SG10201807214WA - Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device - Google Patents

Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device

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Publication number
SG10201807214WA
SG10201807214WA SG10201807214WA SG10201807214WA SG10201807214WA SG 10201807214W A SG10201807214W A SG 10201807214WA SG 10201807214W A SG10201807214W A SG 10201807214WA SG 10201807214W A SG10201807214W A SG 10201807214WA SG 10201807214W A SG10201807214W A SG 10201807214WA
Authority
SG
Singapore
Prior art keywords
silicon
germanium
semiconductor device
during manufacture
selectively removing
Prior art date
Application number
SG10201807214WA
Inventor
Dar Liu Wen
Lee Yi-Chia
J Adamczyk Andrew
Original Assignee
Versum Materials Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG10201807214WA publication Critical patent/SG10201807214WA/en

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
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    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Silicon Compounds (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

OF THE DISCLOSURE ETCHING SOLUTION FOR SELECTIVELY REMOVING SILICON OVER SILICON- GERMANIUM ALLOY FROM A SILICON-GERMANIUM/ SILICON STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE Etching compositions suitable for the selective removal of silicon over silicon- germanium from a microelectronic device comprising: water; at least one of a quaternary ammonium hydroxide compound and an amine compound; water-miscible solvent; optionally surfactant and optionally corrosion inhibitor; and the method of using the etching composition for the selective removal. (No drawing to be published)
SG10201807214WA 2017-08-25 2018-08-24 Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device SG10201807214WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762550491P 2017-08-25 2017-08-25
US16/109,172 US10934485B2 (en) 2017-08-25 2018-08-22 Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device

Publications (1)

Publication Number Publication Date
SG10201807214WA true SG10201807214WA (en) 2019-03-28

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SG10201807214WA SG10201807214WA (en) 2017-08-25 2018-08-24 Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device

Country Status (8)

Country Link
US (1) US10934485B2 (en)
EP (1) EP3447109B1 (en)
JP (1) JP6892418B2 (en)
KR (1) KR102241352B1 (en)
CN (1) CN109423288B (en)
IL (1) IL261357B2 (en)
SG (1) SG10201807214WA (en)
TW (1) TWI773809B (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11031239B2 (en) 2018-06-29 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium nanosheets and methods of forming the same
US10680063B2 (en) * 2018-09-07 2020-06-09 International Business Machines Corporation Method of manufacturing stacked SiGe nanotubes
US11180697B2 (en) 2018-11-19 2021-11-23 Versum Materials Us, Llc Etching solution having silicon oxide corrosion inhibitor and method of using the same
JP7450334B2 (en) * 2018-12-27 2024-03-15 東京応化工業株式会社 Etching solution and semiconductor device manufacturing method
US11168253B2 (en) 2019-01-08 2021-11-09 Samsung Electronics Co., Ltd. Silicon layer etchant composition and method of forming pattern by using the same
KR102444014B1 (en) 2019-02-05 2022-09-15 가부시키가이샤 도쿠야마 Silicon etching solution and method for producing silicon device using the etching solution
EP3959291A4 (en) * 2019-03-11 2023-07-19 Versum Materials US, LLC Etching solution and method for aluminum nitride
CN113950520B (en) * 2019-06-13 2024-03-01 弗萨姆材料美国有限责任公司 Liquid composition for selective removal of polysilicon relative to p-doped silicon and silicon-germanium during semiconductor device fabrication
JP7340969B2 (en) * 2019-06-28 2023-09-08 東京応化工業株式会社 Silicon etching solution, silicon etching method, and silicon fin structure manufacturing method
CN110438504A (en) * 2019-08-19 2019-11-12 江阴江化微电子材料股份有限公司 A kind of alum gate Ke Kai area's silicon slag removes composition and silicon slag sweep-out method
TW202129061A (en) 2019-10-02 2021-08-01 美商應用材料股份有限公司 Gate all around i/o engineering
KR20220118520A (en) * 2019-12-20 2022-08-25 버슘머트리얼즈 유에스, 엘엘씨 CO/CU selective wet etchant
US11342409B2 (en) * 2020-03-25 2022-05-24 Intel Corporation Isolation regions in integrated circuit structures
US20230129238A1 (en) * 2020-03-31 2023-04-27 Nissan Chemical Corporation Cleaning agent composition and method for producing processed semiconductor substrate
WO2022025163A1 (en) 2020-07-31 2022-02-03 株式会社トクヤマ Silicon etching liquid, and method for producing silicon device and method for processing silicon substrate, each using said etching liquid
JPWO2022025161A1 (en) 2020-07-31 2022-02-03
KR20220033141A (en) * 2020-09-09 2022-03-16 동우 화인켐 주식회사 Silicon etchant composition, pattern formation method and manufacturing method of array substrate using the etchant composition, and array substrate manufactured therefrom
KR20230122597A (en) 2020-12-24 2023-08-22 가부시끼가이샤 도꾸야마 Silicon etchant, silicon device manufacturing method using the etchant, and substrate processing method
CN116635986A (en) 2021-01-12 2023-08-22 三菱化学株式会社 Etching composition, etching method, method for manufacturing semiconductor device, and method for manufacturing fully-surrounding gate transistor
JPWO2022172907A1 (en) 2021-02-10 2022-08-18
WO2022190903A1 (en) * 2021-03-11 2022-09-15 富士フイルム株式会社 Composition for treating semiconductor and method for treating object-to-be-treated
TW202235681A (en) * 2021-03-12 2022-09-16 李長榮化學工業股份有限公司 Composition of etchant, method for forming semiconductor device using the same, and semiconductor device
KR20240031305A (en) 2021-07-08 2024-03-07 바스프 에스이 Uses and methods of compositions for selectively etching silicon
JP2023042176A (en) * 2021-09-14 2023-03-27 株式会社東芝 Etching method
WO2023047959A1 (en) * 2021-09-21 2023-03-30 富士フイルム株式会社 Treatment liquid for semiconductor production and treatment method for object to be treated
WO2023079908A1 (en) * 2021-11-02 2023-05-11 三菱ケミカル株式会社 Etchant, etching method, method for producing semiconductor device, and method for producing gate-all-around transistor
US20230151274A1 (en) * 2021-11-15 2023-05-18 Cj Technology Co., Ltd. Method for selective etching Si in the presence of silicon nitride, its composition and application thereof
TW202342821A (en) * 2022-02-24 2023-11-01 日商三菱瓦斯化學股份有限公司 Composition, and semiconductor substrate manufacturing method and etching method using same
CN115011348B (en) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 Aluminum nitride etching solution and application thereof
CN117417747A (en) * 2023-09-13 2024-01-19 湖北兴福电子材料股份有限公司 Silicon selective etching solution relative to silicon germanium

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3160344B2 (en) * 1991-01-25 2001-04-25 アシュランド インコーポレーテッド Organic stripping composition
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
KR100554517B1 (en) 2004-04-14 2006-03-03 삼성전자주식회사 Cleaning solution for silicon germanium layer and cleaning method using the same
JP4968477B2 (en) 2005-08-19 2012-07-04 日産化学工業株式会社 Hard mask removal composition and removal method
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
JPWO2009044647A1 (en) 2007-10-04 2011-02-03 三菱瓦斯化学株式会社 Silicon etchant and etching method
US7994062B2 (en) 2009-10-30 2011-08-09 Sachem, Inc. Selective silicon etch process
US8753942B2 (en) 2010-12-01 2014-06-17 Intel Corporation Silicon and silicon germanium nanowire structures
US8912568B2 (en) 2011-06-20 2014-12-16 Semiconductor Manufacturing International (Beijing) Corporation Semiconductor device and manufacturing method thereof
US20140134778A1 (en) 2011-08-09 2014-05-15 Basf Se Aqueous alkaline compositions and method for treating the surface of silicon substrates
US8703004B2 (en) 2011-11-14 2014-04-22 Kabushiki Kaisha Toshiba Method for chemical planarization and chemical planarization apparatus
US8614123B2 (en) * 2011-11-28 2013-12-24 Globalfoundries Inc. Method of forming a semiconductor device by using sacrificial gate electrodes and sacrificial self-aligned contact structures
CN103633123B (en) * 2013-12-10 2016-07-27 中国科学院微电子研究所 A kind of nanowire substrate structure and preparation method thereof
JP2016054219A (en) 2014-09-03 2016-04-14 株式会社東芝 Chemical planarization method and chemical planarization device
US9873833B2 (en) * 2014-12-29 2018-01-23 Versum Materials Us, Llc Etchant solutions and method of use thereof
EP3127862B1 (en) 2015-08-06 2018-04-18 IMEC vzw A method of manufacturing a gate-all-around nanowire device comprising two different nanowires
KR102468776B1 (en) * 2015-09-21 2022-11-22 삼성전자주식회사 Composition for wet Etching of polysilicon and method for manufacturing semiconductor device using the same
US9716142B2 (en) 2015-10-12 2017-07-25 International Business Machines Corporation Stacked nanowires
US10400167B2 (en) * 2015-11-25 2019-09-03 Versum Materials Us, Llc Etching compositions and methods for using same
US9704962B1 (en) 2015-12-16 2017-07-11 Globalfoundries Inc. Horizontal gate all around nanowire transistor bottom isolation

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