IL261357A - Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device - Google Patents
Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor deviceInfo
- Publication number
- IL261357A IL261357A IL261357A IL26135718A IL261357A IL 261357 A IL261357 A IL 261357A IL 261357 A IL261357 A IL 261357A IL 26135718 A IL26135718 A IL 26135718A IL 261357 A IL261357 A IL 261357A
- Authority
- IL
- Israel
- Prior art keywords
- silicon
- germanium
- semiconductor device
- etching solution
- during manufacture
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 title 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title 2
- 229910052710 silicon Inorganic materials 0.000 title 2
- 239000010703 silicon Substances 0.000 title 2
- 229910045601 alloy Inorganic materials 0.000 title 1
- 239000000956 alloy Substances 0.000 title 1
- 238000005530 etching Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
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- H01L29/66742—Thin film unipolar transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- Silicon Compounds (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762550491P | 2017-08-25 | 2017-08-25 | |
US16/109,172 US10934485B2 (en) | 2017-08-25 | 2018-08-22 | Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
IL261357A true IL261357A (en) | 2019-02-28 |
IL261357B IL261357B (en) | 2022-10-01 |
IL261357B2 IL261357B2 (en) | 2023-02-01 |
Family
ID=63578918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL261357A IL261357B2 (en) | 2017-08-25 | 2018-08-23 | Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device |
Country Status (8)
Country | Link |
---|---|
US (1) | US10934485B2 (en) |
EP (1) | EP3447109B1 (en) |
JP (1) | JP6892418B2 (en) |
KR (1) | KR102241352B1 (en) |
CN (1) | CN109423288B (en) |
IL (1) | IL261357B2 (en) |
SG (1) | SG10201807214WA (en) |
TW (1) | TWI773809B (en) |
Families Citing this family (33)
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US11031239B2 (en) | 2018-06-29 | 2021-06-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Germanium nanosheets and methods of forming the same |
US10680063B2 (en) * | 2018-09-07 | 2020-06-09 | International Business Machines Corporation | Method of manufacturing stacked SiGe nanotubes |
US11180697B2 (en) | 2018-11-19 | 2021-11-23 | Versum Materials Us, Llc | Etching solution having silicon oxide corrosion inhibitor and method of using the same |
JP7450334B2 (en) * | 2018-12-27 | 2024-03-15 | 東京応化工業株式会社 | Etching solution and semiconductor device manufacturing method |
KR102678071B1 (en) | 2019-01-08 | 2024-06-24 | 동우 화인켐 주식회사 | Etchant composition for etching silicon layer and method of forming pattern using the same |
KR102444014B1 (en) | 2019-02-05 | 2022-09-15 | 가부시키가이샤 도쿠야마 | Silicon etching solution and method for producing silicon device using the etching solution |
EP3959291A4 (en) * | 2019-03-11 | 2023-07-19 | Versum Materials US, LLC | Etching solution and method for aluminum nitride |
SG11202113308RA (en) * | 2019-06-13 | 2021-12-30 | Versum Materials Us Llc | Liquid compositions for selectively removing polysilicon over p-doped silicon and silicon-germanium during manufacture of a semiconductor device |
JP7340969B2 (en) * | 2019-06-28 | 2023-09-08 | 東京応化工業株式会社 | Silicon etching solution, silicon etching method, and silicon fin structure manufacturing method |
CN110438504A (en) * | 2019-08-19 | 2019-11-12 | 江阴江化微电子材料股份有限公司 | A kind of alum gate Ke Kai area's silicon slag removes composition and silicon slag sweep-out method |
TW202129061A (en) | 2019-10-02 | 2021-08-01 | 美商應用材料股份有限公司 | Gate all around i/o engineering |
KR20220118520A (en) * | 2019-12-20 | 2022-08-25 | 버슘머트리얼즈 유에스, 엘엘씨 | CO/CU selective wet etchant |
US11342409B2 (en) * | 2020-03-25 | 2022-05-24 | Intel Corporation | Isolation regions in integrated circuit structures |
US20230129238A1 (en) * | 2020-03-31 | 2023-04-27 | Nissan Chemical Corporation | Cleaning agent composition and method for producing processed semiconductor substrate |
WO2022025163A1 (en) | 2020-07-31 | 2022-02-03 | 株式会社トクヤマ | Silicon etching liquid, and method for producing silicon device and method for processing silicon substrate, each using said etching liquid |
WO2022025161A1 (en) | 2020-07-31 | 2022-02-03 | 株式会社トクヤマ | Silicon etching liquid, and method for producing silicon device and method for processing silicon substrate, each using said etching liquid |
KR20220033141A (en) * | 2020-09-09 | 2022-03-16 | 동우 화인켐 주식회사 | Silicon etchant composition, pattern formation method and manufacturing method of array substrate using the etchant composition, and array substrate manufactured therefrom |
US20240124775A1 (en) | 2020-12-24 | 2024-04-18 | Tokuyama Corporation | Silicon etching liquid, and method for producing silicon devices and method for processing substrates, each using said etching liquid |
KR20230058459A (en) | 2021-01-12 | 2023-05-03 | 미쯔비시 케미컬 주식회사 | Etching composition, etching method, semiconductor device manufacturing method, and gate all-around transistor manufacturing method |
US20240112917A1 (en) | 2021-02-10 | 2024-04-04 | Tokuyama Corporation | Method for processing substrate, and method for manufacturing silicon device comprising said processing method |
WO2022190903A1 (en) * | 2021-03-11 | 2022-09-15 | 富士フイルム株式会社 | Composition for treating semiconductor and method for treating object-to-be-treated |
US20220290049A1 (en) * | 2021-03-12 | 2022-09-15 | LCY Chemical Corp. | Composition of etchant, method for forming semiconductor device using the same, and semiconductor device |
CN117616544A (en) | 2021-07-08 | 2024-02-27 | 巴斯夫欧洲公司 | Use of a composition for selectively etching silicon and method for selectively etching silicon |
JP2023042176A (en) * | 2021-09-14 | 2023-03-27 | 株式会社東芝 | Etching method |
JPWO2023047959A1 (en) * | 2021-09-21 | 2023-03-30 | ||
WO2023079908A1 (en) * | 2021-11-02 | 2023-05-11 | 三菱ケミカル株式会社 | Etchant, etching method, method for producing semiconductor device, and method for producing gate-all-around transistor |
US20230151274A1 (en) * | 2021-11-15 | 2023-05-18 | Cj Technology Co., Ltd. | Method for selective etching Si in the presence of silicon nitride, its composition and application thereof |
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TW202342821A (en) * | 2022-02-24 | 2023-11-01 | 日商三菱瓦斯化學股份有限公司 | Composition, and semiconductor substrate manufacturing method and etching method using same |
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WO2024166976A1 (en) * | 2023-02-10 | 2024-08-15 | 三菱ケミカル株式会社 | Etching composition, etching method, production method for semiconductor device, and production method for gate-all-around transistor |
WO2024190648A1 (en) * | 2023-03-14 | 2024-09-19 | 三菱ケミカル株式会社 | Etching composition, method for producing etching composition, etching method, method for producing semiconductor device, and method for producing gate-all-around transistor |
CN117417747A (en) * | 2023-09-13 | 2024-01-19 | 湖北兴福电子材料股份有限公司 | Silicon selective etching solution relative to silicon germanium |
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JP2019050364A (en) | 2019-03-28 |
KR20190022414A (en) | 2019-03-06 |
CN109423288A (en) | 2019-03-05 |
TW201920613A (en) | 2019-06-01 |
IL261357B2 (en) | 2023-02-01 |
TWI773809B (en) | 2022-08-11 |
CN109423288B (en) | 2021-02-23 |
US10934485B2 (en) | 2021-03-02 |
IL261357B (en) | 2022-10-01 |
EP3447109B1 (en) | 2020-08-05 |
EP3447109A1 (en) | 2019-02-27 |
JP6892418B2 (en) | 2021-06-23 |
US20190085240A1 (en) | 2019-03-21 |
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KR102241352B1 (en) | 2021-04-15 |
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