JP4609898B2 - 剥離洗浄液、それを用いた半導体基板洗浄方法、及び半導体基板上の配線形成方法 - Google Patents
剥離洗浄液、それを用いた半導体基板洗浄方法、及び半導体基板上の配線形成方法 Download PDFInfo
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- JP4609898B2 JP4609898B2 JP2006516850A JP2006516850A JP4609898B2 JP 4609898 B2 JP4609898 B2 JP 4609898B2 JP 2006516850 A JP2006516850 A JP 2006516850A JP 2006516850 A JP2006516850 A JP 2006516850A JP 4609898 B2 JP4609898 B2 JP 4609898B2
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- Prior art keywords
- water
- etching space
- cleaning liquid
- semiconductor substrate
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004140 cleaning Methods 0.000 title claims abstract description 61
- 239000000758 substrate Substances 0.000 title claims abstract description 60
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims description 71
- 239000007788 liquid Substances 0.000 title claims description 37
- 230000015572 biosynthetic process Effects 0.000 title claims description 20
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 88
- 239000000463 material Substances 0.000 claims abstract description 75
- 239000003960 organic solvent Substances 0.000 claims abstract description 39
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 22
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 238000011049 filling Methods 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 17
- 125000004432 carbon atom Chemical group C* 0.000 claims description 14
- 238000001459 lithography Methods 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 8
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 7
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 5
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 5
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 3
- QVOFCQBZXGLNAA-UHFFFAOYSA-M tributyl(methyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(CCCC)CCCC QVOFCQBZXGLNAA-UHFFFAOYSA-M 0.000 claims description 3
- KTDMLSMSWDJKGA-UHFFFAOYSA-M methyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](C)(CCC)CCC KTDMLSMSWDJKGA-UHFFFAOYSA-M 0.000 claims description 2
- 238000004299 exfoliation Methods 0.000 claims 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical group C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims 1
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- 125000004183 alkoxy alkyl group Chemical group 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 description 3
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 3
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- ADVLMMRRMDSTHU-UHFFFAOYSA-N 1,2-dihydroxyanthracene-9-carboxylic acid Chemical compound C1=C(O)C(O)=C2C(C(=O)O)=C(C=CC=C3)C3=CC2=C1 ADVLMMRRMDSTHU-UHFFFAOYSA-N 0.000 description 2
- LNETULKMXZVUST-UHFFFAOYSA-N 1-naphthoic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1 LNETULKMXZVUST-UHFFFAOYSA-N 0.000 description 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- ZBJLUVHQIPUCPM-UHFFFAOYSA-N 1-phenylbenzotriazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=N1 ZBJLUVHQIPUCPM-UHFFFAOYSA-N 0.000 description 2
- HHYPDQBCLQZKLI-UHFFFAOYSA-N 2-[2-hydroxyethyl-[(5-methylbenzotriazol-1-yl)methyl]amino]ethanol Chemical compound CC1=CC=C2N(CN(CCO)CCO)N=NC2=C1 HHYPDQBCLQZKLI-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- WVIXTJQLKOLKTQ-UHFFFAOYSA-N 3-(benzotriazol-1-yl)propane-1,2-diol Chemical compound C1=CC=C2N(CC(O)CO)N=NC2=C1 WVIXTJQLKOLKTQ-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- JVYLRDJQLUXKSK-UHFFFAOYSA-N butyl-ethoxy-propoxysilane Chemical compound CCCC[SiH](OCC)OCCC JVYLRDJQLUXKSK-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- ZXPDYFSTVHQQOI-UHFFFAOYSA-N diethoxysilane Chemical compound CCO[SiH2]OCC ZXPDYFSTVHQQOI-UHFFFAOYSA-N 0.000 description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 2
- JVUVKQDVTIIMOD-UHFFFAOYSA-N dimethoxy(dipropyl)silane Chemical compound CCC[Si](OC)(OC)CCC JVUVKQDVTIIMOD-UHFFFAOYSA-N 0.000 description 2
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 2
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- 239000002994 raw material Substances 0.000 description 2
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- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 description 1
- 229940043276 diisopropanolamine Drugs 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- RXBGEIGGCCSMHC-UHFFFAOYSA-N dimethoxy(propoxy)silane Chemical compound CCCO[SiH](OC)OC RXBGEIGGCCSMHC-UHFFFAOYSA-N 0.000 description 1
- SGKDAFJDYSMACD-UHFFFAOYSA-N dimethoxy(propyl)silane Chemical compound CCC[SiH](OC)OC SGKDAFJDYSMACD-UHFFFAOYSA-N 0.000 description 1
- XKRPWHZLROBLDI-UHFFFAOYSA-N dimethoxy-methyl-propylsilane Chemical compound CCC[Si](C)(OC)OC XKRPWHZLROBLDI-UHFFFAOYSA-N 0.000 description 1
- HOXUFWMHAIJENN-UHFFFAOYSA-N dimethyl dipropyl silicate Chemical compound CCCO[Si](OC)(OC)OCCC HOXUFWMHAIJENN-UHFFFAOYSA-N 0.000 description 1
- SWLVAJXQIOKFSJ-UHFFFAOYSA-N dimethyl(diphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](C)(C)OC1=CC=CC=C1 SWLVAJXQIOKFSJ-UHFFFAOYSA-N 0.000 description 1
- ZIDTUTFKRRXWTK-UHFFFAOYSA-N dimethyl(dipropoxy)silane Chemical compound CCCO[Si](C)(C)OCCC ZIDTUTFKRRXWTK-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- JFCVQVCWZYWWPV-UHFFFAOYSA-N diphenoxy(dipropyl)silane Chemical compound C=1C=CC=CC=1O[Si](CCC)(CCC)OC1=CC=CC=C1 JFCVQVCWZYWWPV-UHFFFAOYSA-N 0.000 description 1
- FODRZLHRNBNMCO-UHFFFAOYSA-N diphenoxy(propoxy)silane Chemical compound CCCO[SiH](Oc1ccccc1)Oc1ccccc1 FODRZLHRNBNMCO-UHFFFAOYSA-N 0.000 description 1
- XNAZVASFWJAZNT-UHFFFAOYSA-N diphenoxy(propyl)silane Chemical compound CCC[SiH](Oc1ccccc1)Oc1ccccc1 XNAZVASFWJAZNT-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- SACPKRUZWRIEBW-UHFFFAOYSA-N dipropoxysilane Chemical compound CCCO[SiH2]OCCC SACPKRUZWRIEBW-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- CEZDZFIYWRNIOW-UHFFFAOYSA-N ethoxy(diphenoxy)silane Chemical compound CCO[SiH](Oc1ccccc1)Oc1ccccc1 CEZDZFIYWRNIOW-UHFFFAOYSA-N 0.000 description 1
- OMUZVOVPUNRELL-UHFFFAOYSA-N ethoxy(phenoxy)silane Chemical compound CCO[SiH2]Oc1ccccc1 OMUZVOVPUNRELL-UHFFFAOYSA-N 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- LWVQRZRMDDXSQO-UHFFFAOYSA-N ethyl methyl dipropyl silicate Chemical compound CCCO[Si](OC)(OCC)OCCC LWVQRZRMDDXSQO-UHFFFAOYSA-N 0.000 description 1
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- XBQKHZAEBLQEHX-UHFFFAOYSA-N ethyl(diphenoxy)silane Chemical compound CC[SiH](Oc1ccccc1)Oc1ccccc1 XBQKHZAEBLQEHX-UHFFFAOYSA-N 0.000 description 1
- BNFBSHKADAKNSK-UHFFFAOYSA-N ethyl(dipropoxy)silane Chemical compound CCCO[SiH](CC)OCCC BNFBSHKADAKNSK-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- KUCGHDUQOVVQED-UHFFFAOYSA-N ethyl(tripropoxy)silane Chemical compound CCCO[Si](CC)(OCCC)OCCC KUCGHDUQOVVQED-UHFFFAOYSA-N 0.000 description 1
- BKPOHJLJSNVXOQ-UHFFFAOYSA-N ethyl-(2-methoxyethoxy)-propylsilane Chemical compound C(C)[SiH](OCCOC)CCC BKPOHJLJSNVXOQ-UHFFFAOYSA-N 0.000 description 1
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- HIPNKAPHGKUQDM-UHFFFAOYSA-N ethyl-methoxy-dipropoxysilane Chemical compound CCCO[Si](CC)(OC)OCCC HIPNKAPHGKUQDM-UHFFFAOYSA-N 0.000 description 1
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- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 1
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- QBCNIGWTXULERZ-UHFFFAOYSA-N methoxy(dipropoxy)silane Chemical compound CCCO[SiH](OC)OCCC QBCNIGWTXULERZ-UHFFFAOYSA-N 0.000 description 1
- JTOARSATYYFDSP-UHFFFAOYSA-N methoxy-diphenoxy-propylsilane Chemical compound C=1C=CC=CC=1O[Si](OC)(CCC)OC1=CC=CC=C1 JTOARSATYYFDSP-UHFFFAOYSA-N 0.000 description 1
- NPKCRFQGOQDCPM-UHFFFAOYSA-N methoxy-dipropoxy-propylsilane Chemical compound CCCO[Si](CCC)(OC)OCCC NPKCRFQGOQDCPM-UHFFFAOYSA-N 0.000 description 1
- IKESVYSZFPIZDP-UHFFFAOYSA-N methoxy-methyl-diphenoxysilane Chemical compound C=1C=CC=CC=1O[Si](C)(OC)OC1=CC=CC=C1 IKESVYSZFPIZDP-UHFFFAOYSA-N 0.000 description 1
- JRUSMKPBJTYUCR-UHFFFAOYSA-N methoxy-methyl-dipropoxysilane Chemical compound CCCO[Si](C)(OC)OCCC JRUSMKPBJTYUCR-UHFFFAOYSA-N 0.000 description 1
- NJISVYSHLYACRT-UHFFFAOYSA-N methoxy-methyl-phenoxysilane Chemical compound CO[SiH](C)Oc1ccccc1 NJISVYSHLYACRT-UHFFFAOYSA-N 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- DLEZVOPJBSAAGW-UHFFFAOYSA-N methyl benzotriazole-1-carboxylate Chemical compound C1=CC=C2N(C(=O)OC)N=NC2=C1 DLEZVOPJBSAAGW-UHFFFAOYSA-N 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- WUHFHHFIAKZOGV-UHFFFAOYSA-N methyl triphenyl silicate Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(OC)OC1=CC=CC=C1 WUHFHHFIAKZOGV-UHFFFAOYSA-N 0.000 description 1
- RJMRIDVWCWSWFR-UHFFFAOYSA-N methyl(tripropoxy)silane Chemical compound CCCO[Si](C)(OCCC)OCCC RJMRIDVWCWSWFR-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- XVHLHUNZWRKZPF-UHFFFAOYSA-N n-[(4-methylbenzotriazol-1-yl)methyl]-n-propan-2-ylpropan-2-amine Chemical compound C1=CC=C2N(CN(C(C)C)C(C)C)N=NC2=C1C XVHLHUNZWRKZPF-UHFFFAOYSA-N 0.000 description 1
- RUFMRRIYNIOMBR-UHFFFAOYSA-N n-ethyl-n-[(4-methylbenzotriazol-1-yl)methyl]ethanamine Chemical compound C1=CC=C2N(CN(CC)CC)N=NC2=C1C RUFMRRIYNIOMBR-UHFFFAOYSA-N 0.000 description 1
- XOOMNEFVDUTJPP-UHFFFAOYSA-N naphthalene-1,3-diol Chemical compound C1=CC=CC2=CC(O)=CC(O)=C21 XOOMNEFVDUTJPP-UHFFFAOYSA-N 0.000 description 1
- KHARCSTZAGNHOT-UHFFFAOYSA-N naphthalene-2,3-dicarboxylic acid Chemical compound C1=CC=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 KHARCSTZAGNHOT-UHFFFAOYSA-N 0.000 description 1
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
- WPUMVKJOWWJPRK-UHFFFAOYSA-N naphthalene-2,7-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=CC2=CC(C(=O)O)=CC=C21 WPUMVKJOWWJPRK-UHFFFAOYSA-N 0.000 description 1
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 1
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- 235000019260 propionic acid Nutrition 0.000 description 1
- ZMYXZXUHYAGGKG-UHFFFAOYSA-N propoxysilane Chemical compound CCCO[SiH3] ZMYXZXUHYAGGKG-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229960004063 propylene glycol Drugs 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 125000004963 sulfonylalkyl group Chemical group 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- ADLSSRLDGACTEX-UHFFFAOYSA-N tetraphenyl silicate Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC1=CC=CC=C1 ADLSSRLDGACTEX-UHFFFAOYSA-N 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- 229940035024 thioglycerol Drugs 0.000 description 1
- TXXHDPDFNKHHGW-ZPUQHVIOSA-N trans,trans-muconic acid Chemical compound OC(=O)\C=C\C=C\C(O)=O TXXHDPDFNKHHGW-ZPUQHVIOSA-N 0.000 description 1
- HSDAZXVGQVMFAY-UHFFFAOYSA-N tributyl methyl silicate Chemical compound CCCCO[Si](OC)(OCCCC)OCCCC HSDAZXVGQVMFAY-UHFFFAOYSA-N 0.000 description 1
- PZOOLKGCOFWELU-UHFFFAOYSA-N tributyl propyl silicate Chemical compound CCCCO[Si](OCCC)(OCCCC)OCCCC PZOOLKGCOFWELU-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- QYBKVVRRGQSGDC-UHFFFAOYSA-N triethyl methyl silicate Chemical compound CCO[Si](OC)(OCC)OCC QYBKVVRRGQSGDC-UHFFFAOYSA-N 0.000 description 1
- CXZMPNCYSOLUEK-UHFFFAOYSA-N triethyl propyl silicate Chemical compound CCCO[Si](OCC)(OCC)OCC CXZMPNCYSOLUEK-UHFFFAOYSA-N 0.000 description 1
- ZMANZCXQSJIPKH-UHFFFAOYSA-O triethylammonium ion Chemical compound CC[NH+](CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-O 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- AMUIJRKZTXWCEA-UHFFFAOYSA-N triphenoxy(propyl)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(CCC)OC1=CC=CC=C1 AMUIJRKZTXWCEA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/267—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- C—CHEMISTRY; METALLURGY
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Description
(a−1)第4級アンモニウム水酸化物
第4級アンモニウム水酸化物を配合することにより、配線パターンに用いたレジスト膜、特に基板エッチング時に生成するエッチドレジストの剥離性が向上する。
[NR1R2R3R4]+OH-・・・・・・・・・・(1)
水溶性有機溶剤は、慣用される化合物を用いることができる。水溶性有機溶剤は、アルカノールアミン系水溶性有機溶剤とそれ以外の水溶性有機溶剤に大別され、適宜選択して用いることができる。
水は、剥離洗浄液全量に対し、好ましくは10〜80質量%、特に好ましくは15〜70質量%配合される。この範囲を逸脱した場合、例えば下限(10質量%)よりも少なければ残渣物の除去性が悪くなりやすく、逆に上限(80質量%)よりも過剰に加えた場合は、基板に残るCu等の各種金属が腐食されやすくなる。
KOHの配合量は、剥離洗浄液全量に対し、好ましくは1質量%以下、より好ましくは0.001〜0.3質量%である。特に0.01〜0.1質量%で配合されることが好ましい。KOHの微量添加により、ダマシン法で用いられる埋め込み材のエッチングレートを高めることができ、基板構成材質であるLow−k材とのエッチングレートにおける選択比を高めることができる。すなわち、KOHの添加により、Low−k材にダメージを与えることなく、迅速に埋め込み材を除去することが可能となる。一方、上限よりも過剰に加えた場合は基板構成層が腐食されやすい。
防食剤としては、ベンゾトリアゾール系化合物、及びメルカプト基含有化合物の中から選ばれる少なくとも1種が用いられる。上記ベンゾトリアゾール系化合物としては、下記一般式(2)で表されるベンゾトリアゾール系化合物が挙げられる。
本発明の半導体基板洗浄方法は、基板上に一時的に積層した一時的積層膜を用いて金属配線形成するに至る工程中の半導体基板に、前記剥離洗浄液を接触させ、前記基板上の一時的積層膜であるレジスト膜、埋め込み材、および前記金属配線形成後の金属残渣物のうち、少なくとも1つを除去する半導体基板洗浄方法であり、上記剥離洗浄液が少なくとも4級アンモニウム水酸化物と、水溶性有機溶剤と、水と、防食剤と、全量に対し1質量%以下の水酸化カリウムとを含む。
本発明の配線形成方法は、リソグラフィー技術による一時的積層膜を用いて基板上の誘電体層に形成したエッチング空間に、金属を埋め込むことによって、金属配線層を形成するに至るプロセスにおける所定の時期に、前記基板上の前記一時的積層膜であるレジスト膜、埋め込み材、および前記金属配線層形成後の金属残渣物のうち、少なくとも1つを剥離洗浄液を用いて除去する配線形成方法であり、上記剥離洗浄液が少なくとも4級アンモニウム水酸化物と、水溶性有機溶剤と、水と、防食剤と、全量に対し1質量%以下の水酸化カリウムとを含む。
(式中、R1,R2,R3,およびR4は、それぞれ独立に炭素数1〜4のアルキル基またはフェニル基、a,b,c,およびdは、0≦a≦4,0≦b≦4,0≦c≦4、0≦d≦4であって、かつa+b+c+d=4の条件を満たす整数である。)で表される化合物、
(式中、R5は水素原子あるいは炭素数1〜4のアルキル基、R6,R7,およびR8は、それぞれ炭素数1〜3のアルキル基またはフェニル基、e,f,およびgは、0≦e≦3,0≦f≦3,0≦g≦3であって、かつe+f+g=3の条件を満たす整数である。)で表される化合物、および
(式中、R9およびR10は水素原子あるいは炭素数1〜4のアルキル基、R11およびR12は、それぞれ炭素数1〜3のアルキル基またはフェニル基、hおよびiは、0≦h≦2,0≦i≦2であって、かつh+i=2の条件を満たす整数である。)で表される化合物から選ばれる少なくとも1種の化合物を水の存在下で酸の作用により加水分解させたものである。
表1に示す組成および配合量に基づき、剥離洗浄液を調製した。防食剤は、チオグリセロールとベンゾトリアゾール系防食剤であるIRGAMET42(商品名、チバスペシャリティーケミカルズ社製)を3:2で混合したものを、全ての実施例および比較例に、全量に対して2.5質量%加えた。
Cu層を形成した基板上に、第1層としてバリア層を、第2層として低誘電体層(誘電体層は、2.9〜3.2の誘電値でCVD蒸着した)を形成し、この上にリソグラフィー法により形成したホトレジストパターンをマスクとして、低誘電体層を通してエッチングしバリア層に連通するビアホールを形成した。
実施例と同様にして、表2に示すエッチドレジスト剥離性、Si系金属残渣物剥離性、埋め込み材剥離性、Low−k材に対する腐食抑止効果、Cuに対する腐食抑止効果の結果を得た。
Claims (12)
- 4級アンモニウム水酸化物と、水溶性有機溶剤と、水と、防食剤と、全量に対し0.01質量%以上0.1質量%以下の水酸化カリウムとを含む剥離洗浄液。
- 前記4級アンモニウム水酸化物が、下記一般式(1)
[NR1R2R3R4]+OH−・・・・・・・・・・(1)
(一般式(1)中、R1〜R4が、炭素原子数1〜4のアルキル基またはヒドロキシアルキル基である。)で表される化合物である請求項1に記載の剥離洗浄液。 - 前記4級アンモニウム水酸化物は、テトラメチルアンモニウム水酸化物、テトラエチルアンモニウム水酸化物、テトラプロピルアンモニウム水酸化物、テトラブチルアンモニウム水酸化物、メチルトリプロピルアンモニウム水酸化物、メチルトリブチルアンモニウム水酸化物からなる群より選ばれる少なくとも1種である請求項1に記載の剥離洗浄液。
- 基板上に一時的に積層した一時的積層膜を用いて金属配線形成するに至る工程中の半導体基板に剥離洗浄液を接触させ、前記基板上の一時的積層膜であるレジスト膜、埋め込み材、および前記金属配線形成後の金属残渣物のうち、少なくとも1つを除去する半導体基板洗浄方法であり、
前記剥離洗浄液が、4級アンモニウム水酸化物と、水溶性有機溶剤と、水と、防食剤と、全量に対し0.01質量%以上0.1質量%以下の水酸化カリウムとを含む半導体基板洗浄方法。 - 前記半導体基板が、誘電率kが3.2以下の低誘電体層を少なくとも備えた基板であることを特徴とする請求項4に記載の半導体基板洗浄方法。
- リソグラフィー技術による一時的積層膜を用いて基板上の誘電体層に形成したエッチング空間に、金属を埋め込むことによって、金属配線層を形成するに至るプロセスにおける所定の時期に、前記基板上の前記一時的積層膜であるレジスト膜、埋め込み材、および前記金属配線層形成後の金属残渣物のうち、少なくとも1つを剥離洗浄液を用いて除去する配線形成方法であり、
前記剥離洗浄液が4級アンモニウム水酸化物と、水溶性有機溶剤と、水と、防食剤と、全量に対し0.01質量%以上0.1質量%以下の水酸化カリウムとを含む配線形成方法。 - 前記所定の時期が、前記エッチング空間形成後である請求項6に記載の配線形成方法。
- 前記誘電体層が、第一の誘電体層と第二の誘電体層とからなり、前記エッチング空間が前記第一の誘電体層に形成される第一のエッチング空間と前記第二の誘電体層に前記第一のエッチング空間に連通するように形成される第二のエッチング空間とからなり、前記第二のエッチング空間形成前に前記第一のエッチング空間を埋め込み材により一時的に充填しておく請求項6に記載の配線形成方法。
- 前記第二のエッチング空間形成後に行なわれる前記第一のエッチング空間からの前記埋め込み材の除去が前記剥離洗浄液により行なわれる請求項8に記載の配線形成方法。
- 前記第一のエッチング空間がトレンチであり、第二のエッチング空間がビアホールである請求項8に記載の配線形成方法。
- 前記第一のエッチング空間がビアホールであり、第二のエッチング空間がトレンチである請求項8に記載の配線形成方法。
- 前記誘電体層が、誘電率kが3.2以下の低誘電体層である請求項6に記載の配線形成方法。
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JP3738996B2 (ja) * | 2002-10-10 | 2006-01-25 | 東京応化工業株式会社 | ホトリソグラフィー用洗浄液および基板の処理方法 |
JP2002357908A (ja) | 2001-05-31 | 2002-12-13 | Tokyo Ohka Kogyo Co Ltd | ホトレジスト用剥離液 |
JP4945857B2 (ja) * | 2001-06-13 | 2012-06-06 | Jsr株式会社 | 研磨パッド洗浄用組成物及び研磨パッド洗浄方法 |
MY131912A (en) | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
JP3799026B2 (ja) * | 2002-03-29 | 2006-07-19 | 三洋化成工業株式会社 | アルカリ洗浄剤 |
-
2004
- 2004-06-10 US US10/864,394 patent/US7442675B2/en active Active
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TWI275642B (en) | 2007-03-11 |
JP2006527783A (ja) | 2006-12-07 |
ATE488569T1 (de) | 2010-12-15 |
KR20060086844A (ko) | 2006-08-01 |
EP1641908A1 (en) | 2006-04-05 |
EP1641908B1 (en) | 2010-11-17 |
CN1849386A (zh) | 2006-10-18 |
WO2004113486A1 (en) | 2004-12-29 |
US20040259761A1 (en) | 2004-12-23 |
KR100748903B1 (ko) | 2007-08-13 |
CN1849386B (zh) | 2010-07-28 |
US7442675B2 (en) | 2008-10-28 |
DE602004030121D1 (de) | 2010-12-30 |
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