JP2005292288A5 - - Google Patents

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Publication number
JP2005292288A5
JP2005292288A5 JP2004104341A JP2004104341A JP2005292288A5 JP 2005292288 A5 JP2005292288 A5 JP 2005292288A5 JP 2004104341 A JP2004104341 A JP 2004104341A JP 2004104341 A JP2004104341 A JP 2004104341A JP 2005292288 A5 JP2005292288 A5 JP 2005292288A5
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JP
Japan
Prior art keywords
resist
inorganic acid
inorganic
salt
composition according
Prior art date
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Application number
JP2004104341A
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English (en)
Japanese (ja)
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JP2005292288A (ja
JP4440689B2 (ja
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Priority claimed from JP2004104341A external-priority patent/JP4440689B2/ja
Priority to JP2004104341A priority Critical patent/JP4440689B2/ja
Priority to KR1020050025611A priority patent/KR101154836B1/ko
Priority to CNB2005100637222A priority patent/CN100559287C/zh
Priority to TW094110132A priority patent/TWI275915B/zh
Priority to US11/096,681 priority patent/US20050287480A1/en
Publication of JP2005292288A publication Critical patent/JP2005292288A/ja
Publication of JP2005292288A5 publication Critical patent/JP2005292288A5/ja
Publication of JP4440689B2 publication Critical patent/JP4440689B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004104341A 2004-03-31 2004-03-31 レジスト剥離剤組成物 Expired - Fee Related JP4440689B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004104341A JP4440689B2 (ja) 2004-03-31 2004-03-31 レジスト剥離剤組成物
KR1020050025611A KR101154836B1 (ko) 2004-03-31 2005-03-28 레지스트 박리제 조성물
CNB2005100637222A CN100559287C (zh) 2004-03-31 2005-03-30 光致抗蚀剂剥离剂组合物
TW094110132A TWI275915B (en) 2004-03-31 2005-03-30 Photoresist stripper composition
US11/096,681 US20050287480A1 (en) 2004-03-31 2005-03-31 Photoresist stripper composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004104341A JP4440689B2 (ja) 2004-03-31 2004-03-31 レジスト剥離剤組成物

Publications (3)

Publication Number Publication Date
JP2005292288A JP2005292288A (ja) 2005-10-20
JP2005292288A5 true JP2005292288A5 (enExample) 2007-05-24
JP4440689B2 JP4440689B2 (ja) 2010-03-24

Family

ID=35049827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004104341A Expired - Fee Related JP4440689B2 (ja) 2004-03-31 2004-03-31 レジスト剥離剤組成物

Country Status (5)

Country Link
US (1) US20050287480A1 (enExample)
JP (1) JP4440689B2 (enExample)
KR (1) KR101154836B1 (enExample)
CN (1) CN100559287C (enExample)
TW (1) TWI275915B (enExample)

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JP5017985B2 (ja) * 2006-09-25 2012-09-05 東ソー株式会社 レジスト除去用組成物及びレジストの除去方法
KR101341754B1 (ko) * 2006-11-13 2013-12-16 동우 화인켐 주식회사 레지스트 및 건식 식각 잔사 제거용 조성물 및 이를 이용한레지스트 및 건식 식각 잔사의 제거 방법
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KR101488265B1 (ko) * 2007-09-28 2015-02-02 삼성디스플레이 주식회사 박리 조성물 및 박리 방법
KR100919596B1 (ko) * 2008-02-21 2009-09-29 (주) 휴브글로벌 에칭 첨가제 및 이를 함유하는 에칭용 조성물
TWI460557B (zh) * 2008-03-07 2014-11-11 Wako Pure Chem Ind Ltd 半導體表面用處理劑組成物及使用半導體表面用處理劑組成物之半導體表面處理方法
CN101555029B (zh) * 2008-04-09 2011-05-04 清华大学 铝酸锌纳米材料的制备方法
CN101685274B (zh) * 2008-09-26 2012-08-22 安集微电子（上海）有限公司 一种用于厚膜光刻胶的清洗剂
WO2011027772A1 (ja) * 2009-09-02 2011-03-10 和光純薬工業株式会社 半導体表面用処理剤組成物及びそれを用いた半導体表面の処理方法
JP5646882B2 (ja) 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
JP5498768B2 (ja) * 2009-12-02 2014-05-21 東京応化工業株式会社 リソグラフィー用洗浄液及び配線形成方法
TWI444788B (zh) * 2010-01-28 2014-07-11 Everlight Chem Ind Corp 顯影液之組成物
JP5404459B2 (ja) * 2010-02-08 2014-01-29 東京応化工業株式会社 リソグラフィー用洗浄液及び配線形成方法
US20110253171A1 (en) * 2010-04-15 2011-10-20 John Moore Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication
JP5508130B2 (ja) * 2010-05-14 2014-05-28 富士フイルム株式会社 洗浄組成物、半導体装置の製造方法及び洗浄方法
JP5508158B2 (ja) * 2010-06-22 2014-05-28 富士フイルム株式会社 洗浄組成物、洗浄方法、及び、半導体装置の製造方法
JP5801594B2 (ja) * 2011-04-18 2015-10-28 富士フイルム株式会社 洗浄組成物、これを用いた洗浄方法及び半導体素子の製造方法
TWI424090B (zh) * 2011-05-06 2014-01-21 Univ Far East 回收鍍錫銅線之方法
KR101857807B1 (ko) * 2011-08-22 2018-06-19 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
CN103764874B (zh) * 2011-08-31 2016-07-27 东友精细化工有限公司 用于包括铜和钛的金属层的蚀刻液组合物
CN102436153B (zh) * 2011-10-28 2013-06-19 绍兴文理学院 印花网版感光胶剥离剂
CN102880017B (zh) * 2012-09-28 2014-07-23 京东方科技集团股份有限公司 光刻胶用剥离液组合物及其制备和应用
US9957469B2 (en) 2014-07-14 2018-05-01 Versum Materials Us, Llc Copper corrosion inhibition system
KR102242951B1 (ko) * 2014-08-12 2021-04-22 주식회사 이엔에프테크놀로지 실리콘 산화막 에칭액
JP6555273B2 (ja) * 2014-11-13 2019-08-07 三菱瓦斯化学株式会社 タングステンを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法
TWI690780B (zh) 2014-12-30 2020-04-11 美商富士軟片電子材料美國股份有限公司 用於自半導體基板去除光阻之剝離組成物
JP6217659B2 (ja) * 2015-01-28 2017-10-25 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
CN105388713A (zh) * 2015-12-16 2016-03-09 无锡吉进环保科技有限公司 一种薄膜液晶显示器中的铝膜水系光阻剥离液
KR102675757B1 (ko) * 2017-02-24 2024-06-18 동우 화인켐 주식회사 레지스트 박리액 조성물
JP7541014B2 (ja) * 2019-09-18 2024-08-27 富士フイルム株式会社 洗浄液、洗浄方法
IL301206A (en) * 2020-09-11 2023-05-01 Fujifilm Electronic Mat Usa Inc Etching compositions
KR20220058069A (ko) * 2020-10-30 2022-05-09 주식회사 이엔에프테크놀로지 세정제 조성물 및 이를 이용한 세정방법
CN113740141B (zh) * 2021-08-25 2024-07-12 有研亿金新材料有限公司 一种用于超细镍钛记忆合金丝材的金相显影液及制备方法
CN116083177B (zh) * 2023-01-31 2025-01-21 福建省佑达环保材料有限公司 一种用于半导体制程的水基去胶液

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