JP2006350325A5 - - Google Patents
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- Publication number
- JP2006350325A5 JP2006350325A5 JP2006142882A JP2006142882A JP2006350325A5 JP 2006350325 A5 JP2006350325 A5 JP 2006350325A5 JP 2006142882 A JP2006142882 A JP 2006142882A JP 2006142882 A JP2006142882 A JP 2006142882A JP 2006350325 A5 JP2006350325 A5 JP 2006350325A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing
- film
- photoresist pattern
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 8
- 229920002120 photoresistant polymer Polymers 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 5
- 239000000203 mixture Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 4
- 239000000654 additive Substances 0.000 claims 3
- 230000000996 additive effect Effects 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 125000005210 alkyl ammonium group Chemical group 0.000 claims 2
- 238000005260 corrosion Methods 0.000 claims 2
- 230000007797 corrosion Effects 0.000 claims 2
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims 2
- 239000003112 inhibitor Substances 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims 1
- -1 alcohol amide compound Chemical class 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000003880 polar aprotic solvent Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050051421A KR100705416B1 (ko) | 2005-06-15 | 2005-06-15 | 포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법 |
| KR10-2005-0051421 | 2005-06-15 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006350325A JP2006350325A (ja) | 2006-12-28 |
| JP2006350325A5 true JP2006350325A5 (enExample) | 2009-07-02 |
| JP4880361B2 JP4880361B2 (ja) | 2012-02-22 |
Family
ID=37574163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006142882A Expired - Fee Related JP4880361B2 (ja) | 2005-06-15 | 2006-05-23 | フォトレジスト除去用組成物、フォトレジスト除去用組成物の製造方法、フォトレジスト除去用組成物を用いたフォトレジストの除去方法、及び半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7608540B2 (enExample) |
| JP (1) | JP4880361B2 (enExample) |
| KR (1) | KR100705416B1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008152907A1 (ja) * | 2007-06-12 | 2008-12-18 | Toagosei Co., Ltd. | 導電性高分子上のレジスト膜の剥離剤、レジスト膜の剥離方法、および、パターニングした導電性高分子を有する基板 |
| CN201219685Y (zh) * | 2008-04-16 | 2009-04-15 | 韩广民 | 组装结构产品及庭院椅 |
| CN102177230B (zh) | 2008-10-09 | 2014-02-19 | 安万托特性材料股份有限公司 | 用于去除铜的氧化物蚀刻残余物和防止铜电沉积的含水酸性制剂 |
| EP2395397A4 (en) * | 2009-02-03 | 2012-10-03 | Idemitsu Kosan Co | PAINT REMOVAL COMPOSITION AND PAINT REMOVAL PROCESS USING THEREOF |
| JP6283477B2 (ja) | 2012-06-25 | 2018-02-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | アミド成分を含むフォトレジスト |
| JP6231423B2 (ja) * | 2014-04-09 | 2017-11-15 | 東京応化工業株式会社 | フォトリソグラフィ用剥離液及びパターン形成方法 |
| WO2016028454A1 (en) | 2014-08-18 | 2016-02-25 | 3M Innovative Properties Company | Conductive layered structure and methods of making same |
| US9580672B2 (en) * | 2014-09-26 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning composition and method for semiconductor device fabrication |
| US10651028B2 (en) * | 2014-11-13 | 2020-05-12 | Mitsubishi Gas Chemical Company, Inc. | Semiconductor element cleaning solution that suppresses damage to tungsten-containing materials, and method for cleaning semiconductor element using same |
| KR102427699B1 (ko) * | 2015-04-27 | 2022-08-01 | 삼성전자주식회사 | 포토레지스트 제거용 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| US10752867B2 (en) * | 2018-03-28 | 2020-08-25 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning compositions |
| KR102955829B1 (ko) | 2018-11-14 | 2026-04-23 | 램 리써치 코포레이션 | 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들 |
| CN120762258A (zh) | 2018-12-20 | 2025-10-10 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| US12125711B2 (en) | 2019-03-18 | 2024-10-22 | Lam Research Corporation | Reducing roughness of extreme ultraviolet lithography resists |
| WO2020223011A1 (en) | 2019-04-30 | 2020-11-05 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI910974B (zh) | 2019-06-26 | 2026-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| TWI849159B (zh) | 2019-06-28 | 2024-07-21 | 美商蘭姆研究公司 | 光阻膜的乾式腔室清潔 |
| CN111073367A (zh) * | 2019-11-12 | 2020-04-28 | 江苏鑫露化工新材料有限公司 | 一种混合己二酸醇酰胺固化剂的制备方法 |
| CN114200776A (zh) | 2020-01-15 | 2022-03-18 | 朗姆研究公司 | 用于光刻胶粘附和剂量减少的底层 |
| CN115244664A (zh) | 2020-02-28 | 2022-10-25 | 朗姆研究公司 | 用于减少euv图案化缺陷的多层硬掩模 |
| KR102601038B1 (ko) | 2020-07-07 | 2023-11-09 | 램 리써치 코포레이션 | 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스 |
| KR102673863B1 (ko) | 2020-11-13 | 2024-06-11 | 램 리써치 코포레이션 | 포토레지스트의 건식 제거를 위한 프로세스 툴 |
| KR20250142946A (ko) | 2020-12-08 | 2025-09-30 | 램 리써치 코포레이션 | 유기 증기를 사용한 포토레지스트 현상 |
| US20250093781A1 (en) * | 2021-07-29 | 2025-03-20 | Lam Research Corporation | Rework of metal-containing photoresist |
| US12504692B2 (en) | 2022-07-01 | 2025-12-23 | Lam Research Corporation | Cyclic development of metal oxide based photoresist for etch stop deterrence |
| EP4681251A1 (en) | 2023-03-17 | 2026-01-21 | LAM Research Corporation | Integration of dry development and etch processes for euv patterning in a single process chamber |
| KR20250034920A (ko) | 2023-07-27 | 2025-03-11 | 램 리써치 코포레이션 | 금속-함유 포토레지스트에 대한 올-인-원 건식 현상 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09133983A (ja) * | 1995-06-12 | 1997-05-20 | Fuji Photo Film Co Ltd | ハロゲン化銀写真感光材料及びそれに用いるヒドロキサム酸化合物 |
| JPH095920A (ja) * | 1995-06-16 | 1997-01-10 | Fuji Photo Film Co Ltd | ハロゲン化銀写真感光材料及びそれに用いるヒドロキサム酸化合物 |
| JPH0990546A (ja) * | 1995-09-21 | 1997-04-04 | Fuji Photo Film Co Ltd | ハロゲン化銀写真感光材料及びそれに用いるヒドロキサム酸化合物 |
| JP3737196B2 (ja) | 1996-06-17 | 2006-01-18 | 積水ハウス株式会社 | 住宅の水平ブレース配置方法 |
| DE19751945A1 (de) | 1997-11-24 | 1999-05-27 | Agfa Gevaert Ag | Wässrige Zubereitung als Oxidationsschutz |
| JP3891735B2 (ja) * | 1998-08-05 | 2007-03-14 | 三星電子株式会社 | アルコキシｎ−ヒドロキシアルキルアルカンアミドからなるレジスト除去剤、レジスト除去用組成物、これらの製造方法及びこれらを用いたレジスト除去方法 |
| US20030022800A1 (en) * | 2001-06-14 | 2003-01-30 | Peters Darryl W. | Aqueous buffered fluoride-containing etch residue removers and cleaners |
| JP4810764B2 (ja) * | 2001-06-29 | 2011-11-09 | 三菱瓦斯化学株式会社 | レジスト剥離剤組成物 |
| KR100434491B1 (ko) * | 2001-08-17 | 2004-06-05 | 삼성전자주식회사 | 레지스트 또는 식각 부산물 제거용 조성물 및 이를 이용한레지스트 제거 방법 |
| JP4661007B2 (ja) | 2001-08-23 | 2011-03-30 | 昭和電工株式会社 | サイドウォール除去液 |
| JP2003122028A (ja) | 2001-10-17 | 2003-04-25 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
| JP2004029346A (ja) | 2002-06-25 | 2004-01-29 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
| JPWO2005040931A1 (ja) * | 2003-10-29 | 2007-04-19 | ナガセケムテックス株式会社 | フォトレジスト剥離用組成物及び剥離方法 |
-
2005
- 2005-06-15 KR KR1020050051421A patent/KR100705416B1/ko not_active Expired - Fee Related
-
2006
- 2006-04-19 US US11/406,243 patent/US7608540B2/en not_active Expired - Fee Related
- 2006-05-23 JP JP2006142882A patent/JP4880361B2/ja not_active Expired - Fee Related
-
2009
- 2009-09-22 US US12/564,077 patent/US7687448B2/en not_active Expired - Fee Related
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