JP2007294915A5 - - Google Patents
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- Publication number
- JP2007294915A5 JP2007294915A5 JP2007076018A JP2007076018A JP2007294915A5 JP 2007294915 A5 JP2007294915 A5 JP 2007294915A5 JP 2007076018 A JP2007076018 A JP 2007076018A JP 2007076018 A JP2007076018 A JP 2007076018A JP 2007294915 A5 JP2007294915 A5 JP 2007294915A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- insulating film
- gate electrode
- floating gate
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 41
- 150000002291 germanium compounds Chemical class 0.000 claims 12
- 239000012535 impurity Substances 0.000 claims 12
- 229910052732 germanium Inorganic materials 0.000 claims 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 11
- 230000015572 biosynthetic process Effects 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 8
- 150000004767 nitrides Chemical class 0.000 claims 8
- 238000005530 etching Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 239000000463 material Substances 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 150000003377 silicon compounds Chemical class 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007076018A JP5132171B2 (ja) | 2006-03-31 | 2007-03-23 | 不揮発性半導体記憶装置及びその作製方法並びに半導体装置及びその作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006101254 | 2006-03-31 | ||
| JP2006101254 | 2006-03-31 | ||
| JP2007076018A JP5132171B2 (ja) | 2006-03-31 | 2007-03-23 | 不揮発性半導体記憶装置及びその作製方法並びに半導体装置及びその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012223251A Division JP5604492B2 (ja) | 2006-03-31 | 2012-10-05 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007294915A JP2007294915A (ja) | 2007-11-08 |
| JP2007294915A5 true JP2007294915A5 (enExample) | 2010-04-30 |
| JP5132171B2 JP5132171B2 (ja) | 2013-01-30 |
Family
ID=38765167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007076018A Expired - Fee Related JP5132171B2 (ja) | 2006-03-31 | 2007-03-23 | 不揮発性半導体記憶装置及びその作製方法並びに半導体装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5132171B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8441009B2 (en) * | 2009-12-25 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2015043388A (ja) * | 2013-08-26 | 2015-03-05 | 国立大学法人 琉球大学 | 半導体装置、半導体装置の製造方法、電子機器 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3980178B2 (ja) * | 1997-08-29 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 不揮発性メモリおよび半導体装置 |
| JP2001326289A (ja) * | 2000-03-08 | 2001-11-22 | Semiconductor Energy Lab Co Ltd | 不揮発性メモリおよび半導体装置 |
| US7378286B2 (en) * | 2004-08-20 | 2008-05-27 | Sharp Laboratories Of America, Inc. | Semiconductive metal oxide thin film ferroelectric memory transistor |
-
2007
- 2007-03-23 JP JP2007076018A patent/JP5132171B2/ja not_active Expired - Fee Related
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