WO2011019189A3 - 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 - Google Patents

레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 Download PDF

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Publication number
WO2011019189A3
WO2011019189A3 PCT/KR2010/005238 KR2010005238W WO2011019189A3 WO 2011019189 A3 WO2011019189 A3 WO 2011019189A3 KR 2010005238 W KR2010005238 W KR 2010005238W WO 2011019189 A3 WO2011019189 A3 WO 2011019189A3
Authority
WO
WIPO (PCT)
Prior art keywords
resist
solution composition
stripping
stripping solution
same
Prior art date
Application number
PCT/KR2010/005238
Other languages
English (en)
French (fr)
Other versions
WO2011019189A2 (ko
Inventor
박면규
김태희
김정현
이승용
김병묵
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to JP2012524640A priority Critical patent/JP5647685B2/ja
Priority to US13/387,087 priority patent/US9081291B2/en
Priority to CN201080034160.8A priority patent/CN102472985B/zh
Publication of WO2011019189A2 publication Critical patent/WO2011019189A2/ko
Publication of WO2011019189A3 publication Critical patent/WO2011019189A3/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

본 발명은 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법에 관한 것이다. 상기 레지스트 박리액 조성물은 레지스트 패턴 및 건식 및 습식 식각 잔사 제거력이 우수하며, 특정의 폴리올 화합물을 함유함으로써 알루미늄 및/또는 구리를 포함하는 금속배선의 부식 방지력이 뛰어나다. 또한, 특정의 아미드 화합물을 함유함으로써 많은 수의 기판을 처리할 수 있어 원가 절감에 크게 기여한다.
PCT/KR2010/005238 2009-08-11 2010-08-10 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 WO2011019189A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012524640A JP5647685B2 (ja) 2009-08-11 2010-08-10 レジスト剥離液組成物及びこれを用いたレジストの剥離方法
US13/387,087 US9081291B2 (en) 2009-08-11 2010-08-10 Resist stripping solution composition, and method for stripping resist by using same
CN201080034160.8A CN102472985B (zh) 2009-08-11 2010-08-10 光阻剥离液组成物及使用其剥离光阻的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0073762 2009-08-11
KR20090073762 2009-08-11

Publications (2)

Publication Number Publication Date
WO2011019189A2 WO2011019189A2 (ko) 2011-02-17
WO2011019189A3 true WO2011019189A3 (ko) 2011-06-23

Family

ID=43586635

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005238 WO2011019189A2 (ko) 2009-08-11 2010-08-10 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법

Country Status (6)

Country Link
US (1) US9081291B2 (ko)
JP (1) JP5647685B2 (ko)
KR (1) KR20110016418A (ko)
CN (1) CN102472985B (ko)
TW (1) TWI519910B (ko)
WO (1) WO2011019189A2 (ko)

Families Citing this family (34)

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JP5238043B2 (ja) * 2009-02-03 2013-07-17 出光興産株式会社 レジスト剥離剤組成物及びそれを用いたレジスト剥離方法
KR100950779B1 (ko) * 2009-08-25 2010-04-02 엘티씨 (주) Ｔｆｔ―ｌｃｄ 통합공정용 포토레지스트 박리제 조성물
KR101879576B1 (ko) * 2011-06-29 2018-07-18 동우 화인켐 주식회사 오프셋 인쇄용 요판 세정액 조성물 및 이를 이용한 세정방법
CN103064263B (zh) * 2011-08-22 2015-06-10 东友精细化工有限公司 抗蚀剂剥离液组合物及利用该组合物的抗蚀剂剥离方法
KR101880303B1 (ko) * 2011-11-04 2018-07-20 동우 화인켐 주식회사 포토레지스트 박리액 조성물
KR101880302B1 (ko) * 2011-10-25 2018-07-20 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트 박리방법
KR20140024625A (ko) * 2012-08-20 2014-03-03 주식회사 동진쎄미켐 포토레지스트 제거용 박리액 조성물
US20140100151A1 (en) * 2012-10-08 2014-04-10 Air Products And Chemicals Inc. Stripping and Cleaning Compositions for Removal of Thick Film Resist
CN102956505B (zh) * 2012-11-19 2015-06-17 深圳市华星光电技术有限公司 开关管的制作方法、阵列基板的制作方法
KR101946379B1 (ko) * 2012-11-20 2019-02-11 주식회사 동진쎄미켐 포토레지스트 박리액 조성물 및 포토레지스트의 박리방법
US9158202B2 (en) * 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
CN103308654B (zh) * 2013-06-13 2016-08-10 深圳市华星光电技术有限公司 用于测试光阻剥离液中水分含量的方法
KR102119438B1 (ko) * 2013-10-30 2020-06-08 삼성디스플레이 주식회사 박리액 및 이를 이용한 표시 장치의 제조방법
US9346737B2 (en) * 2013-12-30 2016-05-24 Eastman Chemical Company Processes for making cyclohexane compounds
KR102092922B1 (ko) * 2014-03-21 2020-04-14 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
KR101586453B1 (ko) * 2014-08-20 2016-01-21 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법
EP3208659A1 (en) * 2014-10-14 2017-08-23 AZ Electronic Materials (Luxembourg) S.à.r.l. Composition for resist patterning and method for forming pattern using same
KR102347618B1 (ko) * 2015-04-02 2022-01-05 동우 화인켐 주식회사 레지스트 박리액 조성물
KR102529951B1 (ko) * 2015-12-14 2023-05-08 삼성디스플레이 주식회사 포토 레지스트 박리제 조성물 및 이를 이용한 박막 트랜지스터 어레이의 제조 방법
KR102422264B1 (ko) * 2016-03-11 2022-07-18 주식회사 이엔에프테크놀로지 신너 조성물
KR102433114B1 (ko) * 2016-05-02 2022-08-17 주식회사 이엔에프테크놀로지 신너 조성물
WO2018058341A1 (en) * 2016-09-28 2018-04-05 Dow Global Technologies Llc Sulfoxide/glycol ether based solvents for use in the electronics industry
KR102465604B1 (ko) * 2016-11-01 2022-11-11 주식회사 이엔에프테크놀로지 신너 조성물
CN106773562A (zh) * 2016-12-23 2017-05-31 昆山艾森半导体材料有限公司 一种去除az光刻胶的去胶液
CN108255027B (zh) * 2016-12-28 2024-04-12 安集微电子（上海）有限公司 一种光刻胶清洗液
JP6899220B2 (ja) * 2017-01-11 2021-07-07 株式会社ダイセル レジスト除去用組成物
JP7122258B2 (ja) 2017-01-17 2022-08-19 株式会社ダイセル 半導体基板洗浄剤
CN108424818A (zh) * 2017-02-14 2018-08-21 东友精细化工有限公司 掩模清洗液组合物
CN108693717A (zh) * 2017-03-29 2018-10-23 东友精细化工有限公司 抗蚀剂剥离液组合物
CN108929808B (zh) * 2017-05-26 2020-11-27 荒川化学工业株式会社 无铅软钎料焊剂用清洗剂组合物、无铅软钎料焊剂的清洗方法
CN107271450A (zh) * 2017-06-20 2017-10-20 深圳市华星光电技术有限公司 一种聚酰胺/氮化硅膜致密性的检测方法
CN110396315B (zh) * 2019-07-22 2020-11-10 深圳市华星光电技术有限公司 改性修复液、制备方法及修复色阻的方法
KR102453332B1 (ko) * 2019-11-20 2022-10-11 닛산 가가쿠 가부시키가이샤 세정제 조성물 및 세정 방법
CN112947015A (zh) * 2021-02-08 2021-06-11 绵阳艾萨斯电子材料有限公司 Pr胶剥离液及其在液晶面板制程再生中的应用

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Also Published As

Publication number Publication date
JP5647685B2 (ja) 2015-01-07
CN102472985A (zh) 2012-05-23
CN102472985B (zh) 2014-01-08
US9081291B2 (en) 2015-07-14
WO2011019189A2 (ko) 2011-02-17
KR20110016418A (ko) 2011-02-17
TW201113652A (en) 2011-04-16
JP2013501958A (ja) 2013-01-17
TWI519910B (zh) 2016-02-01
US20120181248A1 (en) 2012-07-19

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