ATE488569T1 - Reinigungsmittel, verfahren zur reinigung von halbleitersubstrat sowie verfahren zur ausbildung der leitungsbahnen auf halbleitersubstrat - Google Patents

Reinigungsmittel, verfahren zur reinigung von halbleitersubstrat sowie verfahren zur ausbildung der leitungsbahnen auf halbleitersubstrat

Info

Publication number
ATE488569T1
ATE488569T1 AT04746420T AT04746420T ATE488569T1 AT E488569 T1 ATE488569 T1 AT E488569T1 AT 04746420 T AT04746420 T AT 04746420T AT 04746420 T AT04746420 T AT 04746420T AT E488569 T1 ATE488569 T1 AT E488569T1
Authority
AT
Austria
Prior art keywords
semiconductor substrate
cleaning
conductive paths
forming conductive
cleaning agent
Prior art date
Application number
AT04746420T
Other languages
English (en)
Inventor
Shigeru Yokoi
Kazumasa Wakiya
Takayuki Haraguchi
Makarem Hussein
Lana Jong
Shan Clark
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd, Intel Corp filed Critical Tokyo Ohka Kogyo Co Ltd
Application granted granted Critical
Publication of ATE488569T1 publication Critical patent/ATE488569T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/267—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT04746420T 2003-06-18 2004-06-18 Reinigungsmittel, verfahren zur reinigung von halbleitersubstrat sowie verfahren zur ausbildung der leitungsbahnen auf halbleitersubstrat ATE488569T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US47914603P 2003-06-18 2003-06-18
PCT/JP2004/008951 WO2004113486A1 (en) 2003-06-18 2004-06-18 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate

Publications (1)

Publication Number Publication Date
ATE488569T1 true ATE488569T1 (de) 2010-12-15

Family

ID=33539152

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04746420T ATE488569T1 (de) 2003-06-18 2004-06-18 Reinigungsmittel, verfahren zur reinigung von halbleitersubstrat sowie verfahren zur ausbildung der leitungsbahnen auf halbleitersubstrat

Country Status (9)

Country Link
US (1) US7442675B2 (de)
EP (1) EP1641908B1 (de)
JP (1) JP4609898B2 (de)
KR (1) KR100748903B1 (de)
CN (1) CN1849386B (de)
AT (1) ATE488569T1 (de)
DE (1) DE602004030121D1 (de)
TW (1) TWI275642B (de)
WO (1) WO2004113486A1 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US20070099810A1 (en) * 2005-10-27 2007-05-03 Hiroshi Matsunaga Cleaning liquid and cleaning method
CN101484276B (zh) * 2006-07-05 2011-07-20 日立化成工业株式会社 Cmp用研磨液及研磨方法
US20080070820A1 (en) * 2006-09-19 2008-03-20 Wescor, Inc. Stain removing cleaning solutions
EP2082024A4 (de) * 2006-09-25 2010-11-17 Advanced Tech Materials Zusammensetzungen und verfahren zur entfernung von fotolack bei einer wafer-nacharbeit
CN101187788A (zh) * 2006-11-17 2008-05-28 安集微电子（上海）有限公司 低蚀刻性较厚光刻胶清洗液
US20100081595A1 (en) * 2007-01-22 2010-04-01 Freescale Semiconductor, Inc Liquid cleaning composition and method for cleaning semiconductor devices
KR101488265B1 (ko) * 2007-09-28 2015-02-02 삼성디스플레이 주식회사 박리 조성물 및 박리 방법
JP2009197175A (ja) * 2008-02-25 2009-09-03 The Inctec Inc 洗浄剤原液
US20110048048A1 (en) * 2009-03-25 2011-03-03 Thomas Gielda Personal Cooling System
EP2312618B1 (de) * 2009-10-14 2016-02-10 Rohm and Haas Electronic Materials LLC Verfahren zur Reinigung und Mikroätzung von Halbleiter-Wafern
JP5498768B2 (ja) * 2009-12-02 2014-05-21 東京応化工業株式会社 リソグラフィー用洗浄液及び配線形成方法
JP5404459B2 (ja) * 2010-02-08 2014-01-29 東京応化工業株式会社 リソグラフィー用洗浄液及び配線形成方法
CN102147576B (zh) * 2010-02-09 2013-02-20 京东方科技集团股份有限公司 光刻胶剥离液组合物
US8128755B2 (en) * 2010-03-03 2012-03-06 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Cleaning solvent and cleaning method for metallic compound
JP6215511B2 (ja) * 2010-07-16 2017-10-18 栗田工業株式会社 ボイラ用防食剤
FR2965567B1 (fr) * 2010-10-05 2013-12-27 Arkema France Composition de nettoyage de polymeres
CN102965214A (zh) * 2011-08-31 2013-03-13 东友Fine-Chem股份有限公司 清洗组合物
CN102634809B (zh) * 2012-04-27 2013-11-13 东莞市广华化工有限公司 一种二次干膜去膜液
JP6151484B2 (ja) * 2012-06-11 2017-06-21 東京応化工業株式会社 リソグラフィー用洗浄液及び配線形成方法
US9587208B2 (en) 2012-06-13 2017-03-07 Mitsubishi Gas Chemical Company, Inc. Cleaning liquid composition, method for cleaning semiconductor element, and method for manufacturing semiconductor element
KR101420571B1 (ko) * 2013-07-05 2014-07-16 주식회사 동진쎄미켐 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법
TWI584370B (zh) * 2013-08-27 2017-05-21 東京威力科創股份有限公司 A substrate processing method, a substrate processing apparatus, and a memory medium
JP6022490B2 (ja) * 2013-08-27 2016-11-09 東京エレクトロン株式会社 基板処理方法、基板処理システムおよび記憶媒体
US20150064911A1 (en) 2013-08-27 2015-03-05 Tokyo Electron Limited Substrate processing method, substrate processing apparatus and storage medium
US10072237B2 (en) * 2015-08-05 2018-09-11 Versum Materials Us, Llc Photoresist cleaning composition used in photolithography and a method for treating substrate therewith
US10400167B2 (en) * 2015-11-25 2019-09-03 Versum Materials Us, Llc Etching compositions and methods for using same
TWI783640B (zh) * 2016-03-01 2022-11-11 日商東京應化工業股份有限公司 半導體基板或裝置之洗淨液
JP6561901B2 (ja) * 2016-04-15 2019-08-21 信越化学工業株式会社 金属表面処理剤
JP6674628B2 (ja) * 2016-04-26 2020-04-01 信越化学工業株式会社 洗浄剤組成物及び薄型基板の製造方法
CN109686664A (zh) * 2017-10-18 2019-04-26 无锡华瑛微电子技术有限公司 一种含有四烷基氢氧化铵的光刻胶去除液及光刻胶的去除方法
US10761423B2 (en) 2017-08-30 2020-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical composition for tri-layer removal
US11353794B2 (en) 2017-12-22 2022-06-07 Versum Materials Us, Llc Photoresist stripper
EP3502225B1 (de) * 2017-12-22 2021-09-01 Versum Materials US, LLC Photolackentferner
TWI692679B (zh) * 2017-12-22 2020-05-01 美商慧盛材料美國責任有限公司 光阻剝除劑
JP7817815B2 (ja) * 2020-11-30 2026-02-19 花王株式会社 樹脂マスク剥離用洗浄剤組成物
CN117015845A (zh) 2021-03-08 2023-11-07 三菱瓦斯化学株式会社 半导体基板清洗用组合物及清洗方法
CN116218610B (zh) * 2021-12-06 2024-07-09 上海新阳半导体材料股份有限公司 一种聚酰亚胺清洗液的制备方法
CN115097703A (zh) * 2022-06-27 2022-09-23 北京华卓精科科技股份有限公司 光刻胶清洗液及其制备方法和清洗方法
JP7777163B2 (ja) * 2024-02-29 2025-11-27 花王株式会社 樹脂マスクの剥離方法
WO2025254054A1 (ja) * 2024-06-03 2025-12-11 花王株式会社 剥離剤組成物
US20260028553A1 (en) 2024-07-26 2026-01-29 Tokyo Ohka Kogyo Co., Ltd. Processing solution, method for manufacturing processing solution, method for processing substrate, and method for manufacturing semiconductor device

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3980587A (en) 1974-08-16 1976-09-14 G. T. Schjeldahl Company Stripper composition
DE3530282A1 (de) * 1985-08-24 1987-03-05 Hoechst Ag Verfahren zum entschichten von lichtgehaerteten photoresistschichten
DE3638629A1 (de) * 1986-11-11 1988-05-26 Schering Ag Mittel und verfahren zur entfernung von fotoresisten
US4964919A (en) * 1988-12-27 1990-10-23 Nalco Chemical Company Cleaning of silicon wafers with an aqueous solution of KOH and a nitrogen-containing compound
CN1051756A (zh) * 1989-11-11 1991-05-29 孙启基 一种水基电子清洗制剂
JP2836263B2 (ja) 1991-01-24 1998-12-14 三菱化学株式会社 集積回路封止素子用洗浄液
US5139607A (en) * 1991-04-23 1992-08-18 Act, Inc. Alkaline stripping compositions
JP3264405B2 (ja) 1994-01-07 2002-03-11 三菱瓦斯化学株式会社 半導体装置洗浄剤および半導体装置の製造方法
JP2950407B2 (ja) * 1996-01-29 1999-09-20 東京応化工業株式会社 電子部品製造用基材の製造方法
KR100497835B1 (ko) * 1997-01-27 2005-09-08 미쓰비시 가가꾸 가부시키가이샤 표면처리조성물및이를이용한기판의표면처리방법
JPH10289891A (ja) 1997-04-11 1998-10-27 Mitsubishi Gas Chem Co Inc 半導体回路用洗浄剤及びそれを用いた半導体回路の製造方法
US6060439A (en) * 1997-09-29 2000-05-09 Kyzen Corporation Cleaning compositions and methods for cleaning resin and polymeric materials used in manufacture
US5962197A (en) * 1998-03-27 1999-10-05 Analyze Inc. Alkaline organic photoresist stripper
US20010039251A1 (en) * 1998-06-12 2001-11-08 Krishna G. Sachdev Removal of screening paste residue with quaternary ammonium hydroxide-based aqueous cleaning compositions
TW500831B (en) 1999-01-20 2002-09-01 Sumitomo Chemical Co Metal-corrosion inhibitor and cleaning liquid
KR100360397B1 (ko) 1999-11-26 2002-11-18 삼성전자 주식회사 레지스트 제거용 조성물 및 이를 이용한 레지스트 제거 방법
TWI243204B (en) * 2000-02-04 2005-11-11 Sumitomo Chemical Co Electronic parts cleaning solution
JP2001244228A (ja) 2000-02-29 2001-09-07 Mitsubishi Materials Silicon Corp 半導体基板の洗浄液及び洗浄方法
DE60126906T2 (de) * 2000-06-30 2007-11-08 Tokyo Electron Ltd. Herstellungsverfahren für ein halbleiterbauelement
JP2002062668A (ja) * 2000-08-14 2002-02-28 Mitsubishi Gas Chem Co Inc フォトレジストの剥離方法
JP3738996B2 (ja) * 2002-10-10 2006-01-25 東京応化工業株式会社 ホトリソグラフィー用洗浄液および基板の処理方法
JP2002357908A (ja) 2001-05-31 2002-12-13 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液
JP4945857B2 (ja) * 2001-06-13 2012-06-06 Ｊｓｒ株式会社 研磨パッド洗浄用組成物及び研磨パッド洗浄方法
MY131912A (en) 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
JP3799026B2 (ja) * 2002-03-29 2006-07-19 三洋化成工業株式会社 アルカリ洗浄剤

Also Published As

Publication number Publication date
WO2004113486A1 (en) 2004-12-29
US7442675B2 (en) 2008-10-28
KR100748903B1 (ko) 2007-08-13
KR20060086844A (ko) 2006-08-01
CN1849386A (zh) 2006-10-18
US20040259761A1 (en) 2004-12-23
JP4609898B2 (ja) 2011-01-12
TWI275642B (en) 2007-03-11
JP2006527783A (ja) 2006-12-07
DE602004030121D1 (de) 2010-12-30
EP1641908A1 (de) 2006-04-05
EP1641908B1 (de) 2010-11-17
CN1849386B (zh) 2010-07-28

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