SG10201902037UA - Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/germanium stack during manufacture of a semiconductor device - Google Patents
Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/germanium stack during manufacture of a semiconductor deviceInfo
- Publication number
- SG10201902037UA SG10201902037UA SG10201902037UA SG10201902037UA SG 10201902037U A SG10201902037U A SG 10201902037UA SG 10201902037U A SG10201902037U A SG 10201902037UA SG 10201902037U A SG10201902037U A SG 10201902037UA
- Authority
- SG
- Singapore
- Prior art keywords
- germanium
- silicon
- etching solution
- semiconductor device
- selectively removing
- Prior art date
Links
- 229910000577 Silicon-germanium Inorganic materials 0.000 title abstract 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title abstract 5
- 238000005530 etching Methods 0.000 title abstract 3
- 229910052732 germanium Inorganic materials 0.000 title abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 229910045601 alloy Inorganic materials 0.000 title abstract 2
- 239000000956 alloy Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 239000002738 chelating agent Substances 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 239000003112 inhibitor Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/16—Sulfur-containing compounds
- C23F11/165—Heterocyclic compounds containing sulfur as hetero atom
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Nanotechnology (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
OF THE DISCLOSURE ETCHING SOLUTION FOR SELECTIVELY REMOVING SILICON-GERMANIUM ALLOY FROM A SILICON-GERMANIUM/ GERMANIUM STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE Described herein is an etching solution comprising water; an oxidizer; a water- miscible organic solvent; a fluoride ion source; a corrosion inhibitor and optionally, a surfactant, optionally a buffer, optionally a chelating agent. Such compositions are useful for the selective removal of silicon-germanium over germanium from a microelectronic device having such material(s) thereon during its manufacture. FIG. - 31 -
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862641168P | 2018-03-09 | 2018-03-09 | |
US16/285,961 US10934484B2 (en) | 2018-03-09 | 2019-02-26 | Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201902037UA true SG10201902037UA (en) | 2019-10-30 |
Family
ID=65766814
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201902037U SG10201902037UA (en) | 2018-03-09 | 2019-03-07 | Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/germanium stack during manufacture of a semiconductor device |
Country Status (8)
Country | Link |
---|---|
US (1) | US10934484B2 (en) |
EP (1) | EP3537473B1 (en) |
JP (1) | JP6993998B2 (en) |
KR (1) | KR102332397B1 (en) |
CN (1) | CN110240907B (en) |
IL (1) | IL265202B2 (en) |
SG (1) | SG10201902037UA (en) |
TW (1) | TWI714013B (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190103282A1 (en) * | 2017-09-29 | 2019-04-04 | Versum Materials Us, Llc | Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device |
JP7450334B2 (en) * | 2018-12-27 | 2024-03-15 | 東京応化工業株式会社 | Etching solution and semiconductor device manufacturing method |
KR20210111289A (en) | 2019-01-11 | 2021-09-10 | 버슘머트리얼즈 유에스, 엘엘씨 | Hafnium oxide corrosion inhibitor |
US11164892B2 (en) * | 2019-07-01 | 2021-11-02 | Newport Fab, Llc | Semiconductor-on-insulator (SOI) device with reduced parasitic capacitance |
WO2021176913A1 (en) * | 2020-03-04 | 2021-09-10 | 富士フイルム株式会社 | Processing solution and processing solution container |
TWI824299B (en) * | 2020-09-22 | 2023-12-01 | 美商恩特葛瑞斯股份有限公司 | Etchant compositions |
US11424120B2 (en) | 2021-01-22 | 2022-08-23 | Tokyo Electron Limited | Plasma etching techniques |
KR20220119860A (en) * | 2021-02-22 | 2022-08-30 | 삼성전자주식회사 | Etching composition and method for fabricating semiconductor device by using the same |
KR20220126436A (en) * | 2021-03-09 | 2022-09-16 | 주식회사 이엔에프테크놀로지 | Etchant composition for display substrate |
CN114316990B (en) * | 2021-12-09 | 2023-04-07 | 湖北兴福电子材料股份有限公司 | Germanium etching solution with high etching cone angle |
US20230307240A1 (en) * | 2022-03-25 | 2023-09-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wet etching chemistry and method of forming semiconductor device using the same |
CN115595154A (en) * | 2022-08-31 | 2023-01-13 | 湖北兴福电子材料股份有限公司(Cn) | Selective etching solution for SiGe and Si |
CN115505390B (en) * | 2022-09-20 | 2023-07-11 | 湖北兴福电子材料股份有限公司 | High-selectivity germanium etching solution |
WO2024062877A1 (en) * | 2022-09-21 | 2024-03-28 | 富士フイルム株式会社 | Chemical liquid and processing method |
CN116144365B (en) * | 2023-01-30 | 2023-10-03 | 江苏美阳电子材料有限公司 | Buffer oxidation corrosive liquid and preparation method and application thereof |
Family Cites Families (22)
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US6833084B2 (en) * | 1999-04-05 | 2004-12-21 | Micron Technology, Inc. | Etching compositions |
US6987042B2 (en) * | 2003-05-30 | 2006-01-17 | International Business Machines Corporation | Method of forming a collar using selective SiGe/Amorphous Si Etch |
US7176041B2 (en) * | 2003-07-01 | 2007-02-13 | Samsung Electronics Co., Ltd. | PAA-based etchant, methods of using same, and resultant structures |
TWI283442B (en) | 2004-09-09 | 2007-07-01 | Sez Ag | Method for selective etching |
US20070179072A1 (en) * | 2006-01-30 | 2007-08-02 | Rao Madhukar B | Cleaning formulations |
JP4306724B2 (en) | 2006-12-19 | 2009-08-05 | セイコーエプソン株式会社 | Manufacturing method of semiconductor device |
TWI548738B (en) * | 2010-07-16 | 2016-09-11 | 安堤格里斯公司 | Aqueous cleaner for the removal of post-etch residues |
WO2013101907A1 (en) | 2011-12-28 | 2013-07-04 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
TWI655273B (en) * | 2013-03-04 | 2019-04-01 | 美商恩特葛瑞斯股份有限公司 | Compositions and methods for selectively etching titanium nitride |
WO2014178426A1 (en) * | 2013-05-02 | 2014-11-06 | 富士フイルム株式会社 | Etching method, etching liquid and etching liquid kit to be used in said method, and semiconductor substrate product manufacturing method |
US10920141B2 (en) | 2013-06-06 | 2021-02-16 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
CN112442374A (en) | 2013-07-31 | 2021-03-05 | 恩特格里斯公司 | Aqueous formulations with Cu/W compatibility for removal of metal hardmask and post-etch residues |
US10428271B2 (en) * | 2013-08-30 | 2019-10-01 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
US10475658B2 (en) | 2013-12-31 | 2019-11-12 | Entegris, Inc. | Formulations to selectively etch silicon and germanium |
TWI659088B (en) * | 2014-03-18 | 2019-05-11 | Fujifilm Electronic Materials U. S. A., Inc. | Etching composition |
TWI682989B (en) * | 2014-04-30 | 2020-01-21 | 日商富士軟片股份有限公司 | Etching liquid, etching method using the same, method for manufacturing semiconductor substrate products, and metal corrosion inhibitor |
JP6425342B2 (en) * | 2014-12-26 | 2018-11-21 | 富士フイルム株式会社 | Etching solution, etching method using the same, and method of manufacturing semiconductor substrate product |
US9976111B2 (en) * | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
TWI782893B (en) | 2015-07-09 | 2022-11-11 | 美商恩特葛瑞斯股份有限公司 | Method, kit and composition for selectively removing silicon germanide material |
KR102457249B1 (en) | 2015-09-18 | 2022-10-21 | 주식회사 이엔에프테크놀로지 | Etching Composition |
US10400167B2 (en) | 2015-11-25 | 2019-09-03 | Versum Materials Us, Llc | Etching compositions and methods for using same |
US10879076B2 (en) | 2017-08-25 | 2020-12-29 | Versum Materials Us, Llc | Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device |
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2019
- 2019-02-26 US US16/285,961 patent/US10934484B2/en active Active
- 2019-03-06 IL IL265202A patent/IL265202B2/en unknown
- 2019-03-07 SG SG10201902037U patent/SG10201902037UA/en unknown
- 2019-03-08 TW TW108107774A patent/TWI714013B/en active
- 2019-03-08 KR KR1020190026831A patent/KR102332397B1/en active IP Right Grant
- 2019-03-08 JP JP2019042453A patent/JP6993998B2/en active Active
- 2019-03-09 EP EP19161775.2A patent/EP3537473B1/en active Active
- 2019-03-11 CN CN201910180147.6A patent/CN110240907B/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR102332397B1 (en) | 2021-11-30 |
US10934484B2 (en) | 2021-03-02 |
JP6993998B2 (en) | 2022-01-14 |
TW201938844A (en) | 2019-10-01 |
EP3537473B1 (en) | 2024-05-01 |
EP3537473A1 (en) | 2019-09-11 |
IL265202A (en) | 2019-05-30 |
IL265202B (en) | 2022-10-01 |
KR20190106803A (en) | 2019-09-18 |
CN110240907A (en) | 2019-09-17 |
JP2019165218A (en) | 2019-09-26 |
CN110240907B (en) | 2021-09-17 |
TWI714013B (en) | 2020-12-21 |
IL265202B2 (en) | 2023-02-01 |
US20190276739A1 (en) | 2019-09-12 |
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