JP2008509554A5 - - Google Patents

Download PDF

Info

Publication number
JP2008509554A5
JP2008509554A5 JP2007524802A JP2007524802A JP2008509554A5 JP 2008509554 A5 JP2008509554 A5 JP 2008509554A5 JP 2007524802 A JP2007524802 A JP 2007524802A JP 2007524802 A JP2007524802 A JP 2007524802A JP 2008509554 A5 JP2008509554 A5 JP 2008509554A5
Authority
JP
Japan
Prior art keywords
composition
alkanolamine
water
diethylene glycol
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007524802A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008509554A (ja
JP4625842B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2005/022598 external-priority patent/WO2006023061A1/en
Publication of JP2008509554A publication Critical patent/JP2008509554A/ja
Publication of JP2008509554A5 publication Critical patent/JP2008509554A5/ja
Application granted granted Critical
Publication of JP4625842B2 publication Critical patent/JP4625842B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2007524802A 2004-08-03 2005-06-23 マイクロエレクトロニクスの基板用の洗浄組成物 Expired - Fee Related JP4625842B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59831804P 2004-08-03 2004-08-03
PCT/US2005/022598 WO2006023061A1 (en) 2004-08-03 2005-06-23 Cleaning compositions for microelectronics substrates

Publications (3)

Publication Number Publication Date
JP2008509554A JP2008509554A (ja) 2008-03-27
JP2008509554A5 true JP2008509554A5 (enExample) 2008-08-07
JP4625842B2 JP4625842B2 (ja) 2011-02-02

Family

ID=35355858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007524802A Expired - Fee Related JP4625842B2 (ja) 2004-08-03 2005-06-23 マイクロエレクトロニクスの基板用の洗浄組成物

Country Status (17)

Country Link
EP (1) EP1789527B1 (enExample)
JP (1) JP4625842B2 (enExample)
KR (1) KR101162797B1 (enExample)
CN (1) CN1993457B (enExample)
AT (1) ATE450595T1 (enExample)
BR (1) BRPI0514058A (enExample)
CA (1) CA2575991A1 (enExample)
DE (1) DE602005018075D1 (enExample)
DK (1) DK1789527T3 (enExample)
ES (1) ES2335786T3 (enExample)
IL (1) IL181106A0 (enExample)
MY (1) MY144284A (enExample)
NO (1) NO20071196L (enExample)
PT (1) PT1789527E (enExample)
TW (1) TWI390032B (enExample)
WO (1) WO2006023061A1 (enExample)
ZA (1) ZA200700653B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101088568B1 (ko) * 2005-04-19 2011-12-05 아반토르 퍼포먼스 머티리얼스, 인크. 갈바닉 부식을 억제하는 비수성 포토레지스트 스트립퍼
EP1946358A4 (en) 2005-11-09 2009-03-04 Advanced Tech Materials COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS ON WHICH DIELECTRIC MATERIAL WITH LOW DIELECTRIC CONSTANT
ATE467513T1 (de) * 2006-03-22 2010-05-15 Fujifilm Corp Tintenwaschflüssigkeit und reinigungsverfahren
KR20100015974A (ko) * 2007-03-31 2010-02-12 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 웨이퍼 재생을 위한 물질의 스트리핑 방법
JP4903242B2 (ja) * 2008-10-28 2012-03-28 アバントール パフォーマンス マテリアルズ， インコーポレイテッド 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物
CN102289159A (zh) * 2010-06-18 2011-12-21 拉姆科技有限公司 用于除去光致抗蚀剂的组合物及利用其形成半导体图案的方法
JP2012018982A (ja) * 2010-07-06 2012-01-26 Tosoh Corp レジスト剥離剤及びそれを用いた剥離法
WO2012048079A2 (en) 2010-10-06 2012-04-12 Advanced Technology Materials, Inc. Composition and process for selectively etching metal nitrides
CN102411269A (zh) * 2011-11-18 2012-04-11 西安东旺精细化学有限公司 光致抗蚀剂膜的剥离液组合物
CN104220643B (zh) * 2011-12-20 2016-05-04 索尔维投资有限公司 酚类化合物作为金属表面腐蚀活化剂的用途
CN103631101B (zh) * 2012-08-22 2018-01-09 得凯莫斯公司弗罗里达有限公司 包含含氟表面活性剂的光阻剥除剂
KR101668063B1 (ko) * 2013-05-07 2016-10-20 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법
CN105432147B (zh) * 2013-07-31 2017-10-20 旭硝子株式会社 电子设备的制造方法
EP3719105B1 (en) * 2013-12-06 2023-09-27 Fujifilm Electronic Materials USA, Inc. Cleaning formulation for removing residues on surfaces
CN103676505B (zh) * 2013-12-23 2016-04-13 大连奥首科技有限公司 一种用于芯片的光刻胶剥离液、制备方法及去胶工艺
CN103839885B (zh) * 2014-03-17 2016-09-07 上海华虹宏力半导体制造有限公司 去除缺陷的方法
KR101710170B1 (ko) * 2014-08-20 2017-02-27 주식회사 엘지화학 포토레지스트용 스트리퍼 폐액의 재생 방법
CN105087187A (zh) * 2015-08-30 2015-11-25 烟台顺隆化工科技有限公司 一种硒污染建筑废物用洗涤剂
WO2017208767A1 (ja) * 2016-06-03 2017-12-07 富士フイルム株式会社 処理液、基板洗浄方法およびレジストの除去方法
CN107974687A (zh) * 2017-10-24 2018-05-01 广东富行洗涤剂科技有限公司 一种用于玻璃用真空镀膜模具的褪模剂
KR102242918B1 (ko) * 2018-12-21 2021-04-22 주식회사 이엔에프테크놀로지 식각액 조성물
JP6688978B1 (ja) * 2019-03-25 2020-04-28 パナソニックＩｐマネジメント株式会社 レジスト剥離液
IT201900021549A1 (it) * 2019-11-19 2021-05-19 Deco Ind S Coop P A Prodotto per il trattamento di un elettrodomestico configurato per il lavaggio
MX2022011056A (es) * 2020-03-11 2022-12-06 Advansix Resins & Chemicals Llc Tensioactivos para productos electronicos.

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6187730B1 (en) * 1990-11-05 2001-02-13 Ekc Technology, Inc. Hydroxylamine-gallic compound composition and process
US7205265B2 (en) * 1990-11-05 2007-04-17 Ekc Technology, Inc. Cleaning compositions and methods of use thereof
US6546939B1 (en) * 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US5308745A (en) 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins

Similar Documents

Publication Publication Date Title
JP2008509554A5 (enExample)
JP5089808B2 (ja) Ｌｃｄを製造するためのフォトレジスト剥離組成物
CN1875325B (zh) 含有金属卤化物腐蚀抑制剂的碱性后等离子体蚀刻/灰化残余物去除剂和光致抗蚀剂剥离组合物
JP5662365B2 (ja) クリーニング調合物およびそのクリーニング調合物の使用方法
JP5426738B2 (ja) レゾルシノールを含有する剥離溶液を用いた金属保護の改善
JP4725905B2 (ja) フォトレジスト剥離剤組成物及びフォトレジスト剥離方法
TWI275904B (en) Photoresist stripper composition, and exfoliation method of a photoresist using it
JP2002543272A5 (enExample)
JP2009075285A (ja) 半導体デバイスの剥離液、及び、剥離方法
EP1612858A3 (en) Composition for stripping and cleaning and use thereof
CN1993457B (zh) 微电子衬底的清洗组合物
JP2006350325A5 (enExample)
JP2013511063A (ja) 非水系レジスト剥離液組成物
JP4902898B2 (ja) 超小型電子基板のための、安定化された非水性洗浄組成物
CN103975052A (zh) 具有铜/唑类聚合物抑制作用的微电子衬底清洁组合物
CN1784487A (zh) 非水的、非腐蚀性的微电子清洁组合物
TW200613543A (en) Aqueous resist stripper composition
TW200715074A (en) Aqueous cleaning composition and method for using same
JP2008537182A5 (enExample)
KR20110083689A (ko) 다중-금속 소자 처리를 위한 글루콘산 함유 포토레지스트 세정 조성물
WO2009073589A1 (en) Fluoride-free photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction
WO2014079145A1 (zh) 一种去除光刻胶的清洗液
WO2006121580A3 (en) Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist
CN108139692A (zh) 光致抗蚀剂剥离液
JP2004287288A (ja) レジスト剥離用組成物及びレジスト剥離方法