KR100705416B1 - 포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법 - Google Patents

포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR100705416B1
KR100705416B1 KR1020050051421A KR20050051421A KR100705416B1 KR 100705416 B1 KR100705416 B1 KR 100705416B1 KR 1020050051421 A KR1020050051421 A KR 1020050051421A KR 20050051421 A KR20050051421 A KR 20050051421A KR 100705416 B1 KR100705416 B1 KR 100705416B1
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KR
South Korea
Prior art keywords
photoresist
composition
hydroxy
weight
compound
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Expired - Fee Related
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KR1020050051421A
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English (en)
Korean (ko)
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KR20060131180A (ko
Inventor
박정대
전필권
한명옥
김세연
임광신
최태효
채승기
이양구
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삼성전자주식회사
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Priority to KR1020050051421A priority Critical patent/KR100705416B1/ko
Priority to US11/406,243 priority patent/US7608540B2/en
Priority to JP2006142882A priority patent/JP4880361B2/ja
Publication of KR20060131180A publication Critical patent/KR20060131180A/ko
Application granted granted Critical
Publication of KR100705416B1 publication Critical patent/KR100705416B1/ko
Priority to US12/564,077 priority patent/US7687448B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5013—Organic solvents containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/266—Esters or carbonates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3263—Amides or imides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3272—Urea, guanidine or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020050051421A 2005-06-15 2005-06-15 포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법 Expired - Fee Related KR100705416B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050051421A KR100705416B1 (ko) 2005-06-15 2005-06-15 포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법
US11/406,243 US7608540B2 (en) 2005-06-15 2006-04-19 Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition
JP2006142882A JP4880361B2 (ja) 2005-06-15 2006-05-23 フォトレジスト除去用組成物、フォトレジスト除去用組成物の製造方法、フォトレジスト除去用組成物を用いたフォトレジストの除去方法、及び半導体装置の製造方法
US12/564,077 US7687448B2 (en) 2005-06-15 2009-09-22 Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050051421A KR100705416B1 (ko) 2005-06-15 2005-06-15 포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법

Publications (2)

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KR20060131180A KR20060131180A (ko) 2006-12-20
KR100705416B1 true KR100705416B1 (ko) 2007-04-10

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KR1020050051421A Expired - Fee Related KR100705416B1 (ko) 2005-06-15 2005-06-15 포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법

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US (2) US7608540B2 (enExample)
JP (1) JP4880361B2 (enExample)
KR (1) KR100705416B1 (enExample)

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US20100183853A1 (en) * 2007-06-12 2010-07-22 Takashi Ihara Stripping agent for resist film on/above conductive polymer, method for stripping resist film, and substrate having patterned conductive polymer
CN201219685Y (zh) * 2008-04-16 2009-04-15 韩广民 组装结构产品及庭院椅
KR101486116B1 (ko) 2008-10-09 2015-01-28 아반토르 퍼포먼스 머티리얼스, 인크. 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물
KR101487853B1 (ko) * 2009-02-03 2015-01-29 이데미쓰 고산 가부시키가이샤 레지스트 박리제 조성물 및 그것을 이용한 레지스트 박리 방법
JP6283477B2 (ja) 2012-06-25 2018-02-21 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ アミド成分を含むフォトレジスト
JP6231423B2 (ja) * 2014-04-09 2017-11-15 東京応化工業株式会社 フォトリソグラフィ用剥離液及びパターン形成方法
US10168805B2 (en) 2014-08-18 2019-01-01 3M Innovative Properties Company Conductive layered structure and methods of making same
US9580672B2 (en) * 2014-09-26 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning composition and method for semiconductor device fabrication
JP6555273B2 (ja) * 2014-11-13 2019-08-07 三菱瓦斯化学株式会社 タングステンを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法
KR102427699B1 (ko) * 2015-04-27 2022-08-01 삼성전자주식회사 포토레지스트 제거용 조성물 및 이를 이용한 반도체 장치의 제조 방법
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
IL277275B2 (en) * 2018-03-28 2023-11-01 Fujifilm Electronic Mat Usa Inc cleaning products
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
CN111073367A (zh) * 2019-11-12 2020-04-28 江苏鑫露化工新材料有限公司 一种混合己二酸醇酰胺固化剂的制备方法
KR20250007037A (ko) 2020-01-15 2025-01-13 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
WO2021173557A1 (en) 2020-02-28 2021-09-02 Lam Research Corporation Multi-layer hardmask for defect reduction in euv patterning
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
JP7562696B2 (ja) 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール
CN118020031A (zh) * 2021-07-29 2024-05-10 朗姆研究公司 含金属光致抗蚀剂的再加工
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber

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JPH095920A (ja) * 1995-06-16 1997-01-10 Fuji Photo Film Co Ltd ハロゲン化銀写真感光材料及びそれに用いるヒドロキサム酸化合物
JPH0990546A (ja) * 1995-09-21 1997-04-04 Fuji Photo Film Co Ltd ハロゲン化銀写真感光材料及びそれに用いるヒドロキサム酸化合物
JPH09133983A (ja) * 1995-06-12 1997-05-20 Fuji Photo Film Co Ltd ハロゲン化銀写真感光材料及びそれに用いるヒドロキサム酸化合物
JPH11228956A (ja) 1997-11-24 1999-08-24 Agfa Gevaert Ag 酸化防止剤としての水性配合物

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JPH09133983A (ja) * 1995-06-12 1997-05-20 Fuji Photo Film Co Ltd ハロゲン化銀写真感光材料及びそれに用いるヒドロキサム酸化合物
JPH095920A (ja) * 1995-06-16 1997-01-10 Fuji Photo Film Co Ltd ハロゲン化銀写真感光材料及びそれに用いるヒドロキサム酸化合物
JPH0990546A (ja) * 1995-09-21 1997-04-04 Fuji Photo Film Co Ltd ハロゲン化銀写真感光材料及びそれに用いるヒドロキサム酸化合物
JPH11228956A (ja) 1997-11-24 1999-08-24 Agfa Gevaert Ag 酸化防止剤としての水性配合物

Also Published As

Publication number Publication date
US7687448B2 (en) 2010-03-30
KR20060131180A (ko) 2006-12-20
US20060287207A1 (en) 2006-12-21
JP4880361B2 (ja) 2012-02-22
US20100009885A1 (en) 2010-01-14
US7608540B2 (en) 2009-10-27
JP2006350325A (ja) 2006-12-28

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