JP4880361B2 - フォトレジスト除去用組成物、フォトレジスト除去用組成物の製造方法、フォトレジスト除去用組成物を用いたフォトレジストの除去方法、及び半導体装置の製造方法 - Google Patents

フォトレジスト除去用組成物、フォトレジスト除去用組成物の製造方法、フォトレジスト除去用組成物を用いたフォトレジストの除去方法、及び半導体装置の製造方法 Download PDF

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Publication number
JP4880361B2
JP4880361B2 JP2006142882A JP2006142882A JP4880361B2 JP 4880361 B2 JP4880361 B2 JP 4880361B2 JP 2006142882 A JP2006142882 A JP 2006142882A JP 2006142882 A JP2006142882 A JP 2006142882A JP 4880361 B2 JP4880361 B2 JP 4880361B2
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Japan
Prior art keywords
photoresist
composition
mass
film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2006142882A
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English (en)
Japanese (ja)
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JP2006350325A5 (enExample
JP2006350325A (ja
Inventor
正 大 朴
弼 權 田
明 玉 韓
▲せ▼ 娟 金
光 信 林
泰 孝 崔
勝 基 蔡
陽 求 李
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of JP2006350325A5 publication Critical patent/JP2006350325A5/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5013—Organic solvents containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/266—Esters or carbonates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3263—Amides or imides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3272—Urea, guanidine or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2006142882A 2005-06-15 2006-05-23 フォトレジスト除去用組成物、フォトレジスト除去用組成物の製造方法、フォトレジスト除去用組成物を用いたフォトレジストの除去方法、及び半導体装置の製造方法 Expired - Fee Related JP4880361B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050051421A KR100705416B1 (ko) 2005-06-15 2005-06-15 포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법
KR10-2005-0051421 2005-06-15

Publications (3)

Publication Number Publication Date
JP2006350325A JP2006350325A (ja) 2006-12-28
JP2006350325A5 JP2006350325A5 (enExample) 2009-07-02
JP4880361B2 true JP4880361B2 (ja) 2012-02-22

Family

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Family Applications (1)

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JP2006142882A Expired - Fee Related JP4880361B2 (ja) 2005-06-15 2006-05-23 フォトレジスト除去用組成物、フォトレジスト除去用組成物の製造方法、フォトレジスト除去用組成物を用いたフォトレジストの除去方法、及び半導体装置の製造方法

Country Status (3)

Country Link
US (2) US7608540B2 (enExample)
JP (1) JP4880361B2 (enExample)
KR (1) KR100705416B1 (enExample)

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KR101486116B1 (ko) 2008-10-09 2015-01-28 아반토르 퍼포먼스 머티리얼스, 인크. 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물
KR101487853B1 (ko) * 2009-02-03 2015-01-29 이데미쓰 고산 가부시키가이샤 레지스트 박리제 조성물 및 그것을 이용한 레지스트 박리 방법
JP6283477B2 (ja) 2012-06-25 2018-02-21 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ アミド成分を含むフォトレジスト
JP6231423B2 (ja) * 2014-04-09 2017-11-15 東京応化工業株式会社 フォトリソグラフィ用剥離液及びパターン形成方法
US10168805B2 (en) 2014-08-18 2019-01-01 3M Innovative Properties Company Conductive layered structure and methods of making same
US9580672B2 (en) * 2014-09-26 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning composition and method for semiconductor device fabrication
JP6555273B2 (ja) * 2014-11-13 2019-08-07 三菱瓦斯化学株式会社 タングステンを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法
KR102427699B1 (ko) * 2015-04-27 2022-08-01 삼성전자주식회사 포토레지스트 제거용 조성물 및 이를 이용한 반도체 장치의 제조 방법
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
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CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
CN111073367A (zh) * 2019-11-12 2020-04-28 江苏鑫露化工新材料有限公司 一种混合己二酸醇酰胺固化剂的制备方法
KR20250007037A (ko) 2020-01-15 2025-01-13 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
WO2021173557A1 (en) 2020-02-28 2021-09-02 Lam Research Corporation Multi-layer hardmask for defect reduction in euv patterning
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
JP7562696B2 (ja) 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール
CN118020031A (zh) * 2021-07-29 2024-05-10 朗姆研究公司 含金属光致抗蚀剂的再加工
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Also Published As

Publication number Publication date
US7687448B2 (en) 2010-03-30
KR20060131180A (ko) 2006-12-20
KR100705416B1 (ko) 2007-04-10
US20060287207A1 (en) 2006-12-21
US20100009885A1 (en) 2010-01-14
US7608540B2 (en) 2009-10-27
JP2006350325A (ja) 2006-12-28

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