JP2005183686A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2005183686A
JP2005183686A JP2003422762A JP2003422762A JP2005183686A JP 2005183686 A JP2005183686 A JP 2005183686A JP 2003422762 A JP2003422762 A JP 2003422762A JP 2003422762 A JP2003422762 A JP 2003422762A JP 2005183686 A JP2005183686 A JP 2005183686A
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JP
Japan
Prior art keywords
region
soi layer
disposed
isolation insulating
soi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003422762A
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English (en)
Japanese (ja)
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JP2005183686A5 (enExample
Inventor
Toshiaki Iwamatsu
俊明 岩松
Takashi Ipposhi
隆志 一法師
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2003422762A priority Critical patent/JP2005183686A/ja
Priority to US11/002,142 priority patent/US7173319B2/en
Priority to TW093138569A priority patent/TW200525734A/zh
Priority to DE102004060170A priority patent/DE102004060170A1/de
Priority to KR1020040105991A priority patent/KR20050062390A/ko
Priority to CNA2004100821457A priority patent/CN1649160A/zh
Publication of JP2005183686A publication Critical patent/JP2005183686A/ja
Priority to US11/500,340 priority patent/US7352049B2/en
Priority to US11/617,936 priority patent/US7453135B2/en
Publication of JP2005183686A5 publication Critical patent/JP2005183686A5/ja
Priority to US11/873,907 priority patent/US20080042237A1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
JP2003422762A 2003-12-19 2003-12-19 半導体装置およびその製造方法 Pending JP2005183686A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2003422762A JP2005183686A (ja) 2003-12-19 2003-12-19 半導体装置およびその製造方法
US11/002,142 US7173319B2 (en) 2003-12-19 2004-12-03 Semiconductor device and method of manufacturing the same
TW093138569A TW200525734A (en) 2003-12-19 2004-12-13 Semiconductor device and method of manufacturing the same
DE102004060170A DE102004060170A1 (de) 2003-12-19 2004-12-14 Halbleitervorrichtung und Verfahren zu ihrer Herstellung
KR1020040105991A KR20050062390A (ko) 2003-12-19 2004-12-15 반도체장치 및 그 제조방법
CNA2004100821457A CN1649160A (zh) 2003-12-19 2004-12-17 半导体装置及其制造方法
US11/500,340 US7352049B2 (en) 2003-12-19 2006-08-08 Semiconductor device and method of manufacturing the same
US11/617,936 US7453135B2 (en) 2003-12-19 2006-12-29 Semiconductor device and method of manufacturing the same
US11/873,907 US20080042237A1 (en) 2003-12-19 2007-10-17 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003422762A JP2005183686A (ja) 2003-12-19 2003-12-19 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2005183686A true JP2005183686A (ja) 2005-07-07
JP2005183686A5 JP2005183686A5 (enExample) 2007-02-08

Family

ID=34675327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003422762A Pending JP2005183686A (ja) 2003-12-19 2003-12-19 半導体装置およびその製造方法

Country Status (6)

Country Link
US (4) US7173319B2 (enExample)
JP (1) JP2005183686A (enExample)
KR (1) KR20050062390A (enExample)
CN (1) CN1649160A (enExample)
DE (1) DE102004060170A1 (enExample)
TW (1) TW200525734A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7524734B2 (en) 2005-07-28 2009-04-28 Seiko Epson Corporation Wiring substrate, electro-optic device, electric apparatus, method of manufacturing wiring substrate, method of manufacturing electro-optic device, and method of manufacturing electric apparatus
JP2010239044A (ja) * 2009-03-31 2010-10-21 Sanken Electric Co Ltd 集積化半導体装置及びその製造方法
JP2012186491A (ja) * 2012-05-07 2012-09-27 Renesas Electronics Corp 半導体装置及びその製造方法

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183686A (ja) * 2003-12-19 2005-07-07 Renesas Technology Corp 半導体装置およびその製造方法
US7790527B2 (en) * 2006-02-03 2010-09-07 International Business Machines Corporation High-voltage silicon-on-insulator transistors and methods of manufacturing the same
JP2007242660A (ja) * 2006-03-06 2007-09-20 Renesas Technology Corp 半導体装置
US20070232019A1 (en) * 2006-03-30 2007-10-04 Hynix Semiconductor Inc. Method for forming isolation structure in nonvolatile memory device
CN100514585C (zh) * 2006-04-12 2009-07-15 财团法人工业技术研究院 具有电感的晶片级构装结构及其构装方法
US8089130B2 (en) * 2006-06-20 2012-01-03 Agere Systems Inc. Semiconductor device and process for reducing damaging breakdown in gate dielectrics
KR100819558B1 (ko) * 2006-09-04 2008-04-07 삼성전자주식회사 반도체 저항소자들 및 그의 형성방법들
JP5137378B2 (ja) * 2006-10-20 2013-02-06 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP4614981B2 (ja) * 2007-03-22 2011-01-19 Ｊｓｒ株式会社 化学機械研磨用水系分散体および半導体装置の化学機械研磨方法
JP4458129B2 (ja) * 2007-08-09 2010-04-28 ソニー株式会社 半導体装置およびその製造方法
US7679139B2 (en) * 2007-09-11 2010-03-16 Honeywell International Inc. Non-planar silicon-on-insulator device that includes an “area-efficient” body tie
CN101859782B (zh) * 2010-04-30 2012-05-30 北京大学 抗总剂量辐照的soi器件及其制造方法
CN101859783B (zh) * 2010-04-30 2012-05-30 北京大学 一种抗总剂量辐照的soi器件及其制造方法
US8492868B2 (en) * 2010-08-02 2013-07-23 International Business Machines Corporation Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer
JP5616823B2 (ja) * 2011-03-08 2014-10-29 セイコーインスツル株式会社 半導体装置およびその製造方法
US8765607B2 (en) 2011-06-01 2014-07-01 Freescale Semiconductor, Inc. Active tiling placement for improved latch-up immunity
KR101896412B1 (ko) * 2011-08-01 2018-09-07 페어차일드코리아반도체 주식회사 폴리 실리콘 저항, 이를 포함하는 기준 전압 회로, 및 폴리 실리콘 저항 제조 방법
FR3012666A1 (enExample) 2013-10-31 2015-05-01 St Microelectronics Crolles 2
FR3012667A1 (enExample) 2013-10-31 2015-05-01 St Microelectronics Crolles 2
FR3012665A1 (enExample) * 2013-10-31 2015-05-01 St Microelectronics Crolles 2
US9929135B2 (en) 2016-03-07 2018-03-27 Micron Technology, Inc. Apparatuses and methods for semiconductor circuit layout
DE102018112866B4 (de) * 2018-05-29 2020-07-02 Infineon Technologies Ag Halbleitervorrichtung mit elektrischem Widerstand

Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2001308273A (ja) * 2000-04-19 2001-11-02 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2002343873A (ja) * 2001-05-17 2002-11-29 Mitsubishi Electric Corp 半導体装置
JP2003051543A (ja) * 2001-08-03 2003-02-21 Matsushita Electric Ind Co Ltd 半導体集積回路
JP2003158198A (ja) * 2001-09-07 2003-05-30 Seiko Instruments Inc 相補型ｍｏｓ半導体装置

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JPH09289324A (ja) 1996-04-23 1997-11-04 Matsushita Electric Works Ltd 半導体装置の製造方法
JP3161418B2 (ja) 1998-07-06 2001-04-25 日本電気株式会社 電界効果トランジスタの製造方法
JP4540146B2 (ja) * 1998-12-24 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2001230315A (ja) * 2000-02-17 2001-08-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100543393B1 (ko) * 2000-03-09 2006-01-20 후지쯔 가부시끼가이샤 반도체 장치 및 그 제조 방법
US6358820B1 (en) * 2000-04-17 2002-03-19 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device
JP4969715B2 (ja) * 2000-06-06 2012-07-04 ルネサスエレクトロニクス株式会社 半導体装置
JP4776755B2 (ja) * 2000-06-08 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2002110908A (ja) 2000-09-28 2002-04-12 Toshiba Corp スパイラルインダクタおよびこれを備える半導体集積回路装置の製造方法
US6635550B2 (en) * 2000-12-20 2003-10-21 Texas Instruments Incorporated Semiconductor on insulator device architecture and method of construction
US6833602B1 (en) * 2002-09-06 2004-12-21 Lattice Semiconductor Corporation Device having electrically isolated low voltage and high voltage regions and process for fabricating the device
JP2005183686A (ja) * 2003-12-19 2005-07-07 Renesas Technology Corp 半導体装置およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308273A (ja) * 2000-04-19 2001-11-02 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2002343873A (ja) * 2001-05-17 2002-11-29 Mitsubishi Electric Corp 半導体装置
JP2003051543A (ja) * 2001-08-03 2003-02-21 Matsushita Electric Ind Co Ltd 半導体集積回路
JP2003158198A (ja) * 2001-09-07 2003-05-30 Seiko Instruments Inc 相補型ｍｏｓ半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7524734B2 (en) 2005-07-28 2009-04-28 Seiko Epson Corporation Wiring substrate, electro-optic device, electric apparatus, method of manufacturing wiring substrate, method of manufacturing electro-optic device, and method of manufacturing electric apparatus
JP2010239044A (ja) * 2009-03-31 2010-10-21 Sanken Electric Co Ltd 集積化半導体装置及びその製造方法
JP2012186491A (ja) * 2012-05-07 2012-09-27 Renesas Electronics Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
CN1649160A (zh) 2005-08-03
KR20050062390A (ko) 2005-06-23
US20050133864A1 (en) 2005-06-23
TW200525734A (en) 2005-08-01
US7453135B2 (en) 2008-11-18
US20070105329A1 (en) 2007-05-10
US20060270126A1 (en) 2006-11-30
US7173319B2 (en) 2007-02-06
US20080042237A1 (en) 2008-02-21
DE102004060170A1 (de) 2005-07-28
US7352049B2 (en) 2008-04-01

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