JPWO2010073887A1 - Photoresist stripper composition, photoresist stripping method and manufacturing method for laminated metal wiring board - Google Patents

Abstract

It does not contain benzotriazoles or thiol group-containing compounds used in the copper or copper alloy wiring manufacturing process of semiconductor substrates and FPD substrates, and copper or copper alloy wiring is also a laminated metal of copper or copper alloy and molybdenum or molybdenum alloy A photoresist stripper composition that does not corrode wiring, and a photoresist stripping method and manufacturing method for a laminated metal wiring board using the same. The present invention comprises (A) secondary alkanolamine and / or tertiary alkanolamine in an amount of 1 to 50% by weight, (B) a water-soluble organic solvent in an amount of 5 to 85% by weight, and (C) a thiol group and an amide structure in the molecule. The amino acid having 2 or more nitrogen atoms and 0.002 to 0.1 wt% of the amino acid, (D) 10 to 93.998 wt% of water, and the total amount of (B) and (D) is This is a photoresist stripper composition having a pH of 49.9 to 98.998% by weight and having a pH of more than 8 in a solution diluted 20 times by weight with water.

Description

  The present invention relates to a photoresist remover composition, and in particular, is preferably used for a flat panel display (hereinafter also referred to as FPD) substrate represented by a liquid crystal display or a copper or copper alloy wiring substrate of a semiconductor substrate. The present invention relates to a photoresist remover composition excellent in corrosion resistance and peelability, a method for removing a photoresist from a laminated metal wiring board using the same, and a method for producing a laminated metal wiring board.

An FPD substrate or a semiconductor substrate has an electrode structure with fine wiring, and a photoresist is used in the manufacturing process. For example, a photoresist is applied on a conductive metal layer such as aluminum, aluminum alloy, copper, or copper alloy formed on a substrate, or an insulating film such as SiO ₂ film, and the resist is subjected to exposure and development. A pattern is formed, and the conductive metal layer, insulating film, and the like are etched using the patterned resist as a mask to form fine wiring, and then the unnecessary photoresist layer is removed with a release agent to produce a substrate. Is done.

  Conventionally, a single solvent such as an organic alkali, an inorganic alkali, an organic acid, an inorganic acid, a polar solvent, or a mixed solution thereof has been used as a photoresist stripping composition. It is also well known to use a mixed liquid of amine and water in order to improve photoresist peelability. The photoresist remover composition is required not to corrode fine wiring. Conventionally, aluminum has been widely used as a wiring material, and therefore various studies have been made on corrosion inhibition against aluminum.

  However, in recent years, attempts have been made to use copper or a copper alloy having a resistivity lower than that of aluminum as a wiring material in accordance with an increase in the size of a substrate and the miniaturization of a wiring pattern. Copper is a metal that is easily corroded by alkali-containing solutions, and the corrosion dissolution mechanism is different from that of aluminum. Corrosion suppression measures that were effective with aluminum are almost ineffective. Therefore, anticorrosives effective for copper or copper alloys have been studied. For example, Patent Document 1 discloses an anticorrosive containing a heterocyclic compound having a 5- or 6-membered heterocyclic ring containing an atomic group of —C (OH) ═N— or —CONH— and an alkanolamine as a semiconductor wafer. It describes that a metal layer such as copper formed thereon is anticorrosive.

  Patent Document 2 describes that an amino acid having a thiol group in the molecule or a derivative thereof prevents metal corrosion such as copper wiring. That is, it is disclosed that an amino acid having a thiol group in the molecule or a derivative thereof has a good metal corrosion prevention action and does not cause corrosion or oxidation of copper wiring. This disclosure clearly excludes amino acids that do not have a thiol group in the molecule in corrosion inhibitors such as copper. Furthermore, Patent Document 3 discloses a copper wiring residue cleaning solution containing an amino acid having a chelate stabilization constant of 15 or more and having no thiol group. That is, it is disclosed that glycine, proline, histidine and the like not having a thiol group are excellent in CuO solubility. However, it is also disclosed that the copper corrosion amount of these amino acids is comparable to lysine, alanine and the like.

  Further, benzotriazoles are known as strong corrosion inhibitors for copper.

  However, conventional anticorrosives for copper or copper alloys have not always had sufficient anticorrosion properties. Moreover, although the compound and benzotriazole which have a thiol group in a molecule | numerator are excellent in the anticorrosive property of copper or a copper alloy, when the board | substrate containing copper or a copper alloy is processed with the photoresist stripping composition containing these, A precipitate is generated on the surface of copper or copper alloy. However, since this deposit cannot be removed by ordinary washing, there is a problem that a separate deposit removal treatment is required.

  On the other hand, copper or a copper alloy has insufficient adhesion to a base substrate such as glass. Therefore, in order to improve the adhesion, it is necessary to laminate another metal layer on the base of the copper or copper alloy wiring. Such a base metal layer is also called an auxiliary film. As the base metal layer, molybdenum or a molybdenum alloy is generally considered.

  Molybdenum or molybdenum alloy itself is a metal with excellent anticorrosion properties, and by itself, it hardly corrodes even when treated with a photoresist stripper composition. However, it has been confirmed that in the state where copper or copper alloy and molybdenum or molybdenum alloy are in contact, corrosion of molybdenum or molybdenum alloy is greatly accelerated by the battery effect. On the other hand, with the conventional anticorrosive agent for copper or copper alloy, even if copper or copper alloy could be anticorrosive, corrosion of molybdenum or molybdenum alloy in contact with copper or copper alloy could not be suppressed. That is, a base metal layer of molybdenum or a molybdenum alloy is formed on a substrate, a copper or copper alloy layer is further formed thereon, and the base metal layer and the copper or copper alloy layer are collectively or via a patterned photoresist. After sequential etching, when the photoresist that is no longer needed is peeled off using the photoresist stripper composition, in the copper or copper alloy wiring on the underlying metal layer of the wiring patterned molybdenum or molybdenum alloy, The base metal layer is more corroded than the copper or copper alloy wiring, or in some cases, the copper or copper alloy wiring is more corroded, resulting in a problem that the laminated metal wiring is not formed.

JP 2002-97584 A JP 2003-13266 A JP-A-2005-217114

  In the copper or copper alloy wiring manufacturing process of the semiconductor substrate and the FPD substrate, the present invention does not contain benzotriazoles and a compound having a thiol group, and the copper or copper alloy wiring and the copper or copper alloy formed on the substrate Photoresist stripper composition capable of stripping photoresist without corroding multilayer metal wiring with molybdenum or molybdenum alloy, photoresist stripping method for multilayer metal wiring board using the same, and method for manufacturing multilayer metal wiring board The purpose is to provide.

  As a result of intensive studies, the present inventor removed a photoresist containing a secondary and / or tertiary alkanolamine and a water-soluble organic solvent and an amino acid having no thiol group in the molecule and having two or more nitrogen atoms. The agent composition has excellent anticorrosion properties for copper or copper alloy wiring and laminated metal wiring of copper or copper alloy and molybdenum or molybdenum alloy, and also has good photoresist stripping performance. As a result, the present invention has been completed.

That is, the present invention contains (A) a secondary alkanolamine and / or tertiary alkanolamine and (B) a water-soluble organic solvent, and (C) has neither a thiol group nor an amide structure in the molecule, and nitrogen. A photoresist stripping composition comprising a solution containing 0.002 to 0.1% by weight of an amino acid having 2 or more atoms and diluted to 20 times by weight with water and having a pH exceeding 8.
In one embodiment of the photoresist stripping composition of the present invention, (A) secondary alkanolamine and / or tertiary alkanolamine is 1 to 50 wt%, and (B) water-soluble organic solvent is 49.9 to 98. 998% by weight, (C) 0.002 to 0.1% by weight of an amino acid having neither a thiol group nor an amide structure in the molecule and having two or more nitrogen atoms.
In another aspect of the photoresist remover composition of the present invention, (D) water is further contained. In this case, in another embodiment of the photoresist stripping composition of the present invention, water (D) can be contained instead of a part of the water-soluble organic solvent (B). That is, (A) secondary alkanolamine and / or tertiary alkanolamine is 1 to 50% by weight, (B) water-soluble organic solvent is 5 to 85% by weight, (C) both thiol group and amide structure in the molecule It contains 0.002 to 0.1% by weight of an amino acid having 2 or more nitrogen atoms, (D) 10 to 93.998% by weight of water, and the total amount of (B) and (D) is 49. 9 to 98.998% by weight.
In one embodiment of the photoresist stripping composition of the present invention, the amino acid (C) is at least one selected from the group consisting of arginine, glycosamine, histidine and lysine.
In another aspect of the photoresist stripping composition of the present invention, the amino acid (C) is at least one selected from the group consisting of arginine, glycosylamine and lysine.
In another embodiment of the photoresist stripper composition of the present invention, the amino acid (C) may also be arginine.
In the photoresist stripping composition of the present invention, the secondary alkanolamine and / or tertiary alkanolamine (A) is selected from the group consisting of diethanolamine, N-methylethanolamine, N-methyldiethanolamine and triethanolamine. At least one kind.
The present invention also eliminates the need for using a photoresist to form a laminated metal wiring of one or more layers of molybdenum or molybdenum alloy layers and one or more layers of copper or copper alloy layers on a substrate. It is also a photoresist stripping method for a multilayer metal wiring board of a molybdenum or molybdenum alloy layer and a copper or copper alloy layer, characterized in that the stripped photoresist is stripped and removed using the photoresist stripping composition of the present invention. .
The present invention further provides a method of laminating one or more molybdenum or molybdenum alloy layers and one or more copper or copper alloy layers on a substrate, and then laminating the laminate via a patterned photoresist. After the etched metal layer is etched, the photoresist that is no longer needed is stripped and removed using the photoresist stripper composition of the present invention.
Hereinafter, the present invention is also simply referred to as “the present invention” without particular distinction.

The present invention has the above configuration.
(1) In the metal wiring manufacturing process of a semiconductor substrate and an FPD substrate, it has excellent releasability from a photoresist.
(2) It has excellent anticorrosive properties for any of copper or copper alloy wiring and laminated metal wiring of copper or copper alloy and molybdenum or molybdenum alloy.
(3) When the photoresist stripping composition of the present invention is used, the copper or copper alloy wiring on the wiring-patterned molybdenum or molybdenum alloy base metal layer corrodes the base metal layer or copper or copper alloy wiring. By preventing this, it is possible to form a favorable laminated metal wiring that does not have an undercut shape due to excessive corrosion of the underlayer or a thinning of the wiring width due to corrosion of the copper or copper alloy layer.

  In the present invention, (A) secondary alkanolamine and / or tertiary alkanolamine (also referred to herein as simply “alkanolamine (A)”) may be only secondary alkanolamine, Only a tertiary alkanolamine may be sufficient, and a secondary alkanolamine and a tertiary alkanolamine may be sufficient. The alkanolamine (A) is not particularly limited, and examples of the secondary alkanolamine include diethanolamine, N-methylethanolamine, and N-ethylethanolamine. Examples of the tertiary alkanolamine include: N-methyldiethanolamine, N-ethyldiethanolamine, N, N-dimethylethanolamine, N, N-diethylethanolamine, triethanolamine and the like can be mentioned. These may be used alone or in combination of two or more. Among these, diethanolamine, N-methylethanolamine, N-methyldiethanolamine, triethanolamine, and any combination thereof are preferable from the viewpoints of easy availability, releasability, and anticorrosive properties for copper or a copper alloy.

  The amount of alkanolamine (A) added is preferably 1 to 50% by weight in the release agent composition. Within this range, the peelability is sufficiently good, and the viscosity is low and the handling is good. More preferably, it is 3 to 45% by weight.

  In the present invention, the water-soluble organic solvent (B) is not particularly limited. For example, acetone, methanol, ethanol, diethylene glycol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, propylene glycol methyl ether, diethylene glycol, Examples include propylene glycol, N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, acetonitrile, dimethyl sulfoxide, sulfolane, and ethylene carbonate. These may be used alone or in combination of two or more. Of these, diethylene glycol monobutyl ether, N, N-dimethylacetamide, and diethylene glycol are preferred.

  The amount of the water-soluble organic solvent (B) added is preferably 49.9 to 98.998% by weight in the release agent composition. Within this range, the peelability of the photoresist and the corrosion resistance of copper or copper alloy are sufficiently satisfactorily exhibited. More preferably, it is 54.998-96.998 weight%.

  In the present invention, amino acid (C) has neither a thiol group nor an amide structure in the molecule, and has two or more nitrogen atoms. Such an amino acid has many coordination points with respect to a metal compared with a general amino acid containing only one nitrogen atom, and is considered to have a high anticorrosion effect. In addition, compared with amino acids having a hydroxyl group, the nitrogen atom has a higher coordinating power to copper than the hydroxyl group, and thus is considered to exhibit a high anticorrosive effect. On the other hand, compared with an amino acid having a thiol group, the nitrogen atom has a lower coordination power to copper than the thiol group, so it is considered that the nitrogen atom does not precipitate on the surface of copper and exhibits an appropriate anticorrosive property. Moreover, even if it has two or more nitrogen atoms, those having an amide structure are inferior in corrosion resistance.

  The amino acid (C) does not have both a thiol group and an amide structure in the molecule and has 2 or more, preferably 2 to 4, nitrogen atoms. For example, histidine, arginine, lysine, glycosamine, creatine Ornithine and the like. These may be used alone or in combination of two or more. Further, for example, it may be at least one selected from the group consisting of arginine, glycosamine, histidine and lysine, may be at least one selected from the group consisting of arginine, glycosamine and lysine, or Arginine may be used. Of these, histidine, arginine, lysine, and glycosylamine are preferable from the viewpoint of availability and anticorrosion.

  The content of the amino acid (C) is 0.002 to 0.1% by weight in the release agent composition. If it is within this range, the corrosion resistance to copper or copper alloy and molybdenum or molybdenum alloy is sufficient, and if it exceeds this range, the peelability of the photoresist is lowered and more than the case where no amino acid (C) is contained. On the contrary, it is not suitable because it may reduce the corrosion resistance of copper or copper alloy. Preferably, it is 0.003-0.1 weight%, More preferably, it is 0.005-0.1 weight%.

  In the present invention, the total of the alkanolamine (A), the water-soluble organic solvent (B) and the amino acid (C) can occupy 100% by weight in the composition.

  In another aspect of the photoresist remover composition of the present invention, (D) water is further contained. In this case, in another embodiment of the photoresist stripping composition of the present invention, (D) water can be contained instead of a part of the water-soluble organic solvent (B). In this case, the water-soluble organic solvent (B) is preferably 5 to 85% by weight, more preferably 10 to 75% by weight, and the water (D) is preferably 10 to 93.998% by weight, more preferably 10 to 85% by weight. %, More preferably 15 to 80% by weight, and the total amount of (B) and (D) is preferably 49.9 to 98.998% by weight, more preferably 54.998 to 96.998% by weight. . By blending water (D), the releasability of the photoresist is further improved, and even when the alkanolamine (A) and the water-soluble organic solvent (B) have a flash point, the flash point as a release agent composition. There is an effect to eliminate. When blending water (D), if it is within the above range, the effect of improving the peelability of the photoresist can be obtained, and the effect of eliminating the flash point can be obtained. When the above range is exceeded, the concentration of other components may decrease, and the peelability of the photoresist may decrease.

  The photoresist remover composition in the present invention contains alkanolamine (A), and the aqueous solution has alkalinity. When the photoresist stripping composition has acidity and neutrality, the stripping property of the photoresist may be insufficient. An alkaline index necessary for obtaining sufficient photoresist peelability is that the pH of the diluted solution exceeds 8 when the photoresist remover composition is diluted 20 times by weight with water. The pH is preferably 9 or more. When the pH value varies depending on the temperature, the value is at 25 ° C.

  In addition to the above components, the photoresist stripper composition of the present invention has a surfactant (for example, alkylbenzene sulfonate, polyoxyethylene alkyl ether), an antifoaming agent (for example, for example) as long as the object of the present invention is not impaired. An additive such as silicone oil) can be contained. Since the content of the additive depends on the type of the additive, it is not generally determined. For example, 0.001 to 5% by weight is preferable, and 0.01 to 1% by weight is more preferable.

  The photoresist remover composition of the present invention can be prepared by mixing the required amounts of the above components by a conventional method.

  The photoresist stripping composition of the present invention is used for stripping a photoresist that is no longer necessary after an etching process for metal wiring or the like in the manufacturing process of a semiconductor substrate and an FPD substrate. The metal wiring is not particularly limited and can be applied to metal wiring used in the technical field, but among them, it is preferably used for laminated metal wiring of molybdenum or molybdenum alloy layer and copper or copper alloy layer. can do. The photoresist remover composition of the present invention can be used by heating to, for example, 30 ° C. to 80 ° C. in addition to normal temperature (25 ° C.). The time required for stripping depends on the degree of alteration of the photoresist, but is generally about 30 seconds to 10 minutes, for example. After the treatment, washing with water, air blow drying and the like can be performed as necessary. The photoresist is not particularly limited and is a photosensitive resin used in the technical field (for example, a positive photoresist (a novolak resin, a naphthoquinonediazide-based photosensitive agent and a positive photoresist mainly composed of a solvent), etc.) Can be used.

  Specifically, the photoresist stripping method of the laminated metal wiring board using the photoresist stripping composition of the present invention uses one or more molybdenum or molybdenum alloy layers and one or more layers using a photoresist. When the laminated metal wiring with the copper or copper alloy layer is formed on the substrate, the unnecessary photoresist is peeled off using the photoresist stripper composition of the present invention. By doing so, in the laminated metal wiring of the molybdenum or molybdenum alloy layer and the copper or copper alloy layer, the base metal layer is excessively corroded to form an undercut shape, and conversely, the copper or copper alloy layer is excessively excessive. A good lamination of molybdenum or a molybdenum alloy layer and a copper or copper alloy layer without damaging the wire width of the copper or copper alloy wiring due to corrosion and without damaging the wiring cross-sectional shape formed by etching. Metal wiring is formed. As an aspect of the laminated metal wiring, for example, in order from the substrate, a three-layer laminated metal wiring of molybdenum or molybdenum alloy / copper or copper alloy / molybdenum or molybdenum alloy, or two layers of molybdenum or molybdenum alloy / copper or copper alloy. There may be laminated metal wiring or the like.

  Moreover, the manufacturing method of the laminated metal wiring board using the photoresist remover composition of the present invention comprises a single layer or a plurality of layers of molybdenum or a molybdenum alloy layer and a single layer or a plurality of layers of copper or a copper alloy layer on the substrate. After laminating and then etching the laminated metal layer through the patterned photoresist, the photoresist that is no longer needed is stripped and removed using the photoresist stripper composition of the present invention. At this time, as the etching process, the stacked metal layers may be etched at once, or each stacked layer may be etched sequentially. The etching method is not particularly limited, and a method used in the technical field (for example, a method using an etching solution, a dry etching method, or the like) can be applied. After peeling and removing, washing with water, air blow drying and the like can be performed as necessary to obtain a substrate.

  EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited to these examples.

Examples 1-17, Comparative Examples 1-21
Each component was mixed by the mixing | blending of Table 1 and Table 2, respectively, and the photoresist peeling agent composition was obtained. The abbreviations in the table are as follows.
MDEA: N-methyldiethanolamine DEA: N, N-diethanolamine MEA: monoethanolamine TEA: triethanolamine MMEA: N-methylethanolamine DMAC: N, N-dimethylacetamide BDG: diethylene glycol monobutyl ether 4, 6-DHP: 4 , 6-Dihydroxypyrimidine

Evaluation 1: Copper single-film anticorrosive property A substrate on which a copper film having a thickness of 50 nm was formed on glass by sputtering was used as an evaluation object. The substrate was dipped in a photoresist remover composition adjusted to 50 ° C., and the treatment time was about 10 minutes or less, but the treatment was performed for 3 times that of 30 minutes. After the immersion treatment, the substrate was washed with water and air-dried. The remaining state of the copper film on the substrate was visually observed.
Judgment criteria
(Pass)
○: No change
(Failure)
Δ: Some copper film disappeared ×: Copper film almost disappeared

Evaluation 2: Corrosion resistance of copper / molybdenum multilayer wiring (Cu / Mo wiring corrosion resistance)
Films of molybdenum and copper are sputtered onto glass in this order, and then a photoresist (a novolak resin, a positive photoresist mainly composed of a naphthoquinone diazide-based photosensitizer and a solvent) is formed, and a photo is formed by UV exposure and development. After patterning the resist, a substrate on which copper and molybdenum were collectively etched with a copper etchant containing hydrogen peroxide under the condition of 40 ° C./50 seconds was used as an evaluation target. The substrate was immersed in a photoresist remover composition adjusted to 40 ° C. and treated for 10 minutes. After the immersion treatment, the substrate was washed with water and air-dried. The board | substrate was observed using the electron microscope and the corrosion condition of copper and molybdenum was confirmed. The determination was made separately for copper (Cu) and molybdenum (Mo).
Judgment criteria
(Pass)
○: No corrosion
(Failure)
△: Slightly corrosive ×: Significantly corroded

Evaluation 3: Photoresist releasability A SiN film is formed on a glass substrate by CVD, a photoresist is formed, the photoresist is patterned by UV exposure and development, and then SiN is used with a fluorine-based gas. The substrate subjected to dry etching was evaluated. The substrate was immersed in a photoresist remover composition adjusted to 40 ° C. and treated for 30 seconds. After the immersion treatment, the substrate was washed with water and air-dried. The substrate was observed using an electron microscope to confirm the peeling of the photoresist.
Judgment criteria (pass)
○: No peeling residue
(Failure)
Δ: Slightly remaining peeling ×: Almost no peeling

  For each photoresist stripping composition, first, evaluation 1 was performed, and evaluation 2 was performed for those having a determination of “◯” or “Δ”. Evaluation 3 was performed for all the evaluations in evaluation 2 that were “◯”. However, for Comparative Examples 14 and 15, Evaluation 3 was performed regardless of the results of Evaluations 1 and 2. The evaluation results are shown in Tables 1 and 2. Moreover, the aqueous solution diluted 20 times weight ratio with water about each photoresist remover composition was created, and pH at 25 degreeC was measured using the pH meter.

  As a result of the evaluation, a photoresist stripper composition containing a primary alkanolamine (Comparative Examples 1 and 3), which contains an amino acid having no thiol group and amide structure in the molecule and having two or more nitrogen atoms. Photoresist stripper composition containing primary alkanolamine (Comparative Example 10), 0.1% by weight of amino acid having no thiol group and amide structure in the molecule and having 2 or more nitrogen atoms Exceeding photoresist stripper composition (Comparative Examples 4, 6, 18-20), secondary alkanolamine and water-soluble organic solvent, but no thiol group or amide structure in the molecule, nitrogen Photoresist stripper composition not containing amino acid having 2 or more atoms (Comparative Example 17), tertiary alkanolamine, thiol group and amide structure in the molecule, Photoresist stripping composition containing alkanolamine having 2 or more atoms but no water-soluble organic solvent (Comparative Example 11), tertiary alkanolamine, water-soluble organic solvent, and only one nitrogen atom Photoresist stripper composition containing amino acids having (Comparative Examples 7 and 8), Photoresist stripper composition comprising an amino acid having two or more nitrogen atoms and water having no thiol group and amide structure in the molecule (Comparative Examples 14 and 15), a composition (Comparative Example 21) using an amino acid (asparagine) having no thiol group and amide structure in the molecule and having two or more nitrogen atoms but having an amide structure was evaluated as 1 The corrosion resistance of the copper single film was poor (evaluation “×”).

  Photoresist stripping that contains secondary alkanolamine and / or tertiary alkanolamine and a water-soluble organic solvent, but has no thiol group or amide structure in the molecule and no amino acid having two or more nitrogen atoms Composition (Comparative Examples 5, 9, 16) and a photoresist stripper composition (Comparative Example 12) containing an aluminum anticorrosive anticorrosive (described in JP-A-2001-350276), Patent Document 1 The photoresist stripper composition (Comparative Example 13) containing the described anticorrosive has insufficient copper (Cu) or molybdenum (Mo) anticorrosion in the Cu / Mo wiring anticorrosion of Evaluation 2 (Evaluation “Δ”) Met.

  The photoresist stripper composition (Comparative Example 2) consisting only of a water-soluble organic solvent was good in both the copper single-film corrosion resistance of Evaluation 1 and the Cu / Mo wiring corrosion resistance of Evaluation 2, but the pH of a 5% aqueous solution Was 8 or less, and the photoresist peelability of evaluation 3 was insufficient (evaluation “Δ”). A photoresist remover composition (Comparative Examples 14 and 15) composed of an amino acid having two or more nitrogen atoms and water having no thiol group and amide structure in the molecule (Comparative Examples 14 and 15) also has a pH of 5% aqueous solution of 8 or less. The photoresist peelability of evaluation 3 was poor (evaluation “x”).

  On the other hand, the photoresist stripping compositions (Examples 1 to 17) of the present invention are good in all of the copper single film corrosion resistance of evaluation 1, the Cu / Mo wiring corrosion resistance of evaluation 2, and the photoresist peelability of evaluation 3. (Evaluation “◯”) was obtained.

Claims (10)

(A) Secondary alkanolamine and / or tertiary alkanolamine and (B) water-soluble organic solvent, and (C) no thiol group and amide structure in the molecule, and two or more nitrogen atoms A photoresist remover composition, wherein the pH of a solution containing 0.002 to 0.1% by weight of an amino acid and diluted with water to a weight ratio of 20 exceeds 8. The photoresist remover composition according to claim 1, further comprising (D) water. The alkanolamine (A) content is 1 to 50% by weight, the water-soluble organic solvent (B) content is 49.9 to 98.998% by weight, and the amino acid (C) content is 0.002 to 0.001. The photoresist remover composition according to claim 1, which is 1% by weight. The alkanolamine (A) content is 1 to 50% by weight, the water-soluble organic solvent (B) content is 5 to 85% by weight, the amino acid (C) content is 0.002 to 0.1% by weight, The photoresist stripping agent according to claim 2, wherein the content of water (D) is 10 to 93.998% by weight, and the total amount of (B) and (D) is 49.9 to 98.998% by weight. Composition. The resist stripping composition according to any one of claims 1 to 4, wherein the amino acid (C) is at least one selected from the group consisting of arginine, glycosamine, histidine and lysine. The resist remover composition according to any one of claims 1 to 4, wherein the amino acid (C) is at least one selected from the group consisting of arginine, glycosylamine and lysine. The resist remover composition according to claim 1, wherein the amino acid (C) is arginine. The photoresist stripping composition according to any one of claims 1 to 7, wherein the alkanolamine (A) is at least one selected from the group consisting of diethanolamine, N-methylethanolamine, N-methyldiethanolamine and triethanolamine. object. When a laminated metal wiring of one or more layers of molybdenum or molybdenum alloy layer and one or more layers of copper or copper alloy layer is formed on a substrate by using a photoresist, A method for removing a photoresist from a laminated metal wiring board comprising a molybdenum or molybdenum alloy layer and a copper or copper alloy layer, wherein the photoresist remover composition according to any one of claims 1 to 8 is used to remove and remove the photoresist. . Laminate one or more layers of molybdenum or molybdenum alloy layer and one or more layers of copper or copper alloy layer on the substrate, and then etch the laminated metal layer through a patterned photoresist Then, the photoresist that has become unnecessary is peeled and removed using the photoresist stripper composition according to claim 1.