JP2015032787A - 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2015032787A JP2015032787A JP2013163406A JP2013163406A JP2015032787A JP 2015032787 A JP2015032787 A JP 2015032787A JP 2013163406 A JP2013163406 A JP 2013163406A JP 2013163406 A JP2013163406 A JP 2013163406A JP 2015032787 A JP2015032787 A JP 2015032787A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- carbide semiconductor
- semiconductor substrate
- manufacturing
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 277
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 238
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 227
- 239000004065 semiconductor Substances 0.000 title claims abstract description 224
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 57
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims description 41
- 230000003746 surface roughness Effects 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 2
- 210000000746 body region Anatomy 0.000 description 16
- 238000005468 ion implantation Methods 0.000 description 15
- 238000002513 implantation Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 8
- 230000005856 abnormality Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 6
- 238000005336 cracking Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
- H01L21/047—Making n or p doped regions or layers, e.g. using diffusion using ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
Abstract
Description
以下、図面を参照して、本発明の実施の形態について説明する。なお、以下の図面において、同一または相当する部分には同一の参照番号を付し、その説明は繰り返さない。また、本明細書中の結晶学的記載においては、個別方位を[]、集合方位を<>、個別面を()、集合面を{}でそれぞれ示している。また結晶学上の指数が負であることは、通常、”−”(バー)を数字の上に付すことによって表現されるが、本明細書中では数字の前に負の符号を付している。
(1)図1を参照して、本実施の形態に係る炭化珪素半導体基板10は、外径が100mm以上である主面2Aを有し、単結晶炭化珪素からなるベース基板1と、主面2A上に形成されたエピタキシャル層2とを備え、基板温度が室温であるときの反り量は−100μm以上100μm以下であり、基板温度が400℃であるときの反り量は−1.5mm以上1.5mm以下である。ここで、図2および図3を参照して、炭化珪素半導体基板10の「反り量」とは、炭化珪素半導体基板10を平面S1に載置したときの、炭化珪素半導体基板10の主面2Aにおいて平面S1に対して最も高い位置と最も低い位置との間の高さの差である。ここで、反り量の正負は、図2を参照して、炭化珪素半導体基板10の主面2Aが下に凸の場合(炭化珪素半導体基板10の中心位置が外周位置よりも平面S1に対して低く位置する場合)をマイナスとし、図3を参照して、上方に凸の場合(炭化珪素半導体基板10の中心位置が外周位置よりも平面S1に対して高く位置する場合)をプラスとする。また、「基板温度」とは、炭化珪素半導体基板10の主面2A側から放射温度計により測定される温度であり、たとえばイオン注入装置などの半導体製造装置において測定される。なお、本実施の形態に係る炭化珪素半導体基板10は、外径が100mm以上の大口径基板であって、好ましくは外径が125mm以上であり、より好ましくは外径が150mm以上である。
次に、本発明の実施の形態の詳細について説明する。
図1を参照して、実施の形態1に係る炭化珪素半導体基板10について説明する。本実施の形態に係る炭化珪素半導体基板10は、ベース基板1と、ベース基板1の主面1A上に形成されたエピタキシャル層2とを備える。
Claims (9)
- 外径が100mm以上である主面を有し、単結晶炭化珪素からなるベース基板と、
前記主面上に形成されたエピタキシャル層とを備え、
基板温度が室温であるときの反り量は−100μm以上100μm以下であり、基板温度が400℃であるときの反り量は−1.5mm以上1.5mm以下である、炭化珪素半導体基板。 - 前記主面に垂直な方向における前記ベース基板の厚みが、200μm以上700μm以下である、請求項1に記載の炭化珪素半導体基板。
- 前記ベース基板において、前記主面の反対側に位置する裏面の表面粗度は10nm以下である、請求項1または請求項2に記載の炭化珪素半導体基板。
- 外径が100mm以上である主面を有し、単結晶炭化珪素からなるベース基板を準備する工程と、
前記主面上にエピタキシャル層を形成する工程と、
前記ベース基板において前記主面の反対側に位置する裏面の少なくとも一部を除去する工程とを備える、炭化珪素半導体基板の製造方法。 - 前記除去する工程は、前記裏面を化学機械研磨することにより行う、請求項4に記載の炭化珪素半導体基板の製造方法。
- 前記除去する工程は、前記裏面を反応性イオンエッチングすることにより行う、請求項4に記載の炭化珪素半導体基板の製造方法。
- 前記除去する工程は、前記裏面をハロゲンガス雰囲気下において熱エッチングすることにより行う、請求項4に記載の炭化珪素半導体基板の製造方法。
- 前記除去する工程は、前記裏面に熱酸化膜を形成した後、前記熱酸化膜をフッ化水素酸を用いてエッチングすることにより行う、請求項4に記載の炭化珪素半導体基板の製造方法。
- 外径が100mm以上である主面を有し、単結晶炭化珪素からなるベース基板を準備する工程と、
前記主面上にエピタキシャル層を形成する工程と、
前記ベース基板において前記主面の反対側に位置する裏面の少なくとも一部を除去して、炭化珪素半導体基板を準備する工程と、
前記炭化珪素半導体基板に不純物イオンを注入する工程とを備える、炭化珪素半導体装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013163406A JP6136731B2 (ja) | 2013-08-06 | 2013-08-06 | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 |
US14/910,182 US10050109B2 (en) | 2013-08-06 | 2014-06-13 | Silicon carbide semiconductor substrate, method for manufacturing silicon carbide semiconductor substrate, and method for manufacturing silicon carbide semiconductor device |
CN201480043442.2A CN105453220B (zh) | 2013-08-06 | 2014-06-13 | 碳化硅半导体衬底、制造碳化硅半导体衬底的方法、以及制造碳化硅半导体器件的方法 |
EP14834133.2A EP3035371A4 (en) | 2013-08-06 | 2014-06-13 | Silicon carbide semiconductor substrate, method for producing same, and method for producing silicon carbide semiconductor device |
CN201711098415.7A CN107833829B (zh) | 2013-08-06 | 2014-06-13 | 碳化硅半导体衬底 |
PCT/JP2014/065712 WO2015019707A1 (ja) | 2013-08-06 | 2014-06-13 | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013163406A JP6136731B2 (ja) | 2013-08-06 | 2013-08-06 | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017086028A Division JP2017183729A (ja) | 2017-04-25 | 2017-04-25 | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015032787A true JP2015032787A (ja) | 2015-02-16 |
JP6136731B2 JP6136731B2 (ja) | 2017-05-31 |
Family
ID=52461050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013163406A Active JP6136731B2 (ja) | 2013-08-06 | 2013-08-06 | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10050109B2 (ja) |
EP (1) | EP3035371A4 (ja) |
JP (1) | JP6136731B2 (ja) |
CN (2) | CN107833829B (ja) |
WO (1) | WO2015019707A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017075072A (ja) * | 2015-10-15 | 2017-04-20 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板 |
JP2020172434A (ja) * | 2015-10-15 | 2020-10-22 | 住友電気工業株式会社 | 炭化珪素単結晶基板および炭化珪素エピタキシャル基板の製造方法 |
US10879359B2 (en) | 2018-03-02 | 2020-12-29 | National Institute Of Advanced Industrial Science And Technology | Silicon carbide epitaxial wafer having a thick silicon carbide layer with small wrapage and manufacturing method thereof |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106537568B (zh) * | 2014-07-30 | 2019-07-12 | 三菱电机株式会社 | 半导体装置的制造方法及半导体装置 |
US10283595B2 (en) * | 2015-04-10 | 2019-05-07 | Panasonic Corporation | Silicon carbide semiconductor substrate used to form semiconductor epitaxial layer thereon |
US9978651B2 (en) * | 2015-05-11 | 2018-05-22 | Sumitomo Electric Industries, Ltd. | Silicon carbide single crystal substrate, silicon carbide semiconductor device, and method for manufacturing silicon carbide semiconductor device |
JP6758491B2 (ja) * | 2017-05-17 | 2020-09-23 | 三菱電機株式会社 | SiCエピタキシャルウエハおよびその製造方法 |
JP7002932B2 (ja) * | 2017-12-22 | 2022-01-20 | 昭和電工株式会社 | SiCインゴットの製造方法 |
CN114393512A (zh) * | 2022-01-30 | 2022-04-26 | 北京天科合达半导体股份有限公司 | 一种无损伤层碳化硅晶片表面快速加工的方法 |
JP7268784B1 (ja) * | 2022-05-31 | 2023-05-08 | 株式会社レゾナック | SiC基板及びSiCエピタキシャルウェハ |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007201155A (ja) * | 2006-01-26 | 2007-08-09 | Nissan Motor Co Ltd | 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法 |
WO2008120467A1 (ja) * | 2007-03-29 | 2008-10-09 | Panasonic Corporation | 半導体装置の製造方法 |
WO2012049792A1 (ja) * | 2010-10-15 | 2012-04-19 | 三菱電機株式会社 | 炭化珪素半導体素子の製造方法 |
JP2013118213A (ja) * | 2011-12-01 | 2013-06-13 | Showa Denko Kk | 炭化珪素半導体装置及びその製造方法 |
JP2013128050A (ja) * | 2011-12-19 | 2013-06-27 | Sumitomo Electric Ind Ltd | 半導体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5952679A (en) * | 1996-10-17 | 1999-09-14 | Denso Corporation | Semiconductor substrate and method for straightening warp of semiconductor substrate |
JP3920103B2 (ja) * | 2002-01-31 | 2007-05-30 | 大阪府 | 絶縁層埋め込み型半導体炭化シリコン基板の製造方法及びその製造装置 |
US7422634B2 (en) | 2005-04-07 | 2008-09-09 | Cree, Inc. | Three inch silicon carbide wafer with low warp, bow, and TTV |
US7405430B2 (en) * | 2005-06-10 | 2008-07-29 | Cree, Inc. | Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates |
WO2010119792A1 (ja) * | 2009-04-15 | 2010-10-21 | 住友電気工業株式会社 | 基板、薄膜付き基板、半導体装置、および半導体装置の製造方法 |
JP2011108809A (ja) * | 2009-11-17 | 2011-06-02 | Bridgestone Corp | 半導体素子の製造方法 |
JP4887418B2 (ja) * | 2009-12-14 | 2012-02-29 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造方法 |
GB2484506A (en) * | 2010-10-13 | 2012-04-18 | Univ Warwick | Heterogrowth |
CN102543718A (zh) * | 2010-12-14 | 2012-07-04 | 北京天科合达蓝光半导体有限公司 | 一种降低碳化硅晶片翘曲度、弯曲度的方法 |
US8872189B2 (en) * | 2011-08-05 | 2014-10-28 | Sumitomo Electric Industries, Ltd. | Substrate, semiconductor device, and method of manufacturing the same |
-
2013
- 2013-08-06 JP JP2013163406A patent/JP6136731B2/ja active Active
-
2014
- 2014-06-13 CN CN201711098415.7A patent/CN107833829B/zh active Active
- 2014-06-13 WO PCT/JP2014/065712 patent/WO2015019707A1/ja active Application Filing
- 2014-06-13 US US14/910,182 patent/US10050109B2/en active Active
- 2014-06-13 CN CN201480043442.2A patent/CN105453220B/zh active Active
- 2014-06-13 EP EP14834133.2A patent/EP3035371A4/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007201155A (ja) * | 2006-01-26 | 2007-08-09 | Nissan Motor Co Ltd | 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法 |
WO2008120467A1 (ja) * | 2007-03-29 | 2008-10-09 | Panasonic Corporation | 半導体装置の製造方法 |
WO2012049792A1 (ja) * | 2010-10-15 | 2012-04-19 | 三菱電機株式会社 | 炭化珪素半導体素子の製造方法 |
JP2013118213A (ja) * | 2011-12-01 | 2013-06-13 | Showa Denko Kk | 炭化珪素半導体装置及びその製造方法 |
JP2013128050A (ja) * | 2011-12-19 | 2013-06-27 | Sumitomo Electric Ind Ltd | 半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017075072A (ja) * | 2015-10-15 | 2017-04-20 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板 |
JP2020172434A (ja) * | 2015-10-15 | 2020-10-22 | 住友電気工業株式会社 | 炭化珪素単結晶基板および炭化珪素エピタキシャル基板の製造方法 |
US10879359B2 (en) | 2018-03-02 | 2020-12-29 | National Institute Of Advanced Industrial Science And Technology | Silicon carbide epitaxial wafer having a thick silicon carbide layer with small wrapage and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
JP6136731B2 (ja) | 2017-05-31 |
CN107833829A (zh) | 2018-03-23 |
CN105453220B (zh) | 2017-11-17 |
US20160181375A1 (en) | 2016-06-23 |
CN107833829B (zh) | 2022-02-18 |
WO2015019707A1 (ja) | 2015-02-12 |
EP3035371A1 (en) | 2016-06-22 |
US10050109B2 (en) | 2018-08-14 |
EP3035371A4 (en) | 2017-03-22 |
CN105453220A (zh) | 2016-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6136731B2 (ja) | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 | |
JP6197461B2 (ja) | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 | |
JP6136732B2 (ja) | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 | |
JP5803979B2 (ja) | 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法 | |
JP2013027960A (ja) | 炭化珪素基板の製造方法および炭化珪素基板 | |
KR20110120335A (ko) | 탄화규소 기판의 제조 방법 | |
JP2017050446A (ja) | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 | |
JP2017183729A (ja) | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 | |
TW201308622A (zh) | 半導體裝置之製造方法 | |
JP5884585B2 (ja) | 炭化珪素半導体装置の製造方法 | |
JP6340642B2 (ja) | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 | |
JP6107450B2 (ja) | 炭化珪素半導体装置の製造方法 | |
JP7036095B2 (ja) | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 | |
JP2012248572A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2013118247A (ja) | 炭化珪素半導体装置の製造方法 | |
JP2016028009A (ja) | 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160422 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161004 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161118 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170404 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170417 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6136731 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |