TW200700937A - Remover composition for photoresist of semiconductor device - Google Patents

Remover composition for photoresist of semiconductor device

Info

Publication number
TW200700937A
TW200700937A TW095112212A TW95112212A TW200700937A TW 200700937 A TW200700937 A TW 200700937A TW 095112212 A TW095112212 A TW 095112212A TW 95112212 A TW95112212 A TW 95112212A TW 200700937 A TW200700937 A TW 200700937A
Authority
TW
Taiwan
Prior art keywords
photoresist
photoresist film
remover composition
modified
water
Prior art date
Application number
TW095112212A
Other languages
Chinese (zh)
Other versions
TWI342471B (en
Inventor
Byung-Uk Kim
Suk-Il Yoon
Seong-Bae Kim
Jong-Hyun Jeong
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of TW200700937A publication Critical patent/TW200700937A/en
Application granted granted Critical
Publication of TWI342471B publication Critical patent/TWI342471B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

The present invention relates to a photoresist remover composition used in the manufacturing process of semiconductor devices. The remover composition of the present invention, which comprises an ammonium salt, a water-soluble organic amine and water, can effectively remove the photoresist film hardened and modified by hard baking, dry etching, wet etching, ashing and/or ion implantation and the photoresist film modified by the metallic byproduct etched from the metallic film under the photoresist film in a short period time, either at high temperature or low temperature, while minimizing corrosion of the metal wiring under the photoresist film.
TW095112212A 2005-04-06 2006-04-06 Remover composition for photoresist of semiconductor device TWI342471B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050028541A KR101164959B1 (en) 2005-04-06 2005-04-06 Remover composition for photoresist of semiconductor device

Publications (2)

Publication Number Publication Date
TW200700937A true TW200700937A (en) 2007-01-01
TWI342471B TWI342471B (en) 2011-05-21

Family

ID=37073693

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095112212A TWI342471B (en) 2005-04-06 2006-04-06 Remover composition for photoresist of semiconductor device

Country Status (4)

Country Link
KR (1) KR101164959B1 (en)
CN (1) CN101156111B (en)
TW (1) TWI342471B (en)
WO (1) WO2006107169A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010091045A2 (en) * 2009-02-05 2010-08-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of polymers and other organic material from a surface
BRPI1008034A2 (en) 2009-02-25 2016-03-15 Avantor Performance Mat Inc semiconductor silicon disk ion implanted photoresist cleaning compositions
CN102221791B (en) * 2011-04-29 2014-09-03 西安东旺精细化学有限公司 Photoresist stripper composition
CN102617364B (en) * 2012-03-15 2014-04-23 南京工业大学 Hydroxymethyl diamine compound and preparation method and application thereof
KR101686175B1 (en) * 2013-05-07 2016-12-13 주식회사 엘지화학 Stripper composition for removing photoresist and stripping mthod of photoresist using the same
KR102023052B1 (en) * 2014-03-26 2019-09-19 동우 화인켐 주식회사 Resist stripper composition

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08190205A (en) * 1995-01-10 1996-07-23 Mitsubishi Gas Chem Co Inc Photoresist removing agent composition and removing method
US6432209B2 (en) * 1998-03-03 2002-08-13 Silicon Valley Chemlabs Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates
US6440326B1 (en) 1998-08-13 2002-08-27 Mitsubishi Gas Chemical Company, Inc. Photoresist removing composition
US6492308B1 (en) * 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
KR20010113396A (en) * 2000-06-19 2001-12-28 주식회사 동진쎄미켐 Photoresist remover composition comprising ammonium fluoride
KR100468714B1 (en) * 2001-07-03 2005-01-29 삼성전자주식회사 Resist removing composition and resist removing method using the same
CN100338530C (en) * 2001-11-02 2007-09-19 三菱瓦斯化学株式会社 Method for releasing resist
DE10331033B4 (en) * 2002-07-12 2010-04-29 Ekc Technology K.K. R&D Business Park Bldg. D-3F, Kawasaki A manufacturing method of a semiconductor device and a cleaning composition therefor
US20040050406A1 (en) 2002-07-17 2004-03-18 Akshey Sehgal Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical

Also Published As

Publication number Publication date
KR20060106110A (en) 2006-10-12
TWI342471B (en) 2011-05-21
KR101164959B1 (en) 2012-07-12
WO2006107169A1 (en) 2006-10-12
CN101156111B (en) 2011-04-13
CN101156111A (en) 2008-04-02

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