CN1649160A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN1649160A
CN1649160A CNA2004100821457A CN200410082145A CN1649160A CN 1649160 A CN1649160 A CN 1649160A CN A2004100821457 A CNA2004100821457 A CN A2004100821457A CN 200410082145 A CN200410082145 A CN 200410082145A CN 1649160 A CN1649160 A CN 1649160A
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CN
China
Prior art keywords
soi layer
region
mentioned
semiconductor device
soi
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Pending
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CNA2004100821457A
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English (en)
Chinese (zh)
Inventor
岩松俊明
一法师隆志
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Renesas Technology Corp
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Renesas Technology Corp
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Publication of CN1649160A publication Critical patent/CN1649160A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
CNA2004100821457A 2003-12-19 2004-12-17 半导体装置及其制造方法 Pending CN1649160A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003422762A JP2005183686A (ja) 2003-12-19 2003-12-19 半導体装置およびその製造方法
JP422762/2003 2003-12-19

Publications (1)

Publication Number Publication Date
CN1649160A true CN1649160A (zh) 2005-08-03

Family

ID=34675327

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2004100821457A Pending CN1649160A (zh) 2003-12-19 2004-12-17 半导体装置及其制造方法

Country Status (6)

Country Link
US (4) US7173319B2 (enExample)
JP (1) JP2005183686A (enExample)
KR (1) KR20050062390A (enExample)
CN (1) CN1649160A (enExample)
DE (1) DE102004060170A1 (enExample)
TW (1) TW200525734A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100514585C (zh) * 2006-04-12 2009-07-15 财团法人工业技术研究院 具有电感的晶片级构装结构及其构装方法
CN101859783A (zh) * 2010-04-30 2010-10-13 北京大学 一种抗总剂量辐照的soi器件及其制造方法
CN101859782A (zh) * 2010-04-30 2010-10-13 北京大学 抗总剂量辐照的soi器件,及其制造方法

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183686A (ja) * 2003-12-19 2005-07-07 Renesas Technology Corp 半導体装置およびその製造方法
JP4479006B2 (ja) 2005-07-28 2010-06-09 セイコーエプソン株式会社 半導体装置の製造方法
US7790527B2 (en) * 2006-02-03 2010-09-07 International Business Machines Corporation High-voltage silicon-on-insulator transistors and methods of manufacturing the same
JP2007242660A (ja) * 2006-03-06 2007-09-20 Renesas Technology Corp 半導体装置
US20070232019A1 (en) * 2006-03-30 2007-10-04 Hynix Semiconductor Inc. Method for forming isolation structure in nonvolatile memory device
US8089130B2 (en) * 2006-06-20 2012-01-03 Agere Systems Inc. Semiconductor device and process for reducing damaging breakdown in gate dielectrics
KR100819558B1 (ko) * 2006-09-04 2008-04-07 삼성전자주식회사 반도체 저항소자들 및 그의 형성방법들
JP5137378B2 (ja) * 2006-10-20 2013-02-06 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP4614981B2 (ja) * 2007-03-22 2011-01-19 Ｊｓｒ株式会社 化学機械研磨用水系分散体および半導体装置の化学機械研磨方法
JP4458129B2 (ja) * 2007-08-09 2010-04-28 ソニー株式会社 半導体装置およびその製造方法
US7679139B2 (en) * 2007-09-11 2010-03-16 Honeywell International Inc. Non-planar silicon-on-insulator device that includes an “area-efficient” body tie
JP5446388B2 (ja) * 2009-03-31 2014-03-19 サンケン電気株式会社 集積化半導体装置の製造方法
US8492868B2 (en) * 2010-08-02 2013-07-23 International Business Machines Corporation Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer
JP5616823B2 (ja) * 2011-03-08 2014-10-29 セイコーインスツル株式会社 半導体装置およびその製造方法
US8765607B2 (en) 2011-06-01 2014-07-01 Freescale Semiconductor, Inc. Active tiling placement for improved latch-up immunity
KR101896412B1 (ko) * 2011-08-01 2018-09-07 페어차일드코리아반도체 주식회사 폴리 실리콘 저항, 이를 포함하는 기준 전압 회로, 및 폴리 실리콘 저항 제조 방법
JP2012186491A (ja) * 2012-05-07 2012-09-27 Renesas Electronics Corp 半導体装置及びその製造方法
FR3012666A1 (enExample) 2013-10-31 2015-05-01 St Microelectronics Crolles 2
FR3012667A1 (enExample) 2013-10-31 2015-05-01 St Microelectronics Crolles 2
FR3012665A1 (enExample) * 2013-10-31 2015-05-01 St Microelectronics Crolles 2
US9929135B2 (en) 2016-03-07 2018-03-27 Micron Technology, Inc. Apparatuses and methods for semiconductor circuit layout
DE102018112866B4 (de) * 2018-05-29 2020-07-02 Infineon Technologies Ag Halbleitervorrichtung mit elektrischem Widerstand

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09289324A (ja) 1996-04-23 1997-11-04 Matsushita Electric Works Ltd 半導体装置の製造方法
JP3161418B2 (ja) 1998-07-06 2001-04-25 日本電気株式会社 電界効果トランジスタの製造方法
JP4540146B2 (ja) * 1998-12-24 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2001230315A (ja) * 2000-02-17 2001-08-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100543393B1 (ko) * 2000-03-09 2006-01-20 후지쯔 가부시끼가이샤 반도체 장치 및 그 제조 방법
US6358820B1 (en) * 2000-04-17 2002-03-19 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device
JP4776752B2 (ja) * 2000-04-19 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置
JP4969715B2 (ja) * 2000-06-06 2012-07-04 ルネサスエレクトロニクス株式会社 半導体装置
JP4776755B2 (ja) * 2000-06-08 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2002110908A (ja) 2000-09-28 2002-04-12 Toshiba Corp スパイラルインダクタおよびこれを備える半導体集積回路装置の製造方法
US6635550B2 (en) * 2000-12-20 2003-10-21 Texas Instruments Incorporated Semiconductor on insulator device architecture and method of construction
JP4803898B2 (ja) * 2001-05-17 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置
JP3939112B2 (ja) * 2001-08-03 2007-07-04 松下電器産業株式会社 半導体集積回路
JP2003158198A (ja) * 2001-09-07 2003-05-30 Seiko Instruments Inc 相補型ｍｏｓ半導体装置
US6833602B1 (en) * 2002-09-06 2004-12-21 Lattice Semiconductor Corporation Device having electrically isolated low voltage and high voltage regions and process for fabricating the device
JP2005183686A (ja) * 2003-12-19 2005-07-07 Renesas Technology Corp 半導体装置およびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100514585C (zh) * 2006-04-12 2009-07-15 财团法人工业技术研究院 具有电感的晶片级构装结构及其构装方法
CN101859783A (zh) * 2010-04-30 2010-10-13 北京大学 一种抗总剂量辐照的soi器件及其制造方法
CN101859782A (zh) * 2010-04-30 2010-10-13 北京大学 抗总剂量辐照的soi器件,及其制造方法
CN101859782B (zh) * 2010-04-30 2012-05-30 北京大学 抗总剂量辐照的soi器件及其制造方法
CN101859783B (zh) * 2010-04-30 2012-05-30 北京大学 一种抗总剂量辐照的soi器件及其制造方法

Also Published As

Publication number Publication date
KR20050062390A (ko) 2005-06-23
US20050133864A1 (en) 2005-06-23
TW200525734A (en) 2005-08-01
US7453135B2 (en) 2008-11-18
US20070105329A1 (en) 2007-05-10
US20060270126A1 (en) 2006-11-30
US7173319B2 (en) 2007-02-06
JP2005183686A (ja) 2005-07-07
US20080042237A1 (en) 2008-02-21
DE102004060170A1 (de) 2005-07-28
US7352049B2 (en) 2008-04-01

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