CN103975052A - 具有铜/唑类聚合物抑制作用的微电子衬底清洁组合物 - Google Patents
具有铜/唑类聚合物抑制作用的微电子衬底清洁组合物 Download PDFInfo
- Publication number
- CN103975052A CN103975052A CN201280059946.4A CN201280059946A CN103975052A CN 103975052 A CN103975052 A CN 103975052A CN 201280059946 A CN201280059946 A CN 201280059946A CN 103975052 A CN103975052 A CN 103975052A
- Authority
- CN
- China
- Prior art keywords
- component
- ether
- composition
- mixture
- glycol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 171
- 238000004140 cleaning Methods 0.000 title claims abstract description 58
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 238000004377 microelectronic Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 title claims description 37
- 239000010949 copper Substances 0.000 title description 42
- 229910052802 copper Inorganic materials 0.000 title description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title description 17
- 230000005764 inhibitory process Effects 0.000 title description 6
- 229920000642 polymer Polymers 0.000 title description 2
- 238000005260 corrosion Methods 0.000 claims abstract description 57
- 230000007797 corrosion Effects 0.000 claims abstract description 56
- 239000003112 inhibitor Substances 0.000 claims abstract description 49
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- -1 cyclic amide compound Chemical class 0.000 claims abstract description 40
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 23
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 36
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims description 31
- 150000008442 polyphenolic compounds Polymers 0.000 claims description 25
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 20
- 239000012964 benzotriazole Substances 0.000 claims description 19
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 17
- 150000001412 amines Chemical class 0.000 claims description 16
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 15
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 15
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 14
- 239000004210 ether based solvent Substances 0.000 claims description 13
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 claims description 12
- 239000013543 active substance Substances 0.000 claims description 11
- 229940093476 ethylene glycol Drugs 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 8
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 8
- 239000002738 chelating agent Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000008139 complexing agent Substances 0.000 claims description 7
- 239000006184 cosolvent Substances 0.000 claims description 7
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 7
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 7
- 229940074391 gallic acid Drugs 0.000 claims description 7
- 235000004515 gallic acid Nutrition 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000003495 polar organic solvent Substances 0.000 claims description 7
- 125000003831 tetrazolyl group Chemical group 0.000 claims description 7
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 claims description 6
- 150000003950 cyclic amides Chemical class 0.000 claims description 6
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 6
- 229940043276 diisopropanolamine Drugs 0.000 claims description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
- 229940079877 pyrogallol Drugs 0.000 claims description 6
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 6
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 claims description 5
- RJLKIAGOYBARJG-UHFFFAOYSA-N 1,3-dimethylpiperidin-2-one Chemical compound CC1CCCN(C)C1=O RJLKIAGOYBARJG-UHFFFAOYSA-N 0.000 claims description 5
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 claims description 5
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 5
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 5
- FPEANFVVZUKNFU-UHFFFAOYSA-N 2-sulfanylbenzotriazole Chemical compound C1=CC=CC2=NN(S)N=C21 FPEANFVVZUKNFU-UHFFFAOYSA-N 0.000 claims description 5
- JMTMSDXUXJISAY-UHFFFAOYSA-N 2H-benzotriazol-4-ol Chemical compound OC1=CC=CC2=C1N=NN2 JMTMSDXUXJISAY-UHFFFAOYSA-N 0.000 claims description 5
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 claims description 5
- 150000001408 amides Chemical class 0.000 claims description 5
- 238000004380 ashing Methods 0.000 claims description 5
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 5
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 claims description 5
- 150000002596 lactones Chemical class 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 150000003457 sulfones Chemical class 0.000 claims description 5
- 150000003462 sulfoxides Chemical class 0.000 claims description 5
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 claims description 4
- VYMPLPIFKRHAAC-UHFFFAOYSA-N 1,2-ethanedithiol Chemical compound SCCS VYMPLPIFKRHAAC-UHFFFAOYSA-N 0.000 claims description 4
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 claims description 4
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 235000011187 glycerol Nutrition 0.000 claims description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 3
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 3
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 3
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 3
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 3
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 2
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 claims description 2
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 claims description 2
- CUZKCNWZBXLAJX-UHFFFAOYSA-N 2-phenylmethoxyethanol Chemical compound OCCOCC1=CC=CC=C1 CUZKCNWZBXLAJX-UHFFFAOYSA-N 0.000 claims description 2
- ABSTXSZPGHDTAF-UHFFFAOYSA-N 4-amino-pentanoic acid Chemical compound CC(N)CCC(O)=O ABSTXSZPGHDTAF-UHFFFAOYSA-N 0.000 claims description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 2
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 claims description 2
- PDXRQENMIVHKPI-UHFFFAOYSA-N cyclohexane-1,1-diol Chemical compound OC1(O)CCCCC1 PDXRQENMIVHKPI-UHFFFAOYSA-N 0.000 claims description 2
- YVIVRJLWYJGJTJ-UHFFFAOYSA-N gamma-Valerolactam Chemical compound CC1CCC(=O)N1 YVIVRJLWYJGJTJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229960005323 phenoxyethanol Drugs 0.000 claims description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 2
- 150000003952 β-lactams Chemical class 0.000 claims description 2
- 150000003953 γ-lactams Chemical class 0.000 claims description 2
- 230000004048 modification Effects 0.000 abstract description 14
- 238000012986 modification Methods 0.000 abstract description 14
- 150000001875 compounds Chemical class 0.000 abstract description 12
- 230000008020 evaporation Effects 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract description 3
- 230000002401 inhibitory effect Effects 0.000 abstract description 2
- 239000002904 solvent Substances 0.000 abstract description 2
- 150000002989 phenols Polymers 0.000 abstract 2
- 150000004679 hydroxides Chemical class 0.000 abstract 1
- 229920006295 polythiol Polymers 0.000 abstract 1
- 150000005846 sugar alcohols Polymers 0.000 abstract 1
- 125000003396 thiol group Chemical group [H]S* 0.000 abstract 1
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 239000004411 aluminium Substances 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 239000003989 dielectric material Substances 0.000 description 6
- 125000003709 fluoroalkyl group Chemical group 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 125000005372 silanol group Chemical group 0.000 description 4
- 241000894007 species Species 0.000 description 4
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 description 4
- 150000003852 triazoles Chemical class 0.000 description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 150000002009 diols Chemical class 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229960004418 trolamine Drugs 0.000 description 3
- FYUDERIVRYVSGE-UHFFFAOYSA-N 1,3-diaminoprop-1-en-2-ol Chemical compound NCC(O)=CN FYUDERIVRYVSGE-UHFFFAOYSA-N 0.000 description 2
- MBDUIEKYVPVZJH-UHFFFAOYSA-N 1-ethylsulfonylethane Chemical compound CCS(=O)(=O)CC MBDUIEKYVPVZJH-UHFFFAOYSA-N 0.000 description 2
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 2
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical class CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- 229940120146 EDTMP Drugs 0.000 description 2
- 241000282326 Felis catus Species 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 2
- MFGOZCIHXVFZBC-UHFFFAOYSA-N N-Propyl-Pyrrole Natural products CCCN1C=CC=C1 MFGOZCIHXVFZBC-UHFFFAOYSA-N 0.000 description 2
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 2
- 150000003973 alkyl amines Chemical class 0.000 description 2
- 239000003945 anionic surfactant Substances 0.000 description 2
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 2
- 229960003237 betaine Drugs 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- FBSFWRHWHYMIOG-UHFFFAOYSA-N methyl 3,4,5-trihydroxybenzoate Chemical compound COC(=O)C1=CC(O)=C(O)C(O)=C1 FBSFWRHWHYMIOG-UHFFFAOYSA-N 0.000 description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- NAOLWIGVYRIGTP-UHFFFAOYSA-N 1,3,5-trihydroxyanthracene-9,10-dione Chemical compound C1=CC(O)=C2C(=O)C3=CC(O)=CC(O)=C3C(=O)C2=C1 NAOLWIGVYRIGTP-UHFFFAOYSA-N 0.000 description 1
- GDXHBFHOEYVPED-UHFFFAOYSA-N 1-(2-butoxyethoxy)butane Chemical compound CCCCOCCOCCCC GDXHBFHOEYVPED-UHFFFAOYSA-N 0.000 description 1
- XWSGEVNYFYKXCP-UHFFFAOYSA-N 2-[carboxymethyl(methyl)amino]acetic acid Chemical compound OC(=O)CN(C)CC(O)=O XWSGEVNYFYKXCP-UHFFFAOYSA-N 0.000 description 1
- NCFXAHBHGZLSFB-UHFFFAOYSA-N 2-methyl-2-[methyl(propan-2-yl)amino]pentanoic acid Chemical compound CCCC(C)(C(O)=O)N(C)C(C)C NCFXAHBHGZLSFB-UHFFFAOYSA-N 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- KWYJDIUEHHCHCZ-UHFFFAOYSA-N 3-[2-[bis(2-carboxyethyl)amino]ethyl-(2-carboxyethyl)amino]propanoic acid Chemical compound OC(=O)CCN(CCC(O)=O)CCN(CCC(O)=O)CCC(O)=O KWYJDIUEHHCHCZ-UHFFFAOYSA-N 0.000 description 1
- UUCQGNWZASKXNN-UHFFFAOYSA-N 3-ethylcatechol Chemical compound CCC1=CC=CC(O)=C1O UUCQGNWZASKXNN-UHFFFAOYSA-N 0.000 description 1
- PGSWEKYNAOWQDF-UHFFFAOYSA-N 3-methylcatechol Chemical compound CC1=CC=CC(O)=C1O PGSWEKYNAOWQDF-UHFFFAOYSA-N 0.000 description 1
- JIGUICYYOYEXFS-UHFFFAOYSA-N 3-tert-butylbenzene-1,2-diol Chemical compound CC(C)(C)C1=CC=CC(O)=C1O JIGUICYYOYEXFS-UHFFFAOYSA-N 0.000 description 1
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 description 1
- DHMQDGOQFOQNFH-UHFFFAOYSA-M Aminoacetate Chemical compound NCC([O-])=O DHMQDGOQFOQNFH-UHFFFAOYSA-M 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 1
- BYRJNWIHXADTSH-UHFFFAOYSA-N C(CCCCCCCCCCC)C(C(=O)O)CNCCC(=O)O Chemical class C(CCCCCCCCCCC)C(C(=O)O)CNCCC(=O)O BYRJNWIHXADTSH-UHFFFAOYSA-N 0.000 description 1
- BTKLMGGKCQZDNC-UHFFFAOYSA-N CC(C)CCCCCCC[O] Chemical compound CC(C)CCCCCCC[O] BTKLMGGKCQZDNC-UHFFFAOYSA-N 0.000 description 1
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 1
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 description 1
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- UWIULCYKVGIOPW-UHFFFAOYSA-N Glycolone Natural products CCOC1=C(CC=CC)C(=O)N(C)c2c(O)cccc12 UWIULCYKVGIOPW-UHFFFAOYSA-N 0.000 description 1
- 206010058490 Hyperoxia Diseases 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-L L-tartrate(2-) Chemical compound [O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O FEWJPZIEWOKRBE-JCYAYHJZSA-L 0.000 description 1
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 1
- 229920000604 Polyethylene Glycol 200 Polymers 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- ZTHYODDOHIVTJV-UHFFFAOYSA-N Propyl gallate Chemical compound CCCOC(=O)C1=CC(O)=C(O)C(O)=C1 ZTHYODDOHIVTJV-UHFFFAOYSA-N 0.000 description 1
- 229920004890 Triton X-100 Polymers 0.000 description 1
- 239000013504 Triton X-100 Substances 0.000 description 1
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 125000006177 alkyl benzyl group Chemical group 0.000 description 1
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- CUBCNYWQJHBXIY-UHFFFAOYSA-N benzoic acid;2-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC=C1.OC(=O)C1=CC=CC=C1O CUBCNYWQJHBXIY-UHFFFAOYSA-N 0.000 description 1
- 235000019445 benzyl alcohol Nutrition 0.000 description 1
- 229960004217 benzyl alcohol Drugs 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- QVYARBLCAHCSFJ-UHFFFAOYSA-N butane-1,1-diamine Chemical compound CCCC(N)N QVYARBLCAHCSFJ-UHFFFAOYSA-N 0.000 description 1
- 229930188620 butyrolactone Natural products 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- MRUAUOIMASANKQ-UHFFFAOYSA-N cocamidopropyl betaine Chemical compound CCCCCCCCCCCC(=O)NCCC[N+](C)(C)CC([O-])=O MRUAUOIMASANKQ-UHFFFAOYSA-N 0.000 description 1
- 229940073507 cocamidopropyl betaine Drugs 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000007046 ethoxylation reaction Methods 0.000 description 1
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000000222 hyperoxic effect Effects 0.000 description 1
- 239000002563 ionic surfactant Substances 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229960003511 macrogol Drugs 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- IWYDHOAUDWTVEP-UHFFFAOYSA-N mandelic acid Chemical compound OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- IBKQQKPQRYUGBJ-UHFFFAOYSA-N methyl gallate Natural products CC(=O)C1=CC(O)=C(O)C(O)=C1 IBKQQKPQRYUGBJ-UHFFFAOYSA-N 0.000 description 1
- 150000002780 morpholines Chemical class 0.000 description 1
- 239000011356 non-aqueous organic solvent Substances 0.000 description 1
- UYDLBVPAAFVANX-UHFFFAOYSA-N octylphenoxy polyethoxyethanol Chemical compound CC(C)(C)CC(C)(C)C1=CC=C(OCCOCCOCCOCCO)C=C1 UYDLBVPAAFVANX-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- UWJJYHHHVWZFEP-UHFFFAOYSA-N pentane-1,1-diol Chemical compound CCCCC(O)O UWJJYHHHVWZFEP-UHFFFAOYSA-N 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229940071089 sarcosinate Drugs 0.000 description 1
- 150000003333 secondary alcohols Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229940084106 spermaceti Drugs 0.000 description 1
- 239000012177 spermaceti Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/263—Ethers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本发明涉及pH>8的半水性、碱性的微电子清洁组合物,包含:(A)至少一种与水接触时会产生氢氧化物的仲链烷醇胺;(B)以乙酸正丁酯的蒸发速率为基准速率1.0计,蒸发速率为0.3或更低的至少一种有机醇醚溶剂;(C)至少一种抑制腐蚀的环状酰胺化合物;(D)占组合物重量的0.08%或更低的至少一种平衡pH的唑类金属腐蚀抑制剂;和(E)水;以及任选的(F)至少一种多羟基酚类类化合物腐蚀抑制剂;和(G)包含邻位羟基或邻位巯基以与多羟基酚类类化合物腐蚀抑制剂进行配对的至少一种多元醇或多元硫醇表面改性剂。
Description
技术领域
本发明涉及一种用于通过去除光刻胶、UV/等离子硬化的光刻胶以及等离子蚀刻后(post plasma etch)或蚀刻/灰化后(post etch/ash)残留物而清洁微电子衬底的组合物,并且能在这样做的同时与铝、铜和低κ电介质(low-kdielectrics)以及特别是多孔的低κ电介质相容。特别地,本发明实质上提供了半水基的清洁剂组合物并且还提供了用于清洁微电子衬底的方法和使用这种组合物的装置。
背景技术
制造半导体装置通过以下步骤:用光刻胶涂覆无机衬底;通过曝光来图案化光刻胶膜以及在这之后显影;利用图案化的光刻胶膜作为掩模来蚀刻无机衬底所曝光的区域以形成精密电路;以及从无机衬底上去除图案化的光刻胶膜。可选地,在按如上述相同的方式形成精密电路后,灰化所述图案化的光刻胶膜,然后从无机衬底上去除余留的光刻胶残余物。
为剥离光刻胶(PR)、UV/等离子硬化的PR以及等离子蚀刻/灰化残留物,单独使用普通的有机溶剂一般不能有效提供所需的清洁能力。特定的活性剂例如氟化物和碱(alkaline base)常用于微电子制剂。然而,许多碱例如胺和氢氧化铵会导致严重的金属腐蚀。腐蚀抑制剂的使用可以减轻/减少这种金属腐蚀,但通常不能针对严重的腐蚀情况/制剂提供足够的保护。因此,工作组合物在无腐蚀抑制剂的情况下必须是与金属完全或“合理相容”的。为了满足现代微电子性能的要求,将“合理相容”定义为“具有或更小的金属蚀刻速率”。将“完全相容”定义为“具有或更小的金属蚀刻速率”。
在碱性的pH条件下,微电子组合物在湿PR剥离以及随后的水冲洗过程中经常会遇到较差的金属堆栈(metal stack)兼容性。金属堆栈的电偶腐蚀带来了更大的挑战。腐蚀抑制剂的使用往往会造成表面改性或在表面上留下残余物,从而导致不期望的电性能变化。
建议在这样的微电子清洁组合物中使用的众多类型的腐蚀抑制剂中包括唑类(azole),尤其是四唑和三唑类,特别是苯并三唑,并且以0.2~2%或更高的水平来使用它们。具有这样的所提及的唑类,尤其是苯并三唑用作腐蚀抑制剂的清洁剂的实例包括,但不限于EP1178359、EP1,752,829、WO2007/111694、US2009/0170037和WO2007/044446。使用苯并三唑作为腐蚀抑制剂的这些清洁组合物通常是基于非水性的有机溶剂的清洁组合物。但是在US2003/144162中的第[0042]段指出苯并三唑并不防止铜的腐蚀。然而,虽然在一些情况下,通常在基于非水性溶剂的清洁组合物中,这些三唑类看起来会为铜提供相当不错的防腐蚀保护,但是我们发现三唑类,例如苯并三唑强烈倾向于在铜表面形成紧密结合的聚合物络合物,其被认为是Cu离子/唑类络合物,例如Cu离子/苯并三唑络合物,下文分别称为Cu(l)/唑类聚合物和Cu(I)/BZT聚合物。若是这样的聚合物的沉积过厚或不受控制,则该Cu(I)/唑类聚合物的形成会导致不利影响。当苯并三唑被用作腐蚀抑制剂时,在铜的表面上形成这种不受期望的Cu(I)/BZT聚合物的现象是特别普遍的,并且尤其是当在具有苯并三唑的清洁组合物中应用二甲基亚砜(DMSO)作为主要的溶剂组分之一时,会造成厚的Cu(l)/BZT聚合物。已发现这些Cu(I)/BZT聚合物会紧密结合到铜的表面并且在于剥离/清洗过程后使用的一般的水清洗过程之后残留在铜的表面。这样的问题已被发现普遍存在于适用平板显示器的衬底中。
对于另一类金属,特别是铜和铝来说,建议使用在这样的清洁组合物中的腐蚀抑制剂为包含邻位羟基的多羟基酚类化合物,例如邻苯二酚、连苯三酚和没食子酸(gallic acid)。使用这样的多羟基酚类化合物作为腐蚀抑制剂的一个缺点是,它们倾向于在被清洗的硅晶片上紧密结合至硅烷醇。即使少量的这种结合也修饰硅表面,且导致性能下降。
因此,丞需一种微电子清洁组合物,其可采用不会形成Cu(I)/唑类聚合物或具有最小化的Cu(I)/唑类聚合物的形成或具有抑制的Cu(I)/唑类聚合物的形成的唑类腐蚀抑制剂。特别需要这样的清洁组合物,其可以是半水性的并且即使在使用该清洁组合物清洗衬底后的水性清洗阶段也不会产生明显的金属腐蚀。额外需要这样的清洁组合物,其对于清洗铝和铜金属化的微电子器件来说表现优异。进一步需要提供这样的清洁组合物,其抑制被用作腐蚀抑制剂的多羟基酚类化合物结合至被清洗的硅晶片上的硅烷醇,并由此抑制了由多羟基酚类腐蚀抑制剂造成的微电子衬底的表面改性。
发明内容
本发明的清洁组合物是半水性的、pH≥8的碱性微电子清洁组合物,其包含以下成分、基本由以下成分组成为或由以下成分组成:
(A)与水接触时生成氢氧化物的至少一种仲链烷醇胺;
(B)以乙酸正丁酯的蒸发速率(evaporation rate)为基准速率1.0计,蒸发速率为0.3或更低的至少一种有机醇醚溶剂;
(C)至少一种抑制腐蚀的环状酰胺化合物;
(D)占该组合物重量的0.08%或更少的至少一种平衡pH的唑类金属腐蚀抑制剂;和
(E)水
以及任选的
(F)至少一种多羟基酚类化合物腐蚀抑制剂;和
(G)至少一种包含邻位羟基或邻位巯基以与所述多羟基酚类化合物腐蚀抑制剂配对的多元醇或多元硫醇表面改性剂。
如果在本发明的组合物中存在组分(F),那么也存在组分(G)。然而,该组合物可以包含组分(G)而不含组分(F)。
本发明的清洁组合物还可任选地包含其他非必要的但有时会需要的组分,例如,
(H)至少一种选自亚砜、砜、酰胺、内酯、醚、醇、叔链烷醇胺和除了那些用作组分(B)的醇醚以外的醇醚的极性有机溶剂/共溶剂;和
(I)至少一种表面活性剂;和
(J)至少一种金属螯合剂或络合剂。
本发明的组合物可用于通过去除光刻胶、UV/等离子硬化的光刻胶以及等离子蚀刻后或蚀刻/灰化后的残留物来清洗微电子衬底,并且能在这样做的同时与铝、铜和低κ电介质以及特别是多孔的低κ电介质相容。为了完成微电子衬底或器件的清洗,使微电子衬底或器件与本发明的组合物在一个足以实现这样的清洗过程的温度接触一段时间。
发明详述
本发明的清洁组合物是微电子清洁组合物,其可采用不会形成Cu(I)/BZT聚合物或具有最小化的Cu(I)/BZT聚合物的形成或具有抑制的Cu(I)/BZT聚合物的形成的唑类腐蚀抑制剂。这样的微电子清洁组合物是半水性的、pH≥8的碱性微电子清洁组合物,其包含以下成分、基本由以下成分组成为或由以下成分组成:
(A)与水接触时生成氢氧化物的至少一种仲链烷醇胺;
(B)以乙酸正丁酯的蒸发速率为基准速率1.0计,蒸发速率为0.3或更低的至少一种有机醇醚溶剂;
(C)至少一种抑制腐蚀的环状酰胺化合物;
(D)占该组合物重量的0.08%或更少的至少一种平衡pH的唑类金属腐蚀抑制剂;和
(E)水。
这样的组合物能够清洗铝和铜金属化的微电子衬底和也具有低κ电介质的衬底。所述衬底可以是任何在微电子器件制造中采用的衬底,特别是硅晶片和玻璃衬底。
在本发明的清洁组合物的另一实施方式中提供了这样的清洁组合物,其还包含用作腐蚀抑制剂的多羟基酚类化合物,该清洁组合物能抑制那些多羟基酚类化合物结合至被清洗的硅晶片上的硅烷醇,并由此抑制了由多羟基酚类腐蚀抑制剂造成的微电子衬底的表面改性。在本发明的清洁组合物的这样的另一实施方式中,该清洁组合物可额外包含:
(F)至少一种多羟基酚类化合物腐蚀抑制剂;和
(G)至少一种包含邻位羟基或邻位巯基以与所述多羟基酚类化合物腐蚀抑制剂配对的多元醇或多元硫醇表面改性剂。如果在本发明的组合物中存在组分(F),那么也存在组分(G)。然而,该组合物可以包含组分(G)而不含组分(F)。
这样的组合物还能够清洗铝和铜金属化的微电子衬底。
本发明的清洁组合物还可任选地包含其他非必要的但有时会需要的组分,例如,
(H)至少一种选自亚砜、砜、酰胺、内酯、醚、醇、叔链烷醇胺和除了那些用作组分(B)的醇醚以外的醇醚的极性有机溶剂/共溶剂;和
(I)至少一种表面活性剂;和
(J)至少一种金属螯合剂或络合剂。
本发明的半水性的碱性微电子清洁组合物具有的pH≥8,优选pH≥9.5,这两者均在未稀释的情况下(“表观pH”),并作为10%的水溶液。
存在于该清洁组合物中的与水接触时生成氢氧化物的至少一种仲链烷醇胺通常占该清洁组合物的重量的约0.1%~约50%,优选约0.5%~约25%,更优选约3%~约15%,以及进一步优选约6%。任何适合的与水接触时生成氢氧化物的仲链烷醇胺可用于本发明的组合物。这样适合的仲链烷醇胺的实例包括,但不限于:二乙醇胺、二异丙醇胺、N-乙基乙醇胺和N-甲基乙醇胺以及它们的混合物。
任何适合的以乙酸正丁酯的蒸发速率为基准速率1.0计,蒸发速率为0.3或更低的有机醇醚溶剂可用于本发明的清洁组合物。优选二醇醚。存在于该清洁组合物中的该有机醇醚溶剂通常占该组合物的重量的约5%~约95%,优选约20%~约80%,更优选约45%~约70%。这样适合的有机醇醚溶剂的实例包括,但不限于:乙二醇丁醚(EGBE)、二乙二醇单甲醚(DEGME)、二乙二醇单乙醚(DEGEE,卡必醇)、丁基乙二醇(butyl glycol)、四乙二醇、二丙二醇甲基醚、乙二醇单甲醚(EGME)、乙二醇单乙醚(EGEE)、乙二醇单丙醚(EGPE)、二甘醇(DEG)、二乙二醇单乙醚(DEGEE)、二乙二醇单丁醚(DEGBE)、丙二醇单甲醚(PGME)、二丙二醇(DPG)、二丙二醇单甲醚(DPGME)、乙二醇单异丙醚、乙二醇单苯醚、乙二醇单苄醚、三乙二醇甲基醚、三乙二醇乙基醚、三乙二醇丁基醚和它们的混合物。优选的有机醇醚溶剂选自乙二醇丁醚、二乙二醇单甲醚、二乙二醇单乙基醚、丁基乙二醇、四乙二醇、二丙二醇甲基醚和它们的混合物。进一步优选为乙二醇丁醚。
存在于该组合物中的至少一种抑制腐蚀的环状酰胺化合物通常占该组合物的重量的约5%~约70%,优选约5%~约50%,更优选约10%~约30%,进一步优选约10%~约20%。任何适合的抑制腐蚀的环状酰胺化合物可用于本发明的组合物。这样适合的抑制腐蚀的环状酰胺化合物的实例包括,但不限于:N-甲基吡咯烷酮、N-乙基吡咯烷酮、N-丙基吡咯烷酮、二甲基-2-哌啶酮、1-(2-羟乙基)-2-吡咯烷酮、β-内酰胺、γ-内酰胺、δ-内酰胺、ε-内酰胺、4-氨基戊酸内酰胺(γ-戊内酰胺)和它们的混合物。抑制腐蚀的环状酰胺化合物优选为N-甲基吡咯烷酮、N-乙基吡咯烷酮、N-丙基吡咯烷酮、二甲基-2-哌啶酮、1-(2-羟乙基)-2-吡咯烷酮和它们的混合物。该环状酰胺化合物进一步优选为N-甲基吡咯烷酮。
存在于该组合物中的至少一种平衡pH的唑类金属腐蚀抑制剂组分的量必须不超过该组合物的重量的约0.08%,优选不超过约0.07%,更优选不超过约0.05%,并且在一个优选的实施方式中不超过该组合物的重量的约0.01%。任何适合的平衡pH的唑类金属腐蚀抑制剂,特别是三唑类和四唑类可用于本发明的组合物。这样适合的平衡pH的唑类腐蚀抑制剂的实例包括,但不限于:苯并三唑、烷基苯并三唑例如甲基苯并三唑(例如4-或5-甲基苯并三唑)、羧基苯并三唑、苯并咪唑、四唑、羟基苯并三唑、2-巯基苯并三唑、2-巯基苯并咪唑、甲苯基三唑、巯基甲基苯并咪唑、1,2,4-三唑、3-氨基-1,2,4-三唑、1-苯基-1H-四唑-5-硫醇和它们的混合物。唑类金属腐蚀抑制剂优选为苯并三唑、羧基苯并三唑、苯并咪唑、四唑、羟基苯并三唑、2-巯基苯并三唑、2-巯基苯并咪唑和它们的混合物。唑类金属腐蚀抑制剂进一步优选为苯并三唑和甲基苯并三唑。
本发明的清洁组合物是半水性的。存在于该组合物中的水通常占该组合物的重量的约5%~约70%,优选约5%~约40%,更优选约10%~约30%,并且在一个优选的实施方式中占该组合物的重量的约20%。
在本发明的清洁组合物的另一个实施方式中,该组合物包含任何适合的多羟基酚类腐蚀抑制剂化合物,当存在于组合物中时,其量通常为该组合物的重量的大于0%~约10%,优选约0.1%~约5%,更优选约0.1%~约1%以及进一步优选约0.1%~约0.5%。可使用任何适合的多羟基酚类腐蚀抑制剂化合物且包括,但不限于:邻苯二酚(儿茶酚)、连苯三酚、没食子酸、没食子酸烷基酯(例如没食子酸甲酯、没食子酸丙酯)、烷基邻苯二酚(例如甲基邻苯二酚、乙基邻苯二酚和叔丁基邻苯二酚)和它们的混合物。该多羟基酚类腐蚀抑制剂化合物优选为邻苯二酚(儿茶酚)、连苯三酚、没食子酸和它们的混合物。该多羟基酚类腐蚀抑制剂化合物进一步优选为邻苯二酚。
当本发明的组合物包含上述多羟基酚类腐蚀抑制剂化合物时,该组合物还包含至少一种多元醇或多元硫醇表面改性抑制剂,其含有邻位羟基或邻位巯基以与所述多羟基酚类化合物腐蚀抑制剂配对,从而起到表面改性防止剂的作用以防止或抑制多羟基酚类化合物结合至被清洗的硅晶片上的硅烷醇。然而,即使不存在多羟基酚类化合物腐蚀抑制剂组分时,所述包含邻位羟基或邻位巯基的至少一种多元醇或多元硫醇表面改性抑制剂也可任选地存在于本发明的组合物中。任何适合的多元醇或多元硫醇表面改性抑制剂可用于本发明的组合物。这样的适合的多元醇或多元硫醇表面改性抑制剂的实例包括,但不限于:链烷二醇、链烷三醇、链烷二硫醇、苯基取代的链烷二醇、苯基取代的链烷三醇、苯基取代的链烷二硫醇和它们的混合物。多元醇或多元硫醇表面改性抑制剂的具体实例包括,但不限于:乙二醇、丙二醇、甘油、丁二醇、戊二醇、己二醇、环己二醇、1,2-乙二硫醇和它们的混合物。该多元醇或多元硫醇表面改性抑制剂优选包括乙二醇、丙二醇、甘油、丁二醇、1,2-乙二硫醇和它们的混合物。若是这样的多元醇或多元硫醇表面改性抑制剂化合物存在于该组合物中,则其在该组合物中的量通常为该组合物的重量的大于0%~约20%,优选约1%~约10%,更优选约3%~约10%以及进一步优选约5%~约10%。
本发明的清洁组合物也可任选地具有存在于该组合物中的至少一种或多种以下组分:
(H)至少一种选自亚砜、砜、酰胺、内酯、醚、醇、叔链烷醇胺和除了那些用作组分(B)的醇醚以外的醇醚的极性有机溶剂/共溶剂;和
(I)至少一种表面活性剂;和
(J)至少一种金属螯合剂或络合剂。
选自亚砜、砜、酰胺、内酯、醚、醇、叔链烷醇胺和那些用作组分(B)的醇醚以外的醇醚的任何适合的其他极性有机溶剂/共溶剂可被任选地用于本发明的组合物,并且当使用时其在该组合物中的量通常为该组合物的重量的大于0%~约50%,优选约5%~约50%,更优选约5%~约25%。这样的适合的其他极性有机溶剂/共溶剂包括,但不限于:二甲亚砜、环丁砜、二甲基砜、二乙基砜、二甲基乙酰胺、甲酰胺、丁内酯、乙二醇二甲醚、乙二醇二乙醚、乙二醇二丁醚、三乙醇胺、N-甲基甲酰胺、N,N-二甲基甲酰胺、苯甲醇、丙醇、丁醇、三乙醇胺、乙二醇和它们的混合物。极性有机溶剂/共溶剂优选为二甲亚砜、环丁砜、二甲基砜、二乙基砜、二甲基乙酰胺、甲酰胺、三乙醇胺和N-甲基甲酰胺。
任何适合的表面活性剂可被任选地用于本发明的组合物。该表面活性剂可以是任何适合的两性、阳离子、阴离子或非离子表面活性剂。用于本发明的组合物的两性表面活性剂包括,但不限于:甜菜碱类和磺基甜菜碱类(sulfobetaines),例如烷基甜菜碱、酰胺基烷基甜菜碱(amidoalkyl betaines)、烷基磺基甜菜碱和酰胺基烷基磺基甜菜碱(amidoalkyl sulfobetaines);氨基羧酸衍生物,例如两性甘氨酸盐、两性丙酸盐、两性二甘氨酸盐和两性二丙酸盐;亚氨基二酸,例如烷氧基烷基亚氨基二酸或烷氧基烷基亚氨基二酸;氧化胺,例如烷基胺氧化物和烷基酰胺基烷基胺氧化物;氟代烷基磺酸盐和氟代烷基两性表面活性剂;和它们的混合物。所述两性表面活性剂优选为椰油酰胺基丙基甜菜碱、椰油酰胺基丙基二甲基甜菜碱、椰油酰胺基丙基羟基磺基甜菜碱、辛酰两性二丙酸盐、椰油酰胺基二丙酸盐、椰油两性丙酸盐、椰油两性羟乙基丙酸盐、异癸氧基丙基亚氨基二丙酸、月桂基亚氨基二丙酸盐、椰油酰胺基丙胺氧化物和椰油胺氧化物以及氟代烷基两性表面活性剂。用于本发明组合物的非离子表面活性剂包括,但不限于:炔二醇、乙氧基化炔二醇、氟代烷基烷氧基化物、氟代烷基酯、氟代聚氧化乙烯链烷醇、多元醇的脂肪酸酯、聚氧化乙烯一烷基醚、聚氧化乙烯二醇、硅氧烷型表面活性剂和亚烷基二醇一烷基醚。所述非离子表面活性剂优选为炔二醇或乙氧基化炔二醇。用于本发明的组合物的阴离子表面活性剂包括,但不限于:羧酸盐、N-酰基肌氨酸盐、磺酸盐、硫酸盐、正磷酸的一酯和二酯,例如磷酸癸酯。所述阴离子表面活性剂优选为不含金属的表面活性剂。用于本发明的组合物的阳离子表面活性剂包括,但不限于:胺乙氧基化物(amine ethoxylates)、二烷基二甲基铵盐、二烷基吗啉盐、烷基苯甲基二甲基铵盐、烷基三甲基铵盐和烷基吡啶盐。所述阳离子表面活性剂优选为不含卤素的表面活性剂。如果使用表面活性剂组分,则其优选为炔二醇表面活性剂。特别适合的表面活性剂的实例包括,但不限于:3,5-二甲基-1-己炔-3-醇(Surfynol-61)、乙氧基化2,4,7,9-四甲基-5-癸炔-4,7-二醇(Surfynol-465)、聚四氟乙烯鲸蜡氧基丙基甜菜碱(polytetrafluoroethylene cetoxypropyl-betaine)(Zonyl FSK)、ZonylFSH、Triton X-100,即辛基苯氧基聚乙氧基乙醇等。在存在这样的表面活性剂组分的情况下,其量通常为该组合物的重量的大于0%~约5%,优选约0.01%~约1%,更优选约0.01%~约0.2%。
在本发明的组合物中可任选地包含任何适合的金属螯合剂或络合剂,并且在存在金属螯合剂或络合剂的情况下,其量通常为该组合物的重量的大于0%~约5%,优选约0.01%~约5%,更优选约0.1%~约1%。这样的适合的金属螯合剂或络合剂包括,但不限于下列的有机酸和它们的异构体及盐:(乙二胺)四乙酸(EDTA)、丁二胺四乙酸、环己-1,2-二胺四乙酸(CyDTA)、二亚乙基三胺五乙酸(DETPA)、乙二胺四丙酸、(羟乙基)乙二胺三乙酸(HEDTA)、N,N,N',N'-乙二胺四(亚甲基膦酸)(EDTMP)、三亚乙基四胺六乙酸(TTHA)、1,3-二氨基-2-羟基丙烷-N,N,N',N'-四乙酸(DHPTA)、甲基亚氨基二乙酸、丙二胺四乙酸、次氮基三乙酸(NTA)、氨基三亚甲基膦酸、柠檬酸、酒石酸、葡萄糖酸、葡糖二酸、甘油酸、草酸、邻苯二甲酸、马来酸、扁桃酸、丙二酸、乳酸、水杨酸、8-羟基喹啉和半胱氨酸。所述金属螯合剂优选为氨基羧酸例如环己-1,2-二胺四乙酸和1,3-二氨基-2-羟基丙烷-N,N,N',N'-四乙酸。
本发明的清洁组合物不仅在以未稀释的(纯的)形式使用时,而且在清洗之后的水冲洗阶段将其用大量的水稀释时均与铜和铝的金属化层(metallizations)相容。例如,在使用95:5的水:清洁混合物的情况下,本发明的组合物具有低的Al和Cu腐蚀速率。此外,本发明的组合物即使是在非常苛刻的高氧/空气暴露的条件下也能表现出良好的铝和铜的相容性。即使使空气鼓泡穿过该清洁组合物也能获得低的腐蚀速率。
可使用本发明的组合物来清洗具有铝或铜的金属化层的微电子衬底,尤其是具有低κ电介质的那些衬底。在足以清洗具有光刻胶、UV/等离子硬化的光刻胶和等离子蚀刻后或蚀刻/灰化后的残留物中的一个或多个的衬底的温度下,使所述清洁组合物与微电子衬底接触一段时间。之后可以用大量的水稀释该组合物以提供在清洗步骤之后的要在衬底上使用的冲洗液。衬底与清洁组合物的接触时间可以为约1分钟~约30分钟,以及可以在约25℃~约85℃的温度进行。
本发明的组合物的优选实施方式的实例包括,但不限于下列组合物。表1中使用了下列缩写:
EGBE=乙二醇丁醚
NMP=N-甲基吡咯烷酮
EG=乙二醇
PG=丙二醇
PEG200=聚乙二醇200
H2O=水
DEA=二乙醇胺
CAR=卡必醇
BZT=苯并三唑
MBZT=甲基苯并三唑
CAT=邻苯二酚
表1:
表中的量均以重量份表示。与具有大于0.08%的唑类组分的类似组合物相比,并且与不含蒸发速率为0.3或更低的至少一种有机醇醚溶剂的类似组合物相比,或与不含与水接触时生成氢氧化物的至少一种仲链烷醇胺的类似组合物相比,或与不含至少一种抑制腐蚀的环状酰胺化合物的类似组合物比较,这些组合物1~6抑制Cu离子/唑类复合物的形成。
实施例1
表2中的数据显示出本发明的组合物的有利的衬底相容性/腐蚀速率。
表2
接下来的实施例显示仲醇与环状酰胺腐蚀抑制剂组分的组合降低Cu(l)/唑类聚合物或使其最小化的属性。
实施例2
60℃时,于100rpm的搅拌速率搅拌的情况下,通过将硅衬底晶片浸渍在由40重量份的二甲亚砜、6重量份的二乙醇胺、60份重量的水和0.5重量份的苯并三唑组成的清洁组合物中20分钟来产生Cu/BZT聚合物,以制造载有不受期望的Cu/BZT聚合物的衬底。将所得到的不受期望的Cu/BZT聚合物衬底切割成大小相等的片。然后,于60℃时在300rpm的搅拌速率的情况下将每一片载有Cu/BZT聚合物的衬底浸渍在不同的溶液中一段指定的时间。对这些经溶液处理的衬底片进行检查和评估以得到Cu/BZT聚合物的去除效率,其中Cu/BZT聚合物负载的标度为0=(表示没有可检测到的Cu/BZT聚合物负载)到10(表示非常严重的Cu/BZT聚合物负载量)。结果参见表3,其中DEA=二乙醇胺,NMP=N-甲基吡咯烷酮以及DMSO=二甲基亚砜。
表3:
尽管参考特定的实施方式本法发明已被揭露如上,但可理解的是,只要不脱离本发明的精神和范围均可作出改变、修改和变化。因此,所作的改变、修改和变化应当落入所附的权利要求的范围内。
Claims (18)
1.一种半水性的、pH≥8的碱性微电子清洁组合物,其包含:
(A)与水接触时生成氢氧化物的至少一种仲链烷醇胺;
(B)当以乙酸正丁酯的蒸发速率为基准速率1.0计,蒸发速率为0.3或更低的至少一种有机醇醚溶剂;
(C)至少一种抑制腐蚀的环状酰胺化合物;
(D)占该组合物重量的0.08%或更少的至少一种平衡pH的唑类金属腐蚀抑制剂;和
(E)水;
以及任选的
(F)至少一种多羟基酚类化合物腐蚀抑制剂;和
(G)至少一种包含邻位羟基或邻位巯基与所述至少一种多羟基酚类化合物腐蚀抑制剂配对的多元醇或多元硫醇表面改性剂,其条件为,如果在所述组合物中存在组分(F),那么也存在组分(G),但是所述组合物可以包含组分(G)而不含组分(F)。
2.根据权利要求1所述的半水性的碱性微电子清洁组合物,其中在所述组合物中同时存在任选组分(F)和(G)。
3.根据权利要求1所述的组合物,其中所述组合物的pH≥9.5。
4.根据权利要求1所述的组合物,其中所述仲链烷醇胺组分(A)在所述组合物中存在的量为约0.1重量%~约50重量%,所述有机醇醚溶剂(B)在所述组合物中存在的量为5重量%~约95重量%,所述环状酰胺腐蚀抑制剂组分(C)在所述组合物中存在的量为约5重量%~约70重量%,所述唑类金属腐蚀抑制剂组分(D)在所述组合物中存在的量为不超过0.07重量%,以及所述水组分(E)在所述组合物中存在的量为5重量%~约75重量%,其中所述重量百分比基于所述组合物的重量。
5.根据权利要求1所述的组合物,其中所述仲链烷醇胺组分(A)选自二乙醇胺、二异丙醇胺、N-乙基乙醇胺、N-甲基乙醇胺及它们的混合物。
6.根据权利要求1所述的组合物,其中所述有机醇醚溶剂组分(B)选自乙二醇丁醚、二乙二醇单甲醚、卡必醇、丁基乙二醇、四乙二醇、二丙二醇甲基醚、乙二醇单甲醚、乙二醇单乙醚、乙二醇单丙醚、二甘醇、二乙二醇单乙醚、二乙二醇单丁醚、丙二醇单甲醚、二丙二醇、二丙二醇单甲醚、乙二醇单异丙醚、乙二醇单苯醚、乙二醇单苄醚、三乙二醇甲基醚、三乙二醇乙基醚、三乙二醇丁基醚和它们的混合物。
7.根据权利要求6所述的组合物,其中所述有机醇醚溶剂组分(B)选自乙二醇丁醚、二乙二醇单甲醚、卡必醇、丁基乙二醇、四乙二醇、二丙二醇甲基醚和它们的混合物。
8.根据权利要求1所述的组合物,其中所述环状酰胺组分(C)选自N-甲基吡咯烷酮、N-乙基吡咯烷酮、二甲基-2-哌啶酮、1-(2-羟乙基)-2-吡咯烷酮、β-内酰胺、γ-内酰胺、δ-内酰胺、ε-内酰胺、4-氨基戊酸内酰胺(γ-戊内酰胺)和它们的混合物。
9.根据权利要求8所述的组合物,其中所述环状酰胺组分(C)选自N-甲基吡咯烷酮、N-乙基吡咯烷酮、二甲基-2-哌啶酮、1-(2-羟乙基)-2-吡咯烷酮和它们的混合物。
10.根据权利要求1所述的组合物,其中所述唑类组分(D)选自苯并三唑、烷基苯并三唑、苯并咪唑、四唑、羟基苯并三唑、羧基苯并三唑、2-巯基苯并三唑、2-巯基苯并咪唑、甲苯基三唑、巯基甲基苯并咪唑、1,2,4-三唑、3-氨基-1,2,4-三唑、1-苯基-1H-四唑-5-硫醇和它们的混合物。
11.根据权利要求10所述的组合物,其中所述唑类组分(D)选自苯并三唑、甲基苯并三唑、苯并咪唑、四唑、羟基苯并三唑、羧基苯并三唑、2-巯基苯并三唑、2-巯基苯并咪唑和它们的混合物。
12.根据权利要求12所述的组合物,其中所述多羟基酚类组分(F)选自邻苯二酚、连苯三酚、没食子酸、没食子酸烷基酯、烷基儿茶酚和它们的混合物,以及所述多元醇或多元硫醇组分(G)选自链烷二醇、链烷三醇、链烷二硫醇、苯基取代的链烷二醇、苯基取代的链烷三醇、苯基取代的链烷二硫醇和它们的混合物。
13.根据权利要求12所述的组合物,其中所述多羟基酚类组分(F)选自邻苯二酚、连苯三酚、没食子酸和它们的混合物,以及所述多元醇或多元硫醇组分(G)选自乙二醇、丙二醇、甘油、丁二醇、环己二醇,1,2-亚乙基二硫醇和它们的混合物。
14.根据权利要求1所述的组合物,其中所述仲链烷醇胺组分(A)选自二乙醇胺、二异丙醇胺、N-乙基乙醇胺、N-甲基乙醇胺及它们的混合物,所述有机醇醚溶剂组分(B)选自乙二醇丁醚、二乙二醇单甲醚、卡必醇、丁基乙二醇、四乙二醇、二丙二醇甲基醚和它们的混合物,所述环状酰胺组分(C)选自N-甲基吡咯烷酮、N-乙基吡咯烷酮、二甲基-2-哌啶酮、1-(2-羟乙基)-2-吡咯烷酮和它们的混合物,所述唑类组分(D)选自苯并三唑、甲基苯并三唑、羧基苯并三唑、苯并咪唑、四唑、羟基苯并三唑、2-巯基苯并三唑、2-巯基苯并咪唑和它们的混合物,以及所述多羟基酚类组分(F)选自邻苯二酚、连苯三酚、没食子酸和它们的混合物,以及所述多元醇或多元硫醇组分(G)选自乙二醇、丙二醇、甘油、丁二醇、1,2-亚乙基二硫醇和它们的混合物。
15.根据权利要求14所述的组合物,其中所述仲链烷醇胺组分(A)为二乙醇胺,所述有机醇醚溶剂组分(B)选自乙二醇丁醚、二乙二醇单甲醚、卡必醇、丁基乙二醇、四乙二醇、二丙二醇甲基醚,所述环状酰胺组分(C)为N-甲基吡咯烷酮,所述唑类组分(D)选自苯并三唑和甲基苯并三唑,以及所述多羟基酚类组分(F)为邻苯二酚,以及所述多元醇或多元硫醇组分(G)选自乙二醇和丙二醇。
16.根据权利要求1~15任一项所述的组合物,其额外包含下列额外的组分中的至少一种:
(H)至少一种选自亚砜、砜、酰胺、内酯、醚、醇、叔链烷醇胺和除了那些用作组分(B)的醇醚以外的醇醚的极性有机溶剂/共溶剂;和
(I)至少一种表面活性剂;和
(J)至少一种金属螯合剂或络合剂。
17.通过从衬底去除光刻胶、UV/等离子硬化的光刻胶、等离子蚀刻后或蚀刻/灰化后残留物中的一种或多种而清洁微电子衬底的方法,其包括使所述微电子衬底与权利要求1~16任一项所述的清洁组合物接触,接触的时间和温度能有效使得该去除发生。
18.根据权利要求17所述的方法,其中所述微电子衬底是硅晶片或玻璃衬底并且所述清洁组合物抑制在清洁过程中的Cu(I)/唑类聚合物的形成或使其最小化。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161626915P | 2011-10-05 | 2011-10-05 | |
US61/626,915 | 2011-10-05 | ||
PCT/US2012/058976 WO2013052809A1 (en) | 2011-10-05 | 2012-10-05 | Microelectronic substrate cleaning compositions having copper/azole polymer inhibition |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103975052A true CN103975052A (zh) | 2014-08-06 |
CN103975052B CN103975052B (zh) | 2016-11-09 |
Family
ID=48044188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280059946.4A Active CN103975052B (zh) | 2011-10-05 | 2012-10-05 | 具有铜/唑类聚合物抑制作用的微电子衬底清洁组合物 |
Country Status (9)
Country | Link |
---|---|
US (1) | US10133180B2 (zh) |
EP (1) | EP2764079A4 (zh) |
JP (1) | JP6033314B2 (zh) |
KR (1) | KR101999641B1 (zh) |
CN (1) | CN103975052B (zh) |
IL (1) | IL231874A0 (zh) |
MY (1) | MY172099A (zh) |
SG (1) | SG11201400840UA (zh) |
WO (1) | WO2013052809A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108235741A (zh) * | 2016-12-28 | 2018-06-29 | 松下知识产权经营株式会社 | 抗蚀剂剥离液 |
TWI629576B (zh) * | 2016-11-29 | 2018-07-11 | 日商松下知識產權經營股份有限公司 | Photoresist stripper |
CN112322401A (zh) * | 2019-08-05 | 2021-02-05 | 切姆-特伦德有限合伙公司 | 用于清洁氨基甲酸酯模具的组合物和方法 |
CN114008181A (zh) * | 2019-06-19 | 2022-02-01 | 弗萨姆材料美国有限责任公司 | 用于半导体衬底的清洁组合物 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9441115B2 (en) * | 2011-11-14 | 2016-09-13 | Tantz Environmental Technologies Ltd. | Aqueous phase pore sealing agent imroving PCB coating oxidation-resistant and corrosion-resistant properties and method for using same |
TWI518467B (zh) * | 2013-11-15 | 2016-01-21 | 達興材料股份有限公司 | 光阻脫除劑和電子元件及其製造方法 |
KR101976885B1 (ko) * | 2014-11-07 | 2019-05-10 | 삼성에스디아이 주식회사 | 유기막 연마 후 세정조성물 및 이를 이용한 세정방법 |
US10233413B2 (en) * | 2015-09-23 | 2019-03-19 | Versum Materials Us, Llc | Cleaning formulations |
CN114502708A (zh) * | 2019-09-30 | 2022-05-13 | 弗萨姆材料美国有限责任公司 | 光致抗蚀剂去除剂 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001036578A1 (en) * | 1999-11-15 | 2001-05-25 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
CN1961065A (zh) * | 2004-03-01 | 2007-05-09 | 马林克罗特贝克公司 | 纳米电子和微电子清洗组合物 |
CN101720352A (zh) * | 2007-05-17 | 2010-06-02 | 高级技术材料公司 | 用于cpm后清除配方的新抗氧化剂 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7135445B2 (en) * | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
EP1138726B1 (en) | 2000-03-27 | 2005-01-12 | Shipley Company LLC | Polymer remover |
US6455479B1 (en) * | 2000-08-03 | 2002-09-24 | Shipley Company, L.L.C. | Stripping composition |
US6558879B1 (en) * | 2000-09-25 | 2003-05-06 | Ashland Inc. | Photoresist stripper/cleaner compositions containing aromatic acid inhibitors |
KR100438015B1 (ko) * | 2001-10-10 | 2004-06-30 | 엘지.필립스 엘시디 주식회사 | 구리용 레지스트 제거용 조성물 |
JP2003129089A (ja) | 2001-10-24 | 2003-05-08 | Daikin Ind Ltd | 洗浄用組成物 |
WO2003064581A1 (en) | 2002-01-28 | 2003-08-07 | Ekc Technology, Inc. | Methods and compositions for chemically treating a substrate using foam technology |
US20040055621A1 (en) | 2002-09-24 | 2004-03-25 | Air Products And Chemicals, Inc. | Processing of semiconductor components with dense processing fluids and ultrasonic energy |
EP1505146A1 (en) | 2003-08-05 | 2005-02-09 | Air Products And Chemicals, Inc. | Processing of substrates with dense fluids comprising acetylenic diols and/or alcohols |
US20050032657A1 (en) | 2003-08-06 | 2005-02-10 | Kane Sean Michael | Stripping and cleaning compositions for microelectronics |
US7384900B2 (en) | 2003-08-27 | 2008-06-10 | Lg Display Co., Ltd. | Composition and method for removing copper-compatible resist |
US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
PL1787168T3 (pl) | 2004-07-15 | 2010-11-30 | Avantor Performance Mat Inc | Zawierające fruktozę, niewodne kompozycje do czyszczenia mikroelektroniki |
US20060094612A1 (en) * | 2004-11-04 | 2006-05-04 | Mayumi Kimura | Post etch cleaning composition for use with substrates having aluminum |
KR20060064441A (ko) | 2004-12-08 | 2006-06-13 | 말린크로트 베이커, 인코포레이티드 | 비수성 비부식성 마이크로전자 세정 조성물 |
ATE463763T1 (de) | 2004-12-10 | 2010-04-15 | Mallinckrodt Baker Inc | Wasserfreie nicht korrosive mikroelektronische reinigungsverbindungen mit polymerischen corrosionsinhibitoren |
EP1701218A3 (en) | 2005-03-11 | 2008-10-15 | Rohm and Haas Electronic Materials LLC | Polymer remover |
WO2006110645A2 (en) | 2005-04-11 | 2006-10-19 | Advanced Technology Materials, Inc. | Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices |
CN101233456B (zh) | 2005-06-07 | 2013-01-02 | 高级技术材料公司 | 金属和电介质相容的牺牲性抗反射涂层清洗及去除组合物 |
JP4741315B2 (ja) | 2005-08-11 | 2011-08-03 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | ポリマー除去組成物 |
WO2007036728A1 (en) | 2005-09-30 | 2007-04-05 | Peratech Limited | Fabric bag including control device |
KR20080059429A (ko) | 2005-10-05 | 2008-06-27 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 게이트 스페이서 산화물 재료를 선택적으로 에칭하기 위한조성물 및 방법 |
EP1932174A4 (en) | 2005-10-05 | 2009-09-23 | Advanced Tech Materials | AQUEOUS OXIDIZING CLEANER FOR REMOVING RESIDUES AFTER A PLASMA ATTACK |
EP1945748A4 (en) | 2005-10-13 | 2009-01-07 | Advanced Tech Materials | PHOTORESIN REMOVAL AND / OR SACRIFICIAL ANTIREFLECTION COATING COMPOSITION COMPATIBLE WITH METALS |
US20090301996A1 (en) | 2005-11-08 | 2009-12-10 | Advanced Technology Materials, Inc. | Formulations for removing cooper-containing post-etch residue from microelectronic devices |
US7960328B2 (en) | 2005-11-09 | 2011-06-14 | Advanced Technology Materials, Inc. | Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon |
US20080139436A1 (en) * | 2006-09-18 | 2008-06-12 | Chris Reid | Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material |
US20080076688A1 (en) | 2006-09-21 | 2008-03-27 | Barnes Jeffrey A | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
WO2008039730A1 (en) | 2006-09-25 | 2008-04-03 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
US20080125342A1 (en) | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
JP5072091B2 (ja) * | 2006-12-08 | 2012-11-14 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5237300B2 (ja) | 2006-12-21 | 2013-07-17 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | エッチング後残留物を除去するための液体洗浄剤 |
SG166102A1 (en) | 2007-03-31 | 2010-11-29 | Advanced Tech Materials | Methods for stripping material for wafer reclamation |
US7933350B2 (en) | 2007-10-30 | 2011-04-26 | Telefonaktiebolaget Lm Ericsson (Publ) | Channel-dependent frequency-domain scheduling in an orthogonal frequency division multiplexing communications system |
KR20090072546A (ko) | 2007-12-28 | 2009-07-02 | 삼성전자주식회사 | 포토레지스트 제거용 조성물 및 이를 이용한 어레이 기판의제조 방법 |
US8110535B2 (en) * | 2009-08-05 | 2012-02-07 | Air Products And Chemicals, Inc. | Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same |
TWI548738B (zh) * | 2010-07-16 | 2016-09-11 | 安堤格里斯公司 | 用於移除蝕刻後殘餘物之水性清潔劑 |
-
2012
- 2012-10-05 EP EP12838061.5A patent/EP2764079A4/en not_active Withdrawn
- 2012-10-05 US US14/348,955 patent/US10133180B2/en active Active
- 2012-10-05 JP JP2014534771A patent/JP6033314B2/ja active Active
- 2012-10-05 CN CN201280059946.4A patent/CN103975052B/zh active Active
- 2012-10-05 MY MYPI2014000926A patent/MY172099A/en unknown
- 2012-10-05 KR KR1020147010619A patent/KR101999641B1/ko active IP Right Grant
- 2012-10-05 SG SG11201400840UA patent/SG11201400840UA/en unknown
- 2012-10-05 WO PCT/US2012/058976 patent/WO2013052809A1/en active Application Filing
-
2014
- 2014-04-02 IL IL231874A patent/IL231874A0/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001036578A1 (en) * | 1999-11-15 | 2001-05-25 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
CN1961065A (zh) * | 2004-03-01 | 2007-05-09 | 马林克罗特贝克公司 | 纳米电子和微电子清洗组合物 |
CN101720352A (zh) * | 2007-05-17 | 2010-06-02 | 高级技术材料公司 | 用于cpm后清除配方的新抗氧化剂 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI629576B (zh) * | 2016-11-29 | 2018-07-11 | 日商松下知識產權經營股份有限公司 | Photoresist stripper |
CN108235741A (zh) * | 2016-12-28 | 2018-06-29 | 松下知识产权经营株式会社 | 抗蚀剂剥离液 |
CN108235741B (zh) * | 2016-12-28 | 2019-05-28 | 松下知识产权经营株式会社 | 抗蚀剂剥离液 |
CN114008181A (zh) * | 2019-06-19 | 2022-02-01 | 弗萨姆材料美国有限责任公司 | 用于半导体衬底的清洁组合物 |
CN112322401A (zh) * | 2019-08-05 | 2021-02-05 | 切姆-特伦德有限合伙公司 | 用于清洁氨基甲酸酯模具的组合物和方法 |
Also Published As
Publication number | Publication date |
---|---|
US10133180B2 (en) | 2018-11-20 |
MY172099A (en) | 2019-11-13 |
KR101999641B1 (ko) | 2019-07-12 |
WO2013052809A1 (en) | 2013-04-11 |
CN103975052B (zh) | 2016-11-09 |
EP2764079A4 (en) | 2015-06-03 |
JP2014534627A (ja) | 2014-12-18 |
SG11201400840UA (en) | 2014-04-28 |
KR20140082713A (ko) | 2014-07-02 |
IL231874A0 (en) | 2014-05-28 |
US20140249065A1 (en) | 2014-09-04 |
JP6033314B2 (ja) | 2016-11-30 |
EP2764079A1 (en) | 2014-08-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103975052A (zh) | 具有铜/唑类聚合物抑制作用的微电子衬底清洁组合物 | |
JP5662365B2 (ja) | クリーニング調合物およびそのクリーニング調合物の使用方法 | |
EP1576072B1 (en) | Aqueous phosphoric acid compositions for cleaning semiconductor devices | |
TWI390032B (zh) | 用於微電子基板之清潔組合物 | |
US20090120457A1 (en) | Compositions and method for removing coatings and preparation of surfaces for use in metal finishing, and manufacturing of electronic and microelectronic devices | |
CN1985217B (zh) | 含果糖的非水性微电子清洁组合物 | |
JP2007243162A (ja) | 洗浄組成物 | |
JP2007514983A (ja) | 非水性、非腐食性マイクロエレクトロニクス洗浄組成物 | |
JP4902898B2 (ja) | 超小型電子基板のための、安定化された非水性洗浄組成物 | |
JP2022536971A (ja) | 半導体基材のための洗浄組成物 | |
KR20110083689A (ko) | 다중-금속 소자 처리를 위한 글루콘산 함유 포토레지스트 세정 조성물 | |
CN102498197A (zh) | 清洗组成物 | |
KR20130019729A (ko) | 평판표시장치용 세정액 조성물 및 평판표시장치의 세정 방법 | |
CN102880017B (zh) | 光刻胶用剥离液组合物及其制备和应用 | |
CN100529014C (zh) | 清洗半导体装置的磷酸组合物水溶液 | |
CN108535971B (zh) | 光致抗蚀剂去除用剥离液组合物 | |
TW201518878A (zh) | 光阻脫除劑和電子元件及其製造方法 | |
CN104932210A (zh) | 光阻剥离组合物和剥离方法,平板、平板显示器及其制法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170427 Address after: American Pennsylvania Patentee after: Anwantuo materials limited liability company Address before: American Pennsylvania Patentee before: Anwantuo Spcial Materials Co., Ltd. |
|
TR01 | Transfer of patent right |