JP2005183686A5 - - Google Patents

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Publication number
JP2005183686A5
JP2005183686A5 JP2003422762A JP2003422762A JP2005183686A5 JP 2005183686 A5 JP2005183686 A5 JP 2005183686A5 JP 2003422762 A JP2003422762 A JP 2003422762A JP 2003422762 A JP2003422762 A JP 2003422762A JP 2005183686 A5 JP2005183686 A5 JP 2005183686A5
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JP
Japan
Prior art keywords
region
soi layer
disposed
element isolation
insulating films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003422762A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005183686A (ja
Filing date
Publication date
Priority claimed from JP2003422762A external-priority patent/JP2005183686A/ja
Priority to JP2003422762A priority Critical patent/JP2005183686A/ja
Application filed filed Critical
Priority to US11/002,142 priority patent/US7173319B2/en
Priority to TW093138569A priority patent/TW200525734A/zh
Priority to DE102004060170A priority patent/DE102004060170A1/de
Priority to KR1020040105991A priority patent/KR20050062390A/ko
Priority to CNA2004100821457A priority patent/CN1649160A/zh
Publication of JP2005183686A publication Critical patent/JP2005183686A/ja
Priority to US11/500,340 priority patent/US7352049B2/en
Priority to US11/617,936 priority patent/US7453135B2/en
Publication of JP2005183686A5 publication Critical patent/JP2005183686A5/ja
Priority to US11/873,907 priority patent/US20080042237A1/en
Pending legal-status Critical Current

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JP2003422762A 2003-12-19 2003-12-19 半導体装置およびその製造方法 Pending JP2005183686A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2003422762A JP2005183686A (ja) 2003-12-19 2003-12-19 半導体装置およびその製造方法
US11/002,142 US7173319B2 (en) 2003-12-19 2004-12-03 Semiconductor device and method of manufacturing the same
TW093138569A TW200525734A (en) 2003-12-19 2004-12-13 Semiconductor device and method of manufacturing the same
DE102004060170A DE102004060170A1 (de) 2003-12-19 2004-12-14 Halbleitervorrichtung und Verfahren zu ihrer Herstellung
KR1020040105991A KR20050062390A (ko) 2003-12-19 2004-12-15 반도체장치 및 그 제조방법
CNA2004100821457A CN1649160A (zh) 2003-12-19 2004-12-17 半导体装置及其制造方法
US11/500,340 US7352049B2 (en) 2003-12-19 2006-08-08 Semiconductor device and method of manufacturing the same
US11/617,936 US7453135B2 (en) 2003-12-19 2006-12-29 Semiconductor device and method of manufacturing the same
US11/873,907 US20080042237A1 (en) 2003-12-19 2007-10-17 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003422762A JP2005183686A (ja) 2003-12-19 2003-12-19 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2005183686A JP2005183686A (ja) 2005-07-07
JP2005183686A5 true JP2005183686A5 (enExample) 2007-02-08

Family

ID=34675327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003422762A Pending JP2005183686A (ja) 2003-12-19 2003-12-19 半導体装置およびその製造方法

Country Status (6)

Country Link
US (4) US7173319B2 (enExample)
JP (1) JP2005183686A (enExample)
KR (1) KR20050062390A (enExample)
CN (1) CN1649160A (enExample)
DE (1) DE102004060170A1 (enExample)
TW (1) TW200525734A (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183686A (ja) * 2003-12-19 2005-07-07 Renesas Technology Corp 半導体装置およびその製造方法
JP4479006B2 (ja) 2005-07-28 2010-06-09 セイコーエプソン株式会社 半導体装置の製造方法
US7790527B2 (en) * 2006-02-03 2010-09-07 International Business Machines Corporation High-voltage silicon-on-insulator transistors and methods of manufacturing the same
JP2007242660A (ja) * 2006-03-06 2007-09-20 Renesas Technology Corp 半導体装置
US20070232019A1 (en) * 2006-03-30 2007-10-04 Hynix Semiconductor Inc. Method for forming isolation structure in nonvolatile memory device
CN100514585C (zh) * 2006-04-12 2009-07-15 财团法人工业技术研究院 具有电感的晶片级构装结构及其构装方法
US8089130B2 (en) * 2006-06-20 2012-01-03 Agere Systems Inc. Semiconductor device and process for reducing damaging breakdown in gate dielectrics
KR100819558B1 (ko) * 2006-09-04 2008-04-07 삼성전자주식회사 반도체 저항소자들 및 그의 형성방법들
JP5137378B2 (ja) * 2006-10-20 2013-02-06 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP4614981B2 (ja) * 2007-03-22 2011-01-19 Ｊｓｒ株式会社 化学機械研磨用水系分散体および半導体装置の化学機械研磨方法
JP4458129B2 (ja) * 2007-08-09 2010-04-28 ソニー株式会社 半導体装置およびその製造方法
US7679139B2 (en) * 2007-09-11 2010-03-16 Honeywell International Inc. Non-planar silicon-on-insulator device that includes an “area-efficient” body tie
JP5446388B2 (ja) * 2009-03-31 2014-03-19 サンケン電気株式会社 集積化半導体装置の製造方法
CN101859782B (zh) * 2010-04-30 2012-05-30 北京大学 抗总剂量辐照的soi器件及其制造方法
CN101859783B (zh) * 2010-04-30 2012-05-30 北京大学 一种抗总剂量辐照的soi器件及其制造方法
US8492868B2 (en) * 2010-08-02 2013-07-23 International Business Machines Corporation Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer
JP5616823B2 (ja) * 2011-03-08 2014-10-29 セイコーインスツル株式会社 半導体装置およびその製造方法
US8765607B2 (en) 2011-06-01 2014-07-01 Freescale Semiconductor, Inc. Active tiling placement for improved latch-up immunity
KR101896412B1 (ko) * 2011-08-01 2018-09-07 페어차일드코리아반도체 주식회사 폴리 실리콘 저항, 이를 포함하는 기준 전압 회로, 및 폴리 실리콘 저항 제조 방법
JP2012186491A (ja) * 2012-05-07 2012-09-27 Renesas Electronics Corp 半導体装置及びその製造方法
FR3012666A1 (enExample) 2013-10-31 2015-05-01 St Microelectronics Crolles 2
FR3012667A1 (enExample) 2013-10-31 2015-05-01 St Microelectronics Crolles 2
FR3012665A1 (enExample) * 2013-10-31 2015-05-01 St Microelectronics Crolles 2
US9929135B2 (en) 2016-03-07 2018-03-27 Micron Technology, Inc. Apparatuses and methods for semiconductor circuit layout
DE102018112866B4 (de) * 2018-05-29 2020-07-02 Infineon Technologies Ag Halbleitervorrichtung mit elektrischem Widerstand

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09289324A (ja) 1996-04-23 1997-11-04 Matsushita Electric Works Ltd 半導体装置の製造方法
JP3161418B2 (ja) 1998-07-06 2001-04-25 日本電気株式会社 電界効果トランジスタの製造方法
JP4540146B2 (ja) * 1998-12-24 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2001230315A (ja) * 2000-02-17 2001-08-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100543393B1 (ko) * 2000-03-09 2006-01-20 후지쯔 가부시끼가이샤 반도체 장치 및 그 제조 방법
US6358820B1 (en) * 2000-04-17 2002-03-19 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device
JP4776752B2 (ja) * 2000-04-19 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置
JP4969715B2 (ja) * 2000-06-06 2012-07-04 ルネサスエレクトロニクス株式会社 半導体装置
JP4776755B2 (ja) * 2000-06-08 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2002110908A (ja) 2000-09-28 2002-04-12 Toshiba Corp スパイラルインダクタおよびこれを備える半導体集積回路装置の製造方法
US6635550B2 (en) * 2000-12-20 2003-10-21 Texas Instruments Incorporated Semiconductor on insulator device architecture and method of construction
JP4803898B2 (ja) * 2001-05-17 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置
JP3939112B2 (ja) * 2001-08-03 2007-07-04 松下電器産業株式会社 半導体集積回路
JP2003158198A (ja) * 2001-09-07 2003-05-30 Seiko Instruments Inc 相補型ｍｏｓ半導体装置
US6833602B1 (en) * 2002-09-06 2004-12-21 Lattice Semiconductor Corporation Device having electrically isolated low voltage and high voltage regions and process for fabricating the device
JP2005183686A (ja) * 2003-12-19 2005-07-07 Renesas Technology Corp 半導体装置およびその製造方法

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