KR101154836B1 - 레지스트 박리제 조성물 - Google Patents

레지스트 박리제 조성물 Download PDF

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Publication number
KR101154836B1
KR101154836B1 KR1020050025611A KR20050025611A KR101154836B1 KR 101154836 B1 KR101154836 B1 KR 101154836B1 KR 1020050025611 A KR1020050025611 A KR 1020050025611A KR 20050025611 A KR20050025611 A KR 20050025611A KR 101154836 B1 KR101154836 B1 KR 101154836B1
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KR
South Korea
Prior art keywords
acid
resist
copper
release agent
film
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Expired - Fee Related
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KR1020050025611A
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English (en)
Korean (ko)
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KR20060044864A (ko
Inventor
마사유키 다카시마
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동우 화인켐 주식회사
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020050025611A 2004-03-31 2005-03-28 레지스트 박리제 조성물 Expired - Fee Related KR101154836B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00104341 2004-03-31
JP2004104341A JP4440689B2 (ja) 2004-03-31 2004-03-31 レジスト剥離剤組成物

Publications (2)

Publication Number Publication Date
KR20060044864A KR20060044864A (ko) 2006-05-16
KR101154836B1 true KR101154836B1 (ko) 2012-06-18

Family

ID=35049827

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050025611A Expired - Fee Related KR101154836B1 (ko) 2004-03-31 2005-03-28 레지스트 박리제 조성물

Country Status (5)

Country Link
US (1) US20050287480A1 (enExample)
JP (1) JP4440689B2 (enExample)
KR (1) KR101154836B1 (enExample)
CN (1) CN100559287C (enExample)
TW (1) TWI275915B (enExample)

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KR101056544B1 (ko) * 2003-08-19 2011-08-11 아반토르 퍼포먼스 머티리얼스, 인크. 마이크로전자 기판용 박리 및 세정 조성물
JP4326928B2 (ja) * 2003-12-09 2009-09-09 株式会社東芝 フォトレジスト残渣除去液組成物及び該組成物を用いる半導体回路素子の製造方法
JP2006016438A (ja) * 2004-06-30 2006-01-19 Dongwoo Fine-Chem Co Ltd 電子部品洗浄液
KR101232249B1 (ko) * 2004-08-10 2013-02-12 간또 가가꾸 가부시끼가이샤 반도체 기판 세정액 및 반도체 기판 세정방법
EP1628336B1 (en) * 2004-08-18 2012-01-04 Mitsubishi Gas Chemical Company, Inc. Cleaning liquid and cleaning method
TWI393178B (zh) * 2005-01-27 2013-04-11 Advanced Tech Materials 半導體基板處理用之組成物
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
KR100675284B1 (ko) * 2005-02-01 2007-01-26 삼성전자주식회사 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법
US7718590B2 (en) * 2005-02-25 2010-05-18 Ekc Technology, Inc. Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material
US20070251551A1 (en) * 2005-04-15 2007-11-01 Korzenski Michael B Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems
CN101366107B (zh) 2005-10-05 2011-08-24 高级技术材料公司 用于除去蚀刻后残余物的含水氧化清洗剂
JP5251128B2 (ja) * 2005-12-01 2013-07-31 三菱瓦斯化学株式会社 半導体素子又は表示素子用洗浄液および洗浄方法
JP5292811B2 (ja) * 2005-12-20 2013-09-18 三菱瓦斯化学株式会社 配線基板の残渣除去用組成物および洗浄方法
TWI417683B (zh) * 2006-02-15 2013-12-01 Avantor Performance Mat Inc 用於微電子基板之穩定化，非水性清潔組合物
WO2008023754A1 (fr) * 2006-08-24 2008-02-28 Daikin Industries, Ltd. Solution pour éliminer un résidu après un procédé de traitement par voie sèche de semi-conducteur et procédé d'élimination de résidu utilisant celle-ci
JP5159066B2 (ja) * 2006-08-24 2013-03-06 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
JP5017985B2 (ja) * 2006-09-25 2012-09-05 東ソー株式会社 レジスト除去用組成物及びレジストの除去方法
KR101341754B1 (ko) * 2006-11-13 2013-12-16 동우 화인켐 주식회사 레지스트 및 건식 식각 잔사 제거용 조성물 및 이를 이용한레지스트 및 건식 식각 잔사의 제거 방법
US20080149884A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
US20100081595A1 (en) * 2007-01-22 2010-04-01 Freescale Semiconductor, Inc Liquid cleaning composition and method for cleaning semiconductor devices
KR101341707B1 (ko) 2007-06-28 2013-12-16 동우 화인켐 주식회사 포토레지스트 박리액 조성물 및 이를 이용한 박리방법
KR101488265B1 (ko) * 2007-09-28 2015-02-02 삼성디스플레이 주식회사 박리 조성물 및 박리 방법
KR100919596B1 (ko) * 2008-02-21 2009-09-29 (주) 휴브글로벌 에칭 첨가제 및 이를 함유하는 에칭용 조성물
TWI460557B (zh) * 2008-03-07 2014-11-11 Wako Pure Chem Ind Ltd 半導體表面用處理劑組成物及使用半導體表面用處理劑組成物之半導體表面處理方法
CN101555029B (zh) * 2008-04-09 2011-05-04 清华大学 铝酸锌纳米材料的制备方法
CN101685274B (zh) * 2008-09-26 2012-08-22 安集微电子（上海）有限公司 一种用于厚膜光刻胶的清洗剂
WO2011027772A1 (ja) * 2009-09-02 2011-03-10 和光純薬工業株式会社 半導体表面用処理剤組成物及びそれを用いた半導体表面の処理方法
JP5646882B2 (ja) 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
JP5498768B2 (ja) * 2009-12-02 2014-05-21 東京応化工業株式会社 リソグラフィー用洗浄液及び配線形成方法
TWI444788B (zh) * 2010-01-28 2014-07-11 Everlight Chem Ind Corp 顯影液之組成物
JP5404459B2 (ja) * 2010-02-08 2014-01-29 東京応化工業株式会社 リソグラフィー用洗浄液及び配線形成方法
US20110253171A1 (en) * 2010-04-15 2011-10-20 John Moore Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication
JP5508130B2 (ja) * 2010-05-14 2014-05-28 富士フイルム株式会社 洗浄組成物、半導体装置の製造方法及び洗浄方法
JP5508158B2 (ja) * 2010-06-22 2014-05-28 富士フイルム株式会社 洗浄組成物、洗浄方法、及び、半導体装置の製造方法
JP5801594B2 (ja) * 2011-04-18 2015-10-28 富士フイルム株式会社 洗浄組成物、これを用いた洗浄方法及び半導体素子の製造方法
TWI424090B (zh) * 2011-05-06 2014-01-21 Univ Far East 回收鍍錫銅線之方法
KR101857807B1 (ko) * 2011-08-22 2018-06-19 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
CN103764874B (zh) * 2011-08-31 2016-07-27 东友精细化工有限公司 用于包括铜和钛的金属层的蚀刻液组合物
CN102436153B (zh) * 2011-10-28 2013-06-19 绍兴文理学院 印花网版感光胶剥离剂
CN102880017B (zh) * 2012-09-28 2014-07-23 京东方科技集团股份有限公司 光刻胶用剥离液组合物及其制备和应用
US9957469B2 (en) 2014-07-14 2018-05-01 Versum Materials Us, Llc Copper corrosion inhibition system
KR102242951B1 (ko) * 2014-08-12 2021-04-22 주식회사 이엔에프테크놀로지 실리콘 산화막 에칭액
JP6555273B2 (ja) * 2014-11-13 2019-08-07 三菱瓦斯化学株式会社 タングステンを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法
TWI690780B (zh) 2014-12-30 2020-04-11 美商富士軟片電子材料美國股份有限公司 用於自半導體基板去除光阻之剝離組成物
JP6217659B2 (ja) * 2015-01-28 2017-10-25 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
CN105388713A (zh) * 2015-12-16 2016-03-09 无锡吉进环保科技有限公司 一种薄膜液晶显示器中的铝膜水系光阻剥离液
KR102675757B1 (ko) * 2017-02-24 2024-06-18 동우 화인켐 주식회사 레지스트 박리액 조성물
JP7541014B2 (ja) * 2019-09-18 2024-08-27 富士フイルム株式会社 洗浄液、洗浄方法
IL301206A (en) * 2020-09-11 2023-05-01 Fujifilm Electronic Mat Usa Inc Etching compositions
KR20220058069A (ko) * 2020-10-30 2022-05-09 주식회사 이엔에프테크놀로지 세정제 조성물 및 이를 이용한 세정방법
CN113740141B (zh) * 2021-08-25 2024-07-12 有研亿金新材料有限公司 一种用于超细镍钛记忆合金丝材的金相显影液及制备方法
CN116083177B (zh) * 2023-01-31 2025-01-21 福建省佑达环保材料有限公司 一种用于半导体制程的水基去胶液

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JP2001242641A (ja) 2000-02-29 2001-09-07 Kanto Chem Co Inc フォトレジスト剥離液組成物およびそれを用いた半導体基板処理方法
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Also Published As

Publication number Publication date
JP2005292288A (ja) 2005-10-20
TWI275915B (en) 2007-03-11
JP4440689B2 (ja) 2010-03-24
KR20060044864A (ko) 2006-05-16
US20050287480A1 (en) 2005-12-29
CN100559287C (zh) 2009-11-11
CN1677248A (zh) 2005-10-05
TW200634449A (en) 2006-10-01

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R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000