FR3012667A1 - - Google Patents

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Publication number
FR3012667A1
FR3012667A1 FR1360676A FR1360676A FR3012667A1 FR 3012667 A1 FR3012667 A1 FR 3012667A1 FR 1360676 A FR1360676 A FR 1360676A FR 1360676 A FR1360676 A FR 1360676A FR 3012667 A1 FR3012667 A1 FR 3012667A1
Authority
FR
France
Prior art keywords
trenches
semiconductor layer
transistor
layer
isolation trenches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR1360676A
Other languages
English (en)
French (fr)
Inventor
Denis Rideau
Elise Baylac
Emmanuel Josse
Pierre Morin
Olivier Nier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA, STMicroelectronics Crolles 2 SAS, STMicroelectronics lnc USA filed Critical STMicroelectronics SA
Priority to FR1360676A priority Critical patent/FR3012667A1/fr
Priority to US14/526,081 priority patent/US9543214B2/en
Publication of FR3012667A1 publication Critical patent/FR3012667A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/795—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in lateral device isolation regions, e.g. STI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/796—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions having memorised stress for introducing strain in the channel regions, e.g. recrystallised polysilicon gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/011—Manufacture or treatment comprising FinFETs
    • H10P14/3411—
    • H10P14/6544—
    • H10P30/20—
    • H10P30/40—
    • H10P50/692—
    • H10P95/00—
    • H10W10/014—
    • H10W10/0148—
    • H10W10/17—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10P30/204—
    • H10P30/208—
    • H10P95/90—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Element Separation (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
FR1360676A 2013-10-31 2013-10-31 Withdrawn FR3012667A1 (enExample)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1360676A FR3012667A1 (enExample) 2013-10-31 2013-10-31
US14/526,081 US9543214B2 (en) 2013-10-31 2014-10-28 Method of forming stressed semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1360676A FR3012667A1 (enExample) 2013-10-31 2013-10-31

Publications (1)

Publication Number Publication Date
FR3012667A1 true FR3012667A1 (enExample) 2015-05-01

Family

ID=50069110

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1360676A Withdrawn FR3012667A1 (enExample) 2013-10-31 2013-10-31

Country Status (2)

Country Link
US (1) US9543214B2 (enExample)
FR (1) FR3012667A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324618B1 (en) * 2015-06-01 2016-04-26 Globalfoundries Inc. Methods of forming replacement fins for a FinFET device
US9536990B2 (en) 2015-06-01 2017-01-03 Globalfoundries Inc. Methods of forming replacement fins for a FinFET device using a targeted thickness for the patterned fin etch mask
FR3098645A1 (fr) * 2019-07-11 2021-01-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de formation de tranchées
US12424482B2 (en) * 2022-12-12 2025-09-23 Applied Materials, Inc. Selective implantation into STI of ETSOI device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080150037A1 (en) * 2006-12-24 2008-06-26 Chartered Semiconductor Manufacturing, Ltd Selective STI Stress Relaxation Through Ion Implantation
US20120108032A1 (en) * 2010-10-29 2012-05-03 Institute of Microelectronics, Chinese Academy of Sciences Method for forming a semiconductor device with stressed trench isolation
US20120302038A1 (en) * 2011-05-23 2012-11-29 Shanghai Huali Microelectronics Corporation Method for preparing a shallow trench isolation structure with the stress of its isolation oxide being tuned by ion implantation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0152345B1 (ko) 1995-06-14 1998-10-01 김광호 혼성 쇼트키 주입 전계 효과 트랜지스터
US5902128A (en) 1996-10-17 1999-05-11 Micron Technology, Inc. Process to improve the flow of oxide during field oxidation by fluorine doping
JP2005183686A (ja) 2003-12-19 2005-07-07 Renesas Technology Corp 半導体装置およびその製造方法
US7704818B2 (en) 2007-09-04 2010-04-27 Dongbu Hitek Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US7700416B1 (en) 2008-04-25 2010-04-20 Acorn Technologies, Inc. Tensile strained semiconductor on insulator using elastic edge relaxation and a sacrificial stressor layer
US8395213B2 (en) 2010-08-27 2013-03-12 Acorn Technologies, Inc. Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer
FR3009647A1 (enExample) * 2013-08-06 2015-02-13 St Microelectronics Sa
FR3009646A1 (enExample) * 2013-08-06 2015-02-13 St Microelectronics Sa
FR3012665A1 (enExample) * 2013-10-31 2015-05-01 St Microelectronics Crolles 2
FR3012666A1 (enExample) * 2013-10-31 2015-05-01 St Microelectronics Crolles 2

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080150037A1 (en) * 2006-12-24 2008-06-26 Chartered Semiconductor Manufacturing, Ltd Selective STI Stress Relaxation Through Ion Implantation
US20120108032A1 (en) * 2010-10-29 2012-05-03 Institute of Microelectronics, Chinese Academy of Sciences Method for forming a semiconductor device with stressed trench isolation
US20120302038A1 (en) * 2011-05-23 2012-11-29 Shanghai Huali Microelectronics Corporation Method for preparing a shallow trench isolation structure with the stress of its isolation oxide being tuned by ion implantation

Also Published As

Publication number Publication date
US9543214B2 (en) 2017-01-10
US20150118805A1 (en) 2015-04-30

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Effective date: 20150630