WO2008120467A1 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
WO2008120467A1
WO2008120467A1 PCT/JP2008/000732 JP2008000732W WO2008120467A1 WO 2008120467 A1 WO2008120467 A1 WO 2008120467A1 JP 2008000732 W JP2008000732 W JP 2008000732W WO 2008120467 A1 WO2008120467 A1 WO 2008120467A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor wafer
protection film
semiconductor device
manufacturing semiconductor
attracting
Prior art date
Application number
PCT/JP2008/000732
Other languages
English (en)
French (fr)
Inventor
Osamu Kusumoto
Chiaki Kudou
Kunimasa Takahashi
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to US12/593,141 priority Critical patent/US7772098B2/en
Priority to JP2009507411A priority patent/JP4348408B2/ja
Publication of WO2008120467A1 publication Critical patent/WO2008120467A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

　第１の面（主面）１ａおよび第２の面（裏面）１ｂを有する半導体ウェハ１の一方の面上に保護膜２を形成する。４００°C以上に加熱された静電チャック６の吸着面に半導体ウェハ１を吸着させるとき、保護膜２を介して吸着面に半導体ウェハ１を吸着させる。半導体ウェハ１を４００°C以上に加熱した状態で、半導体ウェハ１のうち保護膜２が形成されていない側の面に対してイオン注入を行う。その後、保護膜２を半導体ウェハ１から除去する。
PCT/JP2008/000732 2007-03-29 2008-03-26 半導体装置の製造方法 WO2008120467A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/593,141 US7772098B2 (en) 2007-03-29 2008-03-26 Method for manufacturing semiconductor device
JP2009507411A JP4348408B2 (ja) 2007-03-29 2008-03-26 半導体装置の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-088342 2007-03-29
JP2007088342 2007-03-29

Publications (1)

Publication Number Publication Date
WO2008120467A1 true WO2008120467A1 (ja) 2008-10-09

Family

ID=39808053

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PCT/JP2008/000732 WO2008120467A1 (ja) 2007-03-29 2008-03-26 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US7772098B2 (ja)
JP (1) JP4348408B2 (ja)
WO (1) WO2008120467A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009135127A (ja) * 2007-11-28 2009-06-18 Bridgestone Corp 炭化ケイ素ウェハの保持方法及びウェハ保持具
WO2010095369A1 (ja) * 2009-02-20 2010-08-26 昭和電工株式会社 炭化珪素半導体装置の製造方法
JP2010238789A (ja) * 2009-03-30 2010-10-21 Dainippon Screen Mfg Co Ltd 熱処理用サセプタおよび熱処理装置
WO2010131572A1 (ja) * 2009-05-11 2010-11-18 住友電気工業株式会社 半導体装置
JP2011253915A (ja) * 2010-06-02 2011-12-15 Shin Etsu Handotai Co Ltd シリコンウェーハ
WO2015019707A1 (ja) * 2013-08-06 2015-02-12 住友電気工業株式会社 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法
WO2015025628A1 (ja) * 2013-08-21 2015-02-26 住友電気工業株式会社 半導体装置の製造方法
JP2015154061A (ja) * 2014-02-19 2015-08-24 住友電気工業株式会社 半導体装置の製造方法
WO2024135476A1 (ja) * 2022-12-21 2024-06-27 東京エレクトロン株式会社 基板処理方法、基板処理装置、及び基板処理システム

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4348408B2 (ja) * 2007-03-29 2009-10-21 パナソニック株式会社 半導体装置の製造方法
JP5317509B2 (ja) * 2008-03-27 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置および方法
US8580693B2 (en) * 2010-08-27 2013-11-12 Applied Materials, Inc. Temperature enhanced electrostatic chucking in plasma processing apparatus
CN103065997B (zh) * 2011-10-19 2015-08-05 中芯国际集成电路制造(上海)有限公司 晶圆承载设备及晶圆承载的方法
CN103066000B (zh) * 2011-10-19 2015-11-25 中芯国际集成电路制造(上海)有限公司 晶圆承载设备及晶圆承载的方法
JP2015065318A (ja) * 2013-09-25 2015-04-09 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US11594441B2 (en) * 2021-04-09 2023-02-28 Applied Materials, Inc. Handling for high resistivity substrates
US12094716B2 (en) 2021-09-13 2024-09-17 Applied Materials, Inc. Chambers and coatings for reducing backside damage

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JP2003086816A (ja) * 2001-09-07 2003-03-20 Matsushita Electric Ind Co Ltd ＳｉＣ基板、ＳｉＣ半導体素子及びその製造方法
JP2003142467A (ja) * 2001-10-31 2003-05-16 Dainippon Screen Mfg Co Ltd 薄膜形成装置
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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009135127A (ja) * 2007-11-28 2009-06-18 Bridgestone Corp 炭化ケイ素ウェハの保持方法及びウェハ保持具
WO2010095369A1 (ja) * 2009-02-20 2010-08-26 昭和電工株式会社 炭化珪素半導体装置の製造方法
JP2010192836A (ja) * 2009-02-20 2010-09-02 Showa Denko Kk 炭化珪素半導体装置の製造方法
JP2010238789A (ja) * 2009-03-30 2010-10-21 Dainippon Screen Mfg Co Ltd 熱処理用サセプタおよび熱処理装置
WO2010131572A1 (ja) * 2009-05-11 2010-11-18 住友電気工業株式会社 半導体装置
CN102422424A (zh) * 2009-05-11 2012-04-18 住友电气工业株式会社 半导体器件
US8168515B2 (en) 2009-05-11 2012-05-01 Sumitomo Electric Industries, Ltd. Method for manufacturing semiconductor substrate
JP2011253915A (ja) * 2010-06-02 2011-12-15 Shin Etsu Handotai Co Ltd シリコンウェーハ
WO2015019707A1 (ja) * 2013-08-06 2015-02-12 住友電気工業株式会社 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法
JP2015032787A (ja) * 2013-08-06 2015-02-16 住友電気工業株式会社 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法
US10050109B2 (en) 2013-08-06 2018-08-14 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor substrate, method for manufacturing silicon carbide semiconductor substrate, and method for manufacturing silicon carbide semiconductor device
WO2015025628A1 (ja) * 2013-08-21 2015-02-26 住友電気工業株式会社 半導体装置の製造方法
JP2015041669A (ja) * 2013-08-21 2015-03-02 住友電気工業株式会社 半導体装置の製造方法
US9887101B2 (en) 2013-08-21 2018-02-06 Sumitomo Electric Industries, Ltd. Method for manufacturing semiconductor device
JP2015154061A (ja) * 2014-02-19 2015-08-24 住友電気工業株式会社 半導体装置の製造方法
WO2024135476A1 (ja) * 2022-12-21 2024-06-27 東京エレクトロン株式会社 基板処理方法、基板処理装置、及び基板処理システム

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JP4348408B2 (ja) 2009-10-21
US7772098B2 (en) 2010-08-10
JPWO2008120467A1 (ja) 2010-07-15
US20100093161A1 (en) 2010-04-15

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