JPS6467976A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6467976A JPS6467976A JP22504787A JP22504787A JPS6467976A JP S6467976 A JPS6467976 A JP S6467976A JP 22504787 A JP22504787 A JP 22504787A JP 22504787 A JP22504787 A JP 22504787A JP S6467976 A JPS6467976 A JP S6467976A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- grooves
- openings
- groove
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To accurately and easily form a semiconductor substrate in a desired thickness by forming a groove of depth corresponding to a predetermined thickness to be formed on a first main surface of the substrate, and reducing the thickness of the substrate until it coincides with the depth of the groove from a second main surface side. CONSTITUTION:A silicon substrate 1 formed with openings 6a, 6b, 6c in an oxide film 2 is dipped in potassium hydroxide solution and anisotropically etched. Then, grooves 8a, 8b, 8a of V-shaped section in which the depths are deepened in the order of the opening widths, i.e, the openings 6a, 6b, 6c. On the other hand, grooves 9a, 9b are enlarged by etching the substrate 1 from openings 7a, 7b formed on its rear face, and the bottom of the groove 9b arrives at grooves 8c, 8b, 8a in this order. Here, the presence or absence of penetration with the grooves 8c, 8b, 9b is confirmed by employing means for irradiating the main surface of the substrate 1 with a light to photodetect it from its opposite side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22504787A JPS6467976A (en) | 1987-09-08 | 1987-09-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22504787A JPS6467976A (en) | 1987-09-08 | 1987-09-08 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6467976A true JPS6467976A (en) | 1989-03-14 |
Family
ID=16823207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22504787A Pending JPS6467976A (en) | 1987-09-08 | 1987-09-08 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6467976A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0491434A (en) * | 1990-08-02 | 1992-03-24 | Nippondenso Co Ltd | Method and apparatus for etching |
| US7772098B2 (en) | 2007-03-29 | 2010-08-10 | Panasonic Corporation | Method for manufacturing semiconductor device |
-
1987
- 1987-09-08 JP JP22504787A patent/JPS6467976A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0491434A (en) * | 1990-08-02 | 1992-03-24 | Nippondenso Co Ltd | Method and apparatus for etching |
| US7772098B2 (en) | 2007-03-29 | 2010-08-10 | Panasonic Corporation | Method for manufacturing semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0236123A3 (en) | A semiconductor device and method for preparing the same | |
| GB1515639A (en) | Integrated circuits | |
| JPS6467976A (en) | Manufacture of semiconductor device | |
| JPS5694646A (en) | Forming method for oxidized film | |
| JPS56125844A (en) | Manufacture of semiconductor element | |
| JPS6442822A (en) | Processing of semiconductor substrate | |
| JPS57211775A (en) | Semiconductor device and manufacture thereof | |
| JPS5685857A (en) | Manufacture of semiconductor device | |
| JPS6457717A (en) | Manufacture of semiconductor device | |
| JPS57147286A (en) | Photodetector element and manufacture thereof | |
| JPS5325350A (en) | Dicing method of semiconductor substrates | |
| JPS5766650A (en) | Manufacture of semiconductor device | |
| JPS57100734A (en) | Etching method for semiconductor substrate | |
| JPS5694647A (en) | Forming method for oxidized film | |
| JPS5654066A (en) | Production of bevel type semiconductor | |
| JPS57106076A (en) | Manufacture of semiconductor integrated circuit device | |
| JPS55110057A (en) | Manufacture of semiconductor device | |
| JPS6482003A (en) | Formation of light guide device | |
| KR920020799A (en) | Manufacturing method of semiconductor laser diode | |
| EP0594248A3 (en) | Method of manufacturing a semiconductor device whereby a laterally bounded semiconductor zone is formed in a semiconductor body in a self-aligning manner | |
| JPS56104441A (en) | Directional dry etching method | |
| JPS6449242A (en) | Manufacture of semiconductor device | |
| JPS57113247A (en) | Manufacture of semiconductor device | |
| JPS5360184A (en) | Production of semiconductor wafer | |
| JPS5612774A (en) | Manufacturing method for semiconductor device |