B2 (ja) | 2005-01-14 | 2012-02-08 | 日東電工株式会社 | レーザー加工品の製造方法及びレーザー加工用粘着シート |
| US8030132B2 (en) * | 2005-05-31 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including peeling step |
| JP4916680B2 (ja) * | 2005-06-30 | 2012-04-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、剥離方法 |
| JP4731244B2 (ja) * | 2005-08-11 | 2011-07-20 | 株式会社ディスコ | ウエーハの分割方法 |
| US8624157B2 (en) | 2006-05-25 | 2014-01-07 | Electro Scientific Industries, Inc. | Ultrashort laser pulse wafer scribing |
| US20070272666A1 (en) * | 2006-05-25 | 2007-11-29 | O'brien James N | Infrared laser wafer scribing using short pulses |
| JP5023614B2 (ja) | 2006-08-24 | 2012-09-12 | パナソニック株式会社 | 半導体チップの製造方法及び半導体ウエハの処理方法 |
| JP2008153349A (ja) * | 2006-12-15 | 2008-07-03 | Disco Abrasive Syst Ltd | ウェーハの分割方法 |
| JP2008235398A (ja) * | 2007-03-19 | 2008-10-02 | Disco Abrasive Syst Ltd | デバイスの製造方法 |
| EP2159558A1 (en) | 2008-08-28 | 2010-03-03 | Sensirion AG | A method for manufacturing an integrated pressure sensor |
| KR101094450B1 (ko) * | 2009-06-05 | 2011-12-15 | 에스티에스반도체통신 주식회사 | 플라즈마를 이용한 다이싱 방법 |
| EP2502066B1 (en) | 2009-11-18 | 2017-09-27 | Sensirion AG | Sensor mounted in flip-chip technology on a substrate and its manufacture |
| EP2502067B1 (en) | 2009-11-18 | 2015-03-11 | Sensirion AG | Sensor mounted in flip-chip technology at a substrate edge |
| US8642448B2 (en) | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
| US8283742B2 (en) * | 2010-08-31 | 2012-10-09 | Infineon Technologies, A.G. | Thin-wafer current sensors |
| US8168474B1 (en) | 2011-01-10 | 2012-05-01 | International Business Machines Corporation | Self-dicing chips using through silicon vias |
| CN102623547A (zh) * | 2011-01-26 | 2012-08-01 | 无锡尚德太阳能电力有限公司 | 太阳电池浆料处理方法及相应的太阳电池 |
| KR101219386B1 (ko) | 2011-02-16 | 2013-01-21 | 한국기계연구원 | 관통형 실리콘 비아의 가공방법 및 그에 의해 제조된 반도체 칩 |
| US9029242B2 (en) | 2011-06-15 | 2015-05-12 | Applied Materials, Inc. | Damage isolation by shaped beam delivery in laser scribing process |
| US8759197B2 (en) | 2011-06-15 | 2014-06-24 | Applied Materials, Inc. | Multi-step and asymmetrically shaped laser beam scribing |
| US8557682B2 (en) | 2011-06-15 | 2013-10-15 | Applied Materials, Inc. | Multi-layer mask for substrate dicing by laser and plasma etch |
| US8557683B2 (en) | 2011-06-15 | 2013-10-15 | Applied Materials, Inc. | Multi-step and asymmetrically shaped laser beam scribing |
| US8598016B2 (en) | 2011-06-15 | 2013-12-03 | Applied Materials, Inc. | In-situ deposited mask layer for device singulation by laser scribing and plasma etch |
| US20120322235A1 (en) * | 2011-06-15 | 2012-12-20 | Wei-Sheng Lei | Wafer dicing using hybrid galvanic laser scribing process with plasma etch |
| US8703581B2 (en) | 2011-06-15 | 2014-04-22 | Applied Materials, Inc. | Water soluble mask for substrate dicing by laser and plasma etch |
| KR20130083721A (ko) | 2012-01-13 | 2013-07-23 | 삼성전자주식회사 | 레이저 어블레이션을 이용한 관통 실리콘 비아 형성방법 |
| CN104136967B (zh) * | 2012-02-28 | 2018-02-16 | 伊雷克托科学工业股份有限公司 | 用于分离增强玻璃的方法及装置及由该增强玻璃生产的物品 |
| US8652940B2 (en) * | 2012-04-10 | 2014-02-18 | Applied Materials, Inc. | Wafer dicing used hybrid multi-step laser scribing process with plasma etch |
| JP6178077B2 (ja) * | 2013-01-23 | 2017-08-09 | 株式会社ディスコ | ウエーハの加工方法 |
| CN103495928B (zh) * | 2013-10-09 | 2015-07-29 | 广东赛翡蓝宝石科技有限公司 | 一种提高蓝宝石衬底片表面质量和产品良率的加工方法 |
| JP6250429B2 (ja) * | 2014-02-13 | 2017-12-20 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置およびその製造方法 |
| US10043676B2 (en) * | 2015-10-15 | 2018-08-07 | Vishay General Semiconductor Llc | Local semiconductor wafer thinning |
| US20190009362A1 (en) * | 2015-12-22 | 2019-01-10 | Heraeus Deutschland GmbH & Co. KG | Method for producing a metal-ceramic substrate with picolaser |
| DE102017201151B4 (de) * | 2016-02-01 | 2024-05-08 | Disco Corporation | Verfahren zum Bearbeiten eines Substrats |
| GB2572608A (en) | 2018-04-03 | 2019-10-09 | Ilika Tech Ltd | Laser processing method for thin film structures |
| CN109623581A (zh) * | 2019-01-04 | 2019-04-16 | 芜湖启迪半导体有限公司 | 一种硬质材料的表面抛光方法 |
| KR20220038811A (ko) * | 2019-08-15 | 2022-03-29 | 에이비엠 컨설팅, 엘.엘.씨. | 반도체 공작물의 재생 및 재활용 |
| CN113649709A (zh) * | 2021-08-16 | 2021-11-16 | 湖北三维半导体集成创新中心有限责任公司 | 晶圆切割方法 |
| US12087670B1 (en) * | 2023-08-09 | 2024-09-10 | Lux Semiconductors, Inc. | Metal substrates with structures formed therein and methods of making same |
Family Cites Families (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5635025B2 (enExample) * | 1971-11-02 | 1981-08-14 | ||
| JPS5279654A (en) * | 1975-12-25 | 1977-07-04 | Mitsubishi Electric Corp | Production of semiconductor device |
| US4023260A (en) * | 1976-03-05 | 1977-05-17 | Bell Telephone Laboratories, Incorporated | Method of manufacturing semiconductor diodes for use in millimeter-wave circuits |
| US4023280A (en) | 1976-05-12 | 1977-05-17 | Institute Of Gas Technology | Valve for ash agglomeration device |
| JPS5875846A (ja) * | 1982-02-26 | 1983-05-07 | Toshiba Corp | レ−ザけがき方法 |
| JPS6041266A (ja) * | 1983-08-15 | 1985-03-04 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法およびその作製用装置 |
| JPS6060176U (ja) * | 1983-09-29 | 1985-04-26 | 富士通株式会社 | レ−ザ光ビ−ム加工用治具 |
| JPS61112345A (ja) * | 1984-11-07 | 1986-05-30 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6265833U (enExample) * | 1985-10-14 | 1987-04-23 | ||
| JPS62219954A (ja) * | 1986-03-20 | 1987-09-28 | Fujitsu Ltd | 三次元icの製造方法 |
| JPH0777265B2 (ja) * | 1987-10-22 | 1995-08-16 | 三菱電機株式会社 | 半導体装置の製造方法 |
| GB2222385B (en) * | 1988-09-03 | 1992-08-05 | Plessey Co Plc | A method of producing metal-coated vias |
| US4978639A (en) * | 1989-01-10 | 1990-12-18 | Avantek, Inc. | Method for the simultaneous formation of via-holes and wraparound plating on semiconductor chips |
| US5217916A (en) * | 1989-10-03 | 1993-06-08 | Trw Inc. | Method of making an adaptive configurable gate array |
| JPH03270156A (ja) * | 1990-03-20 | 1991-12-02 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPH04142760A (ja) * | 1990-10-03 | 1992-05-15 | Nec Corp | 混成集積回路の製造方法 |
| US5397420A (en) * | 1991-03-03 | 1995-03-14 | Nippondenso Co., Ltd. | Fine structure forming device |
| JPH04364088A (ja) * | 1991-06-11 | 1992-12-16 | Nec Corp | 回路基板のスクライブ方法 |
| JPH05235333A (ja) * | 1992-02-21 | 1993-09-10 | Meidensha Corp | 半導体素子の製造方法 |
| JPH07106285A (ja) * | 1993-10-08 | 1995-04-21 | Oki Electric Ind Co Ltd | 半導体製造方法 |
| DE4343843A1 (de) * | 1993-12-22 | 1995-06-29 | Abb Patent Gmbh | Verfahren zur Herstellung strukturierter Metallisierungen |
| US5493096A (en) * | 1994-05-10 | 1996-02-20 | Grumman Aerospace Corporation | Thin substrate micro-via interconnect |
| JP2810625B2 (ja) * | 1994-05-30 | 1998-10-15 | 川崎重工業株式会社 | レーザ加工用ヘッド |
| US5841099A (en) * | 1994-07-18 | 1998-11-24 | Electro Scientific Industries, Inc. | Method employing UV laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets |
| US5614114A (en) * | 1994-07-18 | 1997-03-25 | Electro Scientific Industries, Inc. | Laser system and method for plating vias |
| US5631190A (en) * | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
| US5597767A (en) * | 1995-01-06 | 1997-01-28 | Texas Instruments Incorporated | Separation of wafer into die with wafer-level processing |
| US5577309A (en) * | 1995-03-01 | 1996-11-26 | Texas Instruments Incorporated | Method for forming electrical contact to the optical coating of an infrared detector |
| US5646067A (en) * | 1995-06-05 | 1997-07-08 | Harris Corporation | Method of bonding wafers having vias including conductive material |
| US5691248A (en) * | 1995-07-26 | 1997-11-25 | International Business Machines Corporation | Methods for precise definition of integrated circuit chip edges |
| JPH1027971A (ja) * | 1996-07-10 | 1998-01-27 | Nec Corp | 有機薄膜多層配線基板の切断方法 |
| US6074898A (en) * | 1996-09-18 | 2000-06-13 | Sony Corporation | Lead frame and integrated circuit package |
| JP4011695B2 (ja) * | 1996-12-02 | 2007-11-21 | 株式会社東芝 | マルチチップ半導体装置用チップおよびその形成方法 |
| KR100222299B1 (ko) * | 1996-12-16 | 1999-10-01 | 윤종용 | 웨이퍼 레벨 칩 스케일 패키지 및 그의 제조 방법 |
| US6245587B1 (en) * | 1997-02-25 | 2001-06-12 | International Business Machines Corporation | Method for making semiconductor devices having backside probing capability |
| US5863813A (en) | 1997-08-20 | 1999-01-26 | Micron Communications, Inc. | Method of processing semiconductive material wafers and method of forming flip chips and semiconductor chips |
| JP3184493B2 (ja) * | 1997-10-01 | 2001-07-09 | 松下電子工業株式会社 | 電子装置の製造方法 |
| AU3144899A (en) * | 1998-03-14 | 1999-10-11 | Michael Stromberg | Method and device for treating wafers presenting components during thinning of the wafer and separation of the components |
| JP3410371B2 (ja) * | 1998-08-18 | 2003-05-26 | リンテック株式会社 | ウエハ裏面研削時の表面保護シートおよびその利用方法 |
| DE19840508A1 (de) * | 1998-09-04 | 1999-12-02 | Siemens Ag | Verfahren zum Vereinzeln von Halbleiter-Bauelementen |
| US6039889A (en) * | 1999-01-12 | 2000-03-21 | Fujitsu Limited | Process flows for formation of fine structure layer pairs on flexible films |
| US6165905A (en) * | 1999-01-20 | 2000-12-26 | Philips Electronics, North America Corp. | Methods for making reliable via structures having hydrophobic inner wall surfaces |
| JP4040819B2 (ja) * | 1999-02-03 | 2008-01-30 | 株式会社東芝 | ウェーハの分割方法及び半導体装置の製造方法 |
| TW476141B (en) * | 1999-02-03 | 2002-02-11 | Toshiba Corp | Method of dicing a wafer and method of manufacturing a semiconductor device |
| JP2001085363A (ja) * | 1999-09-13 | 2001-03-30 | Mitsui High Tec Inc | 半導体装置の製造方法 |
| JP2001203176A (ja) * | 2000-01-19 | 2001-07-27 | Hitachi Cable Ltd | チップ部品の加工方法及びその装置 |
| US6509546B1 (en) * | 2000-03-15 | 2003-01-21 | International Business Machines Corporation | Laser excision of laminate chip carriers |
| JP2001284497A (ja) * | 2000-04-03 | 2001-10-12 | Fujitsu Ltd | 半導体装置及びその製造方法及び半導体チップ及びその製造方法 |
-
2002
- 2002-10-01 WO PCT/EP2002/011001 patent/WO2003028949A2/en not_active Ceased
- 2002-10-01 AT AT02800144T patent/ATE327572T1/de not_active IP Right Cessation
- 2002-10-01 EP EP06004748A patent/EP1677346B1/en not_active Expired - Lifetime
- 2002-10-01 KR KR1020047004824A patent/KR100913510B1/ko not_active Expired - Fee Related
- 2002-10-01 JP JP2003532249A patent/JP2005504445A/ja active Pending
- 2002-10-01 AU AU2002362491A patent/AU2002362491A1/en not_active Abandoned
- 2002-10-01 AT AT06004748T patent/ATE537558T1/de active
- 2002-10-01 CN CNB028193709A patent/CN100369235C/zh not_active Expired - Fee Related
- 2002-10-01 DE DE60211728T patent/DE60211728T2/de not_active Expired - Lifetime
- 2002-10-01 EP EP02800144A patent/EP1433195B1/en not_active Expired - Lifetime
- 2002-10-01 US US10/490,985 patent/US8048774B2/en not_active Expired - Fee Related
-
2009
- 2009-08-21 JP JP2009191614A patent/JP2010016392A/ja active Pending
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