KR101164959B1 - Remover composition for photoresist of semiconductor device - Google Patents

Abstract

The present invention relates to a stripper composition for removing a photoresist for a semiconductor device, the stripper composition comprising an ammonium salt, a water-soluble organic amine, and water, hard bake, dry etching, wet etching, ashing and / or In addition to the photoresist film cured and modified by the ion implantation process, the photoresist film modified by the metal by-products etched from the lower metal film during the process can be easily removed at a high temperature and a low temperature within a short time. In this case, corrosion of the lower metal wiring during the photoresist removal process can be minimized.

Photoresist Stripper Composition, Ammonium Salt

Description

Release liquid composition for removing the photoresist for semiconductor devices {Remover composition for photoresist of semiconductor device}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stripper composition for removing photoresist in the process of manufacturing semiconductor devices such as integrated circuits (ICs), high integrated circuits (LSI), ultra high integrated circuits (VLSI), and the like.

In general, a semiconductor device manufacturing process is performed by forming a photoresist pattern on a conductive layer formed on a semiconductor substrate, and then etching the conductive layer in a portion not covered by the pattern by using the pattern as a mask to remove the conductive layer pattern. It includes a lot of processes to form. The photoresist pattern used as the mask should be removed on the conductive layer by a photoresist stripper in the cleaning step after the conductive layer pattern forming step. By the way, in the recent semiconductor element manufacturing process, since the conductive layer etching process for forming a conductive layer pattern mainly consists of a dry etching process, it becomes difficult to remove a photoresist in a subsequent cleaning process.

Phenol type photoresist stripping liquid was used as a photoresist stripping liquid conventionally used. However, the phenolic photoresist stripper cannot remove the photoresist film sufficiently subjected to the dry etching process or the ion implantation process, and it stably performs the cleaning process such as requiring a high temperature of 100 ° C. or more and a long immersion time. Since it is impossible to do this, the defect rate of the semiconductor element is increased. For this reason, the phenolic photoresist stripping liquid is rarely used in production at present.

Also recently proposed is a photoresist stripper composition consisting of alkanol amines and diethylene glycol monoalkyl ethers. The photoresist stripper composition has been widely used because of its low odor and toxicity and exhibits effective performance on most photoresist films. However, it has been found that the stripper composition still does not satisfactorily remove the photoresist film exposed to the plasma etching gas or ion beam in the dry etching process or the ion implantation process, thereby removing the photoresist film modified by the dry etching and ion implantation process. There is a need for development of a new photoresist stripper that can be effectively removed. In addition, such alkanol amine type photoresist strippers often cause problems of severe corrosion on aluminum substrates.

On the other hand, the corrosion that occurs during the photolithography process is believed to be due to the ionization of water by alkanolamine when the residual stripper solution that may remain on the substrate surface after the photoresist removal process is washed with water. In other words, if water is used in combination with alkanol amines, corrosion cannot be resolved without preservatives.

In addition, other mechanisms of metal corrosion produce metal halides (eg aluminum chloride), which are likely to be produced as plasma-etching byproducts. The metal halide may cause corrosion of the substrate when contacted with water during cleaning after the photoresist removal process. Another corrosion mechanism is observed by alloys (eg Al-Cu-Si) during water cleaning or during water cleaning after the photoresist removal process. This type of corrosion is generally observed locally, and fitting corrosion occurs. Fitting corrosion refers to galvanic electrochemical reactions between two metals with different electronegativities.

In addition, as described above, the photoresist film that has undergone the ion implantation process is difficult to remove with a photoresist stripping solution, and particularly, in order to form source / drain regions in the manufacture of ultra-high integrated circuits, a high dose amount of ions is required. It is more difficult to remove the photoresist film that has undergone the implantation process. In the ion implantation process, the photoresist film hardens the surface of the photoresist due to the high dose amount and the heat of reaction caused by the high energy ion beam. At the same time, puffing of the photoresist may occur, resulting in photoresist residues. Usually, the annealing semiconductor wafer is heat-treated at 200 degreeC or more high temperature. At this time, the solvent remaining inside the photoresist must be vaporized and discharged. Since the hardened layer exists on the surface of the photoresist after the high dose amount of the ion implantation process, this becomes impossible.

Therefore, as the ashing progresses, a phenomenon in which the surface of the photoresist film is ruptured by the solvent remaining therein as the internal pressure inside the photoresist film increases, is called a puffing phenomenon. The surface hardened layer scattered by this puffing phenomenon becomes a residue and is difficult to remove. In addition, since the cured layer on the surface of the photoresist is formed by heat, a dopant, which is an impurity ion, is substituted in the photoresist molecular structure to cause a crosslinking reaction, and the site is oxidized by oxygen plasma. The oxidized photoresist is converted into residues and particles, which are also contaminants, and cause a decrease in production yield in the manufacture of ultra-high integrated circuits.

Therefore, in order to effectively remove the cured photoresist layer hardened through the ion implantation process and ashing process, a stripper composition using ammonium fluoride has been proposed in Japanese Patent Application Laid-Open No. 9-197681. In the above methods, the stripper composition contained 0.2-8 wt% of ammonium fluoride, a water-soluble organic solvent, water and a corrosion inhibitor, and the pH of the composition was limited to 5-8.

However, the stripper composition is limited to a low temperature process in order not to cause corrosion of the underlying metal film, and has a limitation in removing particles caused during semiconductor processing due to neutral pH.

In order to solve the problems of the prior art, an object of the present invention is a photoresist film cured by a dry etching, ashing and ion implantation process, and a photo deteriorated by metallic by-products etched from the metal film of the lower part of the process It is to provide a photoresist stripper composition which can easily remove a resist film within a short time and can minimize corrosion of the lower metal wiring during the photoresist removal process.

In order to achieve the above object, the present invention provides a stripper composition for removing a photoresist comprising an ammonium salt, a water-soluble organic amine, and water.

Preferably, the stripper composition may further include a water-soluble organic solvent and a corrosion inhibitor.

Hereinafter, the present invention will be described in detail.

The present invention has been etched from the photoresist film cured by the dry etching, ashing and ion implantation process, which has been recently emphasized due to the miniaturization and integration of circuit patterns in the photolithography process and the metal film of the lower part of the process. The present invention relates to a photoresist stripper composition capable of easily removing a photoresist film deteriorated by metallic by-products and minimizing corrosion of a lower metal wiring during a photoresist removal process.

In the photoresist stripper composition according to the present invention, the ammonium salt dissociates in water and penetrates into the photoresist denatured in the ionic phase to remove the dopant ions penetrated during the dry etching process in the photoresist. .

The ammonium salt used in the present invention is at least one compound selected from the group consisting of ammonium nitrate, ammonium formate, ammonium carbonate, ammonium acetate, ammonium thiocyanate, ammonium sulfate, ammonium sulfide, ammonium oxalate, and ammonium thiosulfate Is preferably.

In the stripper composition of the present invention, the content of ammonium salt is preferably included in 0.5 to 20% by weight, more preferably 2.5 to 10% by weight based on the total weight of the stripper composition. At this time, when the content of the ammonium salt compound is less than 0.1% by weight, it is difficult to completely remove the modified photoresist by a preceding process, and when the amount of the ammonium salt compound is more than 20% by weight, the corrosion resistance of the lower metal wiring becomes larger and the peeling performance is further achieved. There is a problem that does not increase.

In addition, the water-soluble organic amine compound is monoethanolamine, isopropanolamine, aminoethoxy ethanol, n-methylethanolamine, dimethylethanolamine, diethylethanolamine, 2-aminoethylaminoethanol, aminoethylpiperazine, aminopropyl pipepe Lazine, hydroxyethylpiperazine, 1-amino-4-methylpiperazine, 2-methylpiperazine, 1-methylpiperazine, 1-benzylpiperazine, 2-phenylpiperazine, 1-aminoethylpiperazine, It is preferred that it is at least one compound selected from the group consisting of 1-aminopiperidine, and 1-aminomethylpiperidine.

The content of the water-soluble organic amine compound is preferably included in an amount of 7 to 50% by weight based on the total weight of the entire stripper composition. If the content of the water-soluble organic amine compound is less than 7% by weight, it is difficult to completely remove the photoresist modified by the preceding process, and when the content of the water-soluble organic amine compound exceeds 50% by weight, the corrosiveness to the underlying metal wiring film quality is increased.

In the photoresist stripper composition according to the present invention, water is preferably pure water (deionized water) filtered through an ion exchange resin, and more preferably, ultrapure water having a specific resistance of 18 megohms or more is used.

In the photoresist stripper composition according to the present invention, the water content is preferably 5 to 80% by weight, more preferably 15 to 55% by weight. If the content of water in the photoresist stripper composition according to the present invention is less than 5% by weight, the activity of the ammonium salt is reduced and the ability to remove the photoresist severely deteriorated by the metallic by-products generated after the ashing process is deteriorated. In addition, when the content of water exceeds 80% by weight, there is a risk of corrosion of the lower metal wiring during the removal process, and the amount of other components is relatively reduced, thereby reducing the ability to remove the deteriorated photoresist.

In addition, the photoresist stripper composition of the present invention preferably further contains a water-soluble organic solvent and a corrosion inhibitor.

The water-soluble organic solvent is one selected from the group consisting of dimethyl sulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc), dimethylformamide (DMF), and dimethylimizolidone (DMI). It is preferable that it is the above-mentioned polar organic solvent.

More specifically, the solvent whose dipole moment is 3.0 or more is preferable among the said water-soluble polar organic solvent, The solvent whose dipole moment is 4.0 or more is more preferable. The dipole moment indicates the polarity of the solvent, and the larger the value, the higher the polarity. The higher the dipole moment value of the polar organic solvent, the better the removal performance and dissolution performance of the photoresist stripper composition according to the present invention. In addition, the water-soluble polar solvent has a boiling point of preferably 150 ° C. or higher and more preferably 180 ° C. or higher in view of volatility.

The content of the water-soluble polar solvent is preferably included in an amount of 12 to 60% by weight based on the total weight of the entire stripper composition. If the content of the water-soluble polar solvent is less than 12% by weight, the dissolving ability of the photoresist film cured in the previous step is lowered, and if the content of the other composition is reduced above 60% by weight, it is difficult to remove the modified photoresist film.

As the corrosion inhibitor, it is preferable to use a phenolic compound containing at least one hydroxyl group represented by the following formula (1).

(Formula 1)

Wherein R ₁ , R ₂ , R ₃ , and R ₄ are each independently hydrogen, a hydroxyl group, an alkyl having 1 to 12 carbon atoms, or an alkanol group, and A is COOR ₅ , wherein R ₅ is hydrogen or 1 to 12 carbon atoms Alkyl group), carboxyl group, aldehyde, amide, hydrogen, hydroxyl group, alkyl having 1 to 12 carbon atoms, or an alkanol group.

More preferably, the corrosion inhibitor is A in formula 1 is COOR ₅ (wherein R ₅ is hydrogen or an alkyl group having 1 to 12 carbon atoms). Examples of the phenolic compound containing at least one hydroxyl group include one or more selected from catechol, pyrocatechol, methyl gallate, gallic acid, 3,4-dihydrooxybenzoic acid, methyl catechol, and the like. .

The phenolic compound containing at least one hydroxyl group is a photoresist stripper and an electron exchange with a metal in which the polar functional groups in the benzene ring are chemically and physically weakly bonded to the metal or silicon, and serve as an electrolyte. Prevents the source. In particular, the higher the molecular weight and polarity of the compound having a hydroxyl group, and the more the compound possessing such functional groups, the greater the effect.

In addition, the phenolic compound not only functions to prevent corrosion, but also exhibits a function of helping to dissolve the photoresist in the stripping solution while forming a ligand bond with a metal or halogen component inside the modified photoresist while having a chelating effect. do.

The content of such a phenolic compound is preferably included in 0.4 to 10% by weight based on the total weight of the stripper composition. When the content of the phenolic compound is less than 0.4% by weight, it is impossible to properly perform the role of corrosion protection in the photoresist stripping solution containing water and amine. If the content of the phenolic compound exceeds 10% by weight, the chemical and physical adsorption becomes more severe and denatured. There is a problem that the function of removing the photoresist is deteriorated.

The photoresist stripper composition of the present invention having the composition as described above can be easily removed even for a photoresist modified only thermally. That is, the photoresist stripper composition according to the present invention can be easily used to remove the photoresist film generated in the manufacturing process of the semiconductor device. More preferably, the stripper composition of the present invention is not only a photoresist film subjected to a wet etching process, but also a photoresist film cured by a dry etching, ashing and ion implantation process, and a metal film of the lower part of the process. The photoresist film modified by the resulting metallic by-products can be easily removed in a short time. The stripper composition of the present invention can minimize the corrosion of the lower metal wirings during the photoresist removal process, and in particular, minimize the side fitting phenomenon seen in Al alloys such as Al, Al-Si, and Al-Si-Cu. can do. In addition, by completely dissolving the denatured photoresist in solution, it is possible to eliminate the phenomenon that the remaining photoresist mixed in the remover is precipitated and re-deposited on the surface of the substrate.

Thus, the stripper composition of the present invention can be used to strip off the deteriorated or cured photoresist that occurs during the wet or dry etching process of a substrate formed of a multi-junction or single metal interconnect and an inorganic material layer.

Hereinafter, the present invention will be described in more detail with reference to Examples, but the scope of the present invention is not limited to the following Examples. In the following examples, unless stated otherwise, percentages and mixing ratios are by weight.

(Examples 1 to 12 and Comparative Examples 1 to 3)

To prepare a photoresist stripper composition by mixing each component having a composition and content as shown in Table 1.

[Table 1]

Photoresist Remover Composition Ammonium salt water Organic solvent Amine Corrosion inhibitor Kinds amount amount Kinds amount Kinds amount Kinds amount Example 1 NH ₄ NO ₃ 5 50 DMSO 30 MEA 13 Pyro 2 Example 2 NH ₄ NO ₃ 1.5 50 DMSO 30 MEA 16.5 Pyro 2 Example 3 NH ₄ NO ₃ 1.5 50 HEP 47.5 Pyro 2 Example 4 NH ₄ NO ₃ 1.5 50 DMSO 30 nMEA 16.5 Pyro 2 Example 5 NH ₄ NO ₃ 5 50 DMSO 30 MEA 13 MG 2 Example 6 CH ₃ COONH ₄ 1.5 50 DMSO 30 MEA 16.5 Pyro 2 Example 7 (NH ₄ ) ₂ SO ₄ 1.5 50 DMSO 30 MEA 16.5 Pyro 2 Example 8 (NH ₄ ) ₂ CO ₃ 1.5 50 DMSO 30 MEA 16.5 Pyro 2 Example 9 (NH ₄ ) ₂ S 1.5 50 DMSO 30 MEA 16.5 Pyro 2 Example 10 NH ₄ SCN 1.5 50 DMSO 30 MEA 16.5 Pyro 2 Example 11 NH ₄ NO ₃ One 50 HEP 49 Example 12 CH ₃ COONH ₄ One 50 HEP 49 Comparative Example 1 NH ₄ NO ₃ 5 50 DMSO 43 Comparative Example 2 20 DMSO 55 MEA 20 Catechol 5 Comparative Example 3 HDA 25 40 MEA 30 Catechol 5

(In Table 1, HEP: hydroxyethylpiperazine, Pyro: pyrocatechol, MG: methyl gallate, MEA: monoethanol amine, nMEA: normal-methylethanol amine. HDA: hydroxyl amine)

(Test example)

In Examples and Comparative Examples of the present invention, performance evaluation of the photoresist remover composition was performed by the following method.

(1) Deteriorated photoresist removal test and metal film corrosion test

Preparation of Specimen A

An aluminum or aluminum alloy was deposited as the bottom film, and a titanium nitride film as the top film, and the surface of the 4-inch silicon wafer was deposited from 2000 to 200 mm in order from the bottom, respectively. A positively used photoresist (trade name: DPR-i900, manufactured by Dongjin Semichem Co., Ltd.), which was used in general, was spin-coated on the surface of the silicon wafer and coated so that the final film thickness was 1.2 mu m. Subsequently, the test mask was placed on the photoresist film, exposed to light, developed with a developing solution, and the patterned specimen was hard baked at 120 ° C. for 100 seconds. The photoresist pattern formed on the specimen was etched using a CHF ₃ gas in a dry etching apparatus (Plasma Technology Co., Ltd., model name: RIE-80) to etch the lower titanium nitride film and aluminum alloy film not covered by the photoresist pattern. . Subsequently, the specimen was completed by removing most of the photoresist using an ashing apparatus using an O ₂ plasma.

Specimen B Manufacturing

Tetraethoxysilane (hereinafter referred to as TEOS), which is a kind of insulating film, was deposited on a surface of a 4-inch silicon wafer at 5000 kW using PVD equipment. A positively used photoresist (trade name: DPR-i900, manufactured by Dongjin Semichem Co., Ltd.), which was used in general, was spin-coated on the surface of the silicon wafer, and was applied so that the final film thickness was 1.2 mu m. Subsequently, the test mask was placed on the photoresist film, exposed to light, developed with a developer, and the patterned specimen was hard baked at 120 ° C. for 100 seconds. The photoresist pattern formed on the specimen was etched with a dry etching apparatus (Plasma Technology, Model: RIE-80) using a CHF ₃ gas to etch the lower TEOS film not covered by the photoresist pattern. Subsequently, most of the photoresist was removed using an ashing apparatus using an O ₂ plasma to complete the specimen.

<Denatured Photoresist Removal Test>

The specimens A and B were immersed in the photoresist stripper composition at a temperature of 40 ° C. to 70 ° C. for 30 minutes, respectively. Subsequently, the specimen was removed from the photoresist stripper composition, washed with ultrapure water and dried with nitrogen gas. ) To evaluate photoresist removal performance, and the results are shown in Table 2 below.

Metal Film Corrosion Test

The specimen A was immersed in the photoresist stripper composition at a temperature of 40 ° C. to 70 ° C. for 30 minutes each. Subsequently, the specimen was removed from the photoresist stripper composition, washed with ultrapure water and dried with nitrogen gas. The photoresist removal performance was evaluated by inspection (SEM), and the results are shown in Table 3 below.

(2) Removal test of the photoresist film denatured by heat not subjected to ashing process

Specimen C Manufacturing

A positive photoresist (trade name: DPR-i900, manufactured by Dongjin Semichem Co., Ltd.) commonly used on the surface of a 4 inch silicon wafer was spin-coated to apply a final film thickness of 1.2 mu m. Subsequently, the photoresist film was pre-baked at 100 ° C. for 90 seconds on a hot plate. Subsequently, after placing the test mask on the photoresist film, ultraviolet rays were irradiated and developed to form a photoresist pattern. The specimen with the photoresist pattern thus formed was hard baked at 170 ° C. for 300 seconds to complete the specimen.

<Removal test of photoresist film not subjected to ashing process>

The specimen C was immersed in the photoresist stripper composition at a temperature of 70 ° C. for 5 minutes each. Subsequently, the specimen was removed from the photoresist stripper composition, washed with ultrapure water and dried with nitrogen gas.

[Table 2]

Photoresist Remover Composition Photoresist Removal Performance

Denatured Photoresist Removal Test Psalm A Psalm B 40 ℃ 50 ℃ 60 ° C 70 ℃ 40 ℃ 50 ℃ 60 ° C 70 ℃ Example 1 ○ ○ ◎ ◎ △ ○ ○ ◎ Example 2 ○ ○ ◎ ◎ △ ○ ○ ◎ Example 3 ○ ○ ◎ ◎ △ ○ ○ ◎ Example 4 ○ ○ ◎ ◎ △ ○ ○ ◎ Example 5 ○ ○ ◎ ◎ △ ○ ○ ◎ Example 6 ○ ○ ◎ ◎ △ ○ ○ ◎ Example 7 ○ ○ ◎ ◎ △ ○ ○ ◎ Example 8 ○ ○ ◎ ◎ △ ○ ○ ◎ Example 9 ○ ○ ◎ ◎ △ ○ ○ ◎ Example 10 ○ ○ ◎ ◎ △ ○ ○ ◎ Example 11 ○ ○ ○ ◎ △ ○ ○ ◎ Example 12 ○ ○ ○ ◎ △ ○ ○ ◎ Comparative Example 1 X X X △ X X X △ Comparative Example 2 X X ◎ ◎ X X ○ ◎ Comparative Example 3 X X ◎ ◎ X X ○ ◎

(In Table 2, X: not removed at all, △: partially removed, ○: not partially removed, ◎: completely removed)

From the results of Table 2 above, the photoresist stripper composition (Examples 1 to 12) according to the present invention is a photoresist film cured and modified by a hard bake process, a dry etching process, an ion implantation process and an ashing process, Not only high temperature but low temperature (40 degreeC) could be removed efficiently.

On the other hand, in the case of Comparative Example 1 in which the ammonium salt does not have a water-soluble organic amine, the removal performance was not exhibited. In this case, it can be seen from Comparative Example 2 that the removal performance of the photoresist is not due to the water-soluble organic amine. That is, in the photoresist stripper composition of Comparative Example 2, the water-soluble organic solvent plays only a minor role in the removal of the modified photoresist, and it can be seen that the ammonium salt plays a major role.

In addition, when composed of only the ammonium salt as in Comparative Example 1, it can be found that the removal force is significantly reduced. That is, the ammonium salt in the form of ionic dissociation in water does not help the removal power of the highly modified photoresist, but when mixed with the water-soluble amine as in Example, the removal power was greatly increased because the water-soluble amine This is because the ammonium salt plays a role in helping to generate radicals. The highly oxidizing forms of ammonium radicals and hydroxy radicals are the removal structures found when removing hydroxyamine-modified photoresist. Similarly, when water-soluble organic amines are added together with ammonium salts, ammonium radicals By generating the hydroxy radicals and to greatly improve the removal power.

[Table 3]

Metal film corrosion test Psalm A 40 ℃ 50 ℃ 60 ° C 70 ℃ Example 1 ◎ ◎ ◎ ◎ Example 2 ◎ ◎ ◎ ◎ Example 3 ◎ ◎ ◎ ◎ Example 4 ◎ ◎ ◎ ◎ Example 5 ◎ ◎ ◎ ◎ Example 6 ◎ ◎ ◎ ◎ Example 7 ◎ ◎ ◎ ◎ Example 8 ◎ ◎ ◎ ◎ Example 9 ◎ ◎ ◎ ◎ Example 10 ◎ ◎ ◎ ◎ Example 11 ◎ ◎ ◎ ◎ Example 12 ◎ ◎ ◎ ◎ Comparative Example 1 ◎ △ X X Comparative Example 2 ◎ ◎ △ △ Comparative Example 3 ◎ ◎ △ △

(In Table 3, X: complete corrosion, △: partially corroded. ◎: no corrosion)

Referring to Table 3, the performance of the hydroxyl group-containing organic phenolic compounds used as a corrosion inhibitor in the photoresist stripper composition (Examples 1 to 12) according to the present invention can be observed. On the other hand, when the corrosion inhibitor is not included as in Comparative Example 1, the corrosion of the metal film occurs badly. In addition, in Comparative Examples 2 and 3, although it contains a corrosion inhibitor having two hydroxyl groups among the organic phenolic compounds containing hydroxyl groups, the ammonium salt and the water-soluble organic amine of the present application do not include ammonium salts or include hydroxyl amines. It can be seen that the anti-corrosion performance is lower than the case of including a corrosion inhibitor having two or three hydroxyl groups.

[Table 4]

Removal test of unresisted photoresist film

division Psalm C 70 ℃ Example 1 ◎ Example 2 ◎ Example 3 ◎ Example 4 ◎ Example 5 ◎ Example 6 ◎ Example 7 ◎ Example 8 ◎ Example 9 ◎ Example 10 ◎ Example 11 ◎ Example 12 ◎ Comparative Example 1 X Comparative Example 2 ◎ Comparative Example 3 ◎

(In Table 4, X: not removed at all, △: partially removed, ◎: complete removal)

In Table 4, Examples 1 to 12 of the present invention, because it contains an ammonium salt, but also a water-soluble organic amine and an organic solvent, it was also easy to remove the thermally modified photoresist.

In Comparative Example 1, only the ammonium salt and the organic solvent were used, and the removal performance was poor. In Comparative Examples 2 and 3, the photoresist film which was not subjected to the ashing process was less denatured and relatively removed when the photoresist which was subjected to the ashing process was removed. The result was the same as that of the present application because it was easy to remove. However, in the case of Comparative Examples 2 and 3, as described above, the removal ability is insufficient to remove the photoresist film modified by the ashing process and the dry etching.

As described above, the photoresist stripper composition according to the present invention is easy to remove the photoresist for semiconductor devices, and in particular, the photoresist film cured by dry etching, ashing and ion implantation processes, and the lower part of the process. The photoresist film modified by the metallic by-product etched from the metal film can be easily removed at a low temperature and a high temperature in a short time. In addition, it is possible to minimize corrosion of the lower metal wiring during the photoresist removal process, in particular, side fitting, and to easily remove the thermally modified photoresist which could not be removed when the conventional ammonium salt was included. have. Therefore, it is possible to completely replace the photoresist stripping solution containing hydroxy amine which occupies most of the conventional photoresist stripping solution.

Claims (9)

Ammonium salts, water soluble organic amines, and water, The ammonium salt is for photoresist removal at least one selected from the group consisting of ammonium nitrate, ammonium formate, ammonium carbonate, ammonium acetate, ammonium thiocyanate, ammonium sulfate, ammonium sulfide, ammonium oxalate, and ammonium thiosulfate Stripper composition. According to claim 1, wherein the content of the ammonium salt is 0.5 to 20% by weight based on the total weight of the stripper composition of the stripper composition for removing the photoresist. The method of claim 1, wherein the water-soluble organic amine is monoethanolamine, isopropanolamine, aminoethoxy ethanol, n-methylethanolamine, dimethylethanolamine, diethylethanolamine, 2-aminoethylaminoethanol, aminoethyl piperazine, Aminopropylpiperazine, hydroxyethylpiperazine, 1-amino-4-methylpiperazine, 2-methylpiperazine, 1-methylpiperazine, 1-benzylpiperazine, 2-phenylpiperazine, 1-aminoethylpi A peeling liquid composition for removing photoresist, wherein at least one member is selected from the group consisting of ferradine, 1-aminopiperadine, and 1-aminomethylpiperadine. The photoresist stripper composition of claim 1, wherein the water-soluble organic amine is included in an amount of 7 to 50 wt% based on the total weight of the stripper composition. The photoresist stripper composition of claim 1, wherein the water is deionized water and is included in an amount of 5 to 80 wt% based on the total weight of the stripper composition. The composition of claim 1, wherein the composition further comprises 12 to 60 wt% of a water-soluble organic solvent and 0.4 to 10 wt% of a corrosion inhibitor based on the total weight of the stripper composition. The method of claim 6 wherein the water soluble organic solvent is dimethylsulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc), dimethylformamide (DMF), and dimethylimizolidone (DMI). A peeling liquid composition for removing photoresist that is selected from the group consisting of at least one. The method of claim 6, wherein the corrosion inhibitor is a catechol, pyrocatechol, methyl gallate, gallic acid, 3,4-dihydrooxybenzoic acid, and methyl catechol selected from the group consisting of at least one photoresist stripping stripping Liquid composition. The method according to any one of claims 1 to 8, The composition is a composition for removing photoresist that is used to peel off the deteriorated or cured photoresist generated during the wet or dry etching process of the substrate formed of a multi-junction or single metal wiring and the inorganic material layer.