TW200525734A - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the same Download PDFInfo
- Publication number
- TW200525734A TW200525734A TW093138569A TW93138569A TW200525734A TW 200525734 A TW200525734 A TW 200525734A TW 093138569 A TW093138569 A TW 093138569A TW 93138569 A TW93138569 A TW 93138569A TW 200525734 A TW200525734 A TW 200525734A
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- layer
- semiconductor device
- isolation insulating
- insulating films
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 238000002955 isolation Methods 0.000 claims abstract description 149
- 239000000758 substrate Substances 0.000 claims description 65
- 239000012535 impurity Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 31
- 239000013589 supplement Substances 0.000 claims description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 238000009413 insulation Methods 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 2
- 238000003491 array Methods 0.000 claims 1
- 230000008676 import Effects 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 153
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 229910052814 silicon oxide Inorganic materials 0.000 description 26
- 229910021332 silicide Inorganic materials 0.000 description 25
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 23
- 230000003071 parasitic effect Effects 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 238000007667 floating Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 101710183548 Pyridoxal 5'-phosphate synthase subunit PdxS Proteins 0.000 description 4
- 102100035459 Pyruvate dehydrogenase protein X component, mitochondrial Human genes 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- -1 titanium (T i) Chemical compound 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 101100519293 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) pdx-1 gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- CLVOYFRAZKMSPF-UHFFFAOYSA-N n,n-dibutyl-4-chlorobenzenesulfonamide Chemical compound CCCCN(CCCC)S(=O)(=O)C1=CC=C(Cl)C=C1 CLVOYFRAZKMSPF-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/20—Inductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/47—Resistors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003422762A JP2005183686A (ja) | 2003-12-19 | 2003-12-19 | 半導体装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200525734A true TW200525734A (en) | 2005-08-01 |
Family
ID=34675327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093138569A TW200525734A (en) | 2003-12-19 | 2004-12-13 | Semiconductor device and method of manufacturing the same |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US7173319B2 (enExample) |
| JP (1) | JP2005183686A (enExample) |
| KR (1) | KR20050062390A (enExample) |
| CN (1) | CN1649160A (enExample) |
| DE (1) | DE102004060170A1 (enExample) |
| TW (1) | TW200525734A (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005183686A (ja) * | 2003-12-19 | 2005-07-07 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| JP4479006B2 (ja) | 2005-07-28 | 2010-06-09 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| US7790527B2 (en) * | 2006-02-03 | 2010-09-07 | International Business Machines Corporation | High-voltage silicon-on-insulator transistors and methods of manufacturing the same |
| JP2007242660A (ja) * | 2006-03-06 | 2007-09-20 | Renesas Technology Corp | 半導体装置 |
| US20070232019A1 (en) * | 2006-03-30 | 2007-10-04 | Hynix Semiconductor Inc. | Method for forming isolation structure in nonvolatile memory device |
| CN100514585C (zh) * | 2006-04-12 | 2009-07-15 | 财团法人工业技术研究院 | 具有电感的晶片级构装结构及其构装方法 |
| US8089130B2 (en) * | 2006-06-20 | 2012-01-03 | Agere Systems Inc. | Semiconductor device and process for reducing damaging breakdown in gate dielectrics |
| KR100819558B1 (ko) * | 2006-09-04 | 2008-04-07 | 삼성전자주식회사 | 반도체 저항소자들 및 그의 형성방법들 |
| JP5137378B2 (ja) * | 2006-10-20 | 2013-02-06 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| JP4614981B2 (ja) * | 2007-03-22 | 2011-01-19 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体および半導体装置の化学機械研磨方法 |
| JP4458129B2 (ja) * | 2007-08-09 | 2010-04-28 | ソニー株式会社 | 半導体装置およびその製造方法 |
| US7679139B2 (en) * | 2007-09-11 | 2010-03-16 | Honeywell International Inc. | Non-planar silicon-on-insulator device that includes an “area-efficient” body tie |
| JP5446388B2 (ja) * | 2009-03-31 | 2014-03-19 | サンケン電気株式会社 | 集積化半導体装置の製造方法 |
| CN101859782B (zh) * | 2010-04-30 | 2012-05-30 | 北京大学 | 抗总剂量辐照的soi器件及其制造方法 |
| CN101859783B (zh) * | 2010-04-30 | 2012-05-30 | 北京大学 | 一种抗总剂量辐照的soi器件及其制造方法 |
| US8492868B2 (en) * | 2010-08-02 | 2013-07-23 | International Business Machines Corporation | Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer |
| JP5616823B2 (ja) * | 2011-03-08 | 2014-10-29 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
| US8765607B2 (en) | 2011-06-01 | 2014-07-01 | Freescale Semiconductor, Inc. | Active tiling placement for improved latch-up immunity |
| KR101896412B1 (ko) * | 2011-08-01 | 2018-09-07 | 페어차일드코리아반도체 주식회사 | 폴리 실리콘 저항, 이를 포함하는 기준 전압 회로, 및 폴리 실리콘 저항 제조 방법 |
| JP2012186491A (ja) * | 2012-05-07 | 2012-09-27 | Renesas Electronics Corp | 半導体装置及びその製造方法 |
| FR3012666A1 (enExample) | 2013-10-31 | 2015-05-01 | St Microelectronics Crolles 2 | |
| FR3012667A1 (enExample) | 2013-10-31 | 2015-05-01 | St Microelectronics Crolles 2 | |
| FR3012665A1 (enExample) * | 2013-10-31 | 2015-05-01 | St Microelectronics Crolles 2 | |
| US9929135B2 (en) | 2016-03-07 | 2018-03-27 | Micron Technology, Inc. | Apparatuses and methods for semiconductor circuit layout |
| DE102018112866B4 (de) * | 2018-05-29 | 2020-07-02 | Infineon Technologies Ag | Halbleitervorrichtung mit elektrischem Widerstand |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09289324A (ja) | 1996-04-23 | 1997-11-04 | Matsushita Electric Works Ltd | 半導体装置の製造方法 |
| JP3161418B2 (ja) | 1998-07-06 | 2001-04-25 | 日本電気株式会社 | 電界効果トランジスタの製造方法 |
| JP4540146B2 (ja) * | 1998-12-24 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2001230315A (ja) * | 2000-02-17 | 2001-08-24 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| KR100543393B1 (ko) * | 2000-03-09 | 2006-01-20 | 후지쯔 가부시끼가이샤 | 반도체 장치 및 그 제조 방법 |
| US6358820B1 (en) * | 2000-04-17 | 2002-03-19 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device |
| JP4776752B2 (ja) * | 2000-04-19 | 2011-09-21 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP4969715B2 (ja) * | 2000-06-06 | 2012-07-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP4776755B2 (ja) * | 2000-06-08 | 2011-09-21 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP2002110908A (ja) | 2000-09-28 | 2002-04-12 | Toshiba Corp | スパイラルインダクタおよびこれを備える半導体集積回路装置の製造方法 |
| US6635550B2 (en) * | 2000-12-20 | 2003-10-21 | Texas Instruments Incorporated | Semiconductor on insulator device architecture and method of construction |
| JP4803898B2 (ja) * | 2001-05-17 | 2011-10-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP3939112B2 (ja) * | 2001-08-03 | 2007-07-04 | 松下電器産業株式会社 | 半導体集積回路 |
| JP2003158198A (ja) * | 2001-09-07 | 2003-05-30 | Seiko Instruments Inc | 相補型ｍｏｓ半導体装置 |
| US6833602B1 (en) * | 2002-09-06 | 2004-12-21 | Lattice Semiconductor Corporation | Device having electrically isolated low voltage and high voltage regions and process for fabricating the device |
| JP2005183686A (ja) * | 2003-12-19 | 2005-07-07 | Renesas Technology Corp | 半導体装置およびその製造方法 |
-
2003
- 2003-12-19 JP JP2003422762A patent/JP2005183686A/ja active Pending
-
2004
- 2004-12-03 US US11/002,142 patent/US7173319B2/en not_active Expired - Fee Related
- 2004-12-13 TW TW093138569A patent/TW200525734A/zh unknown
- 2004-12-14 DE DE102004060170A patent/DE102004060170A1/de not_active Withdrawn
- 2004-12-15 KR KR1020040105991A patent/KR20050062390A/ko not_active Withdrawn
- 2004-12-17 CN CNA2004100821457A patent/CN1649160A/zh active Pending
-
2006
- 2006-08-08 US US11/500,340 patent/US7352049B2/en not_active Expired - Fee Related
- 2006-12-29 US US11/617,936 patent/US7453135B2/en not_active Expired - Fee Related
-
2007
- 2007-10-17 US US11/873,907 patent/US20080042237A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN1649160A (zh) | 2005-08-03 |
| KR20050062390A (ko) | 2005-06-23 |
| US20050133864A1 (en) | 2005-06-23 |
| US7453135B2 (en) | 2008-11-18 |
| US20070105329A1 (en) | 2007-05-10 |
| US20060270126A1 (en) | 2006-11-30 |
| US7173319B2 (en) | 2007-02-06 |
| JP2005183686A (ja) | 2005-07-07 |
| US20080042237A1 (en) | 2008-02-21 |
| DE102004060170A1 (de) | 2005-07-28 |
| US7352049B2 (en) | 2008-04-01 |
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