TW200745384A - Cleaning agent for copper wiring - Google Patents

Cleaning agent for copper wiring

Info

Publication number
TW200745384A
TW200745384A TW096111386A TW96111386A TW200745384A TW 200745384 A TW200745384 A TW 200745384A TW 096111386 A TW096111386 A TW 096111386A TW 96111386 A TW96111386 A TW 96111386A TW 200745384 A TW200745384 A TW 200745384A
Authority
TW
Taiwan
Prior art keywords
copper wiring
cleaning agent
copper
semiconductor device
semiconductor substrate
Prior art date
Application number
TW096111386A
Other languages
Chinese (zh)
Inventor
Yasuhito Yagi
Original Assignee
Sanyo Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Chemical Ind Ltd filed Critical Sanyo Chemical Ind Ltd
Publication of TW200745384A publication Critical patent/TW200745384A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • C23G1/103—Other heavy metals copper or alloys of copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/24—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Disclosed is a cleaning agent for copper wiring which is excellent in an effect of inhibiting corrosion of copper wiring (copper corrosion inhibiting effect), while having no affect on the contact resistance. Specifically disclosed is a cleaning agent for copper wiring, which is characterized by containing a copper corrosion inhibitor (RE) and water (W), having a pH at 25 DEG C of 3-14, and satisfying the following formula (1). 0.49 ≤ {E + (0.059xpH)}≤ 0.93 (1) In the formula, E represents the oxidation-reduction potential (V, vsSHE) at 25 DEG C, and pH represents the pH at 25 DEG C. Also disclosed is a method for cleaning a semiconductor substrate or a semiconductor device, which is characterized in that a semiconductor substrate or semiconductor device having a copper wiring is cleaned by continuously or intermittently supplying the cleaning agent for copper wiring to the semiconductor substrate or semiconductor device.
TW096111386A 2006-03-31 2007-03-30 Cleaning agent for copper wiring TW200745384A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006100743 2006-03-31

Publications (1)

Publication Number Publication Date
TW200745384A true TW200745384A (en) 2007-12-16

Family

ID=38655177

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096111386A TW200745384A (en) 2006-03-31 2007-03-30 Cleaning agent for copper wiring

Country Status (2)

Country Link
TW (1) TW200745384A (en)
WO (1) WO2007125634A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI503878B (en) * 2008-11-07 2015-10-11 Uwiz Technology Co Ltd Acidic post-cmp cleaning composition
WO2023040308A1 (en) 2021-09-14 2023-03-23 浙江奥首材料科技有限公司 Copper surface passivation composition, use thereof, and photoresist stripping solution containing same

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101848987A (en) * 2007-09-14 2010-09-29 三洋化成工业株式会社 Cleaning agent for electronic material
JP5813280B2 (en) * 2008-03-19 2015-11-17 富士フイルム株式会社 Semiconductor device cleaning liquid and cleaning method
CN102925908B (en) * 2012-11-26 2014-04-30 华阳新兴科技（天津）集团有限公司 Water-based normal-temperature rustproof spray cleaning agent and preparation method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6723691B2 (en) * 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
JP2002069495A (en) * 2000-06-16 2002-03-08 Kao Corp Detergent composition
JP3787085B2 (en) * 2001-12-04 2006-06-21 関東化学株式会社 Composition for removing photoresist residue
JP2003313594A (en) * 2002-04-22 2003-11-06 Nec Corp Detergent solution and method for producing semiconductor device
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI503878B (en) * 2008-11-07 2015-10-11 Uwiz Technology Co Ltd Acidic post-cmp cleaning composition
WO2023040308A1 (en) 2021-09-14 2023-03-23 浙江奥首材料科技有限公司 Copper surface passivation composition, use thereof, and photoresist stripping solution containing same

Also Published As

Publication number Publication date
WO2007125634A1 (en) 2007-11-08

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