SG10201601329UA - Method for achieving ultra-high selectivity while etching silicon nitride - Google Patents

Method for achieving ultra-high selectivity while etching silicon nitride

Info

Publication number
SG10201601329UA
SG10201601329UA SG10201601329UA SG10201601329UA SG10201601329UA SG 10201601329U A SG10201601329U A SG 10201601329UA SG 10201601329U A SG10201601329U A SG 10201601329UA SG 10201601329U A SG10201601329U A SG 10201601329UA SG 10201601329U A SG10201601329U A SG 10201601329UA
Authority
SG
Singapore
Prior art keywords
silicon nitride
high selectivity
etching silicon
achieving ultra
ultra
Prior art date
Application number
SG10201601329UA
Inventor
H Zhu Helen
Marquez Linda
Yaqoob Faisal
Park Pilyeon
L Berry Ivan Iii
A Angelov Ivelin
Hong Park Joon
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201601329UA publication Critical patent/SG10201601329UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
SG10201601329UA 2015-02-23 2016-02-23 Method for achieving ultra-high selectivity while etching silicon nitride SG10201601329UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562119670P 2015-02-23 2015-02-23
US14/676,710 US9911620B2 (en) 2015-02-23 2015-04-01 Method for achieving ultra-high selectivity while etching silicon nitride

Publications (1)

Publication Number Publication Date
SG10201601329UA true SG10201601329UA (en) 2016-09-29

Family

ID=56693170

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201601329UA SG10201601329UA (en) 2015-02-23 2016-02-23 Method for achieving ultra-high selectivity while etching silicon nitride

Country Status (6)

Country Link
US (2) US9911620B2 (en)
JP (1) JP2016157940A (en)
KR (2) KR102708853B1 (en)
CN (1) CN105914146B (en)
SG (1) SG10201601329UA (en)
TW (1) TW201642339A (en)

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US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
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Also Published As

Publication number Publication date
US20180158692A1 (en) 2018-06-07
CN105914146B (en) 2019-03-15
JP2016157940A (en) 2016-09-01
CN105914146A (en) 2016-08-31
TW201642339A (en) 2016-12-01
US9911620B2 (en) 2018-03-06
KR20160103184A (en) 2016-08-31
US20160247688A1 (en) 2016-08-25
KR102708853B1 (en) 2024-09-23
KR20240144026A (en) 2024-10-02

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