KR102023052B1 - Resist stripper composition - Google Patents

Resist stripper composition Download PDF

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KR102023052B1
KR102023052B1 KR1020140035078A KR20140035078A KR102023052B1 KR 102023052 B1 KR102023052 B1 KR 102023052B1 KR 1020140035078 A KR1020140035078 A KR 1020140035078A KR 20140035078 A KR20140035078 A KR 20140035078A KR 102023052 B1 KR102023052 B1 KR 102023052B1
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South Korea
Prior art keywords
amine
photoresist
stripper composition
resist
resist stripper
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KR1020140035078A
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Korean (ko)
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KR20150111594A (en
Inventor
김정환
양진석
이경호
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동우 화인켐 주식회사
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Abstract

The present invention relates to a resist stripper composition, and more particularly, by including an amine oxide compound, 1,8-diazabicyclounceck-7-ene, an alkanol amine having 1 to 20 carbon atoms, and a sulfur-containing organic solvent. The present invention relates to a resist stripper composition capable of minimizing corrosion on lower metal interconnects and silicon while having excellent removal power not only for photoresist but also for modified photoresist modified by plasma gas or ions.

Description

Resist stripper composition

The present invention relates to a resist stripper composition.

Photoresist is a chemical film that can form a fine pattern pre-drawn on a photomask on a desired substrate by using a photochemical reaction by light. A photoresist is a polymer material applied to an exposure technique together with a photomask. It is recognized as a major factor that directly affects the density of a chip and determines the ultimate resolution limit. According to Moore's law (the theory that semiconductor density doubles every two years), in order to put the density of circuits increasing every year into a semiconductor of limited size, the designed circuits must be patterned smaller. Increasing semiconductor integration inevitably requires the development of new photoresists.

In order to manufacture a semiconductor device or a high-resolution flat panel display, a photolithography process using such a photoresist to form fine wiring on a substrate is generally used, which utilizes the thermal, mechanical, and chemical properties of the photoresist to form a photolithography on the substrate. After applying the resist, it is exposed to a light of a certain wavelength (exposure), it is a method of performing a dry or wet etching.

In the fine patterning technology using photoresist, a field that is important with the development of a new photoresist is a resist stripper or a photoresist remover. After the process is finished, the photoresist must be removed by a solvent called stripper or photoresist remover, which is an unnecessary photoresist layer after the etching process and metal residue or deteriorated photo residues remaining on the substrate through etching and washing processes. This is because resist residues create problems such as lowering the yield of semiconductor manufacturing.

Typical dry etching methods include plasma etching, ion implantation etching, and the like. In the case of such plasma etching, an etching process using a gas phase-solid reaction between a plasma gas and a material film such as a conductive layer is performed. Since the ions and radicals of the plasma etching gas chemically react with the photoresist to cure and denature the photoresist film, the removal becomes difficult. In addition, the ion implantation process is a process of diffusing elements such as phosphorous, arsenic, boron, etc. in order to impart conductivity to a specific region of the substrate in the manufacturing process of semiconductor / LED / LCD device, the ions are chemical reaction with the positive photoresist It is also difficult to remove because it causes degeneration.

Therefore, a considerable level of peeling is performed with respect to the removal of the etching residue and the excellent peeling force against the deteriorated photoresist residue, specifically, the removal of the etching residue occurring after the dry etching process, the corrosion resistance to the lower metal wiring and the silicon, and the like. Characteristics are required.

Korean Patent Publication No. 2011-0130563 discloses a photoresist stripper composition.

Korean Laid-Open Patent No. 2011-0130563

An object of the present invention is to provide a resist stripper composition having excellent removal ability even for a modified photoresist.

It is an object of the present invention to provide a resist stripper composition which can minimize corrosion to lower metal interconnects and silicon.

1. A resist stripper composition comprising an amine oxide compound, 1,8-diazabicycloundec-7-ene, an alkanol amine having 1 to 20 carbon atoms, and a sulfur-containing organic solvent.

2. In the above 1, the amine oxide compound is one selected from the group consisting of pyridine-N-oxide, 4-nitropyridine-N-oxide, trimethylamine-N-oxide and N-methylmorpholine-N-oxide The resist stripper composition which is the above.

3. In the above 1, wherein the alkanol amine is at least one selected from the group consisting of ethanol amine, diethanol amine, triethanol amine, amino ethoxy ethanol, amino ethoxy ethanol amine and methyl diethanol amine.

4. In the above 1, wherein the sulfur-containing organic solvent is at least one resist stripping solution selected from the group consisting of dimethyl sulfoxide, diethyl sulfoxide, dipropyl sulfoxide, dimethyl sulfone, diethyl sulfone, dipropyl sulfone and sulfolane Composition.

5. according to the above 1, the resist stripper composition further comprises at least one corrosion inhibitor selected from the group consisting of organic acids, organic acid salts, phosphate salts and sulfates.

6. according to the above 1, 5 to 30% by weight of the amine oxide compound, 1 to 10% by weight of 1,8-diazabicycloundec-7-ene, 10 to 50% by weight of alkanol amine, 10 to 50 sulfur-containing organic solvent A resist stripper composition comprising weight percent and residual amount of water.

7. The resist stripper composition according to the above 1, wherein the resist is a resist modified by dry etching.

The resist stripper composition of the present invention has excellent removal power not only for general photoresist but also for modified photoresist deteriorated by plasma gas or ions.

The resist stripper composition of the present invention can minimize corrosion to the lower metallization and silicon.

The present invention includes an amine oxide compound, 1,8-diazabicycloundec-7-ene, an alkanol amine having 1 to 20 carbon atoms, and a sulfur-containing organic solvent, thereby deteriorating by plasma gas or ions as well as general photoresist. The present invention relates to a resist stripper composition having excellent removal ability for the modified photoresist, while minimizing corrosion to the lower metallization and silicon.

The modified photoresist herein refers to a photoresist cured and modified by chemical reaction with ions and radicals of the plasma etching gas during plasma etching, and a photoresist modified by chemical reaction with ions during ion implantation process. .

In the case of a conventional resist stripper composition, such a modified photoresist has a problem that the removal force is reduced or the resist stripping force is excessively increased to damage the lower metal wiring, etc., but the resist stripper composition of the present invention is applied to the modified photoresist. The damage to the lower wiring can be minimized at the same time as it has excellent removal power.

Hereinafter, the present invention will be described in detail.

The resist stripper composition of the present invention contains an amine oxide compound, 1,8-diazabicycloundec-7-ene, an alkanol amine having 1 to 20 carbon atoms, and a sulfur-containing organic solvent.

The amine oxide compound serves to remove the modified photoresist.

The amine oxide compound is not particularly limited, and examples thereof include pyridine-N-oxide, 4-nitropyridine-N-oxide, trimethylamine-N-oxide, N-methylmorpholine-N-oxide, and the like. These can be used individually or in mixture of 2 or more types.

The content of the amine oxide compound is not particularly limited, and may be included, for example, in 5 to 30% by weight of the total weight of the composition. When the content is less than 5% by weight, the removal power of the modified photoresist may be insufficient, and when the content is more than 30% by weight, the degree of improvement of the removal power of the modified photoresist is insufficient as the content is increased. It may be included in an amount of 10 to 25% by weight in that it has an excellent general photoresist removal and anticorrosion at the same time by including an appropriate amount of other components to be described later while having an excellent modified photoresist removal.

1,8-diazabicyclodek-7-ene is a component that improves the alkalinity of the composition, and improves the solubility of general photoresist, and can be used in combination with an amine oxide compound to significantly improve the denatured photoresist removal ability. In addition, since amine oxide and 1,8-diazabicyclic deck-7-ene do not directly generate hydroxide ions, such as alkylammonium hydroxide, which is conventionally used for removing the modified photoresist, corrosion of the lower wiring can be reduced. have.

The content of 1,8-diazabicyclodec-7-ene is not particularly limited, and may be included, for example, in an amount of 1 to 10% by weight of the total weight of the composition. If the content is less than 1% by weight, the alkalinity improvement degree of the composition is insufficient, and the effect of improving the modified photoresist removal power may be insignificant. If the content is more than 10% by weight, the improved effect of the modified photoresist removal power due to the increase in content is minimal, and corrosion to the metal wiring May cause. It may be included in an amount of 1 to 5% by weight in that it has an excellent general photoresist removal and anticorrosion at the same time by including an appropriate amount of other components to be described later while having an excellent modified photoresist removal.

The alkanol amine is a component for removing the general photoresist, and the composition of the present invention includes an alkanol amine together with the above-described amine oxide and 1,8-diazabicyclodececk-7-ene, thereby modifying with general photoresist. The photoresist can be removed together.

Alkanol amines may be alkanol amines commonly used in the art having 1 to 20 carbon atoms, specifically, ethanol amine, diethanol amine, triethanol amine, aminoethoxyethanol, aminoethoxyethanolamine, methyldiethanol Amines and the like. These can be used individually or in mixture of 2 or more types.

The content of the alkanol amine is not particularly limited and may be included, for example, in 10 to 50% by weight of the total weight of the composition. If the content is less than 10% by weight, the general photoresist removal power may be insignificant. If the content is more than 50% by weight, the general photoresist removal power may be insignificant due to the increase in content. Can be. It may be included in an amount of 20 to 40% by weight in that it has an excellent modified photoresist removal and anticorrosion at the same time by including an appropriate amount of other components while having a good general photoresist removal.

The resist stripper composition of the present invention does not contain a component that can cause serious corrosion in metal wirings such as hydroxide ions, and thus has less corrosion on the lower wirings. Can be reduced.

The sulfur-containing organic solvent is not particularly limited, and examples thereof include dimethyl sulfoxide, diethyl sulfoxide, dipropyl sulfoxide, dimethyl sulfone, diethyl sulfone, dipropyl sulfone, and sulfolane. These can be used individually or in mixture of 2 or more types.

The content of the sulfur-containing organic solvent is not particularly limited, and may be included, for example, in 10 to 50% by weight of the total weight of the composition. If the content is less than 10% by weight, the photoresist may not have sufficient dissolving power, and the metal wire and silicon oxide may have minimal corrosion inhibitory effects. If the content is more than 50% by weight, the content of other components may be reduced, thereby reducing general photoresist and modified photoresist. Removal force may be reduced. It may be included in an amount of 20 to 40% by weight in that it has an excellent anti-corrosion ability and at the same time includes an appropriate amount of the other components described above, and also has excellent removal power for the general photoresist and the modified photoresist.

Optionally, the resist stripper composition of the present invention may further comprise a metal corrosion inhibitor.

Metal corrosion inhibitor is not specifically limited, For example, acetic acid, imino diacetic acid, ethylenediamine tetraacetic acid, butanoic acid, citric acid, iso citric acid, formic acid, gluconic acid, glycolic acid, malonic acid, oxalic acid, pentanic acid, sulfobenzoic acid, Organic acids such as succinic acid, sulfosuccinic acid, salicylic acid, sulfosalicylic acid, benzoic acid, lactic acid, glyceric acid, malic acid, tartaric acid and propene acid;

Organic acid salts such as potassium salts, sodium salts and ammonium salts of the aforementioned organic acids;

Trimethyl phosphate, triethyl phosphate, tripropyl phosphate, tributyl phosphate, triphenyl phosphate, diethyl phosphate, dibutyl phosphate, diphenyl phosphate, dibenzyl phosphate, ammonium phosphate, triethyl ammonium phosphate, tetrabutylammonium phosphate, dihexa Phosphates such as decyl phosphate, triisopropyl phosphate and ethylhexyl phosphate;

Sulfates such as hydroxylamine sulfate, dimethyl sulfate, diethyl sulfate, dipropyl sulfate, ammonium sulfate, tetramethylammonium sulfate, tetrabutylammonium sulfate, aniline sulfate and triaminopyrimidine sulfate; Etc. can be mentioned. These can be used individually or in mixture of 2 or more types.

Metal corrosion inhibitors are preferably included in less than 5% by weight of the total weight of the composition.

In the resist stripper composition of the present invention, after appropriately adopting the above components according to specific needs, water is added to adjust the overall composition so that the remaining amount of the total composition is occupied by water. Preferably the components are adjusted to have the aforementioned content ranges.

Although the kind of water is not specifically limited, It is preferable that it is deionized distilled water, More preferably, it is good that the specific resistance value is 18 Pa.cm or more as deionized distilled water for a semiconductor process.

The pH of the resist stripper composition of the present invention is not particularly limited, and for example, the pH may be 11.5 or more. When the pH is 11.5 or more, it may have excellent removal ability for general photoresist and modified photoresist. In view of suppressing corrosion of the lower metal wiring and silicon, the pH may preferably be 11.5 to 12.5.

The pH can be controlled primarily by controlling the content of 1,8-diazabicyclodecks-7-ene, and the higher the amine oxide content in terms of excellent removal to the modified photoresist if the pH is maintained above 11.5, desirable.

Hereinafter, preferred examples are provided to aid the understanding of the present invention, but these examples are merely illustrative of the present invention and are not intended to limit the scope of the appended claims, which are within the scope and spirit of the present invention. It is apparent to those skilled in the art that various changes and modifications can be made to the present invention, and such modifications and changes belong to the appended claims.

Example  And Comparative example

The resist stripper composition was prepared by mixing according to the composition and content (% by weight) described in Table 1 below and adding water to a total weight of 100%.

division Amino oxide
compound
(A) DBU
(B) Alkanol amines
(C) Organic solvents
(D) corrosion
Inhibitor
(E) TMAH
(F) ingredient content content ingredient content ingredient content content content Example 1 A-1 10 5 C-1 20 D-1 30 One - Example 2 A-1 25 One C-1 20 D-1 20 One - Example 3 A-2 15 2 C-2 25 D-1 30 One - Example 4 A-2 15 2 C-2 40 D-2 20 One - Example 5 A-2 10 3 C-2 30 D-2 40 One - Example 6 A-2 15 3 C-2 30 D-1 30 One - Example 7 A-2 10 3 C-2 30 D-1 20 - - Example 8 A-2 10 3 C-2 30 D-1 40 - - Example 9 A-2 32 One C-1 20 D-1 40 - - Example 10 A-2 15 12 C-1 20 D-1 40 - - Example 11 A-2 20 3 C-1 55 D-1 8 - - Comparative Example 1 A-2 - One C-1 20 D-1 20 - - Comparative Example 2 A-2 5 - C-1 20 D-1 20 - - Comparative Example 3 A-2 5 One C-1 - D-1 20 - - Comparative Example 4 A-2 5 One C-1 20 D-1 - - - Comparative Example 5 A-2 5 One C-1 20 D-3 20 - - Comparative Example 6 A-2 5 One C-1 20 D-4 20 - - Comparative Example 7 A-2 5 One C-1 20 D-5 20 - - Comparative Example 8 A-2 5 One C-1 20 D-6 20 - - Comparative Example 9 A-2 6.75 15 C-3 15 D-4 5 - 1.85 Comparative Example 10 A-2 - 13 C-1 30 D-1 40 - - Comparative Example 11 A-2 13 - C-1 30 D-1 40 - - Comparative Example 12 A-2 30 13 C-1 - D-1 40 - - Comparative Example 13 A-2 10 3 C-1 30 D-3 40 - - Comparative Example 14 A-2 10 3 C-1 30 D-3 40 One - Comparative Example 15 A-2 10 - C-1 30 D-1 40 One 3 A-1: trimethylamine-N-oxide
A-2: N-methylmorpholine-N-oxide
B: 1,8-diazabicycle deck-7-yen (DBU)
C-1: monoethanolamine
C-2: aminoethoxyethanol
C-3: dimethyl diglycolamine
D-1: dimethyl sulfoxide
D-2: sulfolane
D-3: Ethylene Glycol
D-4: Butyl diglycol
D-5: n-methylpyrrolidone
D-6: Propylene Carbonate
E: ammonium phosphate
F: tetramethylammonium hydroxide (TMAH)

Experimental Example

A photoresist (DWG-520, Dongwoo Finechem, 193 nm) was applied on the aluminum film deposited on the silicon wafer, and patterned through exposure and development, followed by plasma etching.

Thereafter, the substrate was immersed in water after immersion for 5 minutes in the compositions of Examples and Comparative Examples, each of which was heated to 70 ° C.

However, the composition of Comparative Example 8 was produced and suspended at 70 ℃. This is believed to be due to the poor stability of the composition due to the reaction of the carbonate structure with the amine. Accordingly, the experiment was performed except for the composition of Comparative Example 8.

(One) Photoresist Removal  evaluation

The surface of the substrate was observed by SEM, and photoresist removal power was evaluated according to the following criteria, and the results are shown in Table 2.

A +: removed more than 95%

A-: Removed more than 90%

B +: removed more than 85%

B-: 80% or more removed

C +: removed more than 75%

C-: removed more than 70%

D: removed below 70%

(2) aluminum wiring Anticorrosion  evaluation

The surface of the substrate was observed by SEM to evaluate the aluminum wiring corrosion resistance according to the following criteria, and the results are shown in Table 2.

◎: no corrosion at all

○: almost no corrosion

△: surface roughness occurrence

Х: Etching occurs

(3) silicon oxide Anticorrosion  evaluation

The surface of the substrate was observed by SEM to evaluate the silicon oxide wiring corrosion resistance according to the following criteria, and the results are shown in Table 2.

◎: no attack at all

○: almost no attack

△: surface roughness occurrence

Х: Etching occurs

division Photoresist
Removability Evaluation Aluminum wiring
Corrosion rating Silicon oxide
Corrosion rating Example 1 A- ◎ ◎ Example 2 A + ◎ ◎ Example 3 A + ◎ ◎ Example 4 A + ◎ ◎ Example 5 A- ◎ ◎ Example 6 A + ◎ ◎ Example 7 A- ○ ○ Example 8 A- ◎ ◎ Example 9 A + ○ ○ Example 10 A + ○ ○ Example 11 A + ○ ○ Comparative Example 1 C- ○ ○ Comparative Example 2 C- ○ ○ Comparative Example 3 C- ○ ○ Comparative Example 4 C + ○ ○ Comparative Example 5 C + △ △ Comparative Example 6 C + △ △ Comparative Example 7 C + △ △ Comparative Example 8 - - - Comparative Example 9 B- X X Comparative Example 10 C + ○ ○ Comparative Example 11 C + ○ ○ Comparative Example 12 C- △ ○ Comparative Example 13 A- △ X Comparative Example 14 A- △ △ Comparative Example 15 B- ○ X

Referring to Table 2 above, the resist stripper compositions of Examples 1 to 11 showed excellent removal power for both the general photoresist and the modified photoresist, and most of the photoresist was removed. In addition, it exhibited excellent corrosion resistance and almost no corrosion on aluminum wiring and silicon oxide.

However, the resist stripper compositions of Comparative Examples 1 to 15 were inferior in resist removal ability or significantly in anticorrosive power.

Claims (7)

A resist stripper composition comprising an amine oxide compound, 1,8-diazabicyclounceck-7-ene, an alkanol amine having 1 to 20 carbon atoms, and a sulfur-containing organic solvent.
The method of claim 1, wherein the amine oxide compound is at least one resist selected from the group consisting of pyridine-N-oxide, 4-nitropyridine-N-oxide, trimethylamine-N-oxide, and N-methylmorpholine-N-oxide. Stripper composition.
The resist stripper composition according to claim 1, wherein the alkanol amine is at least one selected from the group consisting of ethanol amine, diethanol amine, triethanol amine, aminoethoxyethanol, aminoethoxyethanolamine and methyldiethanolamine.
The resist stripper composition according to claim 1, wherein the sulfur-containing organic solvent is at least one selected from the group consisting of dimethyl sulfoxide, diethyl sulfoxide, dipropyl sulfoxide, dimethyl sulfone, diethyl sulfone, dipropyl sulfone, and sulfolane.
The resist stripper composition according to claim 1, further comprising at least one corrosion inhibitor selected from the group consisting of organic acids, organic acid salts, phosphate salts, and sulfate salts.
The method according to claim 1, 5 to 30% by weight of the amine oxide compound, 1 to 10% by weight of 1,8-diazabicycloundec-7-ene, 10 to 50% by weight alkanol amine, 10 to 50% by weight sulfur-containing organic solvent And a residual amount of water.
The resist stripper composition according to claim 1, wherein the resist is a resist modified by dry etching.
KR1020140035078A 2014-03-26 2014-03-26 Resist stripper composition KR102023052B1 (en)

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Publication number Priority date Publication date Assignee Title
KR101164959B1 (en) * 2005-04-06 2012-07-12 주식회사 동진쎄미켐 Remover composition for photoresist of semiconductor device
KR101221560B1 (en) * 2005-09-02 2013-01-14 주식회사 동진쎄미켐 Remover composition for semiconductor device for removing degenerated photoresist
KR101491852B1 (en) * 2008-01-21 2015-02-09 동우 화인켐 주식회사 Stripper composition for removal photoresist residue and stripping method of photoresists using the same
KR101169332B1 (en) * 2010-05-12 2012-07-30 주식회사 이엔에프테크놀로지 Photoresist stripper composition
KR101691850B1 (en) 2010-05-28 2017-01-03 (주)디엔에프 A composition for striping of photoresist

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