SG10201508477VA - Methods for singulating semiconductor wafer - Google Patents
Methods for singulating semiconductor waferInfo
- Publication number
- SG10201508477VA SG10201508477VA SG10201508477VA SG10201508477VA SG10201508477VA SG 10201508477V A SG10201508477V A SG 10201508477VA SG 10201508477V A SG10201508477V A SG 10201508477VA SG 10201508477V A SG10201508477V A SG 10201508477VA SG 10201508477V A SG10201508477V A SG 10201508477VA
- Authority
- SG
- Singapore
- Prior art keywords
- methods
- semiconductor wafer
- singulating semiconductor
- singulating
- wafer
- Prior art date
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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US201462062967P | 2014-10-13 | 2014-10-13 |
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CN (1) | CN105514038B (en) |
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US20150147850A1 (en) * | 2013-11-25 | 2015-05-28 | Infineon Technologies Ag | Methods for processing a semiconductor workpiece |
SG10201508477VA (en) * | 2014-10-13 | 2016-05-30 | Utac Headquarters Pte Ltd | Methods for singulating semiconductor wafer |
JP6467592B2 (en) * | 2016-02-04 | 2019-02-13 | パナソニックIpマネジメント株式会社 | Device chip manufacturing method, electronic component mounting structure manufacturing method, and electronic component mounting structure |
DE102016109693B4 (en) | 2016-05-25 | 2022-10-27 | Infineon Technologies Ag | Process for separating semiconductor dies from a semiconductor substrate and semiconductor substrate arrangement |
US9905466B2 (en) * | 2016-06-28 | 2018-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer partitioning method and device formed |
GB201611652D0 (en) * | 2016-07-04 | 2016-08-17 | Spts Technologies Ltd | Method of detecting a condition |
CN106098535A (en) * | 2016-07-12 | 2016-11-09 | 武汉新芯集成电路制造有限公司 | Bonding wafer manufacturing method |
JP6735653B2 (en) * | 2016-10-24 | 2020-08-05 | 株式会社ディスコ | Wafer division method |
DE102017212858A1 (en) * | 2017-07-26 | 2019-01-31 | Disco Corporation | Method for processing a substrate |
GB2568480A (en) * | 2017-11-16 | 2019-05-22 | Owlstone Inc | Method of manufacture for a ion mobility filter |
JP6994646B2 (en) * | 2018-01-17 | 2022-01-14 | パナソニックIpマネジメント株式会社 | Method of manufacturing element chips |
CN110634796A (en) * | 2018-06-25 | 2019-12-31 | 半导体元件工业有限责任公司 | Method for processing electronic die and semiconductor wafer and singulation method of die |
US10916474B2 (en) * | 2018-06-25 | 2021-02-09 | Semiconductor Components Industries, Llc | Method of reducing residual contamination in singulated semiconductor die |
KR20200034503A (en) * | 2018-09-21 | 2020-03-31 | 삼성전자주식회사 | Method of sawing substrate and method of singulating semiconductor chips |
JP7210100B2 (en) * | 2018-12-03 | 2023-01-23 | 株式会社ディスコ | Wafer processing method |
JP7139065B2 (en) * | 2018-12-03 | 2022-09-20 | 株式会社ディスコ | Wafer processing method |
TWI689980B (en) * | 2019-03-20 | 2020-04-01 | 華邦電子股份有限公司 | Method of wafer dicing and die |
GB201918333D0 (en) * | 2019-12-12 | 2020-01-29 | Spts Technologies Ltd | A semiconductor wafer dicing process |
TWI783577B (en) * | 2020-07-15 | 2022-11-11 | 新加坡商Pep創新私人有限公司 | Semiconductor device with buffer layer and method for processing semiconductor wafer |
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JP4387007B2 (en) | 1999-10-26 | 2009-12-16 | 株式会社ディスコ | Method for dividing semiconductor wafer |
US6686225B2 (en) * | 2001-07-27 | 2004-02-03 | Texas Instruments Incorporated | Method of separating semiconductor dies from a wafer |
US6642127B2 (en) * | 2001-10-19 | 2003-11-04 | Applied Materials, Inc. | Method for dicing a semiconductor wafer |
JP2003257896A (en) | 2002-02-28 | 2003-09-12 | Disco Abrasive Syst Ltd | Method for dicing semiconductor wafer |
US8012857B2 (en) | 2007-08-07 | 2011-09-06 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
US7989319B2 (en) | 2007-08-07 | 2011-08-02 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
US7781310B2 (en) | 2007-08-07 | 2010-08-24 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
KR101094450B1 (en) | 2009-06-05 | 2011-12-15 | 에스티에스반도체통신 주식회사 | Dicing method using a plasma etching |
JP2013102039A (en) * | 2011-11-08 | 2013-05-23 | Disco Abrasive Syst Ltd | Semiconductor wafer processing method |
US8652940B2 (en) * | 2012-04-10 | 2014-02-18 | Applied Materials, Inc. | Wafer dicing used hybrid multi-step laser scribing process with plasma etch |
US8871550B2 (en) * | 2012-05-24 | 2014-10-28 | Infineon Technologies Ag | Method for processing a wafer at unmasked areas and previously masked areas to reduce a wafer thickness |
US9252057B2 (en) * | 2012-10-17 | 2016-02-02 | Applied Materials, Inc. | Laser and plasma etch wafer dicing with partial pre-curing of UV release dicing tape for film frame wafer application |
US9041198B2 (en) * | 2013-10-22 | 2015-05-26 | Applied Materials, Inc. | Maskless hybrid laser scribing and plasma etching wafer dicing process |
US8912078B1 (en) * | 2014-04-16 | 2014-12-16 | Applied Materials, Inc. | Dicing wafers having solder bumps on wafer backside |
US9390993B2 (en) * | 2014-08-15 | 2016-07-12 | Broadcom Corporation | Semiconductor border protection sealant |
SG10201508477VA (en) * | 2014-10-13 | 2016-05-30 | Utac Headquarters Pte Ltd | Methods for singulating semiconductor wafer |
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TW201621996A (en) | 2016-06-16 |
US9570314B2 (en) | 2017-02-14 |
CN105514038A (en) | 2016-04-20 |
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