WO2008046304A8 - A cleaning method for use in post etch and ashing a semiconductor wafer - Google Patents

A cleaning method for use in post etch and ashing a semiconductor wafer Download PDF

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Publication number
WO2008046304A8
WO2008046304A8 PCT/CN2007/002934 CN2007002934W WO2008046304A8 WO 2008046304 A8 WO2008046304 A8 WO 2008046304A8 CN 2007002934 W CN2007002934 W CN 2007002934W WO 2008046304 A8 WO2008046304 A8 WO 2008046304A8
Authority
WO
WIPO (PCT)
Prior art keywords
ions
ashing
semiconductor wafer
metal corrosion
cleaning method
Prior art date
Application number
PCT/CN2007/002934
Other languages
French (fr)
Chinese (zh)
Other versions
WO2008046304A1 (en
Inventor
Libbert Hongxiu Peng
Andrew Shengli Wang
Andy Chunxiao Yang
Original Assignee
Anji Microelectronics Shanghai
Libbert Hongxiu Peng
Andrew Shengli Wang
Andy Chunxiao Yang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics Shanghai, Libbert Hongxiu Peng, Andrew Shengli Wang, Andy Chunxiao Yang filed Critical Anji Microelectronics Shanghai
Priority to CN200780037535.4A priority Critical patent/CN101529559B/en
Publication of WO2008046304A1 publication Critical patent/WO2008046304A1/en
Publication of WO2008046304A8 publication Critical patent/WO2008046304A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • C11D2111/22—

Abstract

A cleaning method for use in post etch and ashing a semiconductor wafer is provided. The method comprises the following steps: after treating the wafer with photoresist cleaning solution, clean the wafer with a metal protective liquid containing water-solubility metal corrosion inhibitor, and dry it. The water-solubility metal corrosion inhibitor may be a polycarboxylate metal corrosion inhibitor. By employing the metal protective liquid, the method prevents metal corrosion from halogen ions, oxygen ions, bromine ions, OH- ions, H ions etc. generated from the plasma etch process and the atmosphere.
PCT/CN2007/002934 2006-10-13 2007-10-12 A cleaning method for use in post etch and ashing a semiconductor wafer WO2008046304A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200780037535.4A CN101529559B (en) 2006-10-13 2007-10-12 A cleaning method for use in post etch and ashing a semiconductor wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200610117137.0 2006-10-13
CNA2006101171370A CN101162684A (en) 2006-10-13 2006-10-13 Cleaning method afterSemi-conductor crystal round etching ashing

Publications (2)

Publication Number Publication Date
WO2008046304A1 WO2008046304A1 (en) 2008-04-24
WO2008046304A8 true WO2008046304A8 (en) 2009-05-28

Family

ID=39297573

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2007/002934 WO2008046304A1 (en) 2006-10-13 2007-10-12 A cleaning method for use in post etch and ashing a semiconductor wafer

Country Status (2)

Country Link
CN (2) CN101162684A (en)
WO (1) WO2008046304A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101748409A (en) * 2008-11-28 2010-06-23 安集微电子（上海）有限公司 Semiconductor wafer metal base protection liquid and use method thereof
CN102399648B (en) * 2010-09-10 2015-04-15 安集微电子（上海）有限公司 Fluorine-containing cleaning solution
CN103208416B (en) * 2013-04-03 2016-06-22 无锡华润上华半导体有限公司 Clean and dry method after a kind of cavity structure etching
KR20160141249A (en) * 2015-05-29 2016-12-08 세메스 주식회사 Nozzle, Apparatus and method for treating a substrate with the same
WO2017063188A1 (en) * 2015-10-16 2017-04-20 Ecolab Usa Inc. Maleic anhydride homopolymer and maleic acid homopolymer and the method for preparing the same, and non-phosphorus corrosion inhibitor and the use thereof
CN109545662A (en) * 2018-11-21 2019-03-29 合肥新汇成微电子有限公司 A kind of plasma-based cleaning in crystal round etching processing procedure
CN110508549B (en) * 2019-08-12 2022-07-26 锦州神工半导体股份有限公司 Cleaning method of monocrystalline silicon gasket with aluminum nitride film deposited on surface

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100343361C (en) * 2001-03-27 2007-10-17 高级技术材料公司 Aqueous cleaning compsn. contg. copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
CN1194391C (en) * 2001-06-13 2005-03-23 旺宏电子股份有限公司 Method for washing semiconductor without corrosion to metal
US20040216770A1 (en) * 2003-04-29 2004-11-04 Taiwan Semiconductor Manufacturing Co., Ltd. Process for rinsing and drying substrates
KR100543457B1 (en) * 2003-06-02 2006-01-23 삼성전자주식회사 Cleaning agent with a corrosion inhibitor in a process of forming a semiconductor device
KR20050044085A (en) * 2003-11-07 2005-05-12 삼성전자주식회사 Aqueous cleaning solution for integrated circuit device and cleaning method using the cleaning solution
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions

Also Published As

Publication number Publication date
CN101529559B (en) 2013-01-16
CN101162684A (en) 2008-04-16
CN101529559A (en) 2009-09-09
WO2008046304A1 (en) 2008-04-24

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